The Experts below are selected from a list of 12504 Experts worldwide ranked by ideXlab platform
L Forro - One of the best experts on this subject based on the ideXlab platform.
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electrochemical carbon nanotube field effect transistor
Applied Physics Letters, 2001Co-Authors: Michael Kruger, M R Buitelaar, T Nussbaumer, Christian Schonenberger, L ForroAbstract:We explore the electric-field effect of carbon nanotubes (NTs) in electrolytes. Due to the large Gate Capacitance, Fermi energy (EF) shifts of order ±1 V can be induced, enabling to tune NTs from p to n-type. Consequently, large resistance changes are measured. At zero Gate voltage, the NTs are hole-doped in air with |EF|≈0.3–0.5 eV, corresponding to a doping level of ≈1013 cm−2. Hole-doping increases in the electrolyte.
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the electrochemical carbon nanotube field effect transistor
arXiv: Mesoscale and Nanoscale Physics, 2000Co-Authors: M Krueger, M R Buitelaar, T Nussbaumer, C Schoenenberger, L ForroAbstract:We explore the electric-field effect of carbon nanotubes (NTs) in electrolytes. Due to the large Gate Capacitance, Fermi energy shifts of order +/- 1 V can be induced, enabling to tune NTs from p to n-type. Consequently, large resistance changes are measured. At zero Gate voltage the NTs are hole doped in air with E_F ? 0.3-0.5 eV, corresponding to a doping level of ? 10^{13} cm^{-2}. Hole-doping increases in the electrolyte. This hole doping (oxidation) is most likely caused by the adsorption of oxygen in air and cations in the electrolyte.
Toshiki Makimoto - One of the best experts on this subject based on the ideXlab platform.
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Gate Capacitance voltage characteristics of submicron long Gate diamond field effect transistors with hydrogen surface termination
Applied Physics Letters, 2007Co-Authors: Makoto Kasu, Yoshiharu Yamauchi, Kenji Ueda, Toshiki MakimotoAbstract:The radio-frequency characteristics of p-type diamond field-effect transistors with hydrogen surface termination were numerically analyzed using an equivalent-circuit model. From the Gate-source Capacitance (CGS)-voltage (VGS) results extracted from measured s parameters, the authors found a plateau in CGS within a certain VGS range. This means that a two-dimensional hole gas channel forms parallel to the surface and that the channel is separated by a thin energy-barrier layer with an infinite height from the Gate metal. At a high negative VGS, as negative VGS is increased, CGS increases steeply. This results from holes penetrating the energy barrier.
H S P Wong - One of the best experts on this subject based on the ideXlab platform.
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a compact virtual source model for carbon nanotube fets in the sub 10 nm regime part i intrinsic elements
IEEE Transactions on Electron Devices, 2015Co-Authors: Chishuen Lee, Wilfried Haensch, Aaron D Franklin, Eric Pop, H S P WongAbstract:We present a data-calibrated compact model of carbon nanotube (CNT) FETs (CNTFETs) based on the virtual-source (VS) approach, describing the intrinsic current–voltage and charge–voltage characteristics. The features of the model include: 1) carrier VS velocity extracted from experimental devices with Gate lengths down to 15 nm; 2) carrier effective mobility and velocity depending on the CNT diameter; 3) short channel effect such as inverse subthreshold slope degradation and drain-induced barrier lowering depending on the device dimensions; and 4) small-signal Capacitances including the CNT quantum Capacitance effect to account for the decreasing Gate Capacitance at high Gate bias. The CNTFET model captures the dimensional scaling effects and is suitable for technology benchmarking and performance projection at the sub-10-nm technology nodes.
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a compact virtual source model for carbon nanotube fets in the sub 10 nm regime part i intrinsic elements
IEEE Transactions on Electron Devices, 2015Co-Authors: Aaron D Franklin, Wilfried Haensch, H S P WongAbstract:We present a data-calibrated compact model of carbon nanotube (CNT) FETs (CNTFETs) based on the virtual-source (VS) approach, describing the intrinsic current–voltage and charge–voltage characteristics. The features of the model include: 1) carrier VS velocity extracted from experimental devices with Gate lengths down to 15 nm; 2) carrier effective mobility and velocity depending on the CNT diameter; 3) short channel effect such as inverse subthreshold slope degradation and drain-induced barrier lowering depending on the device dimensions; and 4) small-signal Capacitances including the CNT quantum Capacitance effect to account for the decreasing Gate Capacitance at high Gate bias. The CNTFET model captures the dimensional scaling effects and is suitable for technology benchmarking and performance projection at the sub-10-nm technology nodes.
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modeling and analysis of planar Gate electrostatic Capacitance of 1 d fet with multiple cylindrical conducting channels
IEEE Transactions on Electron Devices, 2007Co-Authors: Jie Deng, H S P WongAbstract:This paper presents accurate analytical models to calculate the electrostatic Gate Capacitance of 1-D field-effect transistors (FETs) with multiple cylindrical conducting channels. Gate Capacitance Cgg is decomposed into three major components: 1) Capacitance Cgc between the Gate and the parallel cylindrical conducting channels (the number of channels ges 1) in dual-layer dielectric materials; 2) outer fringe Capacitance Cof between the Gate and the source/drain cylinder conductors; and 3) coupling Capacitance Cgtg between the adjacent Gates. A realistic planar-Gate structure with high-k Gate dielectric material is considered in this paper, including the screening effect of the parallel conductors and different dielectric materials on Capacitance. An accuracy of 10% is achieved from the analytic models, compared with the values that were simulated by 3-D numerical field solvers. Using a simple analytical expression for the Gate delay that includes the parasitic Capacitance and screening of multiple parallel conducting channels, this paper also shows that both increasing the number of channels per Gate and reducing the Gate height are effective ways to improve device speed.
M R Buitelaar - One of the best experts on this subject based on the ideXlab platform.
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nanoparticle single electron transistor with metal bridged top Gate and nanogap electrodes
Applied Physics Letters, 2011Co-Authors: Yasuo Azuma, M R Buitelaar, Seiichi Suzuki, Kosuke Maeda, Norio Okabayashi, Daisuke Tanaka, Masanori Sakamoto, Toshiharu Teranishi, C G Smith, Yutaka MajimaAbstract:Au nanoparticle single-electron transistors with metal-bridged top-Gates and nanogap electrodes were fabricated using two consecutive electron beam lithography and electroless Au plating steps. The metal-bridged top-Gate electrodes were suspended above electroless Au plated nanogap electrodes. Au nanoparticles (5.2 nm in diameter) were chemisorbed between the nanogap electrodes after top-Gate fabrication. Clear Coulomb diamonds were observed at 9 K. The Gate Capacitance Cg of the top-Gate electrodes was 99 zF, which is 10 times larger than that of a similar device with only side-Gate electrodes.
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electrochemical carbon nanotube field effect transistor
Applied Physics Letters, 2001Co-Authors: Michael Kruger, M R Buitelaar, T Nussbaumer, Christian Schonenberger, L ForroAbstract:We explore the electric-field effect of carbon nanotubes (NTs) in electrolytes. Due to the large Gate Capacitance, Fermi energy (EF) shifts of order ±1 V can be induced, enabling to tune NTs from p to n-type. Consequently, large resistance changes are measured. At zero Gate voltage, the NTs are hole-doped in air with |EF|≈0.3–0.5 eV, corresponding to a doping level of ≈1013 cm−2. Hole-doping increases in the electrolyte.
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the electrochemical carbon nanotube field effect transistor
arXiv: Mesoscale and Nanoscale Physics, 2000Co-Authors: M Krueger, M R Buitelaar, T Nussbaumer, C Schoenenberger, L ForroAbstract:We explore the electric-field effect of carbon nanotubes (NTs) in electrolytes. Due to the large Gate Capacitance, Fermi energy shifts of order +/- 1 V can be induced, enabling to tune NTs from p to n-type. Consequently, large resistance changes are measured. At zero Gate voltage the NTs are hole doped in air with E_F ? 0.3-0.5 eV, corresponding to a doping level of ? 10^{13} cm^{-2}. Hole-doping increases in the electrolyte. This hole doping (oxidation) is most likely caused by the adsorption of oxygen in air and cations in the electrolyte.
Makoto Kasu - One of the best experts on this subject based on the ideXlab platform.
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rf equivalent circuit analysis of p type diamond field effect transistors with hydrogen surface termination
IEICE Transactions on Electronics, 2008Co-Authors: Makoto Kasu, Kenji Ueda, Hiroyuki Kageshima, Yoshiharu YamauchiAbstract:On the basis of the RF characteristics of p-type diamond field-effect transistors (FETs) with hydrogen surface termination, we establish an equivalent circuit (EQC) model. From comparisons of three cases we reveal that to represent the device performance in the EQC, the source, Gate, and drain resistance should be considered but that the Gate-source and Gate-drain resistance can be ignored. The features of diamond FETs are (1) a plateau of the Gate Capacitance in a certain Gate voltage range. (2) maximum fT and fMAX cut-off frequencies near the threshold Gate voltage, and (3) a high fMAX/fT ratio∼3.8. We discuss these features in terms of the energy barrier between the Gate metal and the two-dimensional hole channel and drift region below the Gate.
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Gate Capacitance voltage characteristics of submicron long Gate diamond field effect transistors with hydrogen surface termination
Applied Physics Letters, 2007Co-Authors: Makoto Kasu, Yoshiharu Yamauchi, Kenji Ueda, Toshiki MakimotoAbstract:The radio-frequency characteristics of p-type diamond field-effect transistors with hydrogen surface termination were numerically analyzed using an equivalent-circuit model. From the Gate-source Capacitance (CGS)-voltage (VGS) results extracted from measured s parameters, the authors found a plateau in CGS within a certain VGS range. This means that a two-dimensional hole gas channel forms parallel to the surface and that the channel is separated by a thin energy-barrier layer with an infinite height from the Gate metal. At a high negative VGS, as negative VGS is increased, CGS increases steeply. This results from holes penetrating the energy barrier.