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D L Kwong - One of the best experts on this subject based on the ideXlab platform.
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effect of the inversion layer on the electrical characterization of pt Germanide n ge 001 schottky contacts
Applied Physics Letters, 2006Co-Authors: H B Yao, Sungjoo Lee, D Z Chi, D L KwongAbstract:Schottky contacts of Pt Germanide films formed on n-Ge(001) through solid-state reaction between Pt and Ge(001) via rapid thermal annealing were investigated. Almost identical effective barrier heights of ∼0.619–0.626eV were obtained for PtGe∕n-Ge(001), Pt2Ge3∕n−Ge(001), and PtGe2∕n-Ge(001) Schottky contacts from current-voltage measurements. From the effective barrier height values, actual barrier heights of ∼0.653–0.663eV were determined by taking into account the image force induced barrier lowering in the presence of strong inversion layers at the interfaces. The actual barrier height values obtained were further validated by the good agreement between experimental and simulation results for capacitance-voltage characterization.
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pt Germanide schottky source drain germanium p mosfet with hfo sub 2 gate dielectric and tan gate electrode
IEEE Electron Device Letters, 2006Co-Authors: Sungjoo Lee, H B Yao, D Z Chi, D L KwongAbstract:Schottky source/drain (S/D) transistors using Pt-Germanide and HfO/sub 2//TaN gate stack are fabricated on Ge-substrate with conventional self-aligned top-gate process. It was found that Pt-Germanide provides promising properties for p-MOSFET: negative effective hole barrier height, low resistivity, atomically sharp junction with Ge with good morphology. Pt-Germanide Ge-p-MOSFETs showed well-behaved I/sub D/-V/sub D/ characteristics and much suppressed I/sub off/ compared to Ni-Germanide and conventional heavily doped S/D MOSFETs.
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metal Germanide schottky source drain transistor on germanium substrate for future cmos technology
Thin Solid Films, 2006Co-Authors: H B Yao, Sungjoo Lee, D Z Chi, D L KwongAbstract:Abstract In this study, we survey Schottky diode property of both p-metal (Ni) Germanide and n-metal (Zr, Er and Yb) Germanide in contact with Ge (100). Our experimental results demonstrate that Φp values obtained for NiGe/n-Ge is − 0.07 eV, and Φn values for YbGe/p-Ge is 0.139 eV, the lowest hole barrier so far reported. In addition, NiGe Schottky source/drain p-MOSFET with HfO2/TaN gate stack and AlN/SiO2 stacked spacer were fabricated and measured. The drain current at VD = VG − Vth = − 1.5 V is ∼ 4.0 μA/μm of the gate length LG = 8 μm device. The Ion/Ioff ratio is ∼ 103, and sub-threshold swing is 137 mV/dec.
Kei Inumaru - One of the best experts on this subject based on the ideXlab platform.
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high pressure synthesis and electronic structure of a new superconducting strontium Germanide srge3 containing ge2 dumbbells
Inorganic Chemistry, 2015Co-Authors: Takuya Nishikawa, Hiroshi Fukuoka, Kei InumaruAbstract:We obtained a new strontium Germanide (SrGe3) by high-pressure and high-temperature synthesis. It was prepared at 13 GPa and 1100 °C. The space group and cell constants are I4/mmm (No. 139), a = 7.7800(8) A, c = 12.0561(13) A, and V = 729.74(17) A3. SrGe3 crystallizes in the CaSi3 structure composed of Ge–Ge dumbbells and Sr2+ ions. SrGe3 is a type II superconductor with a transition temperature of 6.0 K.
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High-Pressure Synthesis and Electronic Structure of a New Superconducting Strontium Germanide (SrGe3) Containing Ge2 Dumbbells
2015Co-Authors: Takuya Nishikawa, Hiroshi Fukuoka, Kei InumaruAbstract:We obtained a new strontium Germanide (SrGe3) by high-pressure and high-temperature synthesis. It was prepared at 13 GPa and 1100 °C. The space group and cell constants are I4/mmm (No. 139), a = 7.7800(8) Å, c = 12.0561(13) Å, and V = 729.74(17) Å3. SrGe3 crystallizes in the CaSi3 structure composed of Ge–Ge dumbbells and Sr2+ ions. SrGe3 is a type II superconductor with a transition temperature of 6.0 K
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high pressure synthesis and superconductivity of a new binary barium Germanide bage3
Inorganic Chemistry, 2011Co-Authors: Hiroshi Fukuoka, Yusuke Tomomitsu, Kei InumaruAbstract:A new binary barium Germanide BaGe3 was prepared by high-pressure and high-temperature reactions using a Kawai type multi-anvil press. It crystallizes in a hexagonal unit cell with a = 6.814(1) A, ...
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high pressure synthesis and superconductivity of a new binary lanthanum Germanide lage3 with triangular ge3 cluster units
Inorganic Chemistry, 2011Co-Authors: Hiroshi Fukuoka, Koichiro Suekuni, Takahiro Onimaru, Kei InumaruAbstract:We prepared a new binary lanthanum Germanide, LaGe3, under high-pressure and high-temperature conditions (3−12 GPa, 500−1200 °C). It crystallizes in the BaPb3 structure (the space group R3m) with ...
Seok-hee Lee - One of the best experts on this subject based on the ideXlab platform.
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Enhanced Device Performance of Germanium Nanowire Junctionless (GeNW-JL) MOSFETs by Germanide Contact Formation with Ar Plasma Treatment
ACS Applied Materials & Interfaces, 2014Co-Authors: Young Gwang Yoon, Tae Kyun Kim, Inchan Hwang, Hyunseung Lee, Byeong Woon Hwang, Jung-min Moon, Yu Jin Seo, Sukwon Lee, Seok-hee LeeAbstract:In this study, germanium nanowire junctionless (GeNW-JL) metal-oxide-semiconductor-field-effect-transistors (MOSFETs) exhibited enhanced electrical performance with low source/drain (S/D) contact resistance under the influence of Ar plasma treatment on the contact regions. We found that the transformation of the surface oxide states by Ar plasma treatment affected the S/D contact resistance. With Ar plasma treatment, the germanium dioxide on the GeNW surface was effectively removed and increased oxygen vacancies were formed in the suboxide on the GeNW, whose germanium-enrichment surface was obtained to form a Germanide contact at low temperature. After a rapid thermal annealing process, Ni-Germanide contacts were formed on the Ar-plasma-treated GeNW surface. Ni-Germanide contact resistance was improved by more than an order of magnitude compared to that of the other devices without Ni-Germanide contact. Moreover, the peak field effect mobility value of the GeNW-JL MOSFETs was dramatically improved from 15...
D Z Chi - One of the best experts on this subject based on the ideXlab platform.
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phase and texture of er Germanide formed on ge 001 through a solid state reaction
Journal of The Electrochemical Society, 2007Co-Authors: S L Liew, B Balakrisnan, O Thomas, D Z ChiAbstract:The phase and texture of of Er-Germanide formed on Ge(001) through a solid-state reaction between Er thin films and Ge(001) via rapid thermal annealing (300-600°C) were investigated. It was found that amorphous ErGe 1.2 forms at 300°C, followed by the formation of AlB 2 hexagonal ErGe 1.5 at 400-500°C and then orthorhombic ErGe 1.8 at 600°C. X-ray diffraction pole figure measurement revealed that the ErGe 1.5 5 films formed at 400-500°C consist predominantly of epitaxial grains with an orientation relationship of ErGe 1.5 (1100)[0001]//Ge(001)[011], although the presence of a considerable amount of epitaxial grains with an orientation relationship of ErGe 1.5 (1012)[0110]//Ge(001)[010] was also observed in the film formed at 400°C. The Germanide film formed at 600°C was found to consist of randomly orientated orthorhombic ErGe 1.8 grains. Among the three different Germanide phases, ErGe 1.5 showed minimum resistivity values as low as ∼ 19 μΩ cm.
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effect of the inversion layer on the electrical characterization of pt Germanide n ge 001 schottky contacts
Applied Physics Letters, 2006Co-Authors: H B Yao, Sungjoo Lee, D Z Chi, D L KwongAbstract:Schottky contacts of Pt Germanide films formed on n-Ge(001) through solid-state reaction between Pt and Ge(001) via rapid thermal annealing were investigated. Almost identical effective barrier heights of ∼0.619–0.626eV were obtained for PtGe∕n-Ge(001), Pt2Ge3∕n−Ge(001), and PtGe2∕n-Ge(001) Schottky contacts from current-voltage measurements. From the effective barrier height values, actual barrier heights of ∼0.653–0.663eV were determined by taking into account the image force induced barrier lowering in the presence of strong inversion layers at the interfaces. The actual barrier height values obtained were further validated by the good agreement between experimental and simulation results for capacitance-voltage characterization.
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pt Germanide schottky source drain germanium p mosfet with hfo sub 2 gate dielectric and tan gate electrode
IEEE Electron Device Letters, 2006Co-Authors: Sungjoo Lee, H B Yao, D Z Chi, D L KwongAbstract:Schottky source/drain (S/D) transistors using Pt-Germanide and HfO/sub 2//TaN gate stack are fabricated on Ge-substrate with conventional self-aligned top-gate process. It was found that Pt-Germanide provides promising properties for p-MOSFET: negative effective hole barrier height, low resistivity, atomically sharp junction with Ge with good morphology. Pt-Germanide Ge-p-MOSFETs showed well-behaved I/sub D/-V/sub D/ characteristics and much suppressed I/sub off/ compared to Ni-Germanide and conventional heavily doped S/D MOSFETs.
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metal Germanide schottky source drain transistor on germanium substrate for future cmos technology
Thin Solid Films, 2006Co-Authors: H B Yao, Sungjoo Lee, D Z Chi, D L KwongAbstract:Abstract In this study, we survey Schottky diode property of both p-metal (Ni) Germanide and n-metal (Zr, Er and Yb) Germanide in contact with Ge (100). Our experimental results demonstrate that Φp values obtained for NiGe/n-Ge is − 0.07 eV, and Φn values for YbGe/p-Ge is 0.139 eV, the lowest hole barrier so far reported. In addition, NiGe Schottky source/drain p-MOSFET with HfO2/TaN gate stack and AlN/SiO2 stacked spacer were fabricated and measured. The drain current at VD = VG − Vth = − 1.5 V is ∼ 4.0 μA/μm of the gate length LG = 8 μm device. The Ion/Ioff ratio is ∼ 103, and sub-threshold swing is 137 mV/dec.
Jung-min Moon - One of the best experts on this subject based on the ideXlab platform.
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formation of low resistivity nickel Germanide using atomic layer deposited nickel thin film
IEEE Transactions on Electron Devices, 2017Co-Authors: Hyun Jun Ahn, Jung-min Moon, Yu Jin Seo, Tae In Lee, Choongki Kim, Wan Sik Hwang, Byung Jin ChoAbstract:Nickel Germanide (NiGe) was formed from atomic layer deposition (ALD) Ni on Ge and a subequent annealing process; the Ni film with low resistivity ( $34~\mu \Omega \cdot \text {cm}$ ) at 15 nm was obtained by N2 + H2 plasma treatment after Ni precursor injection. The formed NiGe film showed low specific contact resistivity ( $\rho _{c})$ values of 9.01 $\mu \Omega \cdot \text {cm}^{2}$ for an NiGe/n+Ge contact and 3.61 $\mu \Omega \cdot \text {cm}^{2}$ for an NiGe/p+Ge contact. These values were comparable to those obtained using sputtered Ni. In addition, the ALD process-based NiGe showed excellent thermal/electrical stability up to 600 °C.
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Enhanced Device Performance of Germanium Nanowire Junctionless (GeNW-JL) MOSFETs by Germanide Contact Formation with Ar Plasma Treatment
ACS Applied Materials & Interfaces, 2014Co-Authors: Young Gwang Yoon, Tae Kyun Kim, Inchan Hwang, Hyunseung Lee, Byeong Woon Hwang, Jung-min Moon, Yu Jin Seo, Sukwon Lee, Seok-hee LeeAbstract:In this study, germanium nanowire junctionless (GeNW-JL) metal-oxide-semiconductor-field-effect-transistors (MOSFETs) exhibited enhanced electrical performance with low source/drain (S/D) contact resistance under the influence of Ar plasma treatment on the contact regions. We found that the transformation of the surface oxide states by Ar plasma treatment affected the S/D contact resistance. With Ar plasma treatment, the germanium dioxide on the GeNW surface was effectively removed and increased oxygen vacancies were formed in the suboxide on the GeNW, whose germanium-enrichment surface was obtained to form a Germanide contact at low temperature. After a rapid thermal annealing process, Ni-Germanide contacts were formed on the Ar-plasma-treated GeNW surface. Ni-Germanide contact resistance was improved by more than an order of magnitude compared to that of the other devices without Ni-Germanide contact. Moreover, the peak field effect mobility value of the GeNW-JL MOSFETs was dramatically improved from 15...