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William P. King - One of the best experts on this subject based on the ideXlab platform.
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Electrical Noise characteristics of a doped silicon microcantilever heater thermometer
Applied Physics Letters, 2011Co-Authors: Elise A Corbin, William P. KingAbstract:We measure the Electrical Noise characteristics of doped silicon microcantilevers during cantilever self-heating over the temperature range 296–781 K. The dominant Noise source is 1/f below about 10 kHz, while at higher frequency, the dominant Noise source is Johnson Noise. The 1/f Noise matches the Hooge model. The Noise floor is about 10 nV/Hz1/2 and depends upon temperature, matching the theoretical Johnson Noise. The Johnson Noise-limited temperature resolution is about 1 μK/Hz1/2.
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Electrical Noise characteristics of a doped silicon microcantilever heater-thermometer
Proceedings of IEEE Sensors, 2010Co-Authors: Elise A Corbin, William P. KingAbstract:We report measurements of the electronic Noise characteristics of doped silicon microcantilever heater-thermometers. The Noise floor is measured over the range 1 Hz − 12 kHz while the cantilever is resistively heated over the temperature range of 297 – 615 K. At low frequency 1 / ƒ, or flicker, Noise is the dominant Noise type, while at high frequency the Johnson, or thermal, Noise dominates. The Johnson Noise floor is found to be less than 10 nV / Hz½, which corresponds to a cantilever temperature precision of about 2 – 30 µK / Hz½ over the temperature range measured. To our knowledge, this paper reports the first detailed measurements of Noise in a heated microcantilever sensor.
Elise A Corbin - One of the best experts on this subject based on the ideXlab platform.
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Electrical Noise characteristics of a doped silicon microcantilever heater thermometer
Applied Physics Letters, 2011Co-Authors: Elise A Corbin, William P. KingAbstract:We measure the Electrical Noise characteristics of doped silicon microcantilevers during cantilever self-heating over the temperature range 296–781 K. The dominant Noise source is 1/f below about 10 kHz, while at higher frequency, the dominant Noise source is Johnson Noise. The 1/f Noise matches the Hooge model. The Noise floor is about 10 nV/Hz1/2 and depends upon temperature, matching the theoretical Johnson Noise. The Johnson Noise-limited temperature resolution is about 1 μK/Hz1/2.
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Electrical Noise characteristics of a doped silicon microcantilever heater-thermometer
Proceedings of IEEE Sensors, 2010Co-Authors: Elise A Corbin, William P. KingAbstract:We report measurements of the electronic Noise characteristics of doped silicon microcantilever heater-thermometers. The Noise floor is measured over the range 1 Hz − 12 kHz while the cantilever is resistively heated over the temperature range of 297 – 615 K. At low frequency 1 / ƒ, or flicker, Noise is the dominant Noise type, while at high frequency the Johnson, or thermal, Noise dominates. The Johnson Noise floor is found to be less than 10 nV / Hz½, which corresponds to a cantilever temperature precision of about 2 – 30 µK / Hz½ over the temperature range measured. To our knowledge, this paper reports the first detailed measurements of Noise in a heated microcantilever sensor.
J P Pekola - One of the best experts on this subject based on the ideXlab platform.
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ultrasensitive proximity josephson sensor with kinetic inductance readout
Applied Physics Letters, 2008Co-Authors: Francesco Giazotto, Arttu Luukanen, Tero T Heikkila, G P Pepe, Panu Helisto, J P PekolaAbstract:We propose a mesoscopic kinetic-inductance radiation detector based on a long superconductor-normal metal-superconductor Josephson junction. The operation of this proximity Josephson sensor relies on large kinetic inductance variations under irradiation due to the exponential temperature dependence of the critical current. Coupled with a dc superconducting quantum interference device readout, the PJS is able to provide a signal to Noise (S/N) ratio up to ∼103 in the terahertz regime if operated as calorimeter, while Electrical Noise equivalent power as low as ∼7×10−20W∕Hz at 200mK can be achieved in the bolometer operation. The high performance together with the ease of fabrication make this structure attractive as an ultrasensitive cryogenic detector of terahertz electromagnetic radiation.
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ultrasensitive proximity josephson sensor with kinetic inductance read out
arXiv: Mesoscale and Nanoscale Physics, 2008Co-Authors: Francesco Giazotto, Arttu Luukanen, Tero T Heikkila, Panu Helisto, J P PekolaAbstract:We propose a mesoscopic kinetic-inductance radiation detector based on a long superconductor--normal metal--superconductor Josephson junction. The operation of this proximity Josephson sensor (PJS) relies on large kinetic inductance variations under irradiation due to the exponential temperature dependence of the critical current. Coupled with a dc SQUID readout, the PJS is able to provide a signal to Noise (S/N) ratio up to ~10^3 in the THz regime if operated as calorimeter, while Electrical Noise equivalent power (NEP) as low as ~7x10^{-20} W(Hz)^(-1/2) at 200 mK can be achieved in the bolometer operation. The high performance together with the ease of fabrication make this structure attractive as an ultrasensitive cryogenic detector of THz electromagnetic radiation.
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a superconducting antenna coupled hot spot microbolometer
Applied Physics Letters, 2003Co-Authors: Arttu Luukanen, J P PekolaAbstract:We report the Electrical properties of an antenna-coupled niobium vacuum-bridge bolometer, operated at a temperature of 4.2 K, in which the thermal isolation is maximized by the vacuum gap between the bridge and the underlying silicon substrate. The device is voltage-biased, which results in a formation of a normal state region in the middle of the bridge. The device shows a current responsivity of −1430 A/W and an amplifier limited Electrical Noise equivalent power of 1.4×10−14 W/Hz.
Phaedon Avouris - One of the best experts on this subject based on the ideXlab platform.
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strong suppression of Electrical Noise in bilayer graphene nanodevices
Nano Letters, 2008Co-Authors: Yuming Lin, Phaedon AvourisAbstract:Low-frequency 1/f Noise is ubiquitous and dominates the signal-to-Noise performance in nanodevices. Here we investigate the Noise characteristics of single-layer and bilayer graphene nanodevices and uncover an unexpected 1/f Noise behavior for bilayer devices. Graphene is a single layer of graphite, where carbon atoms form a two-dimensional (2D) honeycomb lattice. Despite the similar composition, bilayer graphene (two graphene monolayers stacked in the natural graphite order) is a distinct 2D system with a different band structure and Electrical properties. 1,2 In graphene monolayers, the 1/f Noise is found to follow Hooge’s empirical relation with a Noise parameter comparable to that of bulk semiconductors. However, this 1/f Noise is strongly suppressed in bilayer graphene devices and exhibits an unusual dependence on the carrier density, different from most other materials. The unexpected Noise behavior in graphene bilayers is associated with its unique band structure that varies with the charge distribution among the two layers, resulting in an effective screening of potential fluctuations due to external impurity charges. The findings here point to exciting opportunities for graphene bilayers in low-Noise applications.
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strong suppression of Electrical Noise in bilayer graphene nano devices
arXiv: Materials Science, 2008Co-Authors: Yuming Lin, Phaedon AvourisAbstract:Low-frequency 1/f Noise is ubiquitous, and dominates the signal-to-Noise performance in nanodevices. Here we investigate the Noise characteristics of single-layer and bilayer graphene nano-devices, and uncover an unexpected 1/f Noise behavior for bilayer devices. Graphene is a single layer of graphite, where carbon atoms form a 2D honeycomb lattice. Despite the similar composition, bilayer graphene (two graphene monolayers stacked in the natural graphite order) is a distinct 2D system with a different band structure and Electrical properties. In graphene monolayers, the 1/f Noise is found to follow Hooge's empirical relation with a Noise parameter comparable to that of bulk semiconductors. However, this 1/f Noise is strongly suppressed in bilayer graphene devices, and exhibits an unusual dependence on the carrier density, different from most other materials. The unexpected Noise behavior in graphene bilayers is associated with its unique band structure that varies with the charge distribution among the two layers, resulting in an effective screening of potential fluctuations due to external impurity charges. The findings here point to exciting opportunities for graphene bilayers in low-Noise applications.
Arttu Luukanen - One of the best experts on this subject based on the ideXlab platform.
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ultrasensitive proximity josephson sensor with kinetic inductance readout
Applied Physics Letters, 2008Co-Authors: Francesco Giazotto, Arttu Luukanen, Tero T Heikkila, G P Pepe, Panu Helisto, J P PekolaAbstract:We propose a mesoscopic kinetic-inductance radiation detector based on a long superconductor-normal metal-superconductor Josephson junction. The operation of this proximity Josephson sensor relies on large kinetic inductance variations under irradiation due to the exponential temperature dependence of the critical current. Coupled with a dc superconducting quantum interference device readout, the PJS is able to provide a signal to Noise (S/N) ratio up to ∼103 in the terahertz regime if operated as calorimeter, while Electrical Noise equivalent power as low as ∼7×10−20W∕Hz at 200mK can be achieved in the bolometer operation. The high performance together with the ease of fabrication make this structure attractive as an ultrasensitive cryogenic detector of terahertz electromagnetic radiation.
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ultrasensitive proximity josephson sensor with kinetic inductance read out
arXiv: Mesoscale and Nanoscale Physics, 2008Co-Authors: Francesco Giazotto, Arttu Luukanen, Tero T Heikkila, Panu Helisto, J P PekolaAbstract:We propose a mesoscopic kinetic-inductance radiation detector based on a long superconductor--normal metal--superconductor Josephson junction. The operation of this proximity Josephson sensor (PJS) relies on large kinetic inductance variations under irradiation due to the exponential temperature dependence of the critical current. Coupled with a dc SQUID readout, the PJS is able to provide a signal to Noise (S/N) ratio up to ~10^3 in the THz regime if operated as calorimeter, while Electrical Noise equivalent power (NEP) as low as ~7x10^{-20} W(Hz)^(-1/2) at 200 mK can be achieved in the bolometer operation. The high performance together with the ease of fabrication make this structure attractive as an ultrasensitive cryogenic detector of THz electromagnetic radiation.
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an ultra low Noise superconducting antenna coupled microbolometer with a room temperature read out
IEEE Microwave and Wireless Components Letters, 2006Co-Authors: Arttu Luukanen, Erich N Grossman, Aaron J Miller, P Helisto, J S Penttila, Hannu Sipola, H SeppaAbstract:In this letter, we report the Electrical and optical characteristics of a superconducting vacuum-bridge microbolometer with an Electrical Noise equivalent power of 26fW radicHz and an effective time constant of 380 ns, when operated at a bath temperature of 4K. We employ a novel room temperature external negative feedback readout architecture, that allows for Noise matching to the device without bulky stepup transformers or cooled electronics. Both the detector and the readout lend themselves to be scaled to imaging arrays. The directly measured Noise equivalent temperature difference over a 100-1000-GHz bandwidth is 125 mK in a 30-ms integration time
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a superconducting antenna coupled hot spot microbolometer
Applied Physics Letters, 2003Co-Authors: Arttu Luukanen, J P PekolaAbstract:We report the Electrical properties of an antenna-coupled niobium vacuum-bridge bolometer, operated at a temperature of 4.2 K, in which the thermal isolation is maximized by the vacuum gap between the bridge and the underlying silicon substrate. The device is voltage-biased, which results in a formation of a normal state region in the middle of the bridge. The device shows a current responsivity of −1430 A/W and an amplifier limited Electrical Noise equivalent power of 1.4×10−14 W/Hz.