The Experts below are selected from a list of 231 Experts worldwide ranked by ideXlab platform
Chuanxian Ding - One of the best experts on this subject based on the ideXlab platform.
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Formation of apatite on Hydrogenated Amorphous Silicon (a-Si:H) film deposited by plasma-enhanced chemical vapor deposition
Materials Chemistry and Physics, 2007Co-Authors: Chuanxian DingAbstract:Abstract Hydrogenated Amorphous Silicon films were fabricated on p-type, 100 mm diameter 〈1 0 0〉 Silicon wafers by plasma-enhanced chemical vapor deposition (PECVD) using silane and hydrogen. The structure and composition of the Hydrogenated Amorphous Silicon films were investigated using micro-Raman spectroscopy and cross-sectional transmission electron microscopy (XTEM). The Hydrogenated Amorphous Silicon films were subsequently soaked in simulated body fluids to evaluate apatite formation. Carbonate-containing hydroxyapatite (bone-like apatite) was formed on the surface suggesting good bone conductivity. The Amorphous structure and presence of surface Si H bonds are believed to induce apatite formation on the surface of the Hydrogenated Amorphous Silicon film. A good understanding of the surface bioactivity of Silicon-based materials and means to produce a bioactive surface is important to the development of Silicon-based biosensors and micro-devices that are implanted inside humans.
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Formation of apatite on Hydrogenated Amorphous Silicon (a-Si : H) film deposited by plasma-enhanced chemical vapor deposition
Materials Chemistry And Physics, 2007Co-Authors: X Y Liu, P. K. Chu, Chuanxian DingAbstract:Hydrogenated Amorphous Silicon films were fabricated on p-type, 100 mm diameter (100) Silicon wafers by plasma-enhanced chemical vapor deposition (PECVD) using silane and hydrogen. The structure and composition of the Hydrogenated Amorphous Silicon films were investigated using micro-Raman spectroscopy and cross-sectional transmission electron microscopy (XTEM). The Hydrogenated Amorphous Silicon films were subsequently soaked in simulated body fluids to evaluate apatite formation. Carbonate-containing hydroxyapatite (bone-like apatite) was formed on the surface suggesting good bone conductivity. The Amorphous structure and presence of surface Si-H bonds are believed to induce apatite formation on the surface of the Hydrogenated Amorphous Silicon film. A good understanding of the surface bioactivity of Silicon-based materials and means to produce a bioactive surface is important to the development of Silicon-based biosensors and micro-devices that are implanted inside humans. (c) 2006 Elsevier B.V. All rights reserved.
X Y Liu - One of the best experts on this subject based on the ideXlab platform.
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Formation of apatite on Hydrogenated Amorphous Silicon (a-Si : H) film deposited by plasma-enhanced chemical vapor deposition
Materials Chemistry And Physics, 2007Co-Authors: X Y Liu, P. K. Chu, Chuanxian DingAbstract:Hydrogenated Amorphous Silicon films were fabricated on p-type, 100 mm diameter (100) Silicon wafers by plasma-enhanced chemical vapor deposition (PECVD) using silane and hydrogen. The structure and composition of the Hydrogenated Amorphous Silicon films were investigated using micro-Raman spectroscopy and cross-sectional transmission electron microscopy (XTEM). The Hydrogenated Amorphous Silicon films were subsequently soaked in simulated body fluids to evaluate apatite formation. Carbonate-containing hydroxyapatite (bone-like apatite) was formed on the surface suggesting good bone conductivity. The Amorphous structure and presence of surface Si-H bonds are believed to induce apatite formation on the surface of the Hydrogenated Amorphous Silicon film. A good understanding of the surface bioactivity of Silicon-based materials and means to produce a bioactive surface is important to the development of Silicon-based biosensors and micro-devices that are implanted inside humans. (c) 2006 Elsevier B.V. All rights reserved.
P. K. Chu - One of the best experts on this subject based on the ideXlab platform.
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Formation of apatite on Hydrogenated Amorphous Silicon (a-Si : H) film deposited by plasma-enhanced chemical vapor deposition
Materials Chemistry And Physics, 2007Co-Authors: X Y Liu, P. K. Chu, Chuanxian DingAbstract:Hydrogenated Amorphous Silicon films were fabricated on p-type, 100 mm diameter (100) Silicon wafers by plasma-enhanced chemical vapor deposition (PECVD) using silane and hydrogen. The structure and composition of the Hydrogenated Amorphous Silicon films were investigated using micro-Raman spectroscopy and cross-sectional transmission electron microscopy (XTEM). The Hydrogenated Amorphous Silicon films were subsequently soaked in simulated body fluids to evaluate apatite formation. Carbonate-containing hydroxyapatite (bone-like apatite) was formed on the surface suggesting good bone conductivity. The Amorphous structure and presence of surface Si-H bonds are believed to induce apatite formation on the surface of the Hydrogenated Amorphous Silicon film. A good understanding of the surface bioactivity of Silicon-based materials and means to produce a bioactive surface is important to the development of Silicon-based biosensors and micro-devices that are implanted inside humans. (c) 2006 Elsevier B.V. All rights reserved.
Atilla Aydinli - One of the best experts on this subject based on the ideXlab platform.
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Microcavity effects in the photoluminescence of Hydrogenated Amorphous Silicon nitride
High-power lasers and applications, 1998Co-Authors: Ali Serpengüzel, Atilla AydinliAbstract:Fabry-Perot microcavities are used for the alteration of photoluminescence in Hydrogenated Amorphous Silicon nitride grown with and without ammonia. The photoluminescence is red-near-infrared for the samples grown without ammonia, and blue-green for the samples grown with ammonia. In the Fabry- Perot microcavities, the amplitude of the photoluminescence is enhanced, while its linewidth is reduced with respect to the bulk Hydrogenated Amorphous Silicon nitride. The microcavity was realized by a metallic back mirror and a Hydrogenated Amorphous Silicon nitride--air or a metallic front mirror. The transmittance, reflectance, and absorbance spectra were also measured and calculated. The calculated spectra agree well with the experimental spectra. The Hydrogenated Amorphous Silicon nitride microcavity has potential for becoming a versatile Silicon based optoelectronic device such as a color flat panel display, a resonant cavity enhanced light emitting diode, or a laser.
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Alteration of spontaneous emission in Hydrogenated Amorphous Silicon nitride microcavities
Journal of Non-crystalline Solids, 1998Co-Authors: Ali Serpengüzel, Atilla AydinliAbstract:Abstract A Fabry–Perot microcavity is used for the alteration of the spontaneous emission spectrum in Hydrogenated Amorphous Silicon nitride. The modified photon density of states of the Fabry–Perot microcavity are responsible for the alteration of the spontaneous emission spectrum. The Fabry–Perot microcavity enhances the intensity of the spontaneous emission signal by a factor of 4 at the photon energies corresponding to the microcavity resonances. The 0.075 eV wide spontaneous emission linewidth of the Fabry–Perot microcavity resonances is 7 times smaller than the 0.5 eV wide spontaneous emission linewidth of the bulk Hydrogenated Amorphous Silicon nitride.
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Enhancement and inhibition of photolumincescence in Hydrogenated Amorphous Silicon nitride microcavities.
Optics Express, 1997Co-Authors: Ali Serpengüzel, Atilla AydinliAbstract:A Fabry-Perot microcavity is used for the enhancement and inhibition of photoluminescence in Hydrogenated Amorphous Silicon nitride. The amplitude of the photoluminescence is enhanced 4 times, while its linewidth is reduced 8 times with respect to the bulk Hydrogenated Amorphous Silicon nitride. The transmittance, reflectance, and absorptance spectra of the microcavity were also measured and calculated. The calculated spectra agree well with the experimental ones.
Zhang Xiaodan - One of the best experts on this subject based on the ideXlab platform.
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Modify the Performance of Hydrogenated Amorphous Silicon Germanium Thin Film Solar Cell
2013Co-Authors: Wei Changchun, Sun Jian, Hou Guofu, Zhao Ying, Zhang XiaodanAbstract:This paper studies the Hydrogenated Amorphous Silicon germanium thin film solar cell deposited by the radio frequency plasma-enhanced chemical vapor deposition (RF-PECVD) process. According to the inherent characteristics of Hydrogenated Amorphous Silicon germanium material，regulating the ratio of Silicon and germanium element in the Silicon germanium alloy makes the independently control of open circuit voltage(Voc) and short circuit current density (Jsc) of a-SiGe:H thin film solar cell realized. By means of the structural design of band gap profiling in the Amorphous Silicon germanium intrinsic layer，the Hydrogenated Amorphous Silicon germanium thin film solar cell which can be adopted efficiently as the component cell of the multi-junction solar cell is obtained.
