The Experts below are selected from a list of 321 Experts worldwide ranked by ideXlab platform
Philippe Galy - One of the best experts on this subject based on the ideXlab platform.
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Novel Ultrathin FD-SOI BiMOS Device With Reconfigurable Operation
IEEE Transactions on Electron Devices, 2017Co-Authors: Sotirios Athanasiou, Charles-alexandre Legrand, Sorin Cristoloveanu, Philippe GalyAbstract:Ultrathin bipolar + MOS (BiMOS) transistors were fabricated with 28-nm Ultra Thin Body and Buried oxide (UTBB) FD-SOI high-k metal gate technology for the first time. We evaluate the device behavior through dc/transmission line pulse measurements and 3-D TCAD simulations. The BiMOS demonstrates excellent MOS and hybrid behavior, with base as potential reference, exhibiting modulated apparent gain β A (~7 × 10 7 for the smallest base width) that can be controlled by the front and/or back gates. The mechanism of operation and further device optimizations are discussed. In addition, the device can work in four-gate FET mode with the two lateral junctions controlling the channel formation. For electrostatic discharge applications, triggering voltage V t1 and leakage current can be modulated with an External Resistor in two-terminal mode without requiring any External biasing.
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novel ultrathin fd soi bimos device with reconfigurable operation
IEEE Transactions on Electron Devices, 2017Co-Authors: Sotirios Athanasiou, Charles-alexandre Legrand, Sorin Cristoloveanu, Philippe GalyAbstract:Ultrathin bipolar + MOS (BiMOS) transistors were fabricated with 28-nm Ultra Thin Body and Buried oxide (UTBB) FD-SOI high-k metal gate technology for the first time. We evaluate the device behavior through dc/transmission line pulse measurements and 3-D TCAD simulations. The BiMOS demonstrates excellent MOS and hybrid behavior, with base as potential reference, exhibiting modulated apparent gain ${\beta }_{A}$ ( $\sim {7} \times {10}^{{7}}$ for the smallest base width) that can be controlled by the front and/or back gates. The mechanism of operation and further device optimizations are discussed. In addition, the device can work in four-gate FET mode with the two lateral junctions controlling the channel formation. For electrostatic discharge applications, triggering voltage ${V}_{t{1}}$ and leakage current can be modulated with an External Resistor in two-terminal mode without requiring any External biasing.
Sotirios Athanasiou - One of the best experts on this subject based on the ideXlab platform.
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Novel Ultrathin FD-SOI BiMOS Device With Reconfigurable Operation
IEEE Transactions on Electron Devices, 2017Co-Authors: Sotirios Athanasiou, Charles-alexandre Legrand, Sorin Cristoloveanu, Philippe GalyAbstract:Ultrathin bipolar + MOS (BiMOS) transistors were fabricated with 28-nm Ultra Thin Body and Buried oxide (UTBB) FD-SOI high-k metal gate technology for the first time. We evaluate the device behavior through dc/transmission line pulse measurements and 3-D TCAD simulations. The BiMOS demonstrates excellent MOS and hybrid behavior, with base as potential reference, exhibiting modulated apparent gain β A (~7 × 10 7 for the smallest base width) that can be controlled by the front and/or back gates. The mechanism of operation and further device optimizations are discussed. In addition, the device can work in four-gate FET mode with the two lateral junctions controlling the channel formation. For electrostatic discharge applications, triggering voltage V t1 and leakage current can be modulated with an External Resistor in two-terminal mode without requiring any External biasing.
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novel ultrathin fd soi bimos device with reconfigurable operation
IEEE Transactions on Electron Devices, 2017Co-Authors: Sotirios Athanasiou, Charles-alexandre Legrand, Sorin Cristoloveanu, Philippe GalyAbstract:Ultrathin bipolar + MOS (BiMOS) transistors were fabricated with 28-nm Ultra Thin Body and Buried oxide (UTBB) FD-SOI high-k metal gate technology for the first time. We evaluate the device behavior through dc/transmission line pulse measurements and 3-D TCAD simulations. The BiMOS demonstrates excellent MOS and hybrid behavior, with base as potential reference, exhibiting modulated apparent gain ${\beta }_{A}$ ( $\sim {7} \times {10}^{{7}}$ for the smallest base width) that can be controlled by the front and/or back gates. The mechanism of operation and further device optimizations are discussed. In addition, the device can work in four-gate FET mode with the two lateral junctions controlling the channel formation. For electrostatic discharge applications, triggering voltage ${V}_{t{1}}$ and leakage current can be modulated with an External Resistor in two-terminal mode without requiring any External biasing.
Sorin Cristoloveanu - One of the best experts on this subject based on the ideXlab platform.
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Novel Ultrathin FD-SOI BiMOS Device With Reconfigurable Operation
IEEE Transactions on Electron Devices, 2017Co-Authors: Sotirios Athanasiou, Charles-alexandre Legrand, Sorin Cristoloveanu, Philippe GalyAbstract:Ultrathin bipolar + MOS (BiMOS) transistors were fabricated with 28-nm Ultra Thin Body and Buried oxide (UTBB) FD-SOI high-k metal gate technology for the first time. We evaluate the device behavior through dc/transmission line pulse measurements and 3-D TCAD simulations. The BiMOS demonstrates excellent MOS and hybrid behavior, with base as potential reference, exhibiting modulated apparent gain β A (~7 × 10 7 for the smallest base width) that can be controlled by the front and/or back gates. The mechanism of operation and further device optimizations are discussed. In addition, the device can work in four-gate FET mode with the two lateral junctions controlling the channel formation. For electrostatic discharge applications, triggering voltage V t1 and leakage current can be modulated with an External Resistor in two-terminal mode without requiring any External biasing.
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novel ultrathin fd soi bimos device with reconfigurable operation
IEEE Transactions on Electron Devices, 2017Co-Authors: Sotirios Athanasiou, Charles-alexandre Legrand, Sorin Cristoloveanu, Philippe GalyAbstract:Ultrathin bipolar + MOS (BiMOS) transistors were fabricated with 28-nm Ultra Thin Body and Buried oxide (UTBB) FD-SOI high-k metal gate technology for the first time. We evaluate the device behavior through dc/transmission line pulse measurements and 3-D TCAD simulations. The BiMOS demonstrates excellent MOS and hybrid behavior, with base as potential reference, exhibiting modulated apparent gain ${\beta }_{A}$ ( $\sim {7} \times {10}^{{7}}$ for the smallest base width) that can be controlled by the front and/or back gates. The mechanism of operation and further device optimizations are discussed. In addition, the device can work in four-gate FET mode with the two lateral junctions controlling the channel formation. For electrostatic discharge applications, triggering voltage ${V}_{t{1}}$ and leakage current can be modulated with an External Resistor in two-terminal mode without requiring any External biasing.
Charles-alexandre Legrand - One of the best experts on this subject based on the ideXlab platform.
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Novel Ultrathin FD-SOI BiMOS Device With Reconfigurable Operation
IEEE Transactions on Electron Devices, 2017Co-Authors: Sotirios Athanasiou, Charles-alexandre Legrand, Sorin Cristoloveanu, Philippe GalyAbstract:Ultrathin bipolar + MOS (BiMOS) transistors were fabricated with 28-nm Ultra Thin Body and Buried oxide (UTBB) FD-SOI high-k metal gate technology for the first time. We evaluate the device behavior through dc/transmission line pulse measurements and 3-D TCAD simulations. The BiMOS demonstrates excellent MOS and hybrid behavior, with base as potential reference, exhibiting modulated apparent gain β A (~7 × 10 7 for the smallest base width) that can be controlled by the front and/or back gates. The mechanism of operation and further device optimizations are discussed. In addition, the device can work in four-gate FET mode with the two lateral junctions controlling the channel formation. For electrostatic discharge applications, triggering voltage V t1 and leakage current can be modulated with an External Resistor in two-terminal mode without requiring any External biasing.
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novel ultrathin fd soi bimos device with reconfigurable operation
IEEE Transactions on Electron Devices, 2017Co-Authors: Sotirios Athanasiou, Charles-alexandre Legrand, Sorin Cristoloveanu, Philippe GalyAbstract:Ultrathin bipolar + MOS (BiMOS) transistors were fabricated with 28-nm Ultra Thin Body and Buried oxide (UTBB) FD-SOI high-k metal gate technology for the first time. We evaluate the device behavior through dc/transmission line pulse measurements and 3-D TCAD simulations. The BiMOS demonstrates excellent MOS and hybrid behavior, with base as potential reference, exhibiting modulated apparent gain ${\beta }_{A}$ ( $\sim {7} \times {10}^{{7}}$ for the smallest base width) that can be controlled by the front and/or back gates. The mechanism of operation and further device optimizations are discussed. In addition, the device can work in four-gate FET mode with the two lateral junctions controlling the channel formation. For electrostatic discharge applications, triggering voltage ${V}_{t{1}}$ and leakage current can be modulated with an External Resistor in two-terminal mode without requiring any External biasing.
Montree Siripruchyanun - One of the best experts on this subject based on the ideXlab platform.
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a synthesis of electronically controllable current mode pi pd and pid controllers employing cccdbas
Circuits and Systems, 2013Co-Authors: Somchai Srisakultiew, Montree SiripruchyanunAbstract:This paper presents a synthesis of current-mode PI, PD and PID controllers employing current controlled current differential buffer amplifiers (CCCDBAs). The features of these controllers are that: the output parameters can be electronically/independently controlled by adjusting corresponding bias currents in the proportional, integral, and deviation controllers; circuit description of the PID controller is simply formulated, it consists of four CCCDBAs cooperating with two grounded capacitors, and PI and PD controllers are composed of three CCCCDBAs and a grounded capacitor. Without any External Resistor, the proposed circuits are very suitable to develop into integrated circuit architecture. The given results from the PSpice simulation agree well with the theoretical anticipation. The approximate power consumption in a closed loop control system consisting of the PI, PD and PID controller with low-pass filter passive plant are 4.03 mW, 4.85 mW and 5.71 mW, respectively, at ±1.5 V power supply voltages.
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a current mode electronically controllable multifunction biquadratic filter using ccciis
International Journal of Advances in Telecommunications Electrotechnics Signals and Systems, 2013Co-Authors: Montree Siripruchyanun, Somchai Srisakultiew, Supawat LawanwisutAbstract:This article presents a current-mode multifunction biquadratic filter performing completely standard functions low-pass, high-pass, band-pass, band-reject and all-pass functions. The circuit principle is based on second-generation current-controlled current conveyor (CCCII) with three input terminals and one output terminal. The features of the circuit are that, the pole frequency can be electronically tuned via the input bias currents. The circuit topology is very simple, consisting of merely 2 CCCIIs and 2 grounded capacitors. Without any External Resistor and using only grounded elements, the proposed circuit is very comfortable to further develop into an integrated circuit architecture. The PSpice simulation results are shown. The given results agree well with the theoretical anticipation. The total power consumption is approximately 1.87mW at ±1.5V power supply voltages.
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A fully electronically controllable current-mode derivative PWM signal generator employing MO-CTTAs
2010Co-Authors: Jongcharoen Kumbun, Phamorn Silapan, Montree SiripruchyanunAbstract:This article presents a new current-mode derivative PWM signal generator based on MO-CTTAs (Multiple output current through transconductance amplifiers). The circuit description is very simple, its construction consists of 2 MO-CTTAs and 1 grounded capacitor without any External Resistor. The output frequency and amplitude can be independently and electronically adjusted. With mentioned features, it is very suitable to realize in a monolithic chip. The PSPICE simulation results are depicted, and agree well with the theoretical anticipation. The maximum power consumption is approximately 5.73mW at ±1.5V power supply.
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MO-CTTA-based Electronically Controlled Current- mode Square/Triangular Wave Generator
2010Co-Authors: Montree SiripruchyanunAbstract:A new current-mode square/triangular wave generator based on MO-CTTAs (Multiple output current through transconductance amplifiers) is presented in this paper. The circuit description is very simple, its construction consists of 2 MO-CTTAs and 1 grounded capacitor without any External Resistor. The output frequency and amplitude can be independently and electronically adjusted. With mentioned features, it is very suitable to realize in a monolithic chip. The PSPICE simulation results are depicted, and agree well with the theoretical anticipation. The maximum power consumption is approximately 3.27mW at ±1.5V power supply.
