The Experts below are selected from a list of 297 Experts worldwide ranked by ideXlab platform
P.m. Asbeck - One of the best experts on this subject based on the ideXlab platform.
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determination of junction temperature in algaas gaas heterojunction bipolar transistors by Electrical Measurement
IEEE Transactions on Electron Devices, 1992Co-Authors: J.r. Waldrop, K.c. Wang, P.m. AsbeckAbstract:A method of measuring the junction temperature and associated thermal resistance of heterojunction bipolar transistors by using the temperature dependence of the DC gain is described. >
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Determination of junction temperature in AlGaAs/GaAs heterojunction bipolar transistors by Electrical Measurement
IEEE Transactions on Electron Devices, 1992Co-Authors: J.r. Waldrop, K.c. Wang, P.m. AsbeckAbstract:A method of measuring the junction temperature and associated thermal resistance of heterojunction bipolar transistors by using the temperature dependence of the DC gain is described.
J.r. Waldrop - One of the best experts on this subject based on the ideXlab platform.
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determination of junction temperature in algaas gaas heterojunction bipolar transistors by Electrical Measurement
IEEE Transactions on Electron Devices, 1992Co-Authors: J.r. Waldrop, K.c. Wang, P.m. AsbeckAbstract:A method of measuring the junction temperature and associated thermal resistance of heterojunction bipolar transistors by using the temperature dependence of the DC gain is described. >
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Determination of junction temperature in AlGaAs/GaAs heterojunction bipolar transistors by Electrical Measurement
IEEE Transactions on Electron Devices, 1992Co-Authors: J.r. Waldrop, K.c. Wang, P.m. AsbeckAbstract:A method of measuring the junction temperature and associated thermal resistance of heterojunction bipolar transistors by using the temperature dependence of the DC gain is described.
K.c. Wang - One of the best experts on this subject based on the ideXlab platform.
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determination of junction temperature in algaas gaas heterojunction bipolar transistors by Electrical Measurement
IEEE Transactions on Electron Devices, 1992Co-Authors: J.r. Waldrop, K.c. Wang, P.m. AsbeckAbstract:A method of measuring the junction temperature and associated thermal resistance of heterojunction bipolar transistors by using the temperature dependence of the DC gain is described. >
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Determination of junction temperature in AlGaAs/GaAs heterojunction bipolar transistors by Electrical Measurement
IEEE Transactions on Electron Devices, 1992Co-Authors: J.r. Waldrop, K.c. Wang, P.m. AsbeckAbstract:A method of measuring the junction temperature and associated thermal resistance of heterojunction bipolar transistors by using the temperature dependence of the DC gain is described.
P A Crowell - One of the best experts on this subject based on the ideXlab platform.
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Electrical Measurement of the spin Hall effects in Fe/InxGa1−xAs heterostructures
69th Device Research Conference, 2011Co-Authors: E S Garlid, Q O Hu, M K Chan, C. Geppert, C. J. Palmstrཨm, P A CrowellAbstract:There has been extensive theoretical discussion of the spin Hall effect (SHE) and the various ways that it could be exploited to generate or manipulate spin currents. However, only a handful of recent experiments have investigated this effect, and in semiconductor materials they have relied on optical techniques to either detect or generate spins.
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Electrical Measurement of the direct spin hall effect in fe inxga 1 x as heterostructures
Physical Review Letters, 2010Co-Authors: E S Garlid, Q O Hu, M K Chan, C J Palmstrom, P A CrowellAbstract:We report on an all-Electrical Measurement of the spin Hall effect in epitaxial Fe/In x Ga 1-x As heterostructures with n-type (Si) channel doping and highly doped Schottky tunnel barriers. A transverse spin current generated by an ordinary charge current flowing in the In x Ga 1-x As is detected by measuring the spin accumulation at the edges of the channel. The spin accumulation is identified through the observation of a Hanle effect in the voltage measured by pairs of ferromagnetic Hall contacts. We investigate the bias and temperature dependence of the resulting Hanle signal and determine the skew and side-jump contributions to the total spin Hall conductivity.
Jeffrey Fortin - One of the best experts on this subject based on the ideXlab platform.
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DEM ball bearing model and defect diagnosis by Electrical Measurement
Mechanical Systems and Signal Processing, 2013Co-Authors: K. Bourbatache, M. Guessasma, E. Bellenger, V. Bourny, Jeffrey FortinAbstract:We propose in this paper a new method for the monitoring and diagnosis of bearing defects which utilises the sensitivity and the richness of the local Electrical signature of the ball bearings. Experimental results show the capability of the Electrical Measurement to betray the existence of defect. A new model of ball bearing is presented based on Discrete Element Method (DEM), in which the mechanical behavior of ball bearing is reproduced correctly. Numerical simulations are carried out to highlight the influence of angular velocity on the Electrical signal of healthy ball bearing. Moreover, the numerical simulations are performed in the case of defected ball bearing. The Electrical signals obtained are in good agreement with theoretical frequencies. The numerical study underscore the capability of Electrical response to detect geometrical defects. © 2013 Elsevier Ltd.