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Martin C Schubert - One of the best experts on this subject based on the ideXlab platform.

  • optimized multicrystalline silicon for solar cells enabling conversion efficiencies of 22
    Solar Energy Materials and Solar Cells, 2017
    Co-Authors: Florian Schindler, B Michl, Patricia Krenckel, Stephan Riepe, Jan Benick, Ralph Muller, Armin Richter, S W Glunz, Martin C Schubert
    Abstract:

    Abstract Multicrystalline (mc) n-type silicon has proven to be a suitable substrate for the fabrication of highly efficient mc-Si solar cells. In this paper, we elaborate the impact of base Material parameters on the efficiency potential of n-type mc-Si solar cells featuring a boron-diffused front side emitter and a full-area passivating rear contact (TOPCon). The Electrical Material quality can be significantly improved by replacing the standard crystallization process with a seed-assisted growth for crystallization of high-performance (HP) mc silicon. Using high-purity quartz crucibles or larger crucibles in combination with an optimization of the grain boundary area fraction with an adapted seed structure leads to further improvements of the Material quality in terms of charge carrier lifetimes. However, not only the charge carrier lifetime, but also the base resistivity is of crucial importance for the efficiency potential depending on the cell concept. Based on experimental data and simulations, we assess the optimal range for the base resistivity and the wafer thickness for n-type mc-Si TOPCon solar cells. With the optimal Material parameters, an “efficiency limiting bulk recombination analysis” (ELBA) reveals an efficiency potential in the range of 22.5% for n-type mc-Si TOPCon solar cells. Finally, we fabricated TOPCon solar cells based on optimized n-type HP mc-Si substrate and demonstrate a certified efficiency of 21.9%, which is the highest efficiency reported for multicrystalline silicon solar cells so far.

  • solar cell efficiency losses due to impurities from the crucible in multicrystalline silicon
    IEEE Journal of Photovoltaics, 2014
    Co-Authors: Florian Schindler, B Michl, Jonas Schon, Wolfram Kwapil, Wilhelm Warta, Martin C Schubert
    Abstract:

    The Electrical Material quality of multicrystalline (mc) silicon for photovoltaic applications suffers from crystal defects as well as from impurities that originate from the feedstock, the quartz crucible, and its coating. In this study, we investigate the influence of impurities from the crucible on efficiency losses in mc silicon solar cells, focusing on the limitation due to iron. The applicability of p-type mc silicon, crystallized in G1 sized crucibles of industrial Material quality and very pure Electrically fused silica, for a high-efficiency solar cell process is examined by measuring lifetime and interstitial iron concentration in the wafers after different processing steps and by estimating the cell efficiency potential from injection-dependent bulk lifetime measurements. Interstitial iron concentrations extracted from 2-D simulations of iron precipitation at crystal defects and gettering during processing agree well with Fei measurements at different process stages and explain the observations. Efficiency losses are quantified to losses due to segregated impurities diffused into the silicon melt, losses due to decorated crystal defects and losses due to solid-state diffusion into the crystal. By using a high-purity crucible, losses are reduced significantly and an efficiency gain of 0.5% absolute is estimated to be attainable on wafers with edge region.

Florian Schindler - One of the best experts on this subject based on the ideXlab platform.

  • optimized multicrystalline silicon for solar cells enabling conversion efficiencies of 22
    Solar Energy Materials and Solar Cells, 2017
    Co-Authors: Florian Schindler, B Michl, Patricia Krenckel, Stephan Riepe, Jan Benick, Ralph Muller, Armin Richter, S W Glunz, Martin C Schubert
    Abstract:

    Abstract Multicrystalline (mc) n-type silicon has proven to be a suitable substrate for the fabrication of highly efficient mc-Si solar cells. In this paper, we elaborate the impact of base Material parameters on the efficiency potential of n-type mc-Si solar cells featuring a boron-diffused front side emitter and a full-area passivating rear contact (TOPCon). The Electrical Material quality can be significantly improved by replacing the standard crystallization process with a seed-assisted growth for crystallization of high-performance (HP) mc silicon. Using high-purity quartz crucibles or larger crucibles in combination with an optimization of the grain boundary area fraction with an adapted seed structure leads to further improvements of the Material quality in terms of charge carrier lifetimes. However, not only the charge carrier lifetime, but also the base resistivity is of crucial importance for the efficiency potential depending on the cell concept. Based on experimental data and simulations, we assess the optimal range for the base resistivity and the wafer thickness for n-type mc-Si TOPCon solar cells. With the optimal Material parameters, an “efficiency limiting bulk recombination analysis” (ELBA) reveals an efficiency potential in the range of 22.5% for n-type mc-Si TOPCon solar cells. Finally, we fabricated TOPCon solar cells based on optimized n-type HP mc-Si substrate and demonstrate a certified efficiency of 21.9%, which is the highest efficiency reported for multicrystalline silicon solar cells so far.

  • solar cell efficiency losses due to impurities from the crucible in multicrystalline silicon
    IEEE Journal of Photovoltaics, 2014
    Co-Authors: Florian Schindler, B Michl, Jonas Schon, Wolfram Kwapil, Wilhelm Warta, Martin C Schubert
    Abstract:

    The Electrical Material quality of multicrystalline (mc) silicon for photovoltaic applications suffers from crystal defects as well as from impurities that originate from the feedstock, the quartz crucible, and its coating. In this study, we investigate the influence of impurities from the crucible on efficiency losses in mc silicon solar cells, focusing on the limitation due to iron. The applicability of p-type mc silicon, crystallized in G1 sized crucibles of industrial Material quality and very pure Electrically fused silica, for a high-efficiency solar cell process is examined by measuring lifetime and interstitial iron concentration in the wafers after different processing steps and by estimating the cell efficiency potential from injection-dependent bulk lifetime measurements. Interstitial iron concentrations extracted from 2-D simulations of iron precipitation at crystal defects and gettering during processing agree well with Fei measurements at different process stages and explain the observations. Efficiency losses are quantified to losses due to segregated impurities diffused into the silicon melt, losses due to decorated crystal defects and losses due to solid-state diffusion into the crystal. By using a high-purity crucible, losses are reduced significantly and an efficiency gain of 0.5% absolute is estimated to be attainable on wafers with edge region.

Mauro Rotatori - One of the best experts on this subject based on the ideXlab platform.

  • evaluation of the concentration of the toxic 2 3 6 7 tetrachlorobiphenylene in air after an Electrical Material fire
    Journal of Hazardous Materials, 2020
    Co-Authors: Valentina Colapicchioni, Silvia Mosca, Marina Cerasa, Paolo Benedetti, Ettore Guerriero, Mattia Perilli, Mauro Rotatori
    Abstract:

    Abstract It is known that when fires or explosions involve Electrical systems, along with PCDDs and PCDFs, polychlorinated biphenylenes (PCBPs) are also produced. These chlorinated tricyclic aromatic pollutants were noticed in fire rubbles and after the World Trade Center destruction. However, the analytical difficulties in developing an efficient method have limited the knowledge of their environmental distribution. In light of the equipotency of 2,3,6,7-TeCBP and 2,3,7,8-TeCDD, PCBPs call for more accurate investigations. In this paper, for the first time, the level and persistence of 2,3,6,7-TeCBP have been investigated in air samples (both indoor and outdoor) after a fire broke out in an industrial building. GC–MS/MS analysis revealed that 2,3,6,7-TeCBP concentrations after the fire (3046 fg/m3 at the “epicentre”) were remarkably higher than that of the 2,3,7,8-TeCDD. Moreover, the monitoring for over two years has demonstrated the persistent nature of this compound. 2,3,6,7-TeCBP was also analyzed in two different ambient air scenario: industrial and periurban areas and in both cases its concentrations were no matter of concern, confirming the correlation of 2,3,6,7-TeCBP with fire episodes. Collectively, 2,3,6,7-TeCBP, because of its toxicity, concentration and persistence, is a crucial compound in the evaluation of the health effects correlated with fires of Electrical systems.

B Michl - One of the best experts on this subject based on the ideXlab platform.

  • optimized multicrystalline silicon for solar cells enabling conversion efficiencies of 22
    Solar Energy Materials and Solar Cells, 2017
    Co-Authors: Florian Schindler, B Michl, Patricia Krenckel, Stephan Riepe, Jan Benick, Ralph Muller, Armin Richter, S W Glunz, Martin C Schubert
    Abstract:

    Abstract Multicrystalline (mc) n-type silicon has proven to be a suitable substrate for the fabrication of highly efficient mc-Si solar cells. In this paper, we elaborate the impact of base Material parameters on the efficiency potential of n-type mc-Si solar cells featuring a boron-diffused front side emitter and a full-area passivating rear contact (TOPCon). The Electrical Material quality can be significantly improved by replacing the standard crystallization process with a seed-assisted growth for crystallization of high-performance (HP) mc silicon. Using high-purity quartz crucibles or larger crucibles in combination with an optimization of the grain boundary area fraction with an adapted seed structure leads to further improvements of the Material quality in terms of charge carrier lifetimes. However, not only the charge carrier lifetime, but also the base resistivity is of crucial importance for the efficiency potential depending on the cell concept. Based on experimental data and simulations, we assess the optimal range for the base resistivity and the wafer thickness for n-type mc-Si TOPCon solar cells. With the optimal Material parameters, an “efficiency limiting bulk recombination analysis” (ELBA) reveals an efficiency potential in the range of 22.5% for n-type mc-Si TOPCon solar cells. Finally, we fabricated TOPCon solar cells based on optimized n-type HP mc-Si substrate and demonstrate a certified efficiency of 21.9%, which is the highest efficiency reported for multicrystalline silicon solar cells so far.

  • solar cell efficiency losses due to impurities from the crucible in multicrystalline silicon
    IEEE Journal of Photovoltaics, 2014
    Co-Authors: Florian Schindler, B Michl, Jonas Schon, Wolfram Kwapil, Wilhelm Warta, Martin C Schubert
    Abstract:

    The Electrical Material quality of multicrystalline (mc) silicon for photovoltaic applications suffers from crystal defects as well as from impurities that originate from the feedstock, the quartz crucible, and its coating. In this study, we investigate the influence of impurities from the crucible on efficiency losses in mc silicon solar cells, focusing on the limitation due to iron. The applicability of p-type mc silicon, crystallized in G1 sized crucibles of industrial Material quality and very pure Electrically fused silica, for a high-efficiency solar cell process is examined by measuring lifetime and interstitial iron concentration in the wafers after different processing steps and by estimating the cell efficiency potential from injection-dependent bulk lifetime measurements. Interstitial iron concentrations extracted from 2-D simulations of iron precipitation at crystal defects and gettering during processing agree well with Fei measurements at different process stages and explain the observations. Efficiency losses are quantified to losses due to segregated impurities diffused into the silicon melt, losses due to decorated crystal defects and losses due to solid-state diffusion into the crystal. By using a high-purity crucible, losses are reduced significantly and an efficiency gain of 0.5% absolute is estimated to be attainable on wafers with edge region.

S W Glunz - One of the best experts on this subject based on the ideXlab platform.

  • optimized multicrystalline silicon for solar cells enabling conversion efficiencies of 22
    Solar Energy Materials and Solar Cells, 2017
    Co-Authors: Florian Schindler, B Michl, Patricia Krenckel, Stephan Riepe, Jan Benick, Ralph Muller, Armin Richter, S W Glunz, Martin C Schubert
    Abstract:

    Abstract Multicrystalline (mc) n-type silicon has proven to be a suitable substrate for the fabrication of highly efficient mc-Si solar cells. In this paper, we elaborate the impact of base Material parameters on the efficiency potential of n-type mc-Si solar cells featuring a boron-diffused front side emitter and a full-area passivating rear contact (TOPCon). The Electrical Material quality can be significantly improved by replacing the standard crystallization process with a seed-assisted growth for crystallization of high-performance (HP) mc silicon. Using high-purity quartz crucibles or larger crucibles in combination with an optimization of the grain boundary area fraction with an adapted seed structure leads to further improvements of the Material quality in terms of charge carrier lifetimes. However, not only the charge carrier lifetime, but also the base resistivity is of crucial importance for the efficiency potential depending on the cell concept. Based on experimental data and simulations, we assess the optimal range for the base resistivity and the wafer thickness for n-type mc-Si TOPCon solar cells. With the optimal Material parameters, an “efficiency limiting bulk recombination analysis” (ELBA) reveals an efficiency potential in the range of 22.5% for n-type mc-Si TOPCon solar cells. Finally, we fabricated TOPCon solar cells based on optimized n-type HP mc-Si substrate and demonstrate a certified efficiency of 21.9%, which is the highest efficiency reported for multicrystalline silicon solar cells so far.