The Experts below are selected from a list of 144564 Experts worldwide ranked by ideXlab platform
Kyuseog Hwang - One of the best experts on this subject based on the ideXlab platform.
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photoluminescence of zno layer on commercial Glass Substrate prepared by sol gel process
Ceramics International, 2008Co-Authors: Seung Hwangbo, Kyuseog HwangAbstract:Abstract Amorphous ZnO thin film on soda–lime–silica Glass Substrate was prepared by the sol–gel process at low-temperature processing, i.e., 100 °C. No distinct grain structure was observable in the surface of the film. The photoluminescence spectrum of the ZnO thin film with an intense near band edge emission was observed while the defect-related broad green emission was nearly quenched.
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Photoluminescence of ZnO layer on commercial Glass Substrate prepared by sol–gel process
Ceramics International, 2008Co-Authors: Seung Hwangbo, Kyuseog HwangAbstract:Abstract Amorphous ZnO thin film on soda–lime–silica Glass Substrate was prepared by the sol–gel process at low-temperature processing, i.e., 100 °C. No distinct grain structure was observable in the surface of the film. The photoluminescence spectrum of the ZnO thin film with an intense near band edge emission was observed while the defect-related broad green emission was nearly quenched.
Seung Hwangbo - One of the best experts on this subject based on the ideXlab platform.
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photoluminescence of zno layer on commercial Glass Substrate prepared by sol gel process
Ceramics International, 2008Co-Authors: Seung Hwangbo, Kyuseog HwangAbstract:Abstract Amorphous ZnO thin film on soda–lime–silica Glass Substrate was prepared by the sol–gel process at low-temperature processing, i.e., 100 °C. No distinct grain structure was observable in the surface of the film. The photoluminescence spectrum of the ZnO thin film with an intense near band edge emission was observed while the defect-related broad green emission was nearly quenched.
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Photoluminescence of ZnO layer on commercial Glass Substrate prepared by sol–gel process
Ceramics International, 2008Co-Authors: Seung Hwangbo, Kyuseog HwangAbstract:Abstract Amorphous ZnO thin film on soda–lime–silica Glass Substrate was prepared by the sol–gel process at low-temperature processing, i.e., 100 °C. No distinct grain structure was observable in the surface of the film. The photoluminescence spectrum of the ZnO thin film with an intense near band edge emission was observed while the defect-related broad green emission was nearly quenched.
Bor-tzong Tsay - One of the best experts on this subject based on the ideXlab platform.
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Epitaxial growth of high-quality ZnSSe on ZnSSe/In/Glass Substrate
Semiconductor Science and Technology, 2003Co-Authors: Ming-kwei Lee, Tsung-hsiang Shih, Bor-tzong TsayAbstract:We have studied the metal–organic vapour phase epitaxy growth of ZnSSe on a ZnSSe/In/Glass Substrate. The ZnSSe/GaAs wafer was glued on an indium/Glass Substrate. Mechanical polishing and the etching solution of NaOH(1M):H2O2 (30%) = 4:1 was used for the removal of the GaAs Substrate. The deterioration of the photoluminescence after etching is related to the surface defects originally existing at the interface of ZnSSe/GaAs and the roughening of the surface. The enhancement of the photoluminescence after surface trimming is due to the smoothness of the surface and due to the reflection of the indium mirror. The ratio of near-band emission to broad-band emission becomes higher after the regrowth of the ZnSSe epilayer on ZnSSe/In/Glass Substrate at 220 °C. The near-band emission was observed at 438 nm with a full width at half-maximum of 26.6 meV at 77 K. This means that a high-quality ZnSSe epilayer can be obtained on the ZnSSe/In/Glass Substrate.
Akira Fujishima - One of the best experts on this subject based on the ideXlab platform.
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electroless copper plating using zno thin film coated on a Glass Substrate
Journal of The Electrochemical Society, 1994Co-Authors: Hajime Yoshiki, Valery Alexandruk, Kazuhito Hashimoto, Akira FujishimaAbstract:A new electroless plating process for preparing a copper layer with strong adhesion to Glass Substrates was developed. This process incorporates a ZnO thin film on the Glass Substrate, instead of etching and sensitizing the Substrate surface as in a conventional electroless plating process. The copper layer so obtained had a mirror-like finish while maintaining strong adhesion, even on a very smooth Glass surface (Ra<0.01 μm). The bond strength measured by pull tests was more than 10 kg per 2 mm×2 mm square (kg/2 mm□), much greater than that obtained using conventional electroless plating (∼1 kg/2 mm□) and suitable for use in printed circuit boards. We find the ZnO thin film to serve as a kind of «adhesive» between the metal layer and Glass Substrate
Ming-kwei Lee - One of the best experts on this subject based on the ideXlab platform.
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Epitaxial growth of high-quality ZnSSe on ZnSSe/In/Glass Substrate
Semiconductor Science and Technology, 2003Co-Authors: Ming-kwei Lee, Tsung-hsiang Shih, Bor-tzong TsayAbstract:We have studied the metal–organic vapour phase epitaxy growth of ZnSSe on a ZnSSe/In/Glass Substrate. The ZnSSe/GaAs wafer was glued on an indium/Glass Substrate. Mechanical polishing and the etching solution of NaOH(1M):H2O2 (30%) = 4:1 was used for the removal of the GaAs Substrate. The deterioration of the photoluminescence after etching is related to the surface defects originally existing at the interface of ZnSSe/GaAs and the roughening of the surface. The enhancement of the photoluminescence after surface trimming is due to the smoothness of the surface and due to the reflection of the indium mirror. The ratio of near-band emission to broad-band emission becomes higher after the regrowth of the ZnSSe epilayer on ZnSSe/In/Glass Substrate at 220 °C. The near-band emission was observed at 438 nm with a full width at half-maximum of 26.6 meV at 77 K. This means that a high-quality ZnSSe epilayer can be obtained on the ZnSSe/In/Glass Substrate.