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A Ignatiev - One of the best experts on this subject based on the ideXlab platform.

  • evidence for an oxygen diffusion model for the Electric Pulse induced resistance change effect in transition metal oxides
    Physical Review Letters, 2007
    Co-Authors: Yibo Nian, J Strozier, Xin Chen, Naijuan Wu, A Ignatiev
    Abstract:

    Electric-Pulse induced resistance hysteresis switching loops for ${\mathrm{Pr}}_{0.7}{\mathrm{Ca}}_{0.3}{\mathrm{MnO}}_{3}$ perovskite oxide films were found to exhibit an additional sharp ``shuttle tail'' peak around the negative Pulse maximum for films deposited in an oxygen-deficient ambient. The resistance relaxation in time of this ``shuttle tail'' peak as well as resistance relaxation in the transition regions of the resistance hysteresis loop show evidence of oxygen diffusion under Electric pulsing, and support a proposed oxygen diffusion model with oxygen vacancy pileup at the metal electrode interface region as the active process for the nonvolatile resistance switching effect in transition-metal oxides.

  • Electric Pulse induced capacitance change effect in perovskite oxide thin films
    Journal of Applied Physics, 2006
    Co-Authors: Shangqing Liu, A Ignatiev
    Abstract:

    A reversible nonvolatile capacitance change effect has been observed in perovskite oxide thin films at room temperature under the application of Electrical Pulses of low voltage and short duration. The Pulse-induced nonvolatile capacitance change is seen to coexist with a Pulse-induced nonvolatile resistance change reported earlier. It is shown that the capacitance values of Pr0.7Ca0.3MnO3 samples can be set to either two specific states or to multiple discrete capacitance levels. The observed effect has potential applications including variable capacitors and nonvolatile two-state or multiple-level memories.

  • spatially extended nature of resistive switching in perovskite oxide thin films
    Applied Physics Letters, 2006
    Co-Authors: Xin Chen, J Strozier, A Ignatiev
    Abstract:

    The authors report the direct observation of the Electric Pulse induced resistance-change effect at the nanoscale on La1−xSrxMnO3 thin films by the current measurement of the atomic force microscopy (AFM) technique. After a switching voltage of one polarity is applied across the sample by the AFM tip, the conductivity in a local nanometer region around the AFM tip is increased, and after a switching voltage of the opposite polarity is applied, the local conductivity is reduced. This reversible resistance switching effect is observed under both continuous and short-Pulse-voltage switching conditions. It is important for future nanoscale nonvolatile memory device applications.

  • evidance for an oxygen diffusion model for the Electric Pulse induced resistance change effect in oxides
    arXiv: Strongly Correlated Electrons, 2006
    Co-Authors: Y B Nian, J Strozier, Xin Chen, A Ignatiev
    Abstract:

    Electric Pulse induced resistance (EPIR) switching hysteresis loops for Pr0.7Ca0.7MnO3 (PCMO) perovskite oxide films were found to exhibit an additional sharp "shuttle peak" around the negative Pulse maximum for films deposited in an oxygen deficient ambient. The device resistance hysteresis loop consists of stable high resistance and low resistance states, and transition regions between them. The resistance relaxation of the "shuttle peak" and its temperature behavior as well as the resistance relaxation in the transition regions were studied, and indicate that the resistance switching relates to oxygen diffusion with activation energy about 0.4eV. An oxygen diffusion model with the oxygen ions (vacancies) as the active agent is proposed for the non-volatile resistance switching effect in PCMO.

  • spatially extended nature of resistive switching in perovskite oxide thin films
    arXiv: Strongly Correlated Electrons, 2006
    Co-Authors: Xin Chen, J Strozier, A Ignatiev
    Abstract:

    We report the direct observation of the Electric Pulse induced resistance-change (EPIR) effect at the nano scale on La1-xSrxMnO3 (LSMO) thin films by the current measurement AFM technique. After a switching voltage of one polarity is applied across the sample by the AFM tip, the conductivity in a local nanometer region around the AFM tip is increased, and after a switching voltage of the opposite polarity is applied, the local conductivity is reduced. This reversible resistance switching effect is observed under both continuous and short Pulse voltage switching conditions. It is important for future nanoscale non-volatile memory device applications.

Tsuneo Yamane - One of the best experts on this subject based on the ideXlab platform.

R P Joshi - One of the best experts on this subject based on the ideXlab platform.

  • ultrashort Electric Pulse induced changes in cellular diElectric properties
    Biochemical and Biophysical Research Communications, 2007
    Co-Authors: Allen L Garner, G Chen, Nianyong Chen, Viswanadham Sridhara, Juergen F Kolb, James R Swanson, Stephen J Beebe, R P Joshi
    Abstract:

    The interaction of nanosecond duration Pulsed Electric fields (nsPEFs) with biological cells, and the models describing this behavior, depend critically on the Electrical properties of the cells being Pulsed. Here, we used time domain diElectric spectroscopy to measure the diElectric properties of Jurkat cells, a malignant human T-cell line, before and after exposure to five 10 ns, 150 kV/cm Electrical Pulses. The cytoplasm and nucleoplasm conductivities decreased dramatically following pulsing, corresponding to previously observed rises in cell suspension conductivity. This suggests that electropermeabilization occurred, resulting in ion transport from the cell’s interior to the exterior. A delayed decrease in cell membrane conductivity after the nsPEFs possibly suggests long-term ion channel damage or use dependence due to repeated membrane charging and discharging. This data could be used in models describing the phenomena at work.

  • simulations of nanopore formation and phosphatidylserine externalization in lipid membranes subjected to a high intensity ultrashort Electric Pulse
    Physical Review E, 2005
    Co-Authors: R P Joshi, K H Schoenbach
    Abstract:

    A combined MD simulator and time dependent Laplace solver are used to analyze the Electrically driven phosphatidylserine externalization process in cells. Time dependent details of nanopore formation at cell membranes in response to a high-intensity (100 kV/cm), ultrashort (10 ns) Electric Pulse are also probed. Our results show that nanosized pores could typically be formed within about 5 ns. These predictions are in very good agreement with recent experimental data. It is also demonstrated that defect formation and PS externalization in membranes should begin on the anode side. Finally, the simulations confirm that PS externalization is a nanopore facilitated event, rather than the result of molecular translocation across the trans-membrane energy barrier.

  • simulations of transient membrane behavior in cells subjected to a high intensity ultrashort Electric Pulse
    Physical Review E, 2005
    Co-Authors: Q Hu, R P Joshi, K H Schoenbach, Stephen J Beebe, S Viswanadham, Peter F Blackmore
    Abstract:

    A molecular dynamics (MD) scheme is combined with a distributed circuit model for a self-consistent analysis of the transient membrane response for cells subjected to an ultrashort (nanosecond) high-intensity ($\ensuremath{\sim}0.01\text{\ensuremath{-}}\mathrm{V}∕\mathrm{nm}$ spatially averaged field) voltage Pulse. The dynamical, stochastic, many-body aspects are treated at the molecular level by resorting to a course-grained representation of the membrane lipid molecules. Coupling the Smoluchowski equation to the distributed Electrical model for current flow provides the time-dependent transmembrane fields for the MD simulations. A good match between the simulation results and available experimental data is obtained. Predictions include pore formation times of about 5--6 ns. It is also shown that the pore formation process would tend to begin from the anodic side of an Electrically stressed membrane. Furthermore, the present simulations demonstrate that ions could facilitate pore formation. This could be of practical importance and have direct relevance to the recent observations of calcium release from the endoplasmic reticulum in cells subjected to such ultrashort, high-intensity Pulses.

  • simulations of transient membrane behavior in cells subjected to a high intensity ultrashort Electric Pulse
    Physical Review E, 2005
    Co-Authors: S Viswanadham, R P Joshi, K H Schoenbach, Stephen J Beebe, Peter F Blackmore
    Abstract:

    A molecular dynamics (MD) scheme is combined with a distributed circuit model for a self-consistent analysis of the transient membrane response for cells subjected to an ultrashort (nanosecond) high-intensity (approximately 0.01-V/nm spatially averaged field) voltage Pulse. The dynamical, stochastic, many-body aspects are treated at the molecular level by resorting to a course-grained representation of the membrane lipid molecules. Coupling the Smoluchowski equation to the distributed Electrical model for current flow provides the time-dependent transmembrane fields for the MD simulations. A good match between the simulation results and available experimental data is obtained. Predictions include pore formation times of about 5-6 ns. It is also shown that the pore formation process would tend to begin from the anodic side of an Electrically stressed membrane. Furthermore, the present simulations demonstrate that ions could facilitate pore formation. This could be of practical importance and have direct relevance to the recent observations of calcium release from the endoplasmic reticulum in cells subjected to such ultrashort, high-intensity Pulses.

C Petrovic - One of the best experts on this subject based on the ideXlab platform.

  • the Electric Pulses induced multi resistance states in the hysteresis temperature range of 1t tas2 and 1t tas1 6se0 4
    arXiv: Materials Science, 2020
    Co-Authors: C Petrovic
    Abstract:

    The Electric Pulse-induced responses of 1T-TaS2 and 1T-TaS1.6Se0.4 crystals in the commensurate charge-density-wave (CCDW) phase in the hysteresis temperature range have been investigated. We observed that abrupt multiple steps of the resistance are excited by Electric Pulses at a fixed temperature forming multi metastable like states. We propose that the response of the system corresponds to the rearrangements of the textures of CCDW domains and the multi-resistance states or the nonvolatile resistance properties excited simply by Electric Pulses have profound significance for the exploration of solid-state devices.

  • the Electric Pulses induced multi resistance states in the hysteresis temperature range of 1t tas2 and 1t tas1 6se0 4
    Applied Physics Letters, 2020
    Co-Authors: C Petrovic
    Abstract:

    The Electric Pulse-induced responses of 1T-TaS2 and 1T-TaS1.6Se0.4 crystals in the commensurate charge-density-wave (CCDW) phase in the hysteresis temperature range have been investigated. We observed that abrupt multi-steps of the resistance are excited by Electric Pulses at a fixed temperature forming multi-metastable like states. We propose that the response of the system corresponds to the rearrangements of the textures of CCDW domains and the multi-resistance states or the nonvolatile resistance properties excited simply by Electric Pulses have profound significance for the exploration of solid-state devices.

Shunsaku Ueda - One of the best experts on this subject based on the ideXlab platform.