The Experts below are selected from a list of 32775 Experts worldwide ranked by ideXlab platform

Cunzheng Ning - One of the best experts on this subject based on the ideXlab platform.

  • fabrication challenges of Electrical Injection metallic cavity semiconductor nanolasers
    Semiconductor Science and Technology, 2013
    Co-Authors: K Ding, Cunzheng Ning
    Abstract:

    The recently emerged metallic-cavity nanolasers have opened a new phase of miniaturization of semiconductor lasers down to sub-wavelength scale. This new type of semiconductor lasers is suitable for many low-power applications due to its small size, tight optical confinement and good heat dissipation. However, there are major technical challenges in the fabrication of such nanolasers that must be overcome to make high-quality devices with high yield needed for practical applications. Here we will discuss several fabrication issues that are critical to the device performance. These issues, including device patterning, pillar etching, surface passivation and metal deposition, will determine both optical and Electrical properties, especially the lifetime, threshold, and efficiency of a nanolaser.

  • record performance of Electrical Injection sub wavelength metallic cavity semiconductor lasers at room temperature
    Optics Express, 2013
    Co-Authors: K Ding, M T Hill, Van Pj Rene Veldhoven, Cunzheng Ning
    Abstract:

    We demonstrate a continuous wave (CW) sub-wavelength metallic-cavity semiconductor laser with Electrical Injection at room temperature (RT). Our metal-cavity laser with a cavity volume of 0.67λ3 (λ = 1591 nm) shows a linewidth of 0.5 nm at RT, which corresponds to a Q-value of 3182 compared to 235 of the cavity Q, the highest Q under lasing condition for RT CW operation of any sub-wavelength metallic-cavity laser. Such record performance provides convincing evidences of the feasibility of RT CW sub-wavelength metallic-cavity lasers, thus opening a wide range of practical possibilities of novel nanophotonic devices based on metal-semiconductor structures.

  • record performance of Electrical Injection sub wavelength metallic cavity semiconductor lasers at room temperature
    arXiv: Optics, 2012
    Co-Authors: K Ding, M T Hill, Zhicheng Liu, Leijun Yin, P J Van Veldhoven, Cunzheng Ning
    Abstract:

    Metallic-Cavity lasers or plasmonic nanolasers of sub-wavelength sizes have attracted great attentions in recent years, with the ultimate goal of achieving continuous wave (CW), room temperature (RT) operation under Electrical Injection. Despite great efforts, a conclusive and convincing demonstration of this goal has proven challenging. By overcoming several fabrication challenges imposed by the stringent requirement of such small scale devices, we were finally able to achieve this ultimate goal. Our metallic nanolaser with a cavity volume of 0.67{\lambda}3 ({\lambda}=1591 nm) shows a linewidth of 0.5 nm at RT, which corresponds to a Q-value of 3182 compared to 235 of the cavity Q, the highest Q under lasing condition for RT CW operation of any sub-wavelength laser. Such record performance provides convincing evidences of the feasibility of RT CW metallic nanolasers, thus opening a wide range of practical possibilities of novel nanophotonic devices based on metal-semiconductor structures.

  • room temperature continuous wave lasing in deep subwavelength metallic cavities under Electrical Injection
    Physical Review B, 2012
    Co-Authors: K Ding, M T Hill, Zhicheng Liu, Leijun Yin, Milan J H Marell, P J Van Veldhoven, R Noetzel, Cunzheng Ning
    Abstract:

    Plasmonic nanolasers and spasers continue to attract a great deal of interest from the physics and nanophotonics community, with the experimental observation of lasing as a focus of research. We report the observation of continuous wave lasing in metallic cavities of deep subwavelength sizes under Electrical Injection, operating at room temperature. The volume of the nanolaser is as small as 0.42\ensuremath{\lambda}${}^{3}$, where \ensuremath{\lambda} $=$ 1.55 \ensuremath{\mu}m is the lasing wavelength. This demonstration will help answer the question of how small a nanolaser can be made, and will likely stimulate a wide range of fundamental studies in basic laser physics and quantum optics on truly subwavelength scales. In addition, such nanolasers may lead to many potential applications, such as on-chip integrated photonic systems for communication, computing, and detection.

  • Electrical Injection continuous wave operation of subwavelength metallic cavity lasers at 260 k
    Applied Physics Letters, 2011
    Co-Authors: K Ding, M T Hill, Zhicheng Liu, Leijun Yin, Milan J H Marell, P J Van Veldhoven, Hua Wang, Ruibin Liu, R Notzel, Cunzheng Ning
    Abstract:

    We report continuous wave lasing operation at T=260 K of subwavelength-metallic-cavities with semiconductor core encapsulated in silver under electric Injection. The physical cavity volumes of the two lasers presented are 0.96λ3 (λ=1563.4 nm) and 0.78λ3 (λ=1488.7 nm), respectively. Longitudinal modes observed in one of lasers correspond to the Fabry–Perot cavity in the length direction. Such record high temperature operation of a subwavelength laser is of great importance for the development of small light sources in future integrated photonic circuits and other on-chip applications.

K Ding - One of the best experts on this subject based on the ideXlab platform.

  • fabrication challenges of Electrical Injection metallic cavity semiconductor nanolasers
    Semiconductor Science and Technology, 2013
    Co-Authors: K Ding, Cunzheng Ning
    Abstract:

    The recently emerged metallic-cavity nanolasers have opened a new phase of miniaturization of semiconductor lasers down to sub-wavelength scale. This new type of semiconductor lasers is suitable for many low-power applications due to its small size, tight optical confinement and good heat dissipation. However, there are major technical challenges in the fabrication of such nanolasers that must be overcome to make high-quality devices with high yield needed for practical applications. Here we will discuss several fabrication issues that are critical to the device performance. These issues, including device patterning, pillar etching, surface passivation and metal deposition, will determine both optical and Electrical properties, especially the lifetime, threshold, and efficiency of a nanolaser.

  • record performance of Electrical Injection sub wavelength metallic cavity semiconductor lasers at room temperature
    Optics Express, 2013
    Co-Authors: K Ding, M T Hill, Van Pj Rene Veldhoven, Cunzheng Ning
    Abstract:

    We demonstrate a continuous wave (CW) sub-wavelength metallic-cavity semiconductor laser with Electrical Injection at room temperature (RT). Our metal-cavity laser with a cavity volume of 0.67λ3 (λ = 1591 nm) shows a linewidth of 0.5 nm at RT, which corresponds to a Q-value of 3182 compared to 235 of the cavity Q, the highest Q under lasing condition for RT CW operation of any sub-wavelength metallic-cavity laser. Such record performance provides convincing evidences of the feasibility of RT CW sub-wavelength metallic-cavity lasers, thus opening a wide range of practical possibilities of novel nanophotonic devices based on metal-semiconductor structures.

  • record performance of Electrical Injection sub wavelength metallic cavity semiconductor lasers at room temperature
    arXiv: Optics, 2012
    Co-Authors: K Ding, M T Hill, Zhicheng Liu, Leijun Yin, P J Van Veldhoven, Cunzheng Ning
    Abstract:

    Metallic-Cavity lasers or plasmonic nanolasers of sub-wavelength sizes have attracted great attentions in recent years, with the ultimate goal of achieving continuous wave (CW), room temperature (RT) operation under Electrical Injection. Despite great efforts, a conclusive and convincing demonstration of this goal has proven challenging. By overcoming several fabrication challenges imposed by the stringent requirement of such small scale devices, we were finally able to achieve this ultimate goal. Our metallic nanolaser with a cavity volume of 0.67{\lambda}3 ({\lambda}=1591 nm) shows a linewidth of 0.5 nm at RT, which corresponds to a Q-value of 3182 compared to 235 of the cavity Q, the highest Q under lasing condition for RT CW operation of any sub-wavelength laser. Such record performance provides convincing evidences of the feasibility of RT CW metallic nanolasers, thus opening a wide range of practical possibilities of novel nanophotonic devices based on metal-semiconductor structures.

  • room temperature continuous wave lasing in deep subwavelength metallic cavities under Electrical Injection
    Physical Review B, 2012
    Co-Authors: K Ding, M T Hill, Zhicheng Liu, Leijun Yin, Milan J H Marell, P J Van Veldhoven, R Noetzel, Cunzheng Ning
    Abstract:

    Plasmonic nanolasers and spasers continue to attract a great deal of interest from the physics and nanophotonics community, with the experimental observation of lasing as a focus of research. We report the observation of continuous wave lasing in metallic cavities of deep subwavelength sizes under Electrical Injection, operating at room temperature. The volume of the nanolaser is as small as 0.42\ensuremath{\lambda}${}^{3}$, where \ensuremath{\lambda} $=$ 1.55 \ensuremath{\mu}m is the lasing wavelength. This demonstration will help answer the question of how small a nanolaser can be made, and will likely stimulate a wide range of fundamental studies in basic laser physics and quantum optics on truly subwavelength scales. In addition, such nanolasers may lead to many potential applications, such as on-chip integrated photonic systems for communication, computing, and detection.

  • Electrical Injection continuous wave operation of subwavelength metallic cavity lasers at 260 k
    Applied Physics Letters, 2011
    Co-Authors: K Ding, M T Hill, Zhicheng Liu, Leijun Yin, Milan J H Marell, P J Van Veldhoven, Hua Wang, Ruibin Liu, R Notzel, Cunzheng Ning
    Abstract:

    We report continuous wave lasing operation at T=260 K of subwavelength-metallic-cavities with semiconductor core encapsulated in silver under electric Injection. The physical cavity volumes of the two lasers presented are 0.96λ3 (λ=1563.4 nm) and 0.78λ3 (λ=1488.7 nm), respectively. Longitudinal modes observed in one of lasers correspond to the Fabry–Perot cavity in the length direction. Such record high temperature operation of a subwavelength laser is of great importance for the development of small light sources in future integrated photonic circuits and other on-chip applications.

C Weisbuch - One of the best experts on this subject based on the ideXlab platform.

  • identification of auger effect as the dominant mechanism for efficiency droop of leds
    Proceedings of SPIE, 2014
    Co-Authors: Jacques Peretti, Marco Piccardo, Justin Iveland, Lucio Martinelli, C Weisbuch, James S Speck
    Abstract:

    We discuss the unambiguous detection of Auger electrons by electron emission (EE) spectroscopy from a cesiated InGaN/GaN light-emitting diode (LED) under Electrical Injection. Electron emission spectra were measured as a function of the current injected in the device. The appearance of high-energy electron peaks simultaneously with the droop in LED efficiency shows that hot carriers are being generated in the active region (InGaN quantum wells) by an Auger process. A linear correlation was measured between the high energy emitted electron current and the “droop current” - the missing component of the injected current for light emission. We conclude that the droop originates from the onset of Auger processes. We compare such a direct identification of the droop mechanism with other identifications, most of them indirect and based on the many-parameter modeling of the dependence of the external quantum efficiency on the carrier Injection.

  • direct measurement of auger electrons emitted from a semiconductor light emitting diode under Electrical Injection identification of the dominant mechanism for efficiency droop
    Physical Review Letters, 2013
    Co-Authors: Justin Iveland, Lucio Martinelli, Jacques Peretti, James S Speck, C Weisbuch
    Abstract:

    We report on the unambiguous detection of Auger electrons by electron emission spectroscopy from a cesiated $\mathrm{InGaN}/\mathrm{GaN}$ light-emitting diode under Electrical Injection. Electron emission spectra were measured as a function of the current injected in the device. The appearance of high energy electron peaks simultaneously with an observed drop in electroluminescence efficiency shows that hot carriers are being generated in the active region (InGaN quantum wells) by an Auger process. A linear correlation was measured between the high energy emitted electron current and the ``droop current''---the missing component of the injected current for light emission. We conclude that the droop phenomenon in GaN light-emitting diodes originates from the excitation of Auger processes.

  • direct measurement of internal quantum efficiency in light emitting diodes under Electrical Injection
    Journal of Applied Physics, 2011
    Co-Authors: Elison Matioli, C Weisbuch
    Abstract:

    A method is presented for the direct measurement of the internal quantum efficiency in light emitting diodes (LEDs), based on the ratio of the measured external quantum efficiency and the calculated light extraction efficiency. The external quantum efficiency is measured from a single facet of the device in a simple, well-defined geometry, for which the light extraction efficiency can be calculated with good accuracy. In the proposed method, all LED facets are coated with highly absorbing material which suppresses any light that is not directly emitted into a small aperture on the top facet of the LED. We present a full wave optical model for a multilayer LED structure, from which we derive and validate an approximate model to easily calculate the extraction efficiency through the top facet of the LED. Because a current spreading electrode, often metallic, is required for uniform Injection, we show that its impact on the extraction efficiency can be simply modeled through a separate transmission function calculated from the complex index of refraction of the electrode material. The various assumptions made to justify the direct emission model through a single facet (absence of photon backscatter, no photon recycling, simplified device layer model) are discussed and evaluated. The model is applied to a specific GaN LED structure. (C) 2011 American Institute of Physics. [doi:10.1063/1.3549730]

M T Hill - One of the best experts on this subject based on the ideXlab platform.

  • record performance of Electrical Injection sub wavelength metallic cavity semiconductor lasers at room temperature
    Optics Express, 2013
    Co-Authors: K Ding, M T Hill, Van Pj Rene Veldhoven, Cunzheng Ning
    Abstract:

    We demonstrate a continuous wave (CW) sub-wavelength metallic-cavity semiconductor laser with Electrical Injection at room temperature (RT). Our metal-cavity laser with a cavity volume of 0.67λ3 (λ = 1591 nm) shows a linewidth of 0.5 nm at RT, which corresponds to a Q-value of 3182 compared to 235 of the cavity Q, the highest Q under lasing condition for RT CW operation of any sub-wavelength metallic-cavity laser. Such record performance provides convincing evidences of the feasibility of RT CW sub-wavelength metallic-cavity lasers, thus opening a wide range of practical possibilities of novel nanophotonic devices based on metal-semiconductor structures.

  • record performance of Electrical Injection sub wavelength metallic cavity semiconductor lasers at room temperature
    arXiv: Optics, 2012
    Co-Authors: K Ding, M T Hill, Zhicheng Liu, Leijun Yin, P J Van Veldhoven, Cunzheng Ning
    Abstract:

    Metallic-Cavity lasers or plasmonic nanolasers of sub-wavelength sizes have attracted great attentions in recent years, with the ultimate goal of achieving continuous wave (CW), room temperature (RT) operation under Electrical Injection. Despite great efforts, a conclusive and convincing demonstration of this goal has proven challenging. By overcoming several fabrication challenges imposed by the stringent requirement of such small scale devices, we were finally able to achieve this ultimate goal. Our metallic nanolaser with a cavity volume of 0.67{\lambda}3 ({\lambda}=1591 nm) shows a linewidth of 0.5 nm at RT, which corresponds to a Q-value of 3182 compared to 235 of the cavity Q, the highest Q under lasing condition for RT CW operation of any sub-wavelength laser. Such record performance provides convincing evidences of the feasibility of RT CW metallic nanolasers, thus opening a wide range of practical possibilities of novel nanophotonic devices based on metal-semiconductor structures.

  • room temperature continuous wave lasing in deep subwavelength metallic cavities under Electrical Injection
    Physical Review B, 2012
    Co-Authors: K Ding, M T Hill, Zhicheng Liu, Leijun Yin, Milan J H Marell, P J Van Veldhoven, R Noetzel, Cunzheng Ning
    Abstract:

    Plasmonic nanolasers and spasers continue to attract a great deal of interest from the physics and nanophotonics community, with the experimental observation of lasing as a focus of research. We report the observation of continuous wave lasing in metallic cavities of deep subwavelength sizes under Electrical Injection, operating at room temperature. The volume of the nanolaser is as small as 0.42\ensuremath{\lambda}${}^{3}$, where \ensuremath{\lambda} $=$ 1.55 \ensuremath{\mu}m is the lasing wavelength. This demonstration will help answer the question of how small a nanolaser can be made, and will likely stimulate a wide range of fundamental studies in basic laser physics and quantum optics on truly subwavelength scales. In addition, such nanolasers may lead to many potential applications, such as on-chip integrated photonic systems for communication, computing, and detection.

  • Electrical Injection continuous wave operation of subwavelength metallic cavity lasers at 260 k
    Applied Physics Letters, 2011
    Co-Authors: K Ding, M T Hill, Zhicheng Liu, Leijun Yin, Milan J H Marell, P J Van Veldhoven, Hua Wang, Ruibin Liu, R Notzel, Cunzheng Ning
    Abstract:

    We report continuous wave lasing operation at T=260 K of subwavelength-metallic-cavities with semiconductor core encapsulated in silver under electric Injection. The physical cavity volumes of the two lasers presented are 0.96λ3 (λ=1563.4 nm) and 0.78λ3 (λ=1488.7 nm), respectively. Longitudinal modes observed in one of lasers correspond to the Fabry–Perot cavity in the length direction. Such record high temperature operation of a subwavelength laser is of great importance for the development of small light sources in future integrated photonic circuits and other on-chip applications.

W Stolz - One of the best experts on this subject based on the ideXlab platform.

  • Electrical Injection type ii gain as ga assb gain as single w quantum well laser at 1 2 µm
    Electronics Letters, 2016
    Co-Authors: C Fuchs, S Reinhard, Christian Berger, Christoph Moller, M J Weseloh, J Hader, J V Moloney, Stephan W Koch, W Stolz
    Abstract:

    Highly efficient interface-dominated Electrical Injection lasers in the near-infrared regime based on the type-II band alignment in (GaIn)As/Ga(AsSb)/(GaIn)As single ‘W’-quantum wells are realised. The structure is designed by applying a fully microscopic theory, grown by metal organic vapour phase epitaxy, and characterised using electroluminescence measurements and broad-area laser studies. A characteristic blue shift of 93 meV/(kA/cm2) with increasing charge carrier density is observed and compared with theoretical investigations. Low threshold current densities of 0.4 kA/cm2, high differential efficiencies of 66%, optical output powers of 1.4 W per facet, and internal losses of only 1.9 cm−1 are observed at a wavelength of 1164 nm for a cavity length of 930 µm. For a cavity length of 2070 µm, the threshold current density is reduced to 0.1 kA/cm2. No indication for type-I related transitions for current densities up to 4.6 kA/cm2 is observed.

  • Electrical Injection ga asbi alga as single quantum well laser
    Applied Physics Letters, 2013
    Co-Authors: P Ludewig, S Chatterjee, Nadir Hossain, W Stolz, S Reinhard, Nikolai Knaub, L Nattermann, I P Marko, K Hild, S J Sweeney
    Abstract:

    The Ga(AsBi) material system opens opportunities in the field of high efficiency infrared laser diodes. We report on the growth, structural investigations, and lasing properties of dilute bismide Ga(AsBi)/(AlGa)As single quantum well lasers with 2.2% Bi grown by metal organic vapor phase epitaxy on GaAs (001) substrates. Electrically injected laser operation at room temperature is achieved with a threshold current density of 1.56 kA/cm2 at an emission wavelength of ∼947 nm. These results from broad area devices show great promise for developing efficient IR laser diodes based on this emerging materials system.

  • dilute nitride ga nasp gap heterostructures toward a material development for novel optoelectronic functionality on si substrate
    Physica Status Solidi B-basic Solid State Physics, 2007
    Co-Authors: B Kunert, K Volz, W Stolz
    Abstract:

    The current status of the development of the novel dilute nitride Ga(NAsP)/GaP for the monolithic integration of optoelectronic functionality to Si is summarized from the concept, design and epitaxial optimization to the verification of direct energy gap and the realization of Electrical Injection laser devices at room temperature. (© 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

  • near room temperature Electrical Injection lasing for dilute nitride ga nasp gap quantum well structures grown by metal organic vapour phase epitaxy
    Electronics Letters, 2006
    Co-Authors: B Kunert, K Volz, S Reinhard, A Klehr, W Stolz
    Abstract:

    Electrical Injection lasing has been verified for GaP-based broad-area Ga(NAsP)/GaP single-quantum-well heterostructures near room temperature for the first time. The lasers have been grown by metal organic vapour phase epitaxy. Owing to the comparable lattice constants of this novel material system to that of Si, this novel dilute nitride III/V laser material might be applied for optoelectronic devices integrated to Si microelectronics in the future.

  • first demonstration of Electrical Injection lasing in the novel dilute nitride ga nasp gap material system
    Physica Status Solidi (c), 2006
    Co-Authors: B Kunert, K Volz, S Reinhard, J Koch, M Lampalzer, W Stolz
    Abstract:

    Quantum well heterostructures (QWH) in the novel dilute nitride Ga(NAsP)/GaP-material system have been grown pseudomorphically strained to GaP-substrate by metal organic vapour phase epitaxy (MOVPE). The high crystalline perfection has been determined by detailed structural analysis applying high-resolution X-ray diffrcation (XRD). The active QWH have been embedded in (AlGa)P/GaP-waveguide structures. Electrical Injection lasing has been verified for broad area laser devices at low temperatures (80K–150K) for the first time in this novel material system. (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)