The Experts below are selected from a list of 3147 Experts worldwide ranked by ideXlab platform

Jerzy Kanicki - One of the best experts on this subject based on the ideXlab platform.

  • COLOR AND CONTRAST PERCEPTION IN MONOCHROME MEDICAL IMAGING Flat-Panel Displays
    2016
    Co-Authors: Aldo Badano, Jerzy Kanicki
    Abstract:

    The interpretation of diagnostic grayscale images by human beings relies on luminance discrimination at photopic levels. The observer in his search for abnormality relies on luminance modulation. If this hypothesis is valid, then the color of a monochrome presentation should not affect diagnostic performance when the image luminance is equivalent to grayscale levels. Does observer preference for a particular tint influence his performance defining an ideally colored grayscale? In this paper, we studied the variations in supra-threshold contrast perception when using different colored scales to display psychophysics targets on uniform background. We used targets with six different colored scales based upon the hue and saturation levels, while maintaining a constant luminosity. The six colored scales and the ”white ” grayscale constituted our set of seven colored scales used in a two-alternative forced choice scheme with random presentation and eighteen observers. All image targets contained the same degree of physical contrast and the same luminance values. We computed the degree of preference for all possible combinations of two colored scales. In spite of large inter-observer variability, we found that green and blue scales result in higher perceived contrast

  • asymmetric electrical properties of half corbino hydrogenated amorphous silicon thin film transistor and its applications to Flat Panel Displays
    Japanese Journal of Applied Physics, 2011
    Co-Authors: Hojin Lee, Chehung Liu, Jerzy Kanicki
    Abstract:

    The half-Corbino hydrogenated amorphous silicon (a-Si:H) thin-film transistors (TFTs) were fabricated with a five-photomask process used in the processing of the active matrix liquid-crystal Displays (AM-LCD). We showed that the a-Si:H half-Corbino TFTs have the asymmetric electrical characteristics under different drain-bias conditions. In comparison to half-Corbino TFT with unpatterned gate electrode, the device parasitic capacitance can be significantly reduced by patterning the gate electrode for same device dimension, while the sub-threshold swing and threshold voltage remain identical for same bias condition. The OFF-current remains below 0.1 pA for all device configurations. Finally, we discuss their potential applications as a driving or switching TFT to various Flat Panel Displays.

  • asymmetric electrical properties of fork a si h thin film transistor and its application to Flat Panel Displays
    Journal of Applied Physics, 2009
    Co-Authors: Hojin Lee, Geonwook Yoo, Juhn S Yoo, Jerzy Kanicki
    Abstract:

    Inverted stagger hydrogenated amorphous silicon (a-Si:H) fork-shaped thin-film transistors (TFTs) were fabricated with a five-photomask process used in the processing of the active-matrix liquid crystal Displays (AM-LCDs). We investigated the asymmetric electrical characteristics of a fork-shaped a-Si:H TFT under different bias conditions. To extract the electrical device parameters, we developed asymmetric geometrical factors. Current-voltage measurements indicate that the ON-OFF current ratio of fork TFT can be enhanced significantly by choosing the outer electrode as the drain, while the field-effect mobility and threshold voltage have the identical values when different drain bias conditions are used. Finally, we developed concepts of its possible application to AM-LCDs.

  • p 13 photosensitivity of amorphous igzo tfts for active matrix Flat Panel Displays
    2008 SID INTERNATIONAL SYMPOSIUM DIGEST OF TECHNICAL PAPERS VOL XXXIX BOOKS I-III, 2008
    Co-Authors: Kenji Nomura, Toshio Kamiya, Hideo Hosono, Chiaoshun Chuang, Tzeching Fung, Barry G Mullins, Hanping D Shieh, Jerzy Kanicki
    Abstract:

    We studied the optical and electrical properties of the amorphous indium gallium zinc oxide thin-film transistors (a-IGZO TFTs). To develop a-IGZO density-of-states model, intrinsic a-IGZO optical properties such as optical band gap and Urbach energy, and TFT characteristics under illumination are investigated. During the a-IGZO TFTs illumination with the wavelengths ranging from 460 to 660 nm, the off-state drain current only slightly increases while a large increase was observed for the wavelength below 400 nm. Threshold voltage and subthreshold swing are also only slightly modified between 460 to 660 nm, while field-effect mobility is almost unchanged in the investigated photon energy range. The observed results are consistent with the a-IGZO optical energy band gap of about 3.05 eV. This study suggest that the a-IGZO TFTs are light sensitive above 3.0 eV and photogenerated electrons are more mobile than holes within device channel region.

  • asymmetric electrical properties of corbino a si h tft and concepts of its application to Flat Panel Displays
    IEEE Transactions on Electron Devices, 2007
    Co-Authors: Hojin Lee, Juhnsuk Yoo, Changdong Kim, Injae Chung, Jerzy Kanicki
    Abstract:

    Inverted stagger hydrogenated-amorphous-silicon (a-Si:H) Corbino thin-film transistors (TFTs) were fabricated with a five-photomask process used in the processing of the active-matrix liquid-crystal Displays (AM-LCD). The authors show that the a-Si:H Corbino TFT has the asymmetric electrical characteristics under different drain-bias conditions. To accommodate for these differences when the electrical device parameters are extracted, the authors developed asymmetric geometric factors. The ON-OFF current ratio can be significantly enhanced by choosing the outer electrode as the drain, while the field-effect mobility and threshold voltage are identical when different drain-bias conditions are used. Finally, the authors developed concepts of its possible application to AM-LCDs and active-matrix organic light-emitting Displays

Stephen R Forrest - One of the best experts on this subject based on the ideXlab platform.

  • design of Flat Panel Displays based on organic light emitting devices
    IEEE Journal of Selected Topics in Quantum Electronics, 1998
    Co-Authors: Stephen R Forrest
    Abstract:

    We provide a systematic and quantitative analysis of the design of Flat-Panel Displays (FPDs) based on organic light-emitting devices (OLEDs). Key performance parameters are estimated for OLED-based Displays; system issues, including addressing schemes and strategies required to achieve full-color Displays, are treated quantitatively. Furthermore, addressing schemes for recently demonstrated, full-color high-resolution stacked OLED's are discussed. Our analysis shows that OLED technology is suitable for many FPD applications, and can provide performance superior to that achieved using alternative display technologies.

  • Achieving full-color organic light-emitting devices for lightweight, Flat-Panel Displays
    IEEE Transactions on Electron Devices, 1997
    Co-Authors: P. E. Burrows, Stephen R Forrest, V. Bulović, Zilan Shen, Mark E. Thompson
    Abstract:

    We review recent results in the field of organic light-emitting devices (OLED's), with particular attention to the application of organic light-emitting devices to ultra-lightweight, full color, Flat-Panel Displays. We show that OLED brightness, efficiency, operating voltage, and lifetime is sufficient to compete with other Flat-Panel display technologies such as backlit liquid crystal Displays. We describe a novel, tunable OLED consisting of vertically stacked, transparent light-emitting devices which can serve as a color-tunable element in high-resolution full-color display., In addition, the unique physical properties of organic thin films allow for flexible, conformable, or foldable Displays which are unobtainable with conventional, inorganic semiconductor technologies.

  • reliability and degradation of organic light emitting devices
    Applied Physics Letters, 1994
    Co-Authors: P. E. Burrows, Stephen R Forrest, Vladimir Bulovic, Linda S Sapochak, Dennis Matthew Mccarty, Mark E. Thompson
    Abstract:

    We present a simple encapsulation technique for organic light emitting devices (OLEDs). By studying the degradation of a population of OLEDs, we show that the lifetime of encapsulated devices is increased by more than two orders of magnitude over that of unencapsulated devices. In both cases, degradation is primarily due to the formation of nonemissive regions, or dark spot defects. By studying the structure and evolution of the dark spots, we infer that the growth of electrode defects limits device lifetime. Hermetic packaging of OLEDs is essential if they are to be used in commercially viable Flat Panel Displays.

Mark E. Thompson - One of the best experts on this subject based on the ideXlab platform.

  • Achieving full-color organic light-emitting devices for lightweight, Flat-Panel Displays
    IEEE Transactions on Electron Devices, 1997
    Co-Authors: P. E. Burrows, Stephen R Forrest, V. Bulović, Zilan Shen, Mark E. Thompson
    Abstract:

    We review recent results in the field of organic light-emitting devices (OLED's), with particular attention to the application of organic light-emitting devices to ultra-lightweight, full color, Flat-Panel Displays. We show that OLED brightness, efficiency, operating voltage, and lifetime is sufficient to compete with other Flat-Panel display technologies such as backlit liquid crystal Displays. We describe a novel, tunable OLED consisting of vertically stacked, transparent light-emitting devices which can serve as a color-tunable element in high-resolution full-color display., In addition, the unique physical properties of organic thin films allow for flexible, conformable, or foldable Displays which are unobtainable with conventional, inorganic semiconductor technologies.

  • reliability and degradation of organic light emitting devices
    Applied Physics Letters, 1994
    Co-Authors: P. E. Burrows, Stephen R Forrest, Vladimir Bulovic, Linda S Sapochak, Dennis Matthew Mccarty, Mark E. Thompson
    Abstract:

    We present a simple encapsulation technique for organic light emitting devices (OLEDs). By studying the degradation of a population of OLEDs, we show that the lifetime of encapsulated devices is increased by more than two orders of magnitude over that of unencapsulated devices. In both cases, degradation is primarily due to the formation of nonemissive regions, or dark spot defects. By studying the structure and evolution of the dark spots, we infer that the growth of electrode defects limits device lifetime. Hermetic packaging of OLEDs is essential if they are to be used in commercially viable Flat Panel Displays.

Hideo Hosono - One of the best experts on this subject based on the ideXlab platform.

  • Electronic defects in amorphous oxide semiconductor and recent development
    2020 27th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD), 2020
    Co-Authors: Keisuke Ide, Hideo Hosono, Toshio Kamiya
    Abstract:

    Amorphous oxide semiconductors (AOSs) represented by amorphous In-Ga-Zn-O have been applied for state-of-the-art Flat Panel Displays as thin-film transistor backplane since 2012. Understanding defects in AOS is critically important for controlling the instability of TFTs. It is found in the past decades that many AOS defects are related to oxygen and hydrogen impurities, though oxygen is the major constituent of AOS and hydrogen is not intentionally incorporated.

  • Amorphous Oxide Semiconductor Thin-Film Transistors
    Novel Structured Metallic and Inorganic Materials, 2019
    Co-Authors: Toshio Kamiya, Kenji Nomura, Keisuke Ide, Jungwhan Kim, Hidenori Hiramatsu, Hideya Kumomi, Hideo Hosono
    Abstract:

    Amorphous oxide semiconductor (AOS) is now commercialized in many Flat-Panel Displays. On the other hand, its electronic structures and defects are largely different from conventional covalent semiconductors such as Si. This chapter explains their origins and reviews the defects that have been known to date. Finally, we will discuss how to fabricate high-quality, stabile AOS.

  • Invited) Roles of Hydrogen in Amorphous Oxide Semiconductor
    ECS Transactions, 2013
    Co-Authors: Toshio Kamiya, Hideo Hosono
    Abstract:

    Amorphous oxide semiconductor represented by a-In-Ga-Zn-O is now used for thin-film transistors in some of current Flat-Panel Displays due to its high mobility and good stability. Recently, it has been recognized that a-In-Ga-Zn-O films include some types of oxygen working as electron traps and that high-density impurity hydrogens. This paper reviews the recent findings on their roles.

  • Transparent Amorphous Oxide Semiconductors for Flexible Electronics
    Handbook of Transparent Conductors, 2010
    Co-Authors: Hideo Hosono
    Abstract:

    Transparent amorphous oxide semiconductors have large electron mobility comparable to that in the corresponding crystalline materials and conductivity is continuously controllable from the almost insulating state to the degenerate state. Thin film transistors employing these materials as the channel layer exhibit excellent performance, mobility and stability, notwithstanding that they can be easily fabricated by the conventional sputtering technique at low temperatures. Extensive research is going on aiming at application to the backplane to drive next generation Flat Panel Displays. This chapter describes the fundamentals of these materials and application to Displays.

  • intrinsic carrier mobility in amorphous in ga zn o thin film transistors determined by combined field effect technique
    Applied Physics Letters, 2010
    Co-Authors: Mutsumi Kimura, Kenji Nomura, Toshio Kamiya, Takashi Nakanishi, Hideo Hosono
    Abstract:

    Amorphous In–Ga–Zn–O (α-IGZO) is expected for thin-film transistors (TFTs) in next-generation Flat-Panel Displays but its intrinsic properties are not understood well and different mobility models have been applied to different films. This letter reports that a universal mobility model is obtained using a field-effect technique and capacitance-voltage method. Electrical characteristics of α-IGZO TFTs subjected to different annealing are reproduced using the mobility model and different trap densities. The present achievement will be a necessary basis to establish device and circuit simulators for α-IGZO-based electronic applications.

Doo Na Kim - One of the best experts on this subject based on the ideXlab platform.

  • solution processed zinc indium tin oxide thin film transistors for Flat Panel Displays
    Applied Physics Letters, 2013
    Co-Authors: Bo Sung Kim, Yeon Taek Jeong, Doohyoung Lee, Taeyoung Choi, Seungho Jung, June Whan Choi, Chanwoo Yang, Byung Ju Lee, Eunhye Park, Doo Na Kim
    Abstract:

    Highly uniform thin-films of zinc-indium-tin oxide (ZITO) semiconductors were formed using solution process with wet-annealing at a low temperature of 250 °C. The solution-processed ZITO thin-film transistors with a top-gate staggered structure were fabricated to exhibit field-effect mobility of 2.04 ± 0.28 cm2/Vs at saturation region, threshold voltage (Vth) of 2.15 ± 0.75 V, subthreshold slope of 0.27 ± 0.14 V/dec. and excellent reliability (ΔVth = −4.35 V) for negative bias temperature illumination stress. Based on the performance, a 10.1 in. full-color liquid crystal display was demonstrated by the optimized full photolithography process.