The Experts below are selected from a list of 291 Experts worldwide ranked by ideXlab platform
Y K Allen - One of the best experts on this subject based on the ideXlab platform.
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33 ghz monolithic cascode alinas gainas heterojunction bipolar transistor Feedback Amplifier
IEEE Journal of Solid-state Circuits, 1991Co-Authors: M J W Rodwell, J F Jensen, W E Stanchina, R A Metzger, D B Rensch, M W Pierce, T V Kargodorian, Y K AllenAbstract:Microwave cascode Feedback Amplifiers with 8.6-dB gain and DC to 33-GHz bandwidth were developed. The Amplifiers utilize AlIn-As/GaInAs heterojunction bipolar transistors having f/sub max/=70 GHz and f/sub tau /=90 GHz. Because of the significant collector-base Feedback time constant the cascode configuration provides a large improvement in Amplifier bandwidth, but a low-impedance bias node must be provided for the common-base transistor. An active bias network was thus used which eliminates the need for on-wafer Si/sub 3/N/sub 4/ bypass capacitors. >
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33 ghz monolithic cascode alinas gainas heterojunction bipolar transistor Feedback Amplifier
Bipolar Circuits and Technology Meeting, 1990Co-Authors: M J W Rodwell, J F Jensen, W E Stanchina, R A Metzger, D B Rensch, M W Pierce, T V Kargodorian, Y K AllenAbstract:Implemented with 70-GHz f/sub max/, 90-GHz f/sub tau / AlInAs/GaInAs devices, 8.6-dB gain and DC 33-GHz bandwidth were attained for a monolithic active-biased cascode bipolar Feedback Amplifier. Because of the significant collector-base Feedback time constant, the cascode configuration provides a large improvement in Amplifier bandwidth, but a low-impedance bias node must be provided for the common-base transistor. An active bias network was thus used. The resulting 33-GHz Amplifier bandwidth (and predicted noise figure) is competitive with AlGaAs/GaAs MODFET travelling-wave Amplifiers, but with a much smaller die area (excluding bond pads) of 200 mu m*225 mu m. The AlInAs/GaInAs monolithic Feedback Amplifiers are extremely small, wideband gain blocks suitable for use as subcomponents in complex MMICs and MIMICs. >
M J W Rodwell - One of the best experts on this subject based on the ideXlab platform.
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33 ghz monolithic cascode alinas gainas heterojunction bipolar transistor Feedback Amplifier
IEEE Journal of Solid-state Circuits, 1991Co-Authors: M J W Rodwell, J F Jensen, W E Stanchina, R A Metzger, D B Rensch, M W Pierce, T V Kargodorian, Y K AllenAbstract:Microwave cascode Feedback Amplifiers with 8.6-dB gain and DC to 33-GHz bandwidth were developed. The Amplifiers utilize AlIn-As/GaInAs heterojunction bipolar transistors having f/sub max/=70 GHz and f/sub tau /=90 GHz. Because of the significant collector-base Feedback time constant the cascode configuration provides a large improvement in Amplifier bandwidth, but a low-impedance bias node must be provided for the common-base transistor. An active bias network was thus used which eliminates the need for on-wafer Si/sub 3/N/sub 4/ bypass capacitors. >
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33 ghz monolithic cascode alinas gainas heterojunction bipolar transistor Feedback Amplifier
Bipolar Circuits and Technology Meeting, 1990Co-Authors: M J W Rodwell, J F Jensen, W E Stanchina, R A Metzger, D B Rensch, M W Pierce, T V Kargodorian, Y K AllenAbstract:Implemented with 70-GHz f/sub max/, 90-GHz f/sub tau / AlInAs/GaInAs devices, 8.6-dB gain and DC 33-GHz bandwidth were attained for a monolithic active-biased cascode bipolar Feedback Amplifier. Because of the significant collector-base Feedback time constant, the cascode configuration provides a large improvement in Amplifier bandwidth, but a low-impedance bias node must be provided for the common-base transistor. An active bias network was thus used. The resulting 33-GHz Amplifier bandwidth (and predicted noise figure) is competitive with AlGaAs/GaAs MODFET travelling-wave Amplifiers, but with a much smaller die area (excluding bond pads) of 200 mu m*225 mu m. The AlInAs/GaInAs monolithic Feedback Amplifiers are extremely small, wideband gain blocks suitable for use as subcomponents in complex MMICs and MIMICs. >
W E Stanchina - One of the best experts on this subject based on the ideXlab platform.
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33 ghz monolithic cascode alinas gainas heterojunction bipolar transistor Feedback Amplifier
IEEE Journal of Solid-state Circuits, 1991Co-Authors: M J W Rodwell, J F Jensen, W E Stanchina, R A Metzger, D B Rensch, M W Pierce, T V Kargodorian, Y K AllenAbstract:Microwave cascode Feedback Amplifiers with 8.6-dB gain and DC to 33-GHz bandwidth were developed. The Amplifiers utilize AlIn-As/GaInAs heterojunction bipolar transistors having f/sub max/=70 GHz and f/sub tau /=90 GHz. Because of the significant collector-base Feedback time constant the cascode configuration provides a large improvement in Amplifier bandwidth, but a low-impedance bias node must be provided for the common-base transistor. An active bias network was thus used which eliminates the need for on-wafer Si/sub 3/N/sub 4/ bypass capacitors. >
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33 ghz monolithic cascode alinas gainas heterojunction bipolar transistor Feedback Amplifier
Bipolar Circuits and Technology Meeting, 1990Co-Authors: M J W Rodwell, J F Jensen, W E Stanchina, R A Metzger, D B Rensch, M W Pierce, T V Kargodorian, Y K AllenAbstract:Implemented with 70-GHz f/sub max/, 90-GHz f/sub tau / AlInAs/GaInAs devices, 8.6-dB gain and DC 33-GHz bandwidth were attained for a monolithic active-biased cascode bipolar Feedback Amplifier. Because of the significant collector-base Feedback time constant, the cascode configuration provides a large improvement in Amplifier bandwidth, but a low-impedance bias node must be provided for the common-base transistor. An active bias network was thus used. The resulting 33-GHz Amplifier bandwidth (and predicted noise figure) is competitive with AlGaAs/GaAs MODFET travelling-wave Amplifiers, but with a much smaller die area (excluding bond pads) of 200 mu m*225 mu m. The AlInAs/GaInAs monolithic Feedback Amplifiers are extremely small, wideband gain blocks suitable for use as subcomponents in complex MMICs and MIMICs. >
R A Metzger - One of the best experts on this subject based on the ideXlab platform.
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33 ghz monolithic cascode alinas gainas heterojunction bipolar transistor Feedback Amplifier
IEEE Journal of Solid-state Circuits, 1991Co-Authors: M J W Rodwell, J F Jensen, W E Stanchina, R A Metzger, D B Rensch, M W Pierce, T V Kargodorian, Y K AllenAbstract:Microwave cascode Feedback Amplifiers with 8.6-dB gain and DC to 33-GHz bandwidth were developed. The Amplifiers utilize AlIn-As/GaInAs heterojunction bipolar transistors having f/sub max/=70 GHz and f/sub tau /=90 GHz. Because of the significant collector-base Feedback time constant the cascode configuration provides a large improvement in Amplifier bandwidth, but a low-impedance bias node must be provided for the common-base transistor. An active bias network was thus used which eliminates the need for on-wafer Si/sub 3/N/sub 4/ bypass capacitors. >
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33 ghz monolithic cascode alinas gainas heterojunction bipolar transistor Feedback Amplifier
Bipolar Circuits and Technology Meeting, 1990Co-Authors: M J W Rodwell, J F Jensen, W E Stanchina, R A Metzger, D B Rensch, M W Pierce, T V Kargodorian, Y K AllenAbstract:Implemented with 70-GHz f/sub max/, 90-GHz f/sub tau / AlInAs/GaInAs devices, 8.6-dB gain and DC 33-GHz bandwidth were attained for a monolithic active-biased cascode bipolar Feedback Amplifier. Because of the significant collector-base Feedback time constant, the cascode configuration provides a large improvement in Amplifier bandwidth, but a low-impedance bias node must be provided for the common-base transistor. An active bias network was thus used. The resulting 33-GHz Amplifier bandwidth (and predicted noise figure) is competitive with AlGaAs/GaAs MODFET travelling-wave Amplifiers, but with a much smaller die area (excluding bond pads) of 200 mu m*225 mu m. The AlInAs/GaInAs monolithic Feedback Amplifiers are extremely small, wideband gain blocks suitable for use as subcomponents in complex MMICs and MIMICs. >
D B Rensch - One of the best experts on this subject based on the ideXlab platform.
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33 ghz monolithic cascode alinas gainas heterojunction bipolar transistor Feedback Amplifier
IEEE Journal of Solid-state Circuits, 1991Co-Authors: M J W Rodwell, J F Jensen, W E Stanchina, R A Metzger, D B Rensch, M W Pierce, T V Kargodorian, Y K AllenAbstract:Microwave cascode Feedback Amplifiers with 8.6-dB gain and DC to 33-GHz bandwidth were developed. The Amplifiers utilize AlIn-As/GaInAs heterojunction bipolar transistors having f/sub max/=70 GHz and f/sub tau /=90 GHz. Because of the significant collector-base Feedback time constant the cascode configuration provides a large improvement in Amplifier bandwidth, but a low-impedance bias node must be provided for the common-base transistor. An active bias network was thus used which eliminates the need for on-wafer Si/sub 3/N/sub 4/ bypass capacitors. >
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33 ghz monolithic cascode alinas gainas heterojunction bipolar transistor Feedback Amplifier
Bipolar Circuits and Technology Meeting, 1990Co-Authors: M J W Rodwell, J F Jensen, W E Stanchina, R A Metzger, D B Rensch, M W Pierce, T V Kargodorian, Y K AllenAbstract:Implemented with 70-GHz f/sub max/, 90-GHz f/sub tau / AlInAs/GaInAs devices, 8.6-dB gain and DC 33-GHz bandwidth were attained for a monolithic active-biased cascode bipolar Feedback Amplifier. Because of the significant collector-base Feedback time constant, the cascode configuration provides a large improvement in Amplifier bandwidth, but a low-impedance bias node must be provided for the common-base transistor. An active bias network was thus used. The resulting 33-GHz Amplifier bandwidth (and predicted noise figure) is competitive with AlGaAs/GaAs MODFET travelling-wave Amplifiers, but with a much smaller die area (excluding bond pads) of 200 mu m*225 mu m. The AlInAs/GaInAs monolithic Feedback Amplifiers are extremely small, wideband gain blocks suitable for use as subcomponents in complex MMICs and MIMICs. >