The Experts below are selected from a list of 1038 Experts worldwide ranked by ideXlab platform

Tadatomo Suga - One of the best experts on this subject based on the ideXlab platform.

  • Novel sequential plasma activation method for direct Glass Bonding
    2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D), 2017
    Co-Authors: Ran He, Akira Yamauchi, Tadatomo Suga
    Abstract:

    We report a newly developed sequential plasma activation Bonding (SPAB) process for direct Bonding between quartz Glass wafers. The novel SPAB method in the present paper employed RIE N2 plasma activation followed by or instead of the O2 plasma activation before the N radical activation. Experimental results are reported and discussed with comparison with the conventional SPAB process.

  • room temperature wafer level Glass Glass Bonding
    Sensors and Actuators A-physical, 2006
    Co-Authors: M M R Howlader, Satoru Suehara, Tadatomo Suga
    Abstract:

    Abstract The findings of this study report the Bonding of Glass/Glass wafers by using the surface activated Bonding (SAB) method at room temperature (RT) without heating. In order to bond, the Glass wafers were activated by a sequential plasma activation process, in which the wafers were cleaned with reactive ion etching (RIE) oxygen radio frequency (rf) plasma and nitrogen radical microwave (MW) plasma one after another and then contacted under hand-applied pressure followed by cold rolling under 20 kg load in atmospheric air. High Bonding strength for Glass/Glass was achieved. Paramount influence of N 2 radical MW plasma on the adhesion enhancement of silicon/silicon Bonding motivated the investigation of the N 2 radical MW plasma relationship with the Bonding strength of Glass/Glass. A considerable influence of N 2 pressure on the Bonding strength was not observed except in N 2 gas pressure of 30 Pa, which might be due to the deBonding between glue and fixture used for tensile pulling test. No significant effect of OH density of Glass wafers on the Bonding strength was found below 400 °C. The result was evident from 400 °C and it was about twofold higher at 600 °C than that of RT to 400 °C. This result indicated that the sequential process Bonding mechanism was consisting of long bridges of hydrogen Bonding by water molecules. Significant environmental influence on the Bonding strength was found and which could be correlated with OH molecules of Glass wafers.

  • Room temperature wafer level Glass/Glass Bonding
    Sensors and Actuators A-physical, 2006
    Co-Authors: M M R Howlader, Satoru Suehara, Tadatomo Suga
    Abstract:

    Abstract The findings of this study report the Bonding of Glass/Glass wafers by using the surface activated Bonding (SAB) method at room temperature (RT) without heating. In order to bond, the Glass wafers were activated by a sequential plasma activation process, in which the wafers were cleaned with reactive ion etching (RIE) oxygen radio frequency (rf) plasma and nitrogen radical microwave (MW) plasma one after another and then contacted under hand-applied pressure followed by cold rolling under 20 kg load in atmospheric air. High Bonding strength for Glass/Glass was achieved. Paramount influence of N 2 radical MW plasma on the adhesion enhancement of silicon/silicon Bonding motivated the investigation of the N 2 radical MW plasma relationship with the Bonding strength of Glass/Glass. A considerable influence of N 2 pressure on the Bonding strength was not observed except in N 2 gas pressure of 30 Pa, which might be due to the deBonding between glue and fixture used for tensile pulling test. No significant effect of OH density of Glass wafers on the Bonding strength was found below 400 °C. The result was evident from 400 °C and it was about twofold higher at 600 °C than that of RT to 400 °C. This result indicated that the sequential process Bonding mechanism was consisting of long bridges of hydrogen Bonding by water molecules. Significant environmental influence on the Bonding strength was found and which could be correlated with OH molecules of Glass wafers.

Dapeng Chen - One of the best experts on this subject based on the ideXlab platform.

K. Najafi - One of the best experts on this subject based on the ideXlab platform.

  • vacuum packaging technology using localized aluminum silicon to Glass Bonding
    IEEE\ ASME Journal of Microelectromechanical Systems, 2002
    Co-Authors: Yu-ting Cheng, K. Najafi, C.t. Nguyen
    Abstract:

    A Glass vacuum package based on localized aluminum/silicon-to-Glass Bonding has been successfully demonstrated. A constant heat flux model shows that heating can be confined locally in the dielectric layer underneath a microheater as long as the width of the microheater and the thickness of silicon substrate are much smaller than the die size and a good heat sink is placed underneath the silicon substrate. With 3.4 W heating power, /spl sim/0.2 MPa applied contact pressure and 90 min wait time before Bonding, vacuum encapsulation at 25 mtorr (/spl sim/3.33 Pa) can be achieved. Folded-beam comb drive /spl mu/-resonators are encapsulated and used as pressure monitors. Long-term testing of vacuum-packaged p-resonators with a Quality Factor (Q) of 2500 has demonstrated stable operation after 69 weeks. A /spl mu/-resonator with a Q factor of /spl sim/9600 has been vacuum encapsulated and shown to be stable after 56 weeks.

  • Vacuum packaging technology using localized aluminum/silicon-to-Glass Bonding
    Journal of Microelectromechanical Systems, 2002
    Co-Authors: Y.t. Cheng, K. Najafi, C.t. Nguyen
    Abstract:

    A Glass vacuum package based on localized aluminum/silicon-to-Glass Bonding has been successfully demonstrated. A constant heat flux model shows that heating can be confined locally in the dielectric layer underneath a microheater as long as the width of the microheater and the thickness of silicon substrate are much smaller than the die size and a good heat sink is placed underneath the silicon substrate. With 3.4 W heating power, /spl sim/0.2 MPa applied contact pressure and 90 min wait time before Bonding, vacuum encapsulation at 25 mtorr (/spl sim/3.33 Pa) can be achieved. Folded-beam comb drive /spl mu/-resonators are encapsulated and used as pressure monitors. Long-term testing of vacuum-packaged p-resonators with a Quality Factor (Q) of 2500 has demonstrated stable operation after 69 weeks. A /spl mu/-resonator with a Q factor of /spl sim/9600 has been vacuum encapsulated and shown to be stable after 56 weeks.

  • a hermetic Glass silicon package formed using localized aluminum silicon Glass Bonding
    IEEE\ ASME Journal of Microelectromechanical Systems, 2001
    Co-Authors: Yu-ting Cheng, K. Najafi
    Abstract:

    A hermetic package based on localized aluminum/silicon-to-Glass Bonding has been successfully demonstrated. Less than 0.2 MPa contact pressure with 46 mA current input for two parallel 3.5-/spl mu/m-wide polysilicon on-chip microheaters can raise the temperature of the Bonding region to 700/spl deg/C Bonding temperature and achieve a strong and reliable bond in 7.5 min. The formation of aluminum oxide with silicon precipitate composite layer is believed to be the source of the strong bond. Accelerated testing in an autoclave shows some packages survive more than 450 h under 3 atm, 100% RH and 128/spl deg/C. Premature failure has been attributed to some unbonded regions on the failed samples. The Bonding yield and reliability have been improved by increasing Bonding time and applied pressure.

  • Vacuum packaging technology using localized aluminum/silicon-to-Glass Bonding
    Technical Digest. MEMS 2001. 14th IEEE International Conference on Micro Electro Mechanical Systems (Cat. No.01CH37090), 2001
    Co-Authors: Y.t. Cheng, C.t. Nguyen, K. Najafi
    Abstract:

    A vacuum package based on localized aluminum/silicon-to-Glass Bonding has been successfully demonstrated. With 3.4 watts heating power, /spl sim/0.2 MPa applied contact pressure, and 90 minutes wait time before Bonding, vacuum encapsulation at 25 mtorr can be achieved. Folded-beam comb drive /spl mu/-resonators are encapsulated and used as pressure monitors. Long-term testing of un-annealed vacuum-packaged /spl mu/-resonators with a Q of 2500 has demonstrated stable operation after 20 weeks. A /spl mu/-resonator with Q of /spl sim/9600 has been vacuum encapsulated and shown to be stable after 7 weeks.

  • vacuum packaging technology using localized aluminum silicon to Glass Bonding
    International Conference on Micro Electro Mechanical Systems, 2001
    Co-Authors: Yu-ting Cheng, C.t. Nguyen, K. Najafi
    Abstract:

    A vacuum package based on localized aluminum/silicon-to-Glass Bonding has been successfully demonstrated. With 3.4 watts heating power, /spl sim/0.2 MPa applied contact pressure, and 90 minutes wait time before Bonding, vacuum encapsulation at 25 mtorr can be achieved. Folded-beam comb drive /spl mu/-resonators are encapsulated and used as pressure monitors. Long-term testing of un-annealed vacuum-packaged /spl mu/-resonators with a Q of 2500 has demonstrated stable operation after 20 weeks. A /spl mu/-resonator with Q of /spl sim/9600 has been vacuum encapsulated and shown to be stable after 7 weeks.

Yang Xu - One of the best experts on this subject based on the ideXlab platform.

M M R Howlader - One of the best experts on this subject based on the ideXlab platform.

  • room temperature wafer level Glass Glass Bonding
    Sensors and Actuators A-physical, 2006
    Co-Authors: M M R Howlader, Satoru Suehara, Tadatomo Suga
    Abstract:

    Abstract The findings of this study report the Bonding of Glass/Glass wafers by using the surface activated Bonding (SAB) method at room temperature (RT) without heating. In order to bond, the Glass wafers were activated by a sequential plasma activation process, in which the wafers were cleaned with reactive ion etching (RIE) oxygen radio frequency (rf) plasma and nitrogen radical microwave (MW) plasma one after another and then contacted under hand-applied pressure followed by cold rolling under 20 kg load in atmospheric air. High Bonding strength for Glass/Glass was achieved. Paramount influence of N 2 radical MW plasma on the adhesion enhancement of silicon/silicon Bonding motivated the investigation of the N 2 radical MW plasma relationship with the Bonding strength of Glass/Glass. A considerable influence of N 2 pressure on the Bonding strength was not observed except in N 2 gas pressure of 30 Pa, which might be due to the deBonding between glue and fixture used for tensile pulling test. No significant effect of OH density of Glass wafers on the Bonding strength was found below 400 °C. The result was evident from 400 °C and it was about twofold higher at 600 °C than that of RT to 400 °C. This result indicated that the sequential process Bonding mechanism was consisting of long bridges of hydrogen Bonding by water molecules. Significant environmental influence on the Bonding strength was found and which could be correlated with OH molecules of Glass wafers.

  • Room temperature wafer level Glass/Glass Bonding
    Sensors and Actuators A-physical, 2006
    Co-Authors: M M R Howlader, Satoru Suehara, Tadatomo Suga
    Abstract:

    Abstract The findings of this study report the Bonding of Glass/Glass wafers by using the surface activated Bonding (SAB) method at room temperature (RT) without heating. In order to bond, the Glass wafers were activated by a sequential plasma activation process, in which the wafers were cleaned with reactive ion etching (RIE) oxygen radio frequency (rf) plasma and nitrogen radical microwave (MW) plasma one after another and then contacted under hand-applied pressure followed by cold rolling under 20 kg load in atmospheric air. High Bonding strength for Glass/Glass was achieved. Paramount influence of N 2 radical MW plasma on the adhesion enhancement of silicon/silicon Bonding motivated the investigation of the N 2 radical MW plasma relationship with the Bonding strength of Glass/Glass. A considerable influence of N 2 pressure on the Bonding strength was not observed except in N 2 gas pressure of 30 Pa, which might be due to the deBonding between glue and fixture used for tensile pulling test. No significant effect of OH density of Glass wafers on the Bonding strength was found below 400 °C. The result was evident from 400 °C and it was about twofold higher at 600 °C than that of RT to 400 °C. This result indicated that the sequential process Bonding mechanism was consisting of long bridges of hydrogen Bonding by water molecules. Significant environmental influence on the Bonding strength was found and which could be correlated with OH molecules of Glass wafers.