Gap Semiconductor

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Jing Cao - One of the best experts on this subject based on the ideXlab platform.

  • surface modification of m bivo4 with wide band Gap Semiconductor biocl to largely improve the visible light induced photocatalytic activity
    Applied Surface Science, 2013
    Co-Authors: Jing Cao, Chunchun Zhou, Haili Lin, Benyan Xu, Shifu Chen
    Abstract:

    Abstract Monoclinic BiVO4 (m-BiVO4) was modified with wide band-Gap Semiconductor BiOCl to construct novel BiOCl/m-BiVO4 heterojunctions. The as-synthesized samples were systematically characterized by X-ray diffraction (XRD), Fourier-transform infrared spectra (FT-IR), scanning electron microscopy (SEM), transmission electron microscopy (TEM), energy dispersive spectrum (EDS) and UV–vis diffuse reflectance spectra (DRS). The photocatalytic activities of BiOCl/m-BiVO4 were evaluated by measuring the degradation of methyl orange, rhodamine B and acid orange II under visible light (λ > 420 nm). The results showed that BiOCl/m-BiVO4 had excellent photocatalytic performance compared with pure m-BiVO4, BiOCl, P25 and N-TiO2, especially 30% BiOCl/m-BiVO4 exhibited the highest photocatalytic activity. The heterojunctions between BiOCl and m-BiVO4 highly separated the photocarriers and yielded enhanced photocatalytic performance of BiOCl/m-BiVO4.

André Gourdon - One of the best experts on this subject based on the ideXlab platform.

  • Single-molecule light emission at room temperature on a wide-band-Gap Semiconductor
    Physical Review B: Condensed Matter and Materials Physics, 2014
    Co-Authors: H. Yang, Andrew J. Mayne, G. Comtet, G. Dujardin, Samuthira Nagarajan, André Gourdon
    Abstract:

    Room-temperature light emission from single chemisorbed perylene based molecules adsorbed on silicon carbide (SiC) is probed by scanning tunnelingmicroscopy (STM).Anewapproach to STM-induced luminescence of a single molecule is explored using a wide-band-Gap Semiconductor to decouple electronically the molecule from the surface. After molecular adsorption, the lowest unoccupied molecular orbital and the highest occupied molecular orbital (HOMO) both lie within the bulk band Gap and below the Fermi level of the substrate. The maximum photon energy of the light emission from the molecule shows a fixed shift of 1.5 eV relative to the maximum energy of the tunnel electrons. This is consistent with the photons being generated by inelastic electron tunneling between the HOMO and the unoccupied electronic states of the STM tip.

  • The paradox of an insulating contact between a chemisorbed molecule and a wide band Gap Semiconductor surface
    Physical Chemistry Chemical Physics, 2011
    Co-Authors: Heejun Yang, Andrew J. Mayne, O. Boudrioua, Geneviève Comtet, Gérald Dujardin, Young Kuk, Ph-h. Sonnet, Louise Stauffer, S. Nagarajan, André Gourdon
    Abstract:

    Controlling the intrinsic optical and electronic properties of a single molecule adsorbed on a surface requires electronic decoupling of some molecular orbitals from the surface states. Scanning tunneling microscopy experiments and density functional theory calculations are used to study a perylene molecule derivative (DHH-PTCDI), adsorbed on the clean 3 × 3 reconstructed wide band Gap silicon carbide surface (SiC(0001)-3 × 3). We find that the LUMO of the adsorbed molecule is invisible in I(V) spectra due to the absence of any surface or bulk states and that the HOMO has a very low saturation current in I(z) spectra. These results present a paradox that the molecular orbitals are electronically isolated from the surface of the wide band Gap Semiconductor even though strong chemical bonds are formed.

Lu Wang - One of the best experts on this subject based on the ideXlab platform.

  • enhancing visible light induced photocatalytic activity by coupling with wide band Gap Semiconductor a case study on bi2wo6 tio2
    Applied Catalysis B-environmental, 2012
    Co-Authors: Jiehui Xu, Songmei Sun, Wenzhong Wang, Lu Wang
    Abstract:

    Abstract The composites of different Semiconductors based on the nanoscale coupling effect for photocatalytic application has been a challenging yet very important research topic. Bi2WO6 and TiO2, the two most extensively studied photocatalysts, were successfully coupled via a facile one-step hydrothermal process. The as-prepared Bi2WO6/TiO2 possessed enhanced visible-light-induced activity in photocatalytic degradation of contaminants in aqueous/gaseous phases compared with those of the sole Bi2WO6 or TiO2. The versatile Bi2WO6/TiO2 photocatalyst also exhibited long-time recyclable ability for the contaminants degradation under visible irradiation (λ > 420 nm) of Xenon lamp or household fluorescent lamp. The photoluminescence and electrochemical impedance spectroscopy are both adopted to analyze the physical properties of the photogenerated carriers and it was found that the separation of photogenerated carriers of Bi2WO6 has been largely promoted after being coupled with wide-band-Gap Semiconductor TiO2. This work could be extended to the design of other composite photocatalyst with the purpose of enhancing activity by coupling suitable wide and narrow band-Gap Semiconductors, which is inspiring for the practical environmental purification.

Shifu Chen - One of the best experts on this subject based on the ideXlab platform.

  • surface modification of m bivo4 with wide band Gap Semiconductor biocl to largely improve the visible light induced photocatalytic activity
    Applied Surface Science, 2013
    Co-Authors: Jing Cao, Chunchun Zhou, Haili Lin, Benyan Xu, Shifu Chen
    Abstract:

    Abstract Monoclinic BiVO4 (m-BiVO4) was modified with wide band-Gap Semiconductor BiOCl to construct novel BiOCl/m-BiVO4 heterojunctions. The as-synthesized samples were systematically characterized by X-ray diffraction (XRD), Fourier-transform infrared spectra (FT-IR), scanning electron microscopy (SEM), transmission electron microscopy (TEM), energy dispersive spectrum (EDS) and UV–vis diffuse reflectance spectra (DRS). The photocatalytic activities of BiOCl/m-BiVO4 were evaluated by measuring the degradation of methyl orange, rhodamine B and acid orange II under visible light (λ > 420 nm). The results showed that BiOCl/m-BiVO4 had excellent photocatalytic performance compared with pure m-BiVO4, BiOCl, P25 and N-TiO2, especially 30% BiOCl/m-BiVO4 exhibited the highest photocatalytic activity. The heterojunctions between BiOCl and m-BiVO4 highly separated the photocarriers and yielded enhanced photocatalytic performance of BiOCl/m-BiVO4.

Vladimir M. Aroutiounian - One of the best experts on this subject based on the ideXlab platform.

  • Wide Gap Semiconductor microwave devices
    Journal of Physics D: Applied Physics, 2007
    Co-Authors: V. V. Buniatyan, Vladimir M. Aroutiounian
    Abstract:

    A review of properties of wide Gap Semiconductor materials such as diamond, diamond- like carbon films, SiC, Gap, GaN and AlGaN/ GaN that are relevant to electronic, optoelectronic and microwave applications is presented. We discuss the latest situation and perspectives based on experimental and theoretical results obtained for wide Gap Semiconductor devices. Parameters are taken from the literature and from some of our theoretical works. The correspondence between theoretical results and parameters of devices is critically analysed.