The Experts below are selected from a list of 753 Experts worldwide ranked by ideXlab platform
Pooi See Lee - One of the best experts on this subject based on the ideXlab platform.
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A light-stimulated synaptic transistor with synaptic plasticity and memory functions based on InGaZnOx–Al2O3 thin film structure
Journal of Applied Physics, 2016Co-Authors: Tupei Chen, Yong Liu, P. Liu, Hu Shaogang, Qing Zhang, Pooi See LeeAbstract:In this work, a synaptic transistor based on the indium gallium zinc oxide (IGZO)–aluminum oxide (Al2O3) thin film structure, which uses ultraviolet (UV) light pulses as the pre-synaptic stimulus, has been demonstrated. The synaptic transistor exhibits the behavior of synaptic plasticity like the paired-pulse facilitation. In addition, it also shows the brain's memory behaviors including the transition from short-term memory to long-term memory and the Ebbinghaus Forgetting Curve. The synapse-like behavior and memory behaviors of the transistor are due to the trapping and detrapping processes of the holes, which are generated by the UV pulses, at the IGZO/Al2O3 interface and/or in the Al2O3 layer.
Tupei Chen - One of the best experts on this subject based on the ideXlab platform.
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A light-stimulated synaptic transistor with synaptic plasticity and memory functions based on InGaZnOx–Al2O3 thin film structure
Journal of Applied Physics, 2016Co-Authors: Tupei Chen, Yong Liu, P. Liu, Hu Shaogang, Qing Zhang, Pooi See LeeAbstract:In this work, a synaptic transistor based on the indium gallium zinc oxide (IGZO)–aluminum oxide (Al2O3) thin film structure, which uses ultraviolet (UV) light pulses as the pre-synaptic stimulus, has been demonstrated. The synaptic transistor exhibits the behavior of synaptic plasticity like the paired-pulse facilitation. In addition, it also shows the brain's memory behaviors including the transition from short-term memory to long-term memory and the Ebbinghaus Forgetting Curve. The synapse-like behavior and memory behaviors of the transistor are due to the trapping and detrapping processes of the holes, which are generated by the UV pulses, at the IGZO/Al2O3 interface and/or in the Al2O3 layer.
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Emulating the Ebbinghaus Forgetting Curve of the human brain with a NiO-based memristor
Applied Physics Letters, 2013Co-Authors: Yong Liu, Tupei Chen, Z. Liu, Longjiang Deng, You Yin, Sumio HosakaAbstract:The well-known Ebbinghaus Forgetting Curve, which describes how information is forgotten over time, can be emulated using a NiO-based memristor with conductance that decreases with time after the application of electrical pulses. Here, the conductance is analogous to the memory state, while each electrical pulse represents a memory stimulation or learning event. The decrease in the conductance with time depends on the stimulation parameters, including pulse height and width and the number of pulses, which emulates memory loss behavior well in that the time taken for the memory to be lost depends on how the information is learned.
Yong Liu - One of the best experts on this subject based on the ideXlab platform.
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A light-stimulated synaptic transistor with synaptic plasticity and memory functions based on InGaZnOx–Al2O3 thin film structure
Journal of Applied Physics, 2016Co-Authors: Tupei Chen, Yong Liu, P. Liu, Hu Shaogang, Qing Zhang, Pooi See LeeAbstract:In this work, a synaptic transistor based on the indium gallium zinc oxide (IGZO)–aluminum oxide (Al2O3) thin film structure, which uses ultraviolet (UV) light pulses as the pre-synaptic stimulus, has been demonstrated. The synaptic transistor exhibits the behavior of synaptic plasticity like the paired-pulse facilitation. In addition, it also shows the brain's memory behaviors including the transition from short-term memory to long-term memory and the Ebbinghaus Forgetting Curve. The synapse-like behavior and memory behaviors of the transistor are due to the trapping and detrapping processes of the holes, which are generated by the UV pulses, at the IGZO/Al2O3 interface and/or in the Al2O3 layer.
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Emulating the Ebbinghaus Forgetting Curve of the human brain with a NiO-based memristor
Applied Physics Letters, 2013Co-Authors: Yong Liu, Tupei Chen, Z. Liu, Longjiang Deng, You Yin, Sumio HosakaAbstract:The well-known Ebbinghaus Forgetting Curve, which describes how information is forgotten over time, can be emulated using a NiO-based memristor with conductance that decreases with time after the application of electrical pulses. Here, the conductance is analogous to the memory state, while each electrical pulse represents a memory stimulation or learning event. The decrease in the conductance with time depends on the stimulation parameters, including pulse height and width and the number of pulses, which emulates memory loss behavior well in that the time taken for the memory to be lost depends on how the information is learned.
Qing Zhang - One of the best experts on this subject based on the ideXlab platform.
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A light-stimulated synaptic transistor with synaptic plasticity and memory functions based on InGaZnOx–Al2O3 thin film structure
Journal of Applied Physics, 2016Co-Authors: Tupei Chen, Yong Liu, P. Liu, Hu Shaogang, Qing Zhang, Pooi See LeeAbstract:In this work, a synaptic transistor based on the indium gallium zinc oxide (IGZO)–aluminum oxide (Al2O3) thin film structure, which uses ultraviolet (UV) light pulses as the pre-synaptic stimulus, has been demonstrated. The synaptic transistor exhibits the behavior of synaptic plasticity like the paired-pulse facilitation. In addition, it also shows the brain's memory behaviors including the transition from short-term memory to long-term memory and the Ebbinghaus Forgetting Curve. The synapse-like behavior and memory behaviors of the transistor are due to the trapping and detrapping processes of the holes, which are generated by the UV pulses, at the IGZO/Al2O3 interface and/or in the Al2O3 layer.
Hu Shaogang - One of the best experts on this subject based on the ideXlab platform.
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A light-stimulated synaptic transistor with synaptic plasticity and memory functions based on InGaZnOx–Al2O3 thin film structure
Journal of Applied Physics, 2016Co-Authors: Tupei Chen, Yong Liu, P. Liu, Hu Shaogang, Qing Zhang, Pooi See LeeAbstract:In this work, a synaptic transistor based on the indium gallium zinc oxide (IGZO)–aluminum oxide (Al2O3) thin film structure, which uses ultraviolet (UV) light pulses as the pre-synaptic stimulus, has been demonstrated. The synaptic transistor exhibits the behavior of synaptic plasticity like the paired-pulse facilitation. In addition, it also shows the brain's memory behaviors including the transition from short-term memory to long-term memory and the Ebbinghaus Forgetting Curve. The synapse-like behavior and memory behaviors of the transistor are due to the trapping and detrapping processes of the holes, which are generated by the UV pulses, at the IGZO/Al2O3 interface and/or in the Al2O3 layer.