The Experts below are selected from a list of 132 Experts worldwide ranked by ideXlab platform
Chang-chun Lee - One of the best experts on this subject based on the ideXlab platform.
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systematic investigation of self heating effect on cmos logic transistors from 20 to 5 nm technology nodes by experimental thermoelectric measurements and finite element modeling
IEEE Transactions on Electron Devices, 2017Co-Authors: Min-sheng Liao, Chia Ping Hsieh, Chang-chun LeeAbstract:The characteristics of thermal conductivity ( ${k}$ ) with different operated temperatures ( ${T}$ ), Material thicknesses ( ${t}$ ), and impurity concentrations ( ${N}$ ) are studied by thermoelectric measurements and developed simulation model for the study of self-heating effect. With the input of these module-level Material properties in our developed finite-element model, the self-heating effect on the CMOS logic transistors from 20- to 5-nm technology nodes are investigated systematically and accurately. The maximum chip temperature in the 14/16-nm technology node Si FinFET device is ~170 °C. On the other hand, the Higher operated temperature is also observed in High Mobility Material devices such as Ge and III-V (InAs) FinFETs due to their poor Material properties of ${k}$ -value. It indicates that these High Mobility Materials are hard to be used in the next generation scaled technology node devices, unless these devices can be operated at the ultralow voltage bias (<0.5 V for InAs and <0.8 V for Ge) from the self-heating effect point of view.
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Systematic Investigation of Self-Heating Effect on CMOS Logic Transistors From 20 to 5 nm Technology Nodes by Experimental Thermoelectric Measurements and Finite Element Modeling
IEEE Transactions on Electron Devices, 2017Co-Authors: Min-sheng Liao, Chia Ping Hsieh, Chang-chun LeeAbstract:The characteristics of thermal conductivity ( ${k}$ ) with different operated temperatures ( ${T}$ ), Material thicknesses ( ${t}$ ), and impurity concentrations ( ${N}$ ) are studied by thermoelectric measurements and developed simulation model for the study of self-heating effect. With the input of these module-level Material properties in our developed finite-element model, the self-heating effect on the CMOS logic transistors from 20- to 5-nm technology nodes are investigated systematically and accurately. The maximum chip temperature in the 14/16-nm technology node Si FinFET device is ~170 °C. On the other hand, the Higher operated temperature is also observed in High Mobility Material devices such as Ge and III-V (InAs) FinFETs due to their poor Material properties of ${k}$ -value. It indicates that these High Mobility Materials are hard to be used in the next generation scaled technology node devices, unless these devices can be operated at the ultralow voltage bias (
Nicolas Leclerc - One of the best experts on this subject based on the ideXlab platform.
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versatile synthesis of α fused bodipy displaying intense absorption in the nir region and High electron affinity
Journal of Materials Chemistry C, 2018Co-Authors: Quentin Huaulme, Alexandra Sutter, Sadiara Fall, Denis Jacquemin, Patrick Leveque, Pascal Retailleau, Gilles Ulrich, Nicolas LeclercAbstract:We report the design and Highly efficient and versatile synthesis of four isomers of α-fused boron dipyrromethene (BODIPY). Structure–property relationships have been established through photophysical and electrochemical properties analysis as well as first-principles calculations. A comparative study of their charge transport properties has been carried out in Organic Field Effect Transistor (OFET) devices, and this allowed the identification of a High Mobility Material (10−2 cm2 V−1 s−1) displaying balanced ambipolar behavior.
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Versatile synthesis of alpha-fused BODIPY displaying intense absorption in the NIR region and High electron affinity
Journal of Materials Chemistry C, 2018Co-Authors: Quentin Huaulme, Alexandra Sutter, Sadiara Fall, Denis Jacquemin, Patrick Leveque, Pascal Retailleau, Gilles Ulrich, Nicolas LeclercAbstract:We report the design and Highly efficient and versatile synthesis of four isomers of alpha-fused boron dipyrromethene (BODIPY). Structure-property relationships have been established through photophysical and electrochemical properties analysis as well as first-principles calculations. A comparative study of their charge transport properties has been carried out in Organic Field Effect Transistor (OFET) devices, and this allowed the identification of a High Mobility Material (10(-2) cm(2) V-1 s(-1)) displaying balanced ambipolar behavior.
Min-sheng Liao - One of the best experts on this subject based on the ideXlab platform.
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systematic investigation of self heating effect on cmos logic transistors from 20 to 5 nm technology nodes by experimental thermoelectric measurements and finite element modeling
IEEE Transactions on Electron Devices, 2017Co-Authors: Min-sheng Liao, Chia Ping Hsieh, Chang-chun LeeAbstract:The characteristics of thermal conductivity ( ${k}$ ) with different operated temperatures ( ${T}$ ), Material thicknesses ( ${t}$ ), and impurity concentrations ( ${N}$ ) are studied by thermoelectric measurements and developed simulation model for the study of self-heating effect. With the input of these module-level Material properties in our developed finite-element model, the self-heating effect on the CMOS logic transistors from 20- to 5-nm technology nodes are investigated systematically and accurately. The maximum chip temperature in the 14/16-nm technology node Si FinFET device is ~170 °C. On the other hand, the Higher operated temperature is also observed in High Mobility Material devices such as Ge and III-V (InAs) FinFETs due to their poor Material properties of ${k}$ -value. It indicates that these High Mobility Materials are hard to be used in the next generation scaled technology node devices, unless these devices can be operated at the ultralow voltage bias (<0.5 V for InAs and <0.8 V for Ge) from the self-heating effect point of view.
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Systematic Investigation of Self-Heating Effect on CMOS Logic Transistors From 20 to 5 nm Technology Nodes by Experimental Thermoelectric Measurements and Finite Element Modeling
IEEE Transactions on Electron Devices, 2017Co-Authors: Min-sheng Liao, Chia Ping Hsieh, Chang-chun LeeAbstract:The characteristics of thermal conductivity ( ${k}$ ) with different operated temperatures ( ${T}$ ), Material thicknesses ( ${t}$ ), and impurity concentrations ( ${N}$ ) are studied by thermoelectric measurements and developed simulation model for the study of self-heating effect. With the input of these module-level Material properties in our developed finite-element model, the self-heating effect on the CMOS logic transistors from 20- to 5-nm technology nodes are investigated systematically and accurately. The maximum chip temperature in the 14/16-nm technology node Si FinFET device is ~170 °C. On the other hand, the Higher operated temperature is also observed in High Mobility Material devices such as Ge and III-V (InAs) FinFETs due to their poor Material properties of ${k}$ -value. It indicates that these High Mobility Materials are hard to be used in the next generation scaled technology node devices, unless these devices can be operated at the ultralow voltage bias (
Ayodhya N. Tiwari - One of the best experts on this subject based on the ideXlab platform.
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Effects of surface treatments on High Mobility ITiO coated glass substrates for dye sensitized solar cells and their tandem solar cell applications
Solar Energy Materials and Solar Cells, 2010Co-Authors: Jake W. Bowers, Hari M. Upadhyaya, Tokio Nakada, Ayodhya N. TiwariAbstract:Abstract Dye sensitized solar cells (DSCs) have the potential to be used as a top device in a tandem solar cell structure with a bottom Cu(In,Ga)Se 2 (CIGS) cell. Optical losses, however, within the fluorine doped tin oxide (FTO) conducting electrode used with DSCs limit the light available for the bottom cell for photocurrent generation, and therefore the whole device. High Mobility transparent conducting oxides have the potential to reduce these optical losses, since the transmission in the near infrared of these substrates is High compared to standard conducting oxides. Attempts have in the past been made to use these conducting oxide substrates as the electrodes in DSCs; however delamination of the deposited TiO 2 layer and an increase in sheet resistance of the High Mobility Material have caused problems. Here we present alternative surface treatments to ensure that delamination is significantly reduced, as well as a method to recover lost conductivity of heated indium oxide films, which result in transparent cells of over 7% efficiency, which is close to that reached on standard FTO substrates.
Quentin Huaulme - One of the best experts on this subject based on the ideXlab platform.
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versatile synthesis of α fused bodipy displaying intense absorption in the nir region and High electron affinity
Journal of Materials Chemistry C, 2018Co-Authors: Quentin Huaulme, Alexandra Sutter, Sadiara Fall, Denis Jacquemin, Patrick Leveque, Pascal Retailleau, Gilles Ulrich, Nicolas LeclercAbstract:We report the design and Highly efficient and versatile synthesis of four isomers of α-fused boron dipyrromethene (BODIPY). Structure–property relationships have been established through photophysical and electrochemical properties analysis as well as first-principles calculations. A comparative study of their charge transport properties has been carried out in Organic Field Effect Transistor (OFET) devices, and this allowed the identification of a High Mobility Material (10−2 cm2 V−1 s−1) displaying balanced ambipolar behavior.
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Versatile synthesis of alpha-fused BODIPY displaying intense absorption in the NIR region and High electron affinity
Journal of Materials Chemistry C, 2018Co-Authors: Quentin Huaulme, Alexandra Sutter, Sadiara Fall, Denis Jacquemin, Patrick Leveque, Pascal Retailleau, Gilles Ulrich, Nicolas LeclercAbstract:We report the design and Highly efficient and versatile synthesis of four isomers of alpha-fused boron dipyrromethene (BODIPY). Structure-property relationships have been established through photophysical and electrochemical properties analysis as well as first-principles calculations. A comparative study of their charge transport properties has been carried out in Organic Field Effect Transistor (OFET) devices, and this allowed the identification of a High Mobility Material (10(-2) cm(2) V-1 s(-1)) displaying balanced ambipolar behavior.