The Experts below are selected from a list of 2073 Experts worldwide ranked by ideXlab platform
Eiji Shamoto - One of the best experts on this subject based on the ideXlab platform.
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fundamental investigation of ultra precision Ductile Machining of tungsten carbide by applying elliptical vibration cutting with single crystal diamond
Journal of Materials Processing Technology, 2014Co-Authors: Yilong Wang, Norikazu Suzuki, Jianguo Zhang, Eiji ShamotoAbstract:Abstract This paper presents essential investigations on the feasibility of Ductile mode Machining of sintered tungsten carbide assisted by ultrasonic elliptical vibration cutting technology. It lays out the foundations toward efficient application of elliptical vibration cutting technology on tungsten carbide. Tungsten carbide is a crucial material for glass molding in the optics manufacturing industry. Its grain size and binder material have significant influence not only on the mechanical and chemical properties but also on the Machining performance of tungsten carbide. In order to investigate the influence of material composition on tungsten carbide Machining, a series of grooving and planing experiments were conducted utilizing single crystal diamond tools. The experimental results indicated that as compared to ordinary cutting where finished surface deteriorates seriously, Ductile mode Machining can be attained successfully by applying the elliptical vibration cutting technique. It was also clarified that the binder material, the grain size, cutting/vibration conditions as well as crystal orientation of the diamond tool have significant influence on the tool life and the machined surface quality. Based on these fundamental results, feasibility of micro/nano-scale fabrication on tungsten carbide is investigated. By applying amplitude control sculpturing method, where depth of cut is arbitrary changed by controlling the vibration amplitude while Machining, ultra-precision textured grooves and a dimple pattern were successfully sculptured on tungsten carbide in Ductile mode.
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Influence of material composition on Ductile Machining of tungsten carbide in elliptical vibration cutting
Emerging Technology in Precision Engineering Xiv, 2012Co-Authors: Jianguo Zhang, Rei Hino, Norikazu Suzuki, Takashi Kato, Eiji ShamotoAbstract:Tungsten carbide is a crucial material for glass molding in optical industry. The present study investigated a feasibility of Ductile Machining of sintered tungsten carbide for glass molding by applying ultrasonic elliptical vibration cutting techriology with single crystal diamond tool. Grain size and binder material of sintered tungsten carbide have an influence on hardness and/or toughness of the material. Binder material also has a chemical affinity to diamond. In order to examine the influence of material composition on Ductile Machining of tungsten carbide, a series of grooving and planing experiments were conducted to several different tungsten carbide workpieces with the different binder phase and the different grain size. The experimental results indicated that micro grooving in a Ductile mode can be attained successfully by applying ultrasonic elliptical vibration cutting, while finished surface deteriorates with brittle fractures in ordinary cutting. It was also clarified that grain size and binder material have significant influence on the deteriorations in the surface quality, the tool shape and the cutting forces.
Luo Xichun - One of the best experts on this subject based on the ideXlab platform.
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In situ investigation of nanometric cutting of 3C-SiC using scanning electron microscope
'Springer Science and Business Media LLC', 2021Co-Authors: Tian Dongyu, Liu Lei, Xu Zongwei, Hartmaier Alexander, Zhang Junjie, Zhou Zhanqi, Zhao Xuesen, Liu Bing, Le Song, Luo XichunAbstract:Experimentally revealing the nanometric deformation behavior of 3C-SiC is challenging due to its ultra-small feature size for brittle-to-Ductile transition. In the present work, we elucidated the nanometric cutting mechanisms of 3C-SiC by performing in situ nanometric cutting experiments under scanning electron microscope (SEM), as well as post-characterization by electron back-scattered diffraction (EBSD) and transmission electron microscopy (TEM). In particular, a new method based on the combination of image processing technology and SEM online observation was proposed to achieve in situ measurement of cutting force with an uncertainty less than 1 mN. Furthermore, the cutting cross-section was characterized by atomic force microscope (AFM) to access the specific cutting energy. The results revealed that the specific cutting energy increase non-linearly with the decrease of cutting depth due to the size effect of cutting tool in nanometric cutting. The high-pressure phase transformation (HPPT) may play the major role in 3C-SiC Ductile Machining under the parameters of this experiment
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Study on the vertical ultrasonic vibration-assisted nanoMachining process on single-crystal silicon
'ASME International', 2021Co-Authors: Wang Jiqiang, Luo Xichun, Geng Yanquan, Li Zihan, Yan Yongda, Fan PengfeiAbstract:Subsurface damage that is caused by mechanical Machining is a major impediment to the widespread use of hard–brittle materials. Ultrasonic vibration-assisted macro- or microMachining could facilitate shallow subsurface damage compared with conventional Machining. However, the subsurface damage that was induced by ultrasonic vibration-assisted nanoMachining on hard–brittle silicon crystal has not yet been thoroughly investigated. In this study, we used a tip-based ultrasonic vibration-assisted nanoscratch approach to machine nanochannels on single-crystal silicon, to investigate the subsurface damage mechanism of the hard–brittle material during Ductile-Machining. The material removal state, morphology, and dimensions of the nanochannel, and the effect of subsurface damage on the scratch outcomes were studied. The materials were expelled in rubbing, plowing, and cutting mode in sequence with an increasing applied normal load and the silicon was significantly harder than the pristine material after plastic deformation. Transmission electron microscope analysis of the subsurface demonstrated that ultrasonic vibration-assisted nanoscratching led to larger subsurface damage compared with static scratching. The transmission electron microscopy results agreed with the Raman spectroscopy and molecular dynamic simulation. Our findings are important for instructing ultrasonic vibration-assisted Machining of hard–brittle materials at the nanoscale level
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Nanocutting mechanism of 6H-SiC investigated by scanning electron microscope online observation and stress-assisted and ion implant-assisted approaches
'Springer Science and Business Media LLC', 2020Co-Authors: Xu Zongwei, Liu Lei, Tian Dongyu, Hartmaier Alexander, Luo Xichun, Zhang Junjie, Nordlund Kai, Rommel Mathias, He Zhongdu, Zhang GuoxiongAbstract:Nanocutting mechanism of single crystal 6H-SiC is investigated through a novel scanning electron microscope setup in this paper. Various undeformed chip thicknesses on (0001) orientation are adopted in the nanocutting experiments. Phase transformation and dislocation activities involved in the 6H-SiC nanocutting process are also characterized and analyzed. Two methods of stress-assisted and ion implant-assisted nanocutting are studied to improve 6H-SiC Ductile Machining ability. Results show that stress-assisted method can effectively decrease the hydrostatic stress and help to activate dislocation motion and Ductile Machining; ion implant-induced damages are helpful to improve the Ductile Machining ability from MD simulation and continuous nanocutting experiments under the online observation platform.Non Peer reviewe
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MD simulation of stress-assisted nanometric cutting mechanism of 3C silicon carbide
'Emerald', 2019Co-Authors: Liu Lei, Xu Zongwei, Tian Dongyu, Hartmaier Alexander, Luo Xichun, Zhang Junjie, Nordlund Kai, Fang FengzhouAbstract:Purpose This paper aims to reveal the mechanism for improving Ductile machinability of 3C-silicon carbide (SiC) and associated cutting mechanism in stress-assisted nanometric cutting. Design/methodology/approach Molecular dynamics simulation of nano-cutting 3C-SiC is carried out in this paper. The following two scenarios are considered: normal nanometric cutting of 3C-SiC; and stress-assisted nanometric cutting of 3C-SiC for comparison. Chip formation, phase transformation, dislocation activities and shear strain during nanometric cutting are analyzed. Findings Negative rake angle can produce necessary hydrostatic stress to achieve Ductile removal by the extrusion in Ductile regime Machining. In Ductile-brittle transition, deformation mechanism of 3C-SiC is combination of plastic deformation dominated by dislocation activities and localization of shear deformation. When cutting depth is greater than 10 nm, material removal is mainly achieved by shear. Stress-assisted Machining can lead to better quality of machined surface. However, there is a threshold for the applied stress to fully gain advantages offered by stress-assisted Machining. Stress-assisted Machining further enhances plastic deformation ability through the active dislocations' movements. Originality/value This work describes a stress-assisted Machining method for improving the surface quality, which could improve 3C-SiC Ductile Machining ability.Peer reviewe
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MD simulation of stress-assisted nanometric cutting mechanism of 3C silicon carbide
'Emerald', 2019Co-Authors: Liu Lei, Xu Zongwei, Hartmaier Alexander, Luo Xichun, Zhang Junjie, Nordlund Kai, Rommel MathiasAbstract:Purpose: This paper aims to reveal the mechanism for improving Ductile machinability of 3C-silicon carbide (SiC) and associated cutting mechanism in stress-assisted nanometric cutting. Design/methodology/approach: Molecular dynamics simulation of nano-cutting 3C-SiC is carried out in this paper. The following two scenarios are considered: normal nanometric cutting of 3C-SiC; and stress-assisted nanometric cutting of 3C-SiC for comparison. Chip formation, phase transformation, dislocation activities and shear strain during nanometric cutting are analyzed. Findings: Negative rake angle can produce necessary hydrostatic stress to achieve Ductile removal by the extrusion in Ductile regime Machining. In Ductile-brittle transition, deformation mechanism of 3C-SiC is combination of plastic deformation dominated by dislocation activities and localization of shear deformation. When cutting depth is greater than 10 nm, material removal is mainly achieved by shear. Stress-assisted Machining can lead to better quality of machined surface. However, there is a threshold for the applied stress to fully gain advantages offered by stress-assisted Machining. Stress-assisted Machining further enhances plastic deformation ability through the active dislocations’ movements. Originality/value: This work describes a stress-assisted Machining method for improving the surface quality, which could improve 3C-SiC Ductile Machining ability
Liu Lei - One of the best experts on this subject based on the ideXlab platform.
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In situ investigation of nanometric cutting of 3C-SiC using scanning electron microscope
'Springer Science and Business Media LLC', 2021Co-Authors: Tian Dongyu, Liu Lei, Xu Zongwei, Hartmaier Alexander, Zhang Junjie, Zhou Zhanqi, Zhao Xuesen, Liu Bing, Le Song, Luo XichunAbstract:Experimentally revealing the nanometric deformation behavior of 3C-SiC is challenging due to its ultra-small feature size for brittle-to-Ductile transition. In the present work, we elucidated the nanometric cutting mechanisms of 3C-SiC by performing in situ nanometric cutting experiments under scanning electron microscope (SEM), as well as post-characterization by electron back-scattered diffraction (EBSD) and transmission electron microscopy (TEM). In particular, a new method based on the combination of image processing technology and SEM online observation was proposed to achieve in situ measurement of cutting force with an uncertainty less than 1 mN. Furthermore, the cutting cross-section was characterized by atomic force microscope (AFM) to access the specific cutting energy. The results revealed that the specific cutting energy increase non-linearly with the decrease of cutting depth due to the size effect of cutting tool in nanometric cutting. The high-pressure phase transformation (HPPT) may play the major role in 3C-SiC Ductile Machining under the parameters of this experiment
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Nanocutting mechanism of 6H-SiC investigated by scanning electron microscope online observation and stress-assisted and ion implant-assisted approaches
'Springer Science and Business Media LLC', 2020Co-Authors: Xu Zongwei, Liu Lei, Tian Dongyu, Hartmaier Alexander, Luo Xichun, Zhang Junjie, Nordlund Kai, Rommel Mathias, He Zhongdu, Zhang GuoxiongAbstract:Nanocutting mechanism of single crystal 6H-SiC is investigated through a novel scanning electron microscope setup in this paper. Various undeformed chip thicknesses on (0001) orientation are adopted in the nanocutting experiments. Phase transformation and dislocation activities involved in the 6H-SiC nanocutting process are also characterized and analyzed. Two methods of stress-assisted and ion implant-assisted nanocutting are studied to improve 6H-SiC Ductile Machining ability. Results show that stress-assisted method can effectively decrease the hydrostatic stress and help to activate dislocation motion and Ductile Machining; ion implant-induced damages are helpful to improve the Ductile Machining ability from MD simulation and continuous nanocutting experiments under the online observation platform.Non Peer reviewe
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MD simulation of stress-assisted nanometric cutting mechanism of 3C silicon carbide
'Emerald', 2019Co-Authors: Liu Lei, Xu Zongwei, Tian Dongyu, Hartmaier Alexander, Luo Xichun, Zhang Junjie, Nordlund Kai, Fang FengzhouAbstract:Purpose This paper aims to reveal the mechanism for improving Ductile machinability of 3C-silicon carbide (SiC) and associated cutting mechanism in stress-assisted nanometric cutting. Design/methodology/approach Molecular dynamics simulation of nano-cutting 3C-SiC is carried out in this paper. The following two scenarios are considered: normal nanometric cutting of 3C-SiC; and stress-assisted nanometric cutting of 3C-SiC for comparison. Chip formation, phase transformation, dislocation activities and shear strain during nanometric cutting are analyzed. Findings Negative rake angle can produce necessary hydrostatic stress to achieve Ductile removal by the extrusion in Ductile regime Machining. In Ductile-brittle transition, deformation mechanism of 3C-SiC is combination of plastic deformation dominated by dislocation activities and localization of shear deformation. When cutting depth is greater than 10 nm, material removal is mainly achieved by shear. Stress-assisted Machining can lead to better quality of machined surface. However, there is a threshold for the applied stress to fully gain advantages offered by stress-assisted Machining. Stress-assisted Machining further enhances plastic deformation ability through the active dislocations' movements. Originality/value This work describes a stress-assisted Machining method for improving the surface quality, which could improve 3C-SiC Ductile Machining ability.Peer reviewe
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MD simulation of stress-assisted nanometric cutting mechanism of 3C silicon carbide
'Emerald', 2019Co-Authors: Liu Lei, Xu Zongwei, Hartmaier Alexander, Luo Xichun, Zhang Junjie, Nordlund Kai, Rommel MathiasAbstract:Purpose: This paper aims to reveal the mechanism for improving Ductile machinability of 3C-silicon carbide (SiC) and associated cutting mechanism in stress-assisted nanometric cutting. Design/methodology/approach: Molecular dynamics simulation of nano-cutting 3C-SiC is carried out in this paper. The following two scenarios are considered: normal nanometric cutting of 3C-SiC; and stress-assisted nanometric cutting of 3C-SiC for comparison. Chip formation, phase transformation, dislocation activities and shear strain during nanometric cutting are analyzed. Findings: Negative rake angle can produce necessary hydrostatic stress to achieve Ductile removal by the extrusion in Ductile regime Machining. In Ductile-brittle transition, deformation mechanism of 3C-SiC is combination of plastic deformation dominated by dislocation activities and localization of shear deformation. When cutting depth is greater than 10 nm, material removal is mainly achieved by shear. Stress-assisted Machining can lead to better quality of machined surface. However, there is a threshold for the applied stress to fully gain advantages offered by stress-assisted Machining. Stress-assisted Machining further enhances plastic deformation ability through the active dislocations’ movements. Originality/value: This work describes a stress-assisted Machining method for improving the surface quality, which could improve 3C-SiC Ductile Machining ability
Jiwang Yan - One of the best experts on this subject based on the ideXlab platform.
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Effects of tool edge radius on Ductile Machining of silicon: an investigation by FEM
Semiconductor Science and Technology, 2009Co-Authors: Jiwang Yan, Hongwei Zhao, Tsunemoto KuriyagawaAbstract:The submicron-level orthogonal cutting process of silicon has been investigated by the finite element approach, and the effects of tool edge radius on cutting force, cutting stress, temperature and chip formation were investigated. The results indicate that increasing the tool edge radius causes a significant increase in thrust force and a decrease in chip thickness. A hydrostatic pressure (~15 GPa) is generated in the cutting region, which is sufficiently high to cause phase transformations in silicon. The volume of the material under high pressure increases with the edge radius. Temperature rise occurs intensively near the tool–chip interface while the highest cutting temperature (~300 °C) is far lower than the necessary temperature for activating dislocations in silicon. As the edge radius is beyond a critical value (~200 nm), the primary high-temperature zone shifts from the rake face side to the flank face side, causing a transition in the tool wear pattern from crater wear to flank wear. The simulation results from the present study could successfully explain existing experimental phenomena, and are helpful for optimizing tool geometry design in silicon Machining.
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Recent Nano-Precision Ductile Machining Technology for Advanced Optical Applications
Frontiers in Optics, 2006Co-Authors: Jiwang Yan, Tsunemoto KuriyagawaAbstract:Recent research and development work in the Ductile Machining technology for semiconductors and crystalline materials is reviewed. The latest applications of Ductile Machining to the fabrication of infrared optical elements and semiconductor substrates are introduced.
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Laser micro-Raman spectroscopy of single-point diamond machined silicon substrates
Journal of Applied Physics, 2004Co-Authors: Jiwang YanAbstract:Laser micro-Raman spectroscopy was used to examine the silicon substrates machined by single-point diamond turning at Machining scales ranging from 10 to 1000 nm under plane strain conditions. The results showed that the subsurface layer was partially transformed to amorphous, the extent of amorphization depending strongly on the undeformed chip thickness. The intensities of the crystalline phase and the amorphous phase show opposite tendencies with respect to the undeformed chip thickness. In brittle regime Machining, Raman spectra differ depending on the test locations. The intensity of the amorphous phase reaches maximum near the Ductile–brittle transition boundary. In Ductile regime Machining, the intensity of the amorphous phase decreased sharply as the undeformed chip thickness decreased. This work provides technological insights into the possibility of direct manufacturing of subsurface damage-free optical and optoelectronic products of silicon by Ductile Machining without the need for or with a de...
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Some observations on the wear of diamond tools in ultra-precision cutting of single-crystal silicon
Wear, 2003Co-Authors: Katsuo Syoji, Jiwang Yan, Jun'ichi TamakiAbstract:Abstract Single-crystal silicon is not only a dominant substrate material for the fabrication of micro-electro and micro-mechanical components but also an important infrared optical material. Since silicon is a nominally brittle material, currently it is finished by grinding, lapping and chemo-mechanical polishing (CMP). However, silicon can be deformed plastically in Machining, yielding Ductile chips under the influence of high hydrostatic pressure. Therefore, an alternate approach would be to machine silicon with a single point tool in the Ductile mode without the need for subsequent polishing. This way damage due to brittle fracture can be minimized and the productivity of complex-shaped components can be significantly improved. This technology involves the use of an extremely rigid, ultra-precision machine tool and a single-crystal diamond tool with a high negative rake angle. However, one of the problems existing in the industrial application of the Ductile Machining technology is the wear of diamond tools. Tool wear not only raises the Machining cost but also degrades the product quality. The tool wear problem becomes particularly serious when Machining large radius components. This paper deals with the performance of diamond cutting tools during single point diamond turning of single-crystal silicon substrates at a Machining scale smaller than 1 μm. The cutting edge, the finished surface and the cutting chips were examined by scanning electron microscope (SEM) and the micro-cutting forces were measured. It was found that the tool wear could be generally classified into two types: micro-chippings and gradual wear, the predominant wear mechanism depending on undeformed chip thickness. In Ductile mode cutting, flank wear was predominant and the flank wear land was characterized by trailing micro-grooves and step structures. The tool wear causes micro-fracturing on machined surface, yields discontinuous chips and raises cutting forces and force ratio. Experimental results also indicate that it is possible to prolong the Ductile cutting distance by using an appropriate coolant.
Xu Zongwei - One of the best experts on this subject based on the ideXlab platform.
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In situ investigation of nanometric cutting of 3C-SiC using scanning electron microscope
'Springer Science and Business Media LLC', 2021Co-Authors: Tian Dongyu, Liu Lei, Xu Zongwei, Hartmaier Alexander, Zhang Junjie, Zhou Zhanqi, Zhao Xuesen, Liu Bing, Le Song, Luo XichunAbstract:Experimentally revealing the nanometric deformation behavior of 3C-SiC is challenging due to its ultra-small feature size for brittle-to-Ductile transition. In the present work, we elucidated the nanometric cutting mechanisms of 3C-SiC by performing in situ nanometric cutting experiments under scanning electron microscope (SEM), as well as post-characterization by electron back-scattered diffraction (EBSD) and transmission electron microscopy (TEM). In particular, a new method based on the combination of image processing technology and SEM online observation was proposed to achieve in situ measurement of cutting force with an uncertainty less than 1 mN. Furthermore, the cutting cross-section was characterized by atomic force microscope (AFM) to access the specific cutting energy. The results revealed that the specific cutting energy increase non-linearly with the decrease of cutting depth due to the size effect of cutting tool in nanometric cutting. The high-pressure phase transformation (HPPT) may play the major role in 3C-SiC Ductile Machining under the parameters of this experiment
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Nanocutting mechanism of 6H-SiC investigated by scanning electron microscope online observation and stress-assisted and ion implant-assisted approaches
'Springer Science and Business Media LLC', 2020Co-Authors: Xu Zongwei, Liu Lei, Tian Dongyu, Hartmaier Alexander, Luo Xichun, Zhang Junjie, Nordlund Kai, Rommel Mathias, He Zhongdu, Zhang GuoxiongAbstract:Nanocutting mechanism of single crystal 6H-SiC is investigated through a novel scanning electron microscope setup in this paper. Various undeformed chip thicknesses on (0001) orientation are adopted in the nanocutting experiments. Phase transformation and dislocation activities involved in the 6H-SiC nanocutting process are also characterized and analyzed. Two methods of stress-assisted and ion implant-assisted nanocutting are studied to improve 6H-SiC Ductile Machining ability. Results show that stress-assisted method can effectively decrease the hydrostatic stress and help to activate dislocation motion and Ductile Machining; ion implant-induced damages are helpful to improve the Ductile Machining ability from MD simulation and continuous nanocutting experiments under the online observation platform.Non Peer reviewe
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MD simulation of stress-assisted nanometric cutting mechanism of 3C silicon carbide
'Emerald', 2019Co-Authors: Liu Lei, Xu Zongwei, Tian Dongyu, Hartmaier Alexander, Luo Xichun, Zhang Junjie, Nordlund Kai, Fang FengzhouAbstract:Purpose This paper aims to reveal the mechanism for improving Ductile machinability of 3C-silicon carbide (SiC) and associated cutting mechanism in stress-assisted nanometric cutting. Design/methodology/approach Molecular dynamics simulation of nano-cutting 3C-SiC is carried out in this paper. The following two scenarios are considered: normal nanometric cutting of 3C-SiC; and stress-assisted nanometric cutting of 3C-SiC for comparison. Chip formation, phase transformation, dislocation activities and shear strain during nanometric cutting are analyzed. Findings Negative rake angle can produce necessary hydrostatic stress to achieve Ductile removal by the extrusion in Ductile regime Machining. In Ductile-brittle transition, deformation mechanism of 3C-SiC is combination of plastic deformation dominated by dislocation activities and localization of shear deformation. When cutting depth is greater than 10 nm, material removal is mainly achieved by shear. Stress-assisted Machining can lead to better quality of machined surface. However, there is a threshold for the applied stress to fully gain advantages offered by stress-assisted Machining. Stress-assisted Machining further enhances plastic deformation ability through the active dislocations' movements. Originality/value This work describes a stress-assisted Machining method for improving the surface quality, which could improve 3C-SiC Ductile Machining ability.Peer reviewe
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MD simulation of stress-assisted nanometric cutting mechanism of 3C silicon carbide
'Emerald', 2019Co-Authors: Liu Lei, Xu Zongwei, Hartmaier Alexander, Luo Xichun, Zhang Junjie, Nordlund Kai, Rommel MathiasAbstract:Purpose: This paper aims to reveal the mechanism for improving Ductile machinability of 3C-silicon carbide (SiC) and associated cutting mechanism in stress-assisted nanometric cutting. Design/methodology/approach: Molecular dynamics simulation of nano-cutting 3C-SiC is carried out in this paper. The following two scenarios are considered: normal nanometric cutting of 3C-SiC; and stress-assisted nanometric cutting of 3C-SiC for comparison. Chip formation, phase transformation, dislocation activities and shear strain during nanometric cutting are analyzed. Findings: Negative rake angle can produce necessary hydrostatic stress to achieve Ductile removal by the extrusion in Ductile regime Machining. In Ductile-brittle transition, deformation mechanism of 3C-SiC is combination of plastic deformation dominated by dislocation activities and localization of shear deformation. When cutting depth is greater than 10 nm, material removal is mainly achieved by shear. Stress-assisted Machining can lead to better quality of machined surface. However, there is a threshold for the applied stress to fully gain advantages offered by stress-assisted Machining. Stress-assisted Machining further enhances plastic deformation ability through the active dislocations’ movements. Originality/value: This work describes a stress-assisted Machining method for improving the surface quality, which could improve 3C-SiC Ductile Machining ability
