The Experts below are selected from a list of 360 Experts worldwide ranked by ideXlab platform
Jong-wan Park - One of the best experts on this subject based on the ideXlab platform.
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influence of molybdenum source drain Electrode Contact resistance in amorphous zinc tin oxide a zto thin film transistors
Materials Research Bulletin, 2014Co-Authors: Dongsuk Han, Yu-jin Kang, Jae-hyung Park, Hyung-tag Jeon, Jong-wan ParkAbstract:Highlights: • We developed and investigated source/drain Electrodes in oxide TFTs. • The Mo S/D Electrodes showed good output characteristics. • Intrinsic TFT parameters were calculated by the transmission line method. - Abstract: This paper investigates the feasibility of a low-resistivity Electrode material (Mo) for source/drain (S/D) Electrodes in thin film transistors (TFTs). The effective resistances between Mo source/drain Electrodes and amorphous zinc–tin-oxide (a-ZTO) thin film transistors were studied. Intrinsic TFT parameters were calculated by the transmission line method (TLM) using a series of TFTs with different channel lengths measured at a low source/drain voltage. The TFTs fabricated with Mo source/drain Electrodes showed good transfer characteristics with a field-effect mobility of 10.23 cm{sup 2}/V s. In spite of slight current crowding effects, the Mo source/drain Electrodes showed good output characteristics with a steep rise in the low drain-to-source voltage (V{sub DS}) region.
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copper source drain Electrode Contact resistance effects in amorphous indium gallium zinc oxide thin film transistors
Physica Status Solidi-rapid Research Letters, 2009Co-Authors: Woong-sun Kim, Yeon-keon Moon, Sih Lee, Byung-woo Kang, Tae-seok Kwon, Kyung-taek Kim, Jong-wan ParkAbstract:This paper focuses on the viability of low-resistivity Electrode material (Cu) for source/drain Electrodes in thin film transistors (TFTs). The effective resistances between Cu source/drain Electrodes and amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors were examined. Intrinsic TFT parameters were extracted by the transmission line method (TLM) using a series of TFTs with different channel lengths measured at a low source/drain voltage. The TFTs fabricated with Cu source/drain Electrodes showed good transfer characteristics with a field-effect mobility of 9.64 cm2/Vs, and good output characteristics with steep rise in the low VDS region. (© 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
Dongsuk Han - One of the best experts on this subject based on the ideXlab platform.
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influence of molybdenum source drain Electrode Contact resistance in amorphous zinc tin oxide a zto thin film transistors
Materials Research Bulletin, 2014Co-Authors: Dongsuk Han, Yu-jin Kang, Jae-hyung Park, Hyung-tag Jeon, Jong-wan ParkAbstract:Highlights: • We developed and investigated source/drain Electrodes in oxide TFTs. • The Mo S/D Electrodes showed good output characteristics. • Intrinsic TFT parameters were calculated by the transmission line method. - Abstract: This paper investigates the feasibility of a low-resistivity Electrode material (Mo) for source/drain (S/D) Electrodes in thin film transistors (TFTs). The effective resistances between Mo source/drain Electrodes and amorphous zinc–tin-oxide (a-ZTO) thin film transistors were studied. Intrinsic TFT parameters were calculated by the transmission line method (TLM) using a series of TFTs with different channel lengths measured at a low source/drain voltage. The TFTs fabricated with Mo source/drain Electrodes showed good transfer characteristics with a field-effect mobility of 10.23 cm{sup 2}/V s. In spite of slight current crowding effects, the Mo source/drain Electrodes showed good output characteristics with a steep rise in the low drain-to-source voltage (V{sub DS}) region.
Woong-sun Kim - One of the best experts on this subject based on the ideXlab platform.
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copper source drain Electrode Contact resistance effects in amorphous indium gallium zinc oxide thin film transistors
Physica Status Solidi-rapid Research Letters, 2009Co-Authors: Woong-sun Kim, Yeon-keon Moon, Sih Lee, Byung-woo Kang, Tae-seok Kwon, Kyung-taek Kim, Jong-wan ParkAbstract:This paper focuses on the viability of low-resistivity Electrode material (Cu) for source/drain Electrodes in thin film transistors (TFTs). The effective resistances between Cu source/drain Electrodes and amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors were examined. Intrinsic TFT parameters were extracted by the transmission line method (TLM) using a series of TFTs with different channel lengths measured at a low source/drain voltage. The TFTs fabricated with Cu source/drain Electrodes showed good transfer characteristics with a field-effect mobility of 9.64 cm2/Vs, and good output characteristics with steep rise in the low VDS region. (© 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
Lyndon J Brown - One of the best experts on this subject based on the ideXlab platform.
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experimental simulation of surface pitting of degraded Electrodes in resistance spot welding of aluminium alloys
Materials Science and Technology, 2004Co-Authors: Y Zhou, S Fukumoto, J Peng, Lyndon J BrownAbstract:AbstractA novel experimental technique, using specially designed Electrodes (with machined annular and circular pits, and central cavities), was developed to simulate the effects of pitting morphology of the Electrode tip face on weld nugget size and joint strength in resistance spot welding of aluminium alloys. Results of the experimental simulations indicate that the distribution of Electrode Contact areas and their alignment between top and bottom Electrodes both affect weld quality. A complete understanding of the correlation between tip face features and weld nugget formation would require three-dimensional numerical modelling; this work has provided well organised experimental data in support of future modelling work.
Max A Viergever - One of the best experts on this subject based on the ideXlab platform.
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automatic localization of cochlear implant Electrode Contacts in ct
Ear and Hearing, 2017Co-Authors: Edwin Bennink, Jeroen P M Peters, Anne W Wendrich, Evert Jan Vonken, Gijsbert A Van Zanten, Max A ViergeverAbstract:OBJECTIVES:: Determining the exact location of cochlear implant (CI) Electrode Contacts after implantation is important, as it helps quantifying the relation between CI positioning and hearing outcome. Unfortunately, localization of individual Contacts can be difficult, because the spacing between the Electrode Contacts is near the spatial resolution limit of high-resolution clinical computed tomography (CT) scanners. This study introduces and examines a simple, automatic method for the localization of intracochlear Electrode Contacts. CI geometric specifications may provide the prior knowledge that is essential to accurately estimate Contact positions, even though individual Contacts may not be visibly resolved. DESIGN:: The prior knowledge in CI geometry is used to accurately estimate intracochlear Electrode Contact positions in high-resolution CT scans of seven adult patients implanted with a CI (Cochlear Ltd.). The automatically detected Electrode Contact locations were verified against locations marked by two experienced observers. The interobserver errors and the errors between the averaged locations and the automatically detected locations were calculated. The estimated Contact positions were transformed to a cylindrical cochlear coordinate system, according to an international consensus, in which the insertion angles and the radius and elevation were measured. RESULTS:: The linear correlation of the automatically detected Electrode Contact positions with the manually detected locations was high (R = 0.98 for the radius, and R = 1.00 for the insertion angle). The errors in radius and in insertion angle between the automatically detected locations and the manually detected locations were 0.12 mm and 1.7°. These errors were comparable to the interobserver errors. Geometrical measurements were in line with what is usually found in human cochleae. The mean insertion angle of the most apical Electrode was 410° (range: 316° to 503°). The mean radius of the Electrode Contacts in the first turn of the cochlear spiral was 3.0 mm, and the mean radius of the remainder in the second turn was 1.7 mm. CONCLUSIONS:: With implant geometry as prior knowledge, automatic analysis of high-resolution CT scans enables accurate localization of CI Electrode Contacts. The output of this method can be used to study the effect of CI positioning on hearing outcomes in more detail.