The Experts below are selected from a list of 87288 Experts worldwide ranked by ideXlab platform
J C Campbell - One of the best experts on this subject based on the ideXlab platform.
-
frequency response and bandwidth enhancement in ge si avalanche photodiodes with over 840ghz gain bandwidth Product
Optics Express, 2009Co-Authors: Wissem Sfar Zaoui, John E. Bowers, Huiwen Chen, Yimin Kang, Mike Morse, Mario J Paniccia, A Pauchard, J C CampbellAbstract:In this work we report a separate-absorption-charge-multiplication Ge/Si avalanche photodiode with an enhanced Gain-Bandwidth-Product of 845GHz at a wavelength of 1310nm. The corresponding gain value is 65 and the electrical bandwidth is 13GHz at an optical input power of −30dBm. The unconventional high Gain-Bandwidth-Product is investigated using device physical simulation and optical pulse response measurement. The analysis of the electric field distribution, electron and hole concentration and drift velocities in the device shows that the enhanced Gain-Bandwidth-Product at high bias voltages is due to a decrease of the transit time and avalanche build-up time limitation at high fields.
-
origin of the gain bandwidth Product enhancement in separate absorption charge multiplication ge si avalanche photodiodes
Optical Fiber Communication Conference, 2009Co-Authors: Wissem Sfar Zaoui, John E. Bowers, Huiwen Chen, Yimin Kang, Mike Morse, Mario J Paniccia, A Pauchard, J C CampbellAbstract:A separate-absorption-charge-multiplication Ge/Si avalanche photodiode with very high Gain-Bandwidth-Product over 800GHz is reported. The origin of this dramatically high value is explained using well consentient measurement and simulation results.
-
detrimental effect of impact ionization in the absorption region on the frequency response and excess noise performance of ingaas inalas sacm avalanche photodiodes
IEEE Journal of Quantum Electronics, 2005Co-Authors: Ning Duan, J C Campbell, S Wang, Xiaoguang Zheng, C S Wang, L A ColdrenAbstract:It is shown that optimization of the electric field profile in the absorption region of separate absorption, charge, and multiplication InGaAs-InAlAs avalanche photodiodes is critical to achieve low excess noise and high gain bandwidth Product.
-
High-speed and low-noise SACM avalanche photodiodes with an impact-ionization-engineered multiplication region
IEEE Photonics Technology Letters, 2005Co-Authors: Ning Duan, J C Campbell, S Wang, Ning Li, Chad Wang, L A ColdrenAbstract:A separate absorption, charge, and multiplication In/sub 0.53/Ga/sub 0.47/As-In/sub 0.52/Al/sub 0.48/As avalanche photodiode with an impact-ionization-engineered multiplication region is reported. By implementing an electric field gradient in the multiplication region, better control of impact-ionization can be achieved. Gain-Bandwidth Product of 160 GHz and excess noise factor with an equivalent k value of 0.1 are demonstrated.
-
waveguide avalanche photodiode operating at 1 55 μm with a gain bandwidth Product of 320 ghz
IEEE Photonics Technology Letters, 2001Co-Authors: G S Kinsey, J C Campbell, Andrew DentaiAbstract:An In/sub 0.52/Al/sub 0.48/As-In/sub 0.53/Ga/sub 0.47/As waveguide avalanche photodiode with a record Gain-Bandwidth Product of over 320 GHz has been demonstrated. A bandwidth of 28 GHz was achieved at low gains with low excess noise and a quantum efficiency of 16% at 1.55 /spl mu/m.
Joe C. Campbell - One of the best experts on this subject based on the ideXlab platform.
-
Recent advances in telecommunications avalanche photodiodes
Journal of Lightwave Technology, 2007Co-Authors: Joe C. CampbellAbstract:For high-bit-rate long-haul fiber optic communications, the avalanche photodiode (APD) is frequently the photodetector of choice owing to its internal gain, which provides a sensitivity margin relative to PIN photodiodes. APDs can achieve 5-10-dB better sensitivity than PINs, provided that the multiplication noise is low and the Gain-Bandwidth Product is sufficiently high. In the past decade, the performance of APDs for optical fiber communication systems has improved as a result of improvements in materials and the development of advanced device structures. This paper presents a brief review of APD fundamentals and describes some of the significant advances
-
Resonant-cavity InGaAs-InAlAs avalanche photodiodes with Gain-Bandwidth Product of 290 GHz
IEEE Photonics Technology Letters, 1999Co-Authors: C. Lenox, H. Nie, Ping Yuan, Geoffrey S. Kinsey, Ben G. Streetman, A.l. Homles, Joe C. CampbellAbstract:We demonstrated a high-speed, resonant-cavity InGaAs-InAlAs separate absorption, charge, and multiplication avalanche photodiode (APD) operating at a wavelength of 1.55 /spl mu/m. Due to the resonant-cavity scheme, these APDs exhibit high external quantum efficiency (/spl sim/70%) and a high unity-gain bandwidth of 24 GHz. Utilizing the excellent noise characteristics of a thin InAlAs multiplication region (k/spl sim/0.18), we have also achieved a Gain-Bandwidth Product of 290 GHz. These bandwidth results are believed to be the highest reported values for APDs operating at 1.55 /spl mu/m.
-
Resonant-cavity separate absorption, charge and multiplication avalanche photodiodes with high-speed and high Gain-Bandwidth Product
IEEE Photonics Technology Letters, 1998Co-Authors: H. Nie, K.a. Anselm, C. Lenox, Ping Yuan, Geoffrey S. Kinsey, Ben G. Streetman, Joe C. CampbellAbstract:Previously, it has been shown that resonant-cavity separate-absorption-and-multiplication (SAM) avalanche photodiodes (APD's) exhibit high-speed and high Gain-Bandwidth Products. In this letter, we describe a resonant-cavity SAM APD with an additional charge layer that provides better control of the electric field profile. These devices have achieved bandwidths as high as 33 GHz in the low-gain regime and a record Gain-Bandwidth Product of 290 GHz. We also describe the correlation between the Gain-Bandwidth Product and the doping level in the charge layer. With width dependent ionization coefficients, the current versus voltage (I-V) and Gain-Bandwidth simulations agree well with the measured results and indicate that even higher Gain-Bandwidth should be achievable with an optimized SACM APD structure.
Ning Duan - One of the best experts on this subject based on the ideXlab platform.
-
silicon optical interconnect device technologies for 40 gb s and beyond
IEEE Journal of Selected Topics in Quantum Electronics, 2013Co-Authors: Tsungyang Liow, Junfeng Song, Ej A Lim, Qing Fang, Ning DuanAbstract:Important active technologies, modulators, photodetectors, and thermooptics for low-energy silicon optical interconnects are discussed. High-speed performance up to 40 Gb/s is reported for the silicon modulators and germanium photodetectors, and approaches for further improvement in speed and efficiency are presented. Low-voltage avalanche multiplication is demonstrated, giving a Gain-Bandwidth Product of 75 GHz, while the combined effects of multiplication gain and the Franz-Keldysh effect enable a 5-μm-long germanium photodetector to achieve responsivity in the L-band that is comparable to that in the C-band. With trench-based thermal isolation, a low switching power of 0.4 mW is achieved for a thermooptic switch.
-
310 ghz gain bandwidth Product ge si avalanche photodetector for 1550 nm light detection
Optics Express, 2012Co-Authors: Ning Duan, Tsungyang Liow, Andy Eujin Lim, L DingAbstract:We report a normal incidence Ge/Si avalanche photodiode with separate-absorption-charge-multiplication (SACM) structure by selective epitaxial growth. By proper design of charge and multiplication layers and by optimizing the electric field distribution in the depletion region to eliminate germanium impact-ionization at high gain, a high responsivity of 12 A/W and a large Gain-Bandwidth Product of 310 GHz have been achieved at 1550 nm.
-
detrimental effect of impact ionization in the absorption region on the frequency response and excess noise performance of ingaas inalas sacm avalanche photodiodes
IEEE Journal of Quantum Electronics, 2005Co-Authors: Ning Duan, J C Campbell, S Wang, Xiaoguang Zheng, C S Wang, L A ColdrenAbstract:It is shown that optimization of the electric field profile in the absorption region of separate absorption, charge, and multiplication InGaAs-InAlAs avalanche photodiodes is critical to achieve low excess noise and high gain bandwidth Product.
-
High-speed and low-noise SACM avalanche photodiodes with an impact-ionization-engineered multiplication region
IEEE Photonics Technology Letters, 2005Co-Authors: Ning Duan, J C Campbell, S Wang, Ning Li, Chad Wang, L A ColdrenAbstract:A separate absorption, charge, and multiplication In/sub 0.53/Ga/sub 0.47/As-In/sub 0.52/Al/sub 0.48/As avalanche photodiode with an impact-ionization-engineered multiplication region is reported. By implementing an electric field gradient in the multiplication region, better control of impact-ionization can be achieved. Gain-Bandwidth Product of 160 GHz and excess noise factor with an equivalent k value of 0.1 are demonstrated.
F C Hong - One of the best experts on this subject based on the ideXlab platform.
-
dynamic analysis of a si sige based impact ionization avalanche transit time photodiode with an ultrahigh gain bandwidth Product
IEEE Electron Device Letters, 2009Co-Authors: J W Shi, F M Kuo, F C HongAbstract:We investigate the dynamic performance of a Si/SiGe-based impact ionization avalanche transit time photodiode (PD) fabricated on a standard Si substrate that operates at the 830-nm wavelength. The bandwidth-enhancement effect under negative-photoconductance (NPC) operation can greatly relax the internal transit time as well as the tradeoff between the gain and bandwidth performance that characterizes the traditional avalanche PD. Our modeling and measurement results show that the extracted internal resonant frequency increases significantly with the reverse leakage current. By choosing the proper bias voltage in the NPC region, we can simultaneously achieve a wide 3-dB bandwidth (30 GHz), ultrahigh Gain-Bandwidth Product (690 GHz) with a 53.2% external efficiency at unit gain, and clear eye opening at 10 Gb/s.
-
a si sige based impact ionization avalanche transit time photodiode with ultra high gain bandwidth Product 690ghz for 10 gb s fiber communication
Optical Fiber Communication Conference, 2009Co-Authors: J W Shi, F M Kuo, F C Hong, D J F Fulgoni, L J Nash, M PalmerAbstract:We demonstrate Si/SiGe Impact-Ionization-Avalanche-Transit-Time Photodiodes at 830nm wavelength. It achieves an ultra-high Gain-Bandwidth Product (690GHz, 30GHz bandwidth) with high external efficiency (53.2%) and 10Gbit/sec eye-opening neither using costly silicon-on-insulator substrate nor integrating with active ICs.
Ben G. Streetman - One of the best experts on this subject based on the ideXlab platform.
-
Resonant-cavity InGaAs-InAlAs avalanche photodiodes with Gain-Bandwidth Product of 290 GHz
IEEE Photonics Technology Letters, 1999Co-Authors: C. Lenox, H. Nie, Ping Yuan, Geoffrey S. Kinsey, Ben G. Streetman, A.l. Homles, Joe C. CampbellAbstract:We demonstrated a high-speed, resonant-cavity InGaAs-InAlAs separate absorption, charge, and multiplication avalanche photodiode (APD) operating at a wavelength of 1.55 /spl mu/m. Due to the resonant-cavity scheme, these APDs exhibit high external quantum efficiency (/spl sim/70%) and a high unity-gain bandwidth of 24 GHz. Utilizing the excellent noise characteristics of a thin InAlAs multiplication region (k/spl sim/0.18), we have also achieved a Gain-Bandwidth Product of 290 GHz. These bandwidth results are believed to be the highest reported values for APDs operating at 1.55 /spl mu/m.
-
Resonant-cavity separate absorption, charge and multiplication avalanche photodiodes with high-speed and high Gain-Bandwidth Product
IEEE Photonics Technology Letters, 1998Co-Authors: H. Nie, K.a. Anselm, C. Lenox, Ping Yuan, Geoffrey S. Kinsey, Ben G. Streetman, Joe C. CampbellAbstract:Previously, it has been shown that resonant-cavity separate-absorption-and-multiplication (SAM) avalanche photodiodes (APD's) exhibit high-speed and high Gain-Bandwidth Products. In this letter, we describe a resonant-cavity SAM APD with an additional charge layer that provides better control of the electric field profile. These devices have achieved bandwidths as high as 33 GHz in the low-gain regime and a record Gain-Bandwidth Product of 290 GHz. We also describe the correlation between the Gain-Bandwidth Product and the doping level in the charge layer. With width dependent ionization coefficients, the current versus voltage (I-V) and Gain-Bandwidth simulations agree well with the measured results and indicate that even higher Gain-Bandwidth should be achievable with an optimized SACM APD structure.
-
high speed resonant cavity separate absorption and multiplication avalanche photodiodes with 130 ghz gain bandwidth Product
Applied Physics Letters, 1997Co-Authors: H. Nie, K.a. Anselm, Ben G. Streetman, S S Murtaza, J C CampbellAbstract:Previously it has been shown that resonant-cavity, separate absorption and multiplication (SAM) avalanche photodiodes (APDs) exhibit high peak external quantum efficiency (∼75%), low dark current, low bias voltage (<15 V), and low multiplication noise (0.2
-
noise characteristics of thin multiplication region gaas avalanche photodiodes
Applied Physics Letters, 1996Co-Authors: K.a. Anselm, Ben G. Streetman, J C CampbellAbstract:It is well known that the gain‐bandwidth Product of an avalanche photodiode can be increased by utilizing a thin multiplication region. Previously, measurements of the excess noise factor of InP/InGaAsP/InGaAs avalanche photodiodes with separate absorption and multiplication regions indicated that this approach could also be employed to reduce the multiplication noise. This letter presents a systematic study of the noise characteristics of GaAs homojunction avalanche photodiodes with different multiplication layer thicknesses. It is demonstrated that there is a definite ‘‘size effect’’ for multiplication regions less than approximately 0.5 μm. A good fit to the experimental data has been achieved using a discrete, nonlocalized model for the impact ionization process.
