The Experts below are selected from a list of 12 Experts worldwide ranked by ideXlab platform
Matragrano M. - One of the best experts on this subject based on the ideXlab platform.
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Nucleation, propagation, electronic levels and elimination of misfit dislocations in III-V semiconductor interfaces. Final report, September 1, 1986--August 31, 1993
Cornell Univ. Ithaca NY (United States), 1995Co-Authors: Ast D.g., Watson G.p., Matragrano M.Abstract:Misfit dislocations in Gallium Arsenides, indium Arsenides, and zinc selenides are discussed. The growth of strained epitaxial layers, isolation and nucleation, thermal stability, and electronic and structural characteristics of misfit dislocations are described
Ast D.g. - One of the best experts on this subject based on the ideXlab platform.
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Nucleation, propagation, electronic levels and elimination of misfit dislocations in III-V semiconductor interfaces. Final report, September 1, 1986--August 31, 1993
Cornell Univ. Ithaca NY (United States), 1995Co-Authors: Ast D.g., Watson G.p., Matragrano M.Abstract:Misfit dislocations in Gallium Arsenides, indium Arsenides, and zinc selenides are discussed. The growth of strained epitaxial layers, isolation and nucleation, thermal stability, and electronic and structural characteristics of misfit dislocations are described
Watson G.p. - One of the best experts on this subject based on the ideXlab platform.
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Nucleation, propagation, electronic levels and elimination of misfit dislocations in III-V semiconductor interfaces. Final report, September 1, 1986--August 31, 1993
Cornell Univ. Ithaca NY (United States), 1995Co-Authors: Ast D.g., Watson G.p., Matragrano M.Abstract:Misfit dislocations in Gallium Arsenides, indium Arsenides, and zinc selenides are discussed. The growth of strained epitaxial layers, isolation and nucleation, thermal stability, and electronic and structural characteristics of misfit dislocations are described
Geck Lotte - One of the best experts on this subject based on the ideXlab platform.
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Scalable Control Electronics for a Spin Based Quantum Computer
Forschungszentrum Jülich GmbH Zentralbibliothek Verlag, 2021Co-Authors: Geck LotteAbstract:In the last years, the topic of quantum computing has received increased attention and arising number of universities, research institutes and companies are exploring it. Onereason for that is the great potential to solve some of today’s practically intractablemathematical problems. The superiority of quantum computers is based on quantum mechanicaleffects in the smallest computation unit, the quantum bit (qubit). The operationand readout of these qubits is complex and very sensitive to noise and other disturbances.For a universal, programmable quantum computer qubit numbers in the order of millionsneed to be operated together which is a great scale up from today’s 53 qubits.For a qubit several dierent implementations exist and one promising candidate type arequbits made out of semiconductor materials. They typically store information in the spinof localized charge carriers. The manipulation of that spin and the corresponding computationis possible through electrical signals. However, due to the operation requirementsof the qubit the electronic-qubit interface is very complex and current control methodsare not feasible for large qubit numbers.The goal of this work is a systematic study of the scalability of integrated controlelectronics based on existing, industrial complementary metal-oxide-semiconductor(CMOS) technology. Included in this goal is also the identication of potential hindrancesto the scalability and necessary subsequent research and the interaction of the electronicswith other parts of the quantum computer. In this work, the so called Gallium-Arsenides-T qubit is used as a reference and most of the technology parameter values take a65 nm CMOS process into account.In a first step, a control concept for the qubits was developed and its scalability judgedon the estimated area and power consumption of the integrated circuit. Next to the65nm technology parameter values, also extrapolated values for smaller nodes wereused. Results show that the main hindrance to scalability is the power consumption ofthe electronics and in order to scale up to millions of qubits technology advancementsare necessary, among others. In the more near term application technologies with lowdigital supply voltage are promising.The second step was to derive a behavioral model not only of the electronic controlconcept but the interface to the rest of the quantum computer and the qubit, as well.Simulations of the complete system show that the electronics concept works as designedand qubit control is possible. The interaction of the different units also highlights thatprocesses critical to the scalability are for example the measurement and the adaption ofpulse sequences to each individual qubit
Khromov Andrey Leonidovich - One of the best experts on this subject based on the ideXlab platform.
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Impulse recording of holograms in cubic photorefractive crystals
1992Co-Authors: Khromov Andrey LeonidovichAbstract:Sillenites, Gallium Arsenides are considered in the paper aiming at the process investigation for the recording of holograms of various physical nature in cubic photorefractive crystals under conditions of the impulse action. As a result the original model of the hologram impulse recording processes in sillenites has been developed. The role of EL2 centres in Gallium arsenide in processes of the hologram recording under low temperatures has been cleared up. The amplitude lattices in crystals of sillenites have been investigated experimentally. Phase non-photorefractive lattices of the marked amplitude have been detected in Gallium arsenide. The paper results may be used for holographic investigations and diagnostics of photorefractive crystals. The paper results may find their field of application in solid-state physics, physics of semiconductors, holographyAvailable from VNTIC / VNTIC - Scientific & Technical Information Centre of RussiaSIGLERURussian Federatio
