The Experts below are selected from a list of 360 Experts worldwide ranked by ideXlab platform
Nicolas Agrait - One of the best experts on this subject based on the ideXlab platform.
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high current density Electrical Breakdown of tis3 nanoribbon based field effect transistors
arXiv: Mesoscale and Nanoscale Physics, 2017Co-Authors: Aday J Molinamendoza, Joshua O Island, Wendel S Paz, Jose M Clamagirand, J R Ares, Eduardo Flores, F Leardini, C Sanchez, Nicolas AgraitAbstract:The high field transport characteristics of nanostructured transistors based on layered materials are not only important from a device physics perspective but also for possible applications in next generation electronics. With the growing promise of layered materials as replacements to conventional silicon technology, we study here the high current density properties of the layered material titanium trisulfide (TiS3). We observe high Breakdown current densities up to 1.7 10^6 A/cm^2 in TiS3 nanoribbon-based field-effect transistors which are among the highest found in semiconducting nanomaterials. Investigating the mechanisms responsible for current Breakdown, we perform a thermogravimetric analysis of bulk TiS3 and compare the results with density functional theory (DFT) and Kinetic Monte Carlo calculations. We conclude that oxidation of TiS3 and subsequent desorption of sulfur atoms plays an important role in the Electrical Breakdown of the material in ambient conditions. Our results show that TiS3 is an attractive material for high power applications and lend insight to the thermal and defect activated mechanisms responsible for Electrical Breakdown in nanostructured devices.
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high current density Electrical Breakdown of tis3 nanoribbon based field effect transistors
Advanced Functional Materials, 2017Co-Authors: Aday J Molinamendoza, Joshua O Island, Wendel S Paz, Jose M Clamagirand, J R Ares, Eduardo Flores, F Leardini, C Sanchez, Nicolas AgraitAbstract:The high field transport characteristics of nanostructured transistors based on layered materials are not only important from a device physics perspective but also for possible applications in next generation electronics. With the growing promise of layered materials as replacements to conventional silicon technology, the high current density properties of the layered material titanium trisulfide (TiS3) are studied here. The high Breakdown current densities of up to 1.7 × 106 A cm−2 are observed in TiS3 nanoribbon-based field-effect transistors, which are among the highest found in semiconducting nanomaterials. Investigating the mechanisms responsible for current Breakdown, a thermogravimetric analysis of bulk TiS3 is performed and the results with density functional theory and kinetic Monte Carlo calculations are compared. In conclusion, the oxidation of TiS3 and subsequent desorption of sulfur atoms play an important role in the Electrical Breakdown of the material in ambient conditions. The results show that TiS3 is an attractive material for high power applications and lend insight into the thermal and defect activated mechanisms responsible for Electrical Breakdown in nanostructured devices.
G Chen - One of the best experts on this subject based on the ideXlab platform.
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space charge modulated Electrical Breakdown
Scientific Reports, 2016Co-Authors: Yuanwei Zhu, Daomin Min, G ChenAbstract:Electrical Breakdown is one of the most important physical phenomena in Electrical and electronic engineering. Since the early 20th century, many theories and models of Electrical Breakdown have been proposed, but the origin of one key issue, that the explanation for dc Breakdown strength being twice or higher than ac Breakdown strength in insulating materials, remains unclear. Here, by employing a bipolar charge transport model, we investigate the space charge dynamics in both dc and ac Breakdown processes. We demonstrate the differences in charge accumulations under both dc and ac stresses and estimate the Breakdown strength, which is modulated by the electric field distortion induced by space charge. It is concluded that dc Breakdown initializes in the bulk whereas ac Breakdown initializes in the vicinity of the sample-electrode interface. Compared with dc Breakdown, the lower Breakdown strength under ac stress and the decreasing Breakdown strength with an increase in applied frequency, are both attributed to the electric field distortion induced by space charges located in the vicinity of the electrodes.
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space charge and ac Electrical Breakdown strength in polyethylene
Conference on Electrical Insulation and Dielectric Phenomena, 2015Co-Authors: Churui Zhou, G ChenAbstract:Breakdown strength is an essential feature of dielectrics. Theoretically, the intrinsic strength is independent of the configuration of the dielectrics or electrodes and the category of applied electric fields. However, the measured Breakdown strengths of a same material under direct high voltage (HVDC) and alternative high voltage (HVAC) are significantly different. This paper aims to give an explanation of this observed phenomenon based on constant intrinsic Electrical Breakdown strength and reveal the significant influence of charge transport on the Breakdown process. The effect of space charge on dielectric performances is generally neglected under high voltage alternate current (HVAC) electric fields, due to the limited charge amount observed. The characteristics of space charge in polymeric under AC stresses and its importance to the Breakdown strength of polyethylene are also presented in this paper. A numerical model based on space charge dynamics under high voltage electric fields has been used to explain the differences in the Breakdown strength of polyethylene under AC and DC stresses. Bipolar charge transport theory is adopted to analyse the charge transportation processes. Space charge profiles at the time of Breakdown occurrence under different electric fields (including DC voltage, 0.5, 5 and 50 Hz AC voltages) and in the samples with different thicknesses (from 50 to 200 µm) are simulated. The relationship between space charge and the Breakdown strength is discussed. The simulated results agree well with the trend of experimental Breakdown results: generally, Breakdown occurs easier under AC stress than DC stress; the Breakdown strength is increased with the decrease of the sample thickness. The results suggest the presence of space charge under AC stresses has a great impact on electric Breakdown strength of the material.
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origin of thickness dependent dc Electrical Breakdown in dielectrics
Applied Physics Letters, 2012Co-Authors: G Chen, Junwei Zhao, Lisheng ZhongAbstract:A model based on space charge dynamics under high dc electric field has been proposed to explain commonly observed thickness dependent Breakdown of polymeric material. The formation and dynamics of space charge will result in local electric field enhancement that has a direct impact on dielectric Breakdown. The simulation results show that the Breakdown depends on the sample thickness with a power index of 0.143, indicating the space charge and its dynamics are responsible for thickness dependent Breakdown. The model also predicts the effect of voltage ramping rate on the Electrical Breakdown strength.
Lisheng Zhong - One of the best experts on this subject based on the ideXlab platform.
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origin of thickness dependent dc Electrical Breakdown in dielectrics
Applied Physics Letters, 2012Co-Authors: G Chen, Junwei Zhao, Lisheng ZhongAbstract:A model based on space charge dynamics under high dc electric field has been proposed to explain commonly observed thickness dependent Breakdown of polymeric material. The formation and dynamics of space charge will result in local electric field enhancement that has a direct impact on dielectric Breakdown. The simulation results show that the Breakdown depends on the sample thickness with a power index of 0.143, indicating the space charge and its dynamics are responsible for thickness dependent Breakdown. The model also predicts the effect of voltage ramping rate on the Electrical Breakdown strength.
D R Clarke - One of the best experts on this subject based on the ideXlab platform.
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the thickness and stretch dependence of the Electrical Breakdown strength of an acrylic dielectric elastomer
Applied Physics Letters, 2012Co-Authors: Jiangshui Huang, Zhigang Suo, Samuel Shian, Roger Diebold, D R ClarkeAbstract:The performance of dielectric elastomer actuators is limited by Electrical Breakdown. Attempts to measure this are confounded by the voltage-induced thinning of the elastomer. A test configuration is introduced that avoids this problem: A thin sheet of elastomer is stretched, crossed-wire electrodes are attached, and then embedded in a stiff polymer. The applied electric field at Breakdown, EB, is found to depend on both the deformed thickness, h, and the stretch applied, λ. For the acrylic elastomer investigated, the Breakdown field scales as EB = 51 h − 0.25 λ 0.63. The test configuration allows multiple individual tests to be made on the same sheet of elastomer.
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the thickness and stretch dependence of the Electrical Breakdown strength of an acrylic dielectric elastomer
Applied Physics Letters, 2012Co-Authors: Jiangshui Huang, Samuel Shian, Roger Mitchell Diebold, D R ClarkeAbstract:The performance of dielectric elastomer actuators is limited by Electrical Breakdown. Attempts to measure this are confounded by the voltage-induced thinning of the elastomer. A test configuration is introduced that avoids this problem: A thin sheet of elastomer is stretched, crossed-wire electrodes are attached, and then embedded in a stiff polymer. The applied electric field at Breakdown, EB, is found to depend on both the deformed thickness, h, and the stretch applied, λ. For the acrylic elastomer investigated, the Breakdown field scales as EB = 51 h − 0.25 λ 0.63. The test configuration allows multiple individual tests to be made on the same sheet of elastomer.
Aday J Molinamendoza - One of the best experts on this subject based on the ideXlab platform.
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high current density Electrical Breakdown of tis3 nanoribbon based field effect transistors
arXiv: Mesoscale and Nanoscale Physics, 2017Co-Authors: Aday J Molinamendoza, Joshua O Island, Wendel S Paz, Jose M Clamagirand, J R Ares, Eduardo Flores, F Leardini, C Sanchez, Nicolas AgraitAbstract:The high field transport characteristics of nanostructured transistors based on layered materials are not only important from a device physics perspective but also for possible applications in next generation electronics. With the growing promise of layered materials as replacements to conventional silicon technology, we study here the high current density properties of the layered material titanium trisulfide (TiS3). We observe high Breakdown current densities up to 1.7 10^6 A/cm^2 in TiS3 nanoribbon-based field-effect transistors which are among the highest found in semiconducting nanomaterials. Investigating the mechanisms responsible for current Breakdown, we perform a thermogravimetric analysis of bulk TiS3 and compare the results with density functional theory (DFT) and Kinetic Monte Carlo calculations. We conclude that oxidation of TiS3 and subsequent desorption of sulfur atoms plays an important role in the Electrical Breakdown of the material in ambient conditions. Our results show that TiS3 is an attractive material for high power applications and lend insight to the thermal and defect activated mechanisms responsible for Electrical Breakdown in nanostructured devices.
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high current density Electrical Breakdown of tis3 nanoribbon based field effect transistors
Advanced Functional Materials, 2017Co-Authors: Aday J Molinamendoza, Joshua O Island, Wendel S Paz, Jose M Clamagirand, J R Ares, Eduardo Flores, F Leardini, C Sanchez, Nicolas AgraitAbstract:The high field transport characteristics of nanostructured transistors based on layered materials are not only important from a device physics perspective but also for possible applications in next generation electronics. With the growing promise of layered materials as replacements to conventional silicon technology, the high current density properties of the layered material titanium trisulfide (TiS3) are studied here. The high Breakdown current densities of up to 1.7 × 106 A cm−2 are observed in TiS3 nanoribbon-based field-effect transistors, which are among the highest found in semiconducting nanomaterials. Investigating the mechanisms responsible for current Breakdown, a thermogravimetric analysis of bulk TiS3 is performed and the results with density functional theory and kinetic Monte Carlo calculations are compared. In conclusion, the oxidation of TiS3 and subsequent desorption of sulfur atoms play an important role in the Electrical Breakdown of the material in ambient conditions. The results show that TiS3 is an attractive material for high power applications and lend insight into the thermal and defect activated mechanisms responsible for Electrical Breakdown in nanostructured devices.