The Experts below are selected from a list of 243 Experts worldwide ranked by ideXlab platform
Yasuhiko Benino - One of the best experts on this subject based on the ideXlab platform.
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Patterning of c-axis-oriented Ba_2TiX_2O_8 (X = Si, Ge) Crystal lines in glass by laser irradiation and their second-order optical nonlinearities
Journal of Materials Research, 2008Co-Authors: Tsuyoshi Honma, Takayuki Komatsu, Yasuhiko BeninoAbstract:Crystal lines consisting of nonlinear optical fresnoite-type Ba_2Ti X _2O_8 ( X = Si, Ge) Crystals are patterned on the surface of CuO (1 mol%)-doped 33.3BaO–16.7TiO_2–50SiO_2 or–50GeO_2 glasses by continuous-wave (cw) neodymium:yttrium aluminum garnet (Nd:YAG) laser (wavelength 1064 nm) irradiation. It is confirmed from polarized micro-Raman scattering spectra that the c axis of Ba_2TiX_2O_8 Crystals in the lines are oriented along the laser-scanning direction (i.e., parallel to the lines). The azimuthal dependences of second-harmonic (SH) intensities for the Crystal lines indicate unique frinGe patterns, and the c -axis orientation of the Crystals is supported from the analyses of frinGe patterns. The value of the d _31/ d _33 ratio is found to be ∼23 for Ba_2TiSi_2O_8 (BTS) Crystal lines, and ∼13 for Ba_2TiGe_2O_8 (BTG) Crystal lines, where d _31 and d _33 are the principal d tensors for the second-order optical nonlinearity of fresnoite-type Crystals.
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Patterning of c-axis-oriented Ba2TiX2O8 (X = Si, Ge) Crystal lines in glass by laser irradiation and their second-order optical nonlinearities
Journal of Materials Research, 2008Co-Authors: Tsuyoshi Honma, Takayuki Komatsu, Yasuhiko BeninoAbstract:Crystal lines consisting of nonlinear optical fresnoite-type Ba2TiX2O8 (X = Si, Ge) Crystals are patterned on the surface of CuO (1 mol%)-doped 33.3BaO–16.7TiO2–50SiO2 or –50GeO2 glasses by continuous-wave (cw) neodymium:yttrium aluminum garnet (Nd:YAG) laser (wavelength 1064 nm) irradiation. It is confirmed from polarized micro-Raman scattering spectra that the c axis of Ba2TiX2O8 Crystals in the lines are oriented along the laser-scanning direction (i.e., parallel to the lines). The azimuthal dependences of second-harmonic (SH) intensities for the Crystal lines indicate unique frinGe patterns, and the c-axis orientation of the Crystals is supported from the analyses of frinGe patterns. The value of the d31/d33 ratio is found to be ∼23 for Ba2TiSi2O8 (BTS) Crystal lines, and ∼13 for Ba2TiGe2O8 (BTG) Crystal lines, where d31 and d33 are the principal d tensors for the second-order optical nonlinearity of fresnoite-type Crystals.
Tsuyoshi Honma - One of the best experts on this subject based on the ideXlab platform.
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Patterning of c-axis-oriented Ba_2TiX_2O_8 (X = Si, Ge) Crystal lines in glass by laser irradiation and their second-order optical nonlinearities
Journal of Materials Research, 2008Co-Authors: Tsuyoshi Honma, Takayuki Komatsu, Yasuhiko BeninoAbstract:Crystal lines consisting of nonlinear optical fresnoite-type Ba_2Ti X _2O_8 ( X = Si, Ge) Crystals are patterned on the surface of CuO (1 mol%)-doped 33.3BaO–16.7TiO_2–50SiO_2 or–50GeO_2 glasses by continuous-wave (cw) neodymium:yttrium aluminum garnet (Nd:YAG) laser (wavelength 1064 nm) irradiation. It is confirmed from polarized micro-Raman scattering spectra that the c axis of Ba_2TiX_2O_8 Crystals in the lines are oriented along the laser-scanning direction (i.e., parallel to the lines). The azimuthal dependences of second-harmonic (SH) intensities for the Crystal lines indicate unique frinGe patterns, and the c -axis orientation of the Crystals is supported from the analyses of frinGe patterns. The value of the d _31/ d _33 ratio is found to be ∼23 for Ba_2TiSi_2O_8 (BTS) Crystal lines, and ∼13 for Ba_2TiGe_2O_8 (BTG) Crystal lines, where d _31 and d _33 are the principal d tensors for the second-order optical nonlinearity of fresnoite-type Crystals.
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Patterning of c-axis-oriented Ba2TiX2O8 (X = Si, Ge) Crystal lines in glass by laser irradiation and their second-order optical nonlinearities
Journal of Materials Research, 2008Co-Authors: Tsuyoshi Honma, Takayuki Komatsu, Yasuhiko BeninoAbstract:Crystal lines consisting of nonlinear optical fresnoite-type Ba2TiX2O8 (X = Si, Ge) Crystals are patterned on the surface of CuO (1 mol%)-doped 33.3BaO–16.7TiO2–50SiO2 or –50GeO2 glasses by continuous-wave (cw) neodymium:yttrium aluminum garnet (Nd:YAG) laser (wavelength 1064 nm) irradiation. It is confirmed from polarized micro-Raman scattering spectra that the c axis of Ba2TiX2O8 Crystals in the lines are oriented along the laser-scanning direction (i.e., parallel to the lines). The azimuthal dependences of second-harmonic (SH) intensities for the Crystal lines indicate unique frinGe patterns, and the c-axis orientation of the Crystals is supported from the analyses of frinGe patterns. The value of the d31/d33 ratio is found to be ∼23 for Ba2TiSi2O8 (BTS) Crystal lines, and ∼13 for Ba2TiGe2O8 (BTG) Crystal lines, where d31 and d33 are the principal d tensors for the second-order optical nonlinearity of fresnoite-type Crystals.
Seiichi Miyazaki - One of the best experts on this subject based on the ideXlab platform.
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Formation of ultrathin segregated-Ge Crystal on Al/Ge(111) surface
Japanese Journal of Applied Physics, 2020Co-Authors: Masato Kobayashi, Akio Ohta, Masashi Kurosawa, Masaaki Araidai, Noriyuki Taoka, Tomohiro Simizu, Mitsuhisa Ikeda, Katsunori Makihara, Seiichi MiyazakiAbstract:We have investigated the formation of an ultrathin Ge Crystal layer by vacuum annealing of the Al/Ge(111) structure. An hetero-epitaxial Al layer was found to be grown on a Ge(111) substrate by control of Al thickness and deposition rate during thermal evaporation, which the Al surface becomes the template of Crystallographic structure of a segregated Ge layer. Then, surface flattening and Ge segregation of the Al/Ge(111) structure by vacuum annealing were evaluated, and the formation of ultrathin segregated-Ge Crystals with a thickness below 1 nm on the hetero-epitaxial Al surface have been demonstrated.
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formation of ultrathin segregated Ge Crystal on al Ge 111 surface
Japanese Journal of Applied Physics, 2020Co-Authors: Masato Kobayashi, Akio Ohta, Masashi Kurosawa, Masaaki Araidai, Noriyuki Taoka, Tomohiro Simizu, Mitsuhisa Ikeda, Katsunori Makihara, Seiichi MiyazakiAbstract:We have investigated the formation of an ultrathin Ge Crystal layer by vacuum annealing of the Al/Ge(111) structure. An hetero-epitaxial Al layer was found to be grown on a Ge(111) substrate by control of Al thickness and deposition rate during thermal evaporation, which the Al surface becomes the template of Crystallographic structure of a segregated Ge layer. Then, surface flattening and Ge segregation of the Al/Ge(111) structure by vacuum annealing were evaluated, and the formation of ultrathin segregated-Ge Crystals with a thickness below 1 nm on the hetero-epitaxial Al surface have been demonstrated.
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growth of two dimensional Ge Crystal by annealing of heteroepitaxial ag Ge 111 under n2 ambient
Japanese Journal of Applied Physics, 2018Co-Authors: Koichi Ito, Akio Ohta, Masashi Kurosawa, Masaaki Araidai, Mitsuhisa Ikeda, Katsunori Makihara, Seiichi MiyazakiAbstract:The growth of a two-dimensional Crystal of Ge atoms on an atomically flat Ag(111) surface has been demonstrated by the thermal annealing of a heteroepitaxial Ag/Ge structure in N2 ambient at atmospheric pressure. The surface morphology and chemical bonding features of heteroepitaxial Ag(111) grown on wet-cleaned Ge(111) after annealing at different temperatures and for various times have been systematically investigated to control the surface segregation of Ge atoms and the planarization of the heteroepitaxial Ag(111) surface.
Takayuki Komatsu - One of the best experts on this subject based on the ideXlab platform.
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Patterning of c-axis-oriented Ba_2TiX_2O_8 (X = Si, Ge) Crystal lines in glass by laser irradiation and their second-order optical nonlinearities
Journal of Materials Research, 2008Co-Authors: Tsuyoshi Honma, Takayuki Komatsu, Yasuhiko BeninoAbstract:Crystal lines consisting of nonlinear optical fresnoite-type Ba_2Ti X _2O_8 ( X = Si, Ge) Crystals are patterned on the surface of CuO (1 mol%)-doped 33.3BaO–16.7TiO_2–50SiO_2 or–50GeO_2 glasses by continuous-wave (cw) neodymium:yttrium aluminum garnet (Nd:YAG) laser (wavelength 1064 nm) irradiation. It is confirmed from polarized micro-Raman scattering spectra that the c axis of Ba_2TiX_2O_8 Crystals in the lines are oriented along the laser-scanning direction (i.e., parallel to the lines). The azimuthal dependences of second-harmonic (SH) intensities for the Crystal lines indicate unique frinGe patterns, and the c -axis orientation of the Crystals is supported from the analyses of frinGe patterns. The value of the d _31/ d _33 ratio is found to be ∼23 for Ba_2TiSi_2O_8 (BTS) Crystal lines, and ∼13 for Ba_2TiGe_2O_8 (BTG) Crystal lines, where d _31 and d _33 are the principal d tensors for the second-order optical nonlinearity of fresnoite-type Crystals.
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Patterning of c-axis-oriented Ba2TiX2O8 (X = Si, Ge) Crystal lines in glass by laser irradiation and their second-order optical nonlinearities
Journal of Materials Research, 2008Co-Authors: Tsuyoshi Honma, Takayuki Komatsu, Yasuhiko BeninoAbstract:Crystal lines consisting of nonlinear optical fresnoite-type Ba2TiX2O8 (X = Si, Ge) Crystals are patterned on the surface of CuO (1 mol%)-doped 33.3BaO–16.7TiO2–50SiO2 or –50GeO2 glasses by continuous-wave (cw) neodymium:yttrium aluminum garnet (Nd:YAG) laser (wavelength 1064 nm) irradiation. It is confirmed from polarized micro-Raman scattering spectra that the c axis of Ba2TiX2O8 Crystals in the lines are oriented along the laser-scanning direction (i.e., parallel to the lines). The azimuthal dependences of second-harmonic (SH) intensities for the Crystal lines indicate unique frinGe patterns, and the c-axis orientation of the Crystals is supported from the analyses of frinGe patterns. The value of the d31/d33 ratio is found to be ∼23 for Ba2TiSi2O8 (BTS) Crystal lines, and ∼13 for Ba2TiGe2O8 (BTG) Crystal lines, where d31 and d33 are the principal d tensors for the second-order optical nonlinearity of fresnoite-type Crystals.
Henk J. Busscher - One of the best experts on this subject based on the ideXlab platform.
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Structured free-water clusters near lubricating surfaces are essential in water-based lubrication
Journal of the Royal Society Interface, 2016Co-Authors: Jiapeng Hou, Deepak H. Veeregowda, Joop De Vries, Henny C. Van Der Mei, Henk J. BusscherAbstract:Water-based lubrication provides cheap and environmentally friendly lubrication and, although hydrophilic surfaces are preferred in water-based lubrication, often lubricating surfaces do not retain water molecules during shear. We show here that hydrophilic (42° water contact angle) quartz surfaces facilitate water-based lubrication to the same extent as more hydrophobic Si Crystal surfaces (61°), while lubrication by hydrophilic Ge Crystal surfaces (44°) is best. Thus surface hydrophilicity is not sufficient for water-based lubrication. Surface-thermodynamic analyses demonstrated that all surfaces, regardless of their water-based lubrication, were predominantly electron donating, implying water binding with their hydroGen groups. X-ray photoelectron spectroscopy showed that Ge Crystal surfaces providing optimal lubrication consisted of a mixture of -O and =O functionalities, while Si Crystal and quartz surfaces solely possessed -O functionalities. Comparison of infrared absorption bands of the Crystals in water indicated fewer bound-water layers on hydrophilic Ge than on hydrophobic Si Crystal surfaces, while absorption bands for free water on the Ge Crystal surface indicated a much more pronounced presence of structured, free-water clusters near the Ge Crystal than near Si Crystal surfaces. Accordingly, we conclude that the presence of structured, free-water clusters is essential for water-based lubrication. The prevalence of structured water clusters can be regulated by adjusting the ratio between surface electron-donating and electron-accepting groups and between -O and =O functionalities.
