The Experts below are selected from a list of 33705 Experts worldwide ranked by ideXlab platform

Junji Kido - One of the best experts on this subject based on the ideXlab platform.

Kazumi Matsushige - One of the best experts on this subject based on the ideXlab platform.

  • enhanced performance of organic light Emitting Device by insertion of conducting insulating wo3 anodic buffer layer
    Synthetic Metals, 2005
    Co-Authors: Jingze Li, Masayuki Yahiro, Kenji Ishida, Hirofumi Yamada, Kazumi Matsushige
    Abstract:

    Abstract Tungsten oxide (WO3) ultrathin film with high optical transparency is deposited on indium–tin oxide glass as hole injection layer of organic light Emitting Device (OLED). As-deposited WO3 film is amorphous and insulating, wherein the buffer thickness of 0.5 nm shows enhancement of hole injection in OLED. The Device performance is further enhanced after the as-deposited WO3 film is thermally treated, which is ascribed to lowering of the effective energy barrier height for hole injection. The annealed buffer layer is identified to be a semiconductor with crystalline structure. Although the thickness of the annealed WO3 buffer layer is up to 1.5 nm, the Device performance is still better than that of unmodified OLED. The difference in anodic buffer thickness dependent Device performance for both types of WO3 films is determined by the electrical property.

  • enhanced performance of organic light Emitting Device by insertion of conducting insulating wo3 anodic buffer layer
    Synthetic Metals, 2005
    Co-Authors: Masayuki Yahiro, Kenji Ishida, Hirofumi Yamada, Kazumi Matsushige
    Abstract:

    Abstract Tungsten oxide (WO3) ultrathin film with high optical transparency is deposited on indium–tin oxide glass as hole injection layer of organic light Emitting Device (OLED). As-deposited WO3 film is amorphous and insulating, wherein the buffer thickness of 0.5 nm shows enhancement of hole injection in OLED. The Device performance is further enhanced after the as-deposited WO3 film is thermally treated, which is ascribed to lowering of the effective energy barrier height for hole injection. The annealed buffer layer is identified to be a semiconductor with crystalline structure. Although the thickness of the annealed WO3 buffer layer is up to 1.5 nm, the Device performance is still better than that of unmodified OLED. The difference in anodic buffer thickness dependent Device performance for both types of WO3 films is determined by the electrical property.

Xiaohong Zhang - One of the best experts on this subject based on the ideXlab platform.

Vladimir Bulovic - One of the best experts on this subject based on the ideXlab platform.

  • air stable operation of transparent colloidal quantum dot based leds with a unipolar Device architecture
    Nano Letters, 2010
    Co-Authors: Vanessa Wood, Moungi G Bawendi, Matthew J Panzer, Jeanmichel Caruge, Jonathan E Halpert, Vladimir Bulovic
    Abstract:

    We report a novel unipolar light-Emitting Device architecture that operates using direct-current, field-driven electroluminescence of colloidally synthesized quantum dots (QDs). This Device architecture, which is based only on transparent ceramics and QDs, enables emission from different color QDs and, for the first time, constant QD electroluminescence during extended operation in air, unpackaged.

  • a surface Emitting vacuum deposited organic light Emitting Device
    Applied Physics Letters, 1997
    Co-Authors: Vladimir Bulovic, Stephen R Forrest, Peifang Tian, P E Burrows, M R Gokhale, Mark E Thompson
    Abstract:

    We demonstrate a vacuum-deposited organic light Emitting Device which emits from its top surface through a transparent indium-tin-oxide anode. This Device employs a novel protective cap layer which prevents damage to the organic layers during sputter deposition of the anode, while also improving hole injection. Mechanisms of current transport and carrier injection from the contacts are investigated. This Device configuration allows for integration of organic light Emitting Devices with n-channel field effect transistors used in display active matrix backplanes.

Mark E Thompson - One of the best experts on this subject based on the ideXlab platform.

  • a surface Emitting vacuum deposited organic light Emitting Device
    Applied Physics Letters, 1997
    Co-Authors: Vladimir Bulovic, Stephen R Forrest, Peifang Tian, P E Burrows, M R Gokhale, Mark E Thompson
    Abstract:

    We demonstrate a vacuum-deposited organic light Emitting Device which emits from its top surface through a transparent indium-tin-oxide anode. This Device employs a novel protective cap layer which prevents damage to the organic layers during sputter deposition of the anode, while also improving hole injection. Mechanisms of current transport and carrier injection from the contacts are investigated. This Device configuration allows for integration of organic light Emitting Devices with n-channel field effect transistors used in display active matrix backplanes.