The Experts below are selected from a list of 327 Experts worldwide ranked by ideXlab platform
Yuanbo Zhang - One of the best experts on this subject based on the ideXlab platform.
-
black phosphorus Field Effect Transistors
Nature Nanotechnology, 2014Co-Authors: Likai Li, Guo Jun Ye, Qingqin Ge, Xian Hui Chen, Xuedong Ou, Yijun Yu, Hua Wu, D L Feng, Yuanbo ZhangAbstract:Field-Effect Transistors with good electrical performance at room temperature are fabricated from few-layer black phosphorus.
-
Black phosphorus Field-Effect Transistors.
Nat. Nanotechnol., 2014Co-Authors: Likai Li, Guo Jun Ye, Qingqin Ge, Xian Hui Chen, Xuedong Ou, Donglai Feng, Yijun Yu, Hua Wu, Yuanbo ZhangAbstract:Two-dimensional crystals have emerged as a class of materials that may impact future electronic technologies. Experimentally identifying and characterizing new functional two-dimensional materials is challenging, but also potentially rewarding. Here, we fabricate Field-Effect Transistors based on few-layer black phosphorus crystals with thickness down to a few nanometres. Reliable transistor performance is achieved at room temperature in samples thinner than 7.5 nm, with drain current modulation on the order of 10(5) and well-developed current saturation in the I-V characteristics. The charge-carrier mobility is found to be thickness-dependent, with the highest values up to ∼ 1,000 cm(2) V(-1) s(-1) obtained for a thickness of ∼ 10 nm. Our results demonstrate the potential of black phosphorus thin crystals as a new two-dimensional material for applications in nanoelectronic devices.
Robert Coffie - One of the best experts on this subject based on the ideXlab platform.
-
Slant Field Plate Model for Field-Effect Transistors
IEEE Transactions on Electron Devices, 2014Co-Authors: Robert CoffieAbstract:The simplified Field plate model for Field-Effect Transistors previously introduced is further developed to allow arbitrary transition angles between gate and Field plate or adjacent Field plates. The model shows that transition angles less than 30° (measured from the surface) can result in significant improvements in electric Field management.
-
Analytical Field Plate Model for Field Effect Transistors
IEEE Transactions on Electron Devices, 2014Co-Authors: Robert CoffieAbstract:A simplified model for Field plates applied to Field Effect Transistors is developed with conformal mapping. From the model, universal design rules are generated for Field plate length (LFP) and Field plate distance from the channel (a1) based on aspect ratio (LFP/a1) and pinchoff voltage of the Field plate. These rules can then be used for finite element model refinement or experimental starting points for process design of experiments for Field plate optimization.
S N Mohammad - One of the best experts on this subject based on the ideXlab platform.
-
diameter dependent transport properties of gallium nitride nanowire Field Effect Transistors
Applied Physics Letters, 2007Co-Authors: Abhishek Motayed, Mark D Vaudin, Albert V Davydov, John Melngailis, Maoqi He, S N MohammadAbstract:The authors report transport property measurements of individual GaN nanowire Field Effect Transistors and the correlation of the electron mobilities with the existence of grain boundaries in these nanowires. Room temperature Field Effect electron mobilities as high as 319cm2V−1s−1 were obtained for the 200nm diameter nanowires. Mobilities calculated from these reliable nanowire Field Effect Transistors indicated that the surface scattering plays a dominant role in smaller diameter nanowires, whereas for intermediate diameter devices transport is dominated by grain boundary scattering. Reduction of the mobility with decreasing diameter of nanowires can be explained using “continuous surface” model.
Likai Li - One of the best experts on this subject based on the ideXlab platform.
-
black phosphorus Field Effect Transistors
Nature Nanotechnology, 2014Co-Authors: Likai Li, Guo Jun Ye, Qingqin Ge, Xian Hui Chen, Xuedong Ou, Yijun Yu, Hua Wu, D L Feng, Yuanbo ZhangAbstract:Field-Effect Transistors with good electrical performance at room temperature are fabricated from few-layer black phosphorus.
-
Black phosphorus Field-Effect Transistors.
Nat. Nanotechnol., 2014Co-Authors: Likai Li, Guo Jun Ye, Qingqin Ge, Xian Hui Chen, Xuedong Ou, Donglai Feng, Yijun Yu, Hua Wu, Yuanbo ZhangAbstract:Two-dimensional crystals have emerged as a class of materials that may impact future electronic technologies. Experimentally identifying and characterizing new functional two-dimensional materials is challenging, but also potentially rewarding. Here, we fabricate Field-Effect Transistors based on few-layer black phosphorus crystals with thickness down to a few nanometres. Reliable transistor performance is achieved at room temperature in samples thinner than 7.5 nm, with drain current modulation on the order of 10(5) and well-developed current saturation in the I-V characteristics. The charge-carrier mobility is found to be thickness-dependent, with the highest values up to ∼ 1,000 cm(2) V(-1) s(-1) obtained for a thickness of ∼ 10 nm. Our results demonstrate the potential of black phosphorus thin crystals as a new two-dimensional material for applications in nanoelectronic devices.
Peidong Yang - One of the best experts on this subject based on the ideXlab platform.
-
silicon vertically integrated nanowire Field Effect Transistors
Nano Letters, 2006Co-Authors: Josh Goldberger, Allon I Hochbaum, Peidong YangAbstract:Silicon nanowires have received considerable attention as transistor components because they represent a facile route toward sub-100-nm single-crystalline Si features. Herein we demonstrate the direct vertical integration of Si nanowire arrays into surrounding gate Field Effect Transistors without the need for postgrowth nanowire assembly processes. The device fabrication allows Si nanowire channel diameters to be readily reduced to the 5-nm regime. These first-generation vertically integrated nanowire Field Effect Transistors (VINFETs) exhibit electronic properties that are comparable to other horizontal nanowire Field Effect Transistors (FETs) and may, with further optimization, compete with advanced solid-state nanoelectronic devices.