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J Golak - One of the best experts on this subject based on the ideXlab platform.
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first measurements of spin dependent double differential cross sections and the gerasimov drell hearn integrand from h 3e γ n pp at Incident Photon energies of 12 8 and 14 7 mev
Physical Review Letters, 2013Co-Authors: G Laskaris, Q Ye, B Lalremruata, Q J Ye, T Averett, A Deltuva, D Dutta, A C Fonseca, M W Ahmed, J GolakAbstract:: The first measurement of the three-body photodisintegration of longitudinally polarized (3)He with a circularly polarized γ-ray beam was carried out at the High Intensity γ-ray Source facility located at Triangle Universities Nuclear Laboratory. The spin-dependent double-differential cross sections and the contributions from the three-body photodisintegration to the (3)He Gerasimov-Drell-Hearn integrand are presented and compared with state-of-the-art three-body calculations at the Incident Photon energies of 12.8 and 14.7 MeV. The data reveal the importance of including the Coulomb interaction between protons in three-body calculations.
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first measurements of spin dependent double differential cross sections and the gdh integrand from vec 3he vec gamma n pp at Incident Photon energies of 12 8 and 14 7 mev
Physical Review Letters, 2013Co-Authors: G Laskaris, Q Ye, B Lalremruata, Q J Ye, M Ahmed, T Averett, A Deltuva, D Dutta, A C Fonseca, J GolakAbstract:The first measurement of the three-body photodisintegration of longitudinally-polarized ^3He with a circularly-polarized \gamma-ray beam was carried out at the High Intensity \gamma-ray Source (HI\gamma S) facility located at Triangle Universities Nuclear Laboratory (TUNL). The spin-dependent double-differential cross sections and the contributions from the three-body photodisintegration to the ^3He GDH integrand are presented and compared with state-of-the-art three-body calculations at the Incident Photon energies of 12.8 and 14.7 MeV. The data reveal the importance of including the Coulomb interaction between protons in three-body calculations.
Ekaterina V. Skorb - One of the best experts on this subject based on the ideXlab platform.
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bismuth oxysulfide film electrodes with giant Incident Photon to current conversion efficiency the dynamics of properties with deposition time
Physical Chemistry Chemical Physics, 2018Co-Authors: Evgeny A. Bondarenko, E A Streltsov, A V Mazanik, A I Kulak, Vytautas Grivickas, Patrik Scajev, Ekaterina V. SkorbAbstract:It was demonstrated in our previous work that the photoelectrochemical (PEC) reduction processes occur with a giant Incident Photon-to-current conversion efficiency (IPCE ≫ 100%) at bismuth oxysulfide (BOS) semiconductor films in aqueous solutions containing acceptors of photoelectrons ([Fe(CN)6]3−). The anomalously high IPCE was related to the photoconductivity of the semiconductor. In this work, we analyze the dynamics of the chemical and phase composition of BOS films with variation of their deposition time, as well as the dependence of photocurrent on the film thickness and wavelength of the Incident light. We demonstrate that in the case of illumination with a short-wavelength light (λ = 465 nm), the photocurrent is reduced down to a complete disappearance with an increase in the film thickness in the range of 0.3–1.3 μm, and for a fixed thickness of the bismuth oxysulfide film, the photocurrent decreases with the reduction of the wavelength indicating that photogeneration of the charge carriers over the entire thickness of the film is necessary for the giant IPCE effect. Using the light induced transient grating (LITG) method, the lifetime of the charge carriers (τ) was determined in the range of 25–80 ps depending on the film thickness, whereas the diffusion coefficient (D) does not exceed 1 cm2 s−1 meaning that the charge transport across the films is determined only by drift.
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Photoconductivity: Giant Incident Photon-to-Current Conversion with Photoconductivity Gain on Nanostructured Bismuth Oxysulfide Photoelectrodes under Visible-Light Illumination (Adv. Mater. 40/2017)
Advanced Materials, 2017Co-Authors: Evgeny A. Bondarenko, Eugene A. Streltsov, Mikalai V. Malashchonak, Alexander V. Mazanik, Anatoly I. Kulak, Ekaterina V. SkorbAbstract:Cover Picture "Photoconductivity: Giant Incident Photon-to-Current Conversion with Photoconductivity Gain on Nanostructured Bismuth Oxysulfide Photoelectrodes under Visible-Light Illumination (Adv. Mater. 40/2017)" DOI: 10.1002/adma.20177028
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giant Incident Photon to current conversion with photoconductivity gain on nanostructured bismuth oxysulfide photoelectrodes under visible light illumination
Advanced Materials, 2017Co-Authors: Evgeny A. Bondarenko, Eugene A. Streltsov, Mikalai V. Malashchonak, Alexander V. Mazanik, Anatoly I. Kulak, Ekaterina V. SkorbAbstract:Nanostructured layered bismuth oxysulfide films synthesized by chemical bath deposition reveal a giant Incident Photon-to-current conversion efficiency (IPCE). This study shows that surprisingly for the cathodic photocurrent in the photoreduction process, the IPCE reaches ≈2500% in aqueous solutions containing [Fe(CN)6]3−. The giant IPCE is observed starting from a certain minimal oxidizer concentration (c > 10−3m for [Fe(CN)6]3−) and decreases nonlinearly with an increase of illumination intensity. Giant IPCE is determined by the decrease in resistivity of the bismuth oxysulfide film under illumination with photoconductivity gain, which provides the possibility of charge carriers from an external circuit to participate in the photoreduction process. Giant IPCE is observed not only in [Fe(CN)6]3− solutions, but also in electrolytes containing other photoelectron acceptors: Fe3+, I3−, quinone, H2O2. In all, solution-processed layered bismuth oxysulfide films offer large-area coverage, nontoxicity, low cost, and compatibility with a wide range of substrates. Abnormally high photoelectrochemical activity, as well as a band gap energy value favorable for efficient conversion of solar light (1.38 eV, direct optical transitions), proves the potential of bismuth oxysulfide photoelectrodes for a new generation of high-performance photoconverters.
Tadayoshi Sakata - One of the best experts on this subject based on the ideXlab platform.
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high Incident Photon to current conversion efficiency by sulfurization of wide band gap metal oxides
Materials Chemistry and Physics, 2003Co-Authors: P M Sirimanne, Tadayoshi SakataAbstract:Abstract Sulfurization of some wide-band gap metal oxides forms photoactive sulfides on metal oxide electrodes. Very high-Incident Photon-to-current conversion efficiencies are achieved on In 2 S 3 /In 2 O 3 , Bi 2 S 3 /Bi 2 O 3 , and MgIn 2 S 4 /MgIn 2 O 4 electrodes in a polysulfide electrolyte. Semiconductor sensitization is responsible for the generation of the photocurrent on those electrodes. A semiconductor sensitization process was not observed on ZnS/ZnO electrodes. Different kinetics at the semiconductor/semiconductor interface are the reasons for the observed difference of the Incident Photon-to-current conversion efficiency, for the electrodes.
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generation of high Incident Photon to current conversion efficiency by semiconductor sensitization of microcrystals of in2s3 on wide bandgap in2o3 pellets
Chemical Physics Letters, 2001Co-Authors: P M Sirimanne, Noriyuki Sonoyama, Tadayoshi SakataAbstract:Abstract Generation of anodic photocurrent on In 2 S 3 |In 2 O 3 electrodes was explained from the viewpoint of semiconductor sensitization. A very high Incident Photon to current conversion efficiency of 80% was achieved at an In 2 S 3 |In 2 O 3 electrode in a polysulfide electrolyte.
Evgeny A. Bondarenko - One of the best experts on this subject based on the ideXlab platform.
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bismuth oxysulfide film electrodes with giant Incident Photon to current conversion efficiency the dynamics of properties with deposition time
Physical Chemistry Chemical Physics, 2018Co-Authors: Evgeny A. Bondarenko, E A Streltsov, A V Mazanik, A I Kulak, Vytautas Grivickas, Patrik Scajev, Ekaterina V. SkorbAbstract:It was demonstrated in our previous work that the photoelectrochemical (PEC) reduction processes occur with a giant Incident Photon-to-current conversion efficiency (IPCE ≫ 100%) at bismuth oxysulfide (BOS) semiconductor films in aqueous solutions containing acceptors of photoelectrons ([Fe(CN)6]3−). The anomalously high IPCE was related to the photoconductivity of the semiconductor. In this work, we analyze the dynamics of the chemical and phase composition of BOS films with variation of their deposition time, as well as the dependence of photocurrent on the film thickness and wavelength of the Incident light. We demonstrate that in the case of illumination with a short-wavelength light (λ = 465 nm), the photocurrent is reduced down to a complete disappearance with an increase in the film thickness in the range of 0.3–1.3 μm, and for a fixed thickness of the bismuth oxysulfide film, the photocurrent decreases with the reduction of the wavelength indicating that photogeneration of the charge carriers over the entire thickness of the film is necessary for the giant IPCE effect. Using the light induced transient grating (LITG) method, the lifetime of the charge carriers (τ) was determined in the range of 25–80 ps depending on the film thickness, whereas the diffusion coefficient (D) does not exceed 1 cm2 s−1 meaning that the charge transport across the films is determined only by drift.
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Photoconductivity: Giant Incident Photon-to-Current Conversion with Photoconductivity Gain on Nanostructured Bismuth Oxysulfide Photoelectrodes under Visible-Light Illumination (Adv. Mater. 40/2017)
Advanced Materials, 2017Co-Authors: Evgeny A. Bondarenko, Eugene A. Streltsov, Mikalai V. Malashchonak, Alexander V. Mazanik, Anatoly I. Kulak, Ekaterina V. SkorbAbstract:Cover Picture "Photoconductivity: Giant Incident Photon-to-Current Conversion with Photoconductivity Gain on Nanostructured Bismuth Oxysulfide Photoelectrodes under Visible-Light Illumination (Adv. Mater. 40/2017)" DOI: 10.1002/adma.20177028
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giant Incident Photon to current conversion with photoconductivity gain on nanostructured bismuth oxysulfide photoelectrodes under visible light illumination
Advanced Materials, 2017Co-Authors: Evgeny A. Bondarenko, Eugene A. Streltsov, Mikalai V. Malashchonak, Alexander V. Mazanik, Anatoly I. Kulak, Ekaterina V. SkorbAbstract:Nanostructured layered bismuth oxysulfide films synthesized by chemical bath deposition reveal a giant Incident Photon-to-current conversion efficiency (IPCE). This study shows that surprisingly for the cathodic photocurrent in the photoreduction process, the IPCE reaches ≈2500% in aqueous solutions containing [Fe(CN)6]3−. The giant IPCE is observed starting from a certain minimal oxidizer concentration (c > 10−3m for [Fe(CN)6]3−) and decreases nonlinearly with an increase of illumination intensity. Giant IPCE is determined by the decrease in resistivity of the bismuth oxysulfide film under illumination with photoconductivity gain, which provides the possibility of charge carriers from an external circuit to participate in the photoreduction process. Giant IPCE is observed not only in [Fe(CN)6]3− solutions, but also in electrolytes containing other photoelectron acceptors: Fe3+, I3−, quinone, H2O2. In all, solution-processed layered bismuth oxysulfide films offer large-area coverage, nontoxicity, low cost, and compatibility with a wide range of substrates. Abnormally high photoelectrochemical activity, as well as a band gap energy value favorable for efficient conversion of solar light (1.38 eV, direct optical transitions), proves the potential of bismuth oxysulfide photoelectrodes for a new generation of high-performance photoconverters.
G Laskaris - One of the best experts on this subject based on the ideXlab platform.
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first measurements of spin dependent double differential cross sections and the gerasimov drell hearn integrand from h 3e γ n pp at Incident Photon energies of 12 8 and 14 7 mev
Physical Review Letters, 2013Co-Authors: G Laskaris, Q Ye, B Lalremruata, Q J Ye, T Averett, A Deltuva, D Dutta, A C Fonseca, M W Ahmed, J GolakAbstract:: The first measurement of the three-body photodisintegration of longitudinally polarized (3)He with a circularly polarized γ-ray beam was carried out at the High Intensity γ-ray Source facility located at Triangle Universities Nuclear Laboratory. The spin-dependent double-differential cross sections and the contributions from the three-body photodisintegration to the (3)He Gerasimov-Drell-Hearn integrand are presented and compared with state-of-the-art three-body calculations at the Incident Photon energies of 12.8 and 14.7 MeV. The data reveal the importance of including the Coulomb interaction between protons in three-body calculations.
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first measurements of spin dependent double differential cross sections and the gdh integrand from vec 3he vec gamma n pp at Incident Photon energies of 12 8 and 14 7 mev
Physical Review Letters, 2013Co-Authors: G Laskaris, Q Ye, B Lalremruata, Q J Ye, M Ahmed, T Averett, A Deltuva, D Dutta, A C Fonseca, J GolakAbstract:The first measurement of the three-body photodisintegration of longitudinally-polarized ^3He with a circularly-polarized \gamma-ray beam was carried out at the High Intensity \gamma-ray Source (HI\gamma S) facility located at Triangle Universities Nuclear Laboratory (TUNL). The spin-dependent double-differential cross sections and the contributions from the three-body photodisintegration to the ^3He GDH integrand are presented and compared with state-of-the-art three-body calculations at the Incident Photon energies of 12.8 and 14.7 MeV. The data reveal the importance of including the Coulomb interaction between protons in three-body calculations.
