The Experts below are selected from a list of 288 Experts worldwide ranked by ideXlab platform
Sunwoong Choi - One of the best experts on this subject based on the ideXlab platform.
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amorphous ingazno thin film transistors part ii modeling and simulation of negative bias illumination stress induced instability
IEEE Transactions on Electron Devices, 2012Co-Authors: Hyun Kwang Jeong, Dongsik Kong, Sunwoong ChoiAbstract:Based on the physical model of amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs) and the extracted density of states described in Part I, a quantitative investigation of mechanisms on the negative bias illumination stress (NBIS)-induced threshold voltage VT instability of a-IGZO TFTs is presented. It is found that the shallow donor state-creation model explains the NBIS time evolution of the electrical characteristics very well. Furthermore, the semi-Empirical Rule of the NBIS-induced ΔVT is proposed and demonstrated based on the shallow donor state-creation model. The proposed approach can be used to optimize the fabrication process and to explore high-performance thin-film materials for mass-production-level amorphous oxide semiconductor TFTs to be innovatively used in the near future.
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Amorphous InGaZnO Thin-Film Transistors—Part II: Modeling and Simulation of Negative Bias Illumination Stress-Induced Instability
IEEE Transactions on Electron Devices, 2012Co-Authors: Hyun Kwang Jeong, Dongsik Kong, Sunwoong ChoiAbstract:Based on the physical model of amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs) and the extracted density of states described in Part I, a quantitative investigation of mechanisms on the negative bias illumination stress (NBIS)-induced threshold voltage VT instability of a-IGZO TFTs is presented. It is found that the shallow donor state-creation model explains the NBIS time evolution of the electrical characteristics very well. Furthermore, the semi-Empirical Rule of the NBIS-induced ΔVT is proposed and demonstrated based on the shallow donor state-creation model. The proposed approach can be used to optimize the fabrication process and to explore high-performance thin-film materials for mass-production-level amorphous oxide semiconductor TFTs to be innovatively used in the near future.
Hyun Kwang Jeong - One of the best experts on this subject based on the ideXlab platform.
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amorphous ingazno thin film transistors part ii modeling and simulation of negative bias illumination stress induced instability
IEEE Transactions on Electron Devices, 2012Co-Authors: Hyun Kwang Jeong, Dongsik Kong, Sunwoong ChoiAbstract:Based on the physical model of amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs) and the extracted density of states described in Part I, a quantitative investigation of mechanisms on the negative bias illumination stress (NBIS)-induced threshold voltage VT instability of a-IGZO TFTs is presented. It is found that the shallow donor state-creation model explains the NBIS time evolution of the electrical characteristics very well. Furthermore, the semi-Empirical Rule of the NBIS-induced ΔVT is proposed and demonstrated based on the shallow donor state-creation model. The proposed approach can be used to optimize the fabrication process and to explore high-performance thin-film materials for mass-production-level amorphous oxide semiconductor TFTs to be innovatively used in the near future.
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Amorphous InGaZnO Thin-Film Transistors—Part II: Modeling and Simulation of Negative Bias Illumination Stress-Induced Instability
IEEE Transactions on Electron Devices, 2012Co-Authors: Hyun Kwang Jeong, Dongsik Kong, Sunwoong ChoiAbstract:Based on the physical model of amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs) and the extracted density of states described in Part I, a quantitative investigation of mechanisms on the negative bias illumination stress (NBIS)-induced threshold voltage VT instability of a-IGZO TFTs is presented. It is found that the shallow donor state-creation model explains the NBIS time evolution of the electrical characteristics very well. Furthermore, the semi-Empirical Rule of the NBIS-induced ΔVT is proposed and demonstrated based on the shallow donor state-creation model. The proposed approach can be used to optimize the fabrication process and to explore high-performance thin-film materials for mass-production-level amorphous oxide semiconductor TFTs to be innovatively used in the near future.
Dongsik Kong - One of the best experts on this subject based on the ideXlab platform.
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amorphous ingazno thin film transistors part ii modeling and simulation of negative bias illumination stress induced instability
IEEE Transactions on Electron Devices, 2012Co-Authors: Hyun Kwang Jeong, Dongsik Kong, Sunwoong ChoiAbstract:Based on the physical model of amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs) and the extracted density of states described in Part I, a quantitative investigation of mechanisms on the negative bias illumination stress (NBIS)-induced threshold voltage VT instability of a-IGZO TFTs is presented. It is found that the shallow donor state-creation model explains the NBIS time evolution of the electrical characteristics very well. Furthermore, the semi-Empirical Rule of the NBIS-induced ΔVT is proposed and demonstrated based on the shallow donor state-creation model. The proposed approach can be used to optimize the fabrication process and to explore high-performance thin-film materials for mass-production-level amorphous oxide semiconductor TFTs to be innovatively used in the near future.
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Amorphous InGaZnO Thin-Film Transistors—Part II: Modeling and Simulation of Negative Bias Illumination Stress-Induced Instability
IEEE Transactions on Electron Devices, 2012Co-Authors: Hyun Kwang Jeong, Dongsik Kong, Sunwoong ChoiAbstract:Based on the physical model of amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs) and the extracted density of states described in Part I, a quantitative investigation of mechanisms on the negative bias illumination stress (NBIS)-induced threshold voltage VT instability of a-IGZO TFTs is presented. It is found that the shallow donor state-creation model explains the NBIS time evolution of the electrical characteristics very well. Furthermore, the semi-Empirical Rule of the NBIS-induced ΔVT is proposed and demonstrated based on the shallow donor state-creation model. The proposed approach can be used to optimize the fabrication process and to explore high-performance thin-film materials for mass-production-level amorphous oxide semiconductor TFTs to be innovatively used in the near future.
E Garmire - One of the best experts on this subject based on the ideXlab platform.
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an Empirical Rule for band offsets between iii v alloy compounds
Journal of Applied Physics, 1993Co-Authors: A Ichii, Y Tsou, E GarmireAbstract:We present a method to Empirically predict relative valence band positions of III‐V semiconductor alloys. The method has been successfully applied to all the experimental data measured to date by the capacitance‐voltage profiling technique.
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An Empirical Rule for band offsets between III‐V alloy compounds
Journal of Applied Physics, 1993Co-Authors: A Ichii, Y Tsou, E GarmireAbstract:We present a method to Empirically predict relative valence band positions of III‐V semiconductor alloys. The method has been successfully applied to all the experimental data measured to date by the capacitance‐voltage profiling technique.
Cemal Kaya - One of the best experts on this subject based on the ideXlab platform.
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Theoretical insight into an Empirical Rule about organic corrosion inhibitors containing nitrogen, oxygen, and sulfur atoms
Applied Surface Science, 2017Co-Authors: Ime B. Obot, Xingwen Zheng, Xun Shen, Y. Qiang, Savaş Kaya, Cemal KayaAbstract:Steel is an important material in industry. Adding heterocyclic organic compounds have proved to be very efficient for steel protection. There exists an Empirical Rule that the general trend in the inhibition efficiencies of molecules containing heteroatoms is such that O
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theoretical insight into an Empirical Rule about organic corrosion inhibitors containing nitrogen oxygen and sulfur atoms
Applied Surface Science, 2017Co-Authors: Ime B. Obot, Xingwen Zheng, Xun Shen, Y. Qiang, Savaş Kaya, Cemal KayaAbstract:Steel is an important material in industry. Adding heterocyclic organic compounds have proved to be very efficient for steel protection. There exists an Empirical Rule that the general trend in the inhibition efficiencies of molecules containing heteroatoms is such that O < N < S. However, an atomic-level insight into the inhibition mechanism is still lacked. Thus, in this work, density functional theory calculations was used to investigate the adsorption of three typical heterocyclic molecules, i.e., pyrrole, furan, and thiophene, on Fe(110) surface. The approach is illustrated by carrying out geometric optimization of inhibitors on the stable and most exposed plane of α-Fe. Some salient features such as charge density difference, changes of work function, density of states were detailedly described. The present study is helpful to understand the afore-mentioned experiment Rule.