The Experts below are selected from a list of 312 Experts worldwide ranked by ideXlab platform
Martin H Ettenberg - One of the best experts on this subject based on the ideXlab platform.
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dual band technology on Indium Gallium Arsenide focal plane arrays
Proceedings of SPIE, 2011Co-Authors: Peter Dixon, Martin H Ettenberg, Cory Hess, Chuan Li, John TrezzaAbstract:While InGaAs-based SWIR imaging technology has been improved dramatically over the past 10 years, the motivation remains to reduce Size Weight and Power (SWaP) for applications in Intelligence Surveillance and Reconnaissance (ISR). Goodrich ISR Systems, Princeton (Sensors Unlimited, Inc.) has continued to improve detector sensitivity. Additionally, SUI is working jointly with DRS-RSTA to develop innovative techniques for manufacturing dual-band focal planes to provide next generation technology for not only reducing SWaP for SWIR imagers, but also to combine imaging solutions for providing a single imager for Visible Near-SWIR (VNS) + LW imaging solutions. Such developments are targeted at reducing system SWaP, cost and complexity for imaging payloads on board UASs as well as soldier deployed systems like weapon sights. Our motivation is to demonstrate capability in providing superior image quality in fused LWIR and SWIR imaging systems, while reducing the total system SWaP and cost by enabling Short Wave and Thermal imaging in a single uncooled imager. Under DARPA MTO awarded programs, a LW bolometer (DRS-RSTA) is fabricated on a Short Wave (SW) InGaAs Vis-SWIR (SUI-Goodrich) Imager. The combined imager is a dual-band Sensor-Chip Assembly which is capable of imaging in VIS-SWIR + LW. Both DRS and Goodrich have developed materials and process enhancements to support these dual-band platform investigations. The two imagers are confocal and coaxial with respect to the incident image plane. Initial work has completed a single Read Out Integrated Circuit (ROIC) capable of running both imagers. The team has hybridized InGaAs Focal planes to 6" full ROIC wafers to support bolometer fabrication onto the SW array.
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range gated imaging with an Indium Gallium Arsenide based focal plane array
Infrared Technology and Applications XXX, 2004Co-Authors: Robert M Brubaker, Martin H Ettenberg, Matthew T Ogrady, Michael A Blessinger, Christopher J DriesAbstract:Range-gated imaging using Indium Gallium Arsenide based focal plane arrays enables both depth and intensity imaging with eye-safe lasers while remaining covert to night vision goggles. We report on a focal plane array consisting of an Indium Gallium Arsenide photodiode array hybrid-integrated with a CMOS readout circuit, resulting in an all solid state device. A 5 V supply avoids the complication of high voltage supplies and improves reliability, while also allowing the device to be small and lightweight. The spectral sensitivity of InGaAs extends from 0.9 microns to 1.7 microns, allowing the use of commercially available pulsed lasers with 1.5 micron wavelength, several millijoule pulse energies, and nanosecond scale pulse durations. SUI is developing a 320 x 256 pixel imager with the ability to conduct range gated imaging with sub-100 ns gates, while also allowing a 16 ms integration time for imaging in a staring mode. The pixels are fabricated on a 25 micron pitch for a compact device, and all pixels are gated simultaneously for “snapshot” exposure. High in-pixel gain with nearly noiseless amplification and low dark current enable high sensitivity imaging from ultra-short gates to video rate imaging.
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Indium Gallium Arsenide imaging with smaller cameras higher resolution arrays and greater material sensitivity
SPIE milestone series, 2004Co-Authors: Martin H Ettenberg, Robert M Brubaker, Matthew T Ogrady, Marshall J. Cohen, M.j. Lange, G.h. OlsenAbstract:Indium Gallium Arsenide (InGaAs) photodiode arrays have numerous commercial, industrial, and military applications. During the past 10 years, great strides have been made in the development of these devices starting with simple 256-element linear photodiode arrays and progressing to the large 640 x 512 element area arrays now readily available. Linear arrays are offered with 512 elements on a 25 micron pitch with no defective pixels, and are used in spectroscopic monitors for wavelength division multiplexing (WDM) systems as well as in machine vision applications. A 320 x 240 solid-state array operates at room temperature, which allows development of a camera which is smaller than 25 cm 3 in volume, weighs less than 100 g and uses less than 750 mW of power. Two dimensional focal plane arrays and cameras have been manufactured with detectivity, D*, greater than 10 1 4 cm-Hz/W at room temperature and have demonstrated the ability to image at night. Cameras are also critical tools for the assembly and performance monitoring of optical switches and add-drop multiplexers in the telecommunications industry. These same cameras are used for the inspection of silicon wafers and fine art, laser beam profiling, and metals manufacturing. By varying the Indium content, InGaAs photodiode arrays can be tailored to cover the entire short-wave infrared spectrum from 1.0 micron to 2.5 microns. InGaAs focal plane arrays and cameras sensitive to 2.0 micron wavelength light are now available in 320 x 240 formats.
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Indium Gallium Arsenide photodiode arrays for optical communications
Optoelectronic and Wireless Data Management Processing Storage and Retrieval, 2001Co-Authors: Marshall J. Cohen, Robert M Brubaker, J. Christopher Dries, Martin H EttenbergAbstract:Indium Gallium Arsenide (InGaAs) photodiode arrays are used in a wide variety of optical communications-related applications. Two-dimensional arrays are used for laser beam profiling, assembly and performance monitoring of optical switches and add-drop multiplexers, and simultaneous aiming/detection for free space communications. Linear arrays integrated with self- scanned readout integrated circuits are used for the spectroscopic monitoring of WDM source arrays and for dynamic gain flattening of erbium-doped fiber amplifiers (EDFAs). Parallel output arrays are coupled with arrayed waveguide gratings (AWGs) both for power monitoring of WDM source arrays and direct detection of high-speed signals. In this paper we will summarize the status of InGaAs array technology and describe the various applications in detail.
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an Indium Gallium Arsenide visible swir focal plane array for low light level imaging
1999Co-Authors: Marshall J. Cohen, Martin H Ettenberg, M.j. Lange, G.h. OlsenAbstract:Abstract : PIN photodiodes fabricated from Indium Gallium Arsenide lattice-matched to Indium phosphide substrates (In(.53)Ga(.47)As/InP) exhibit low reverse saturation current densities (JD 10(exp 6) omega-sq cm) at T=290K. Backside-illuminated, hybrid-integrated InGaAs FPAs are sensitive from 0.9 micrometers to 1.7 micrometers. 290K detectivities, D(*), greater than 10(exp 14) cm-(square root of Hz/W) are demonstrated. This represents the highest room temperature detectivity of any infrared material. The long wavelength cutoff (1.7 micrometers) makes In(.53)Ga(.47)As an idea match to the available airglow that has major peaks at 1.3 micrometers and 1.6 micrometers. The short wavelength 'cut-on' at 0.9 micrometers is due to absorption in the InP substrate. We will report on new InGaAs FPA epitaxial structures and processing techniques. These have resulted in improved performance in the form of a 10 x increase in detectivity and visible response via removal of the InP substrate. The resulting device features visible and SWIR response with greater than 15% quantum efficiency at 0.5 micrometers while maintaining the long wavelength cutoff. Imaging has been demonstrated under overcast starlight/urban glow conditions with cooling provided by a single stage thermoelectric cooler. Details on the material structure and device fabrication, quantitative characterization of spectral response and detectivity, as well as examples of night vision imagery are presented.
Marshall J. Cohen - One of the best experts on this subject based on the ideXlab platform.
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Indium Gallium Arsenide imaging with smaller cameras higher resolution arrays and greater material sensitivity
SPIE milestone series, 2004Co-Authors: Martin H Ettenberg, Robert M Brubaker, Matthew T Ogrady, Marshall J. Cohen, M.j. Lange, G.h. OlsenAbstract:Indium Gallium Arsenide (InGaAs) photodiode arrays have numerous commercial, industrial, and military applications. During the past 10 years, great strides have been made in the development of these devices starting with simple 256-element linear photodiode arrays and progressing to the large 640 x 512 element area arrays now readily available. Linear arrays are offered with 512 elements on a 25 micron pitch with no defective pixels, and are used in spectroscopic monitors for wavelength division multiplexing (WDM) systems as well as in machine vision applications. A 320 x 240 solid-state array operates at room temperature, which allows development of a camera which is smaller than 25 cm 3 in volume, weighs less than 100 g and uses less than 750 mW of power. Two dimensional focal plane arrays and cameras have been manufactured with detectivity, D*, greater than 10 1 4 cm-Hz/W at room temperature and have demonstrated the ability to image at night. Cameras are also critical tools for the assembly and performance monitoring of optical switches and add-drop multiplexers in the telecommunications industry. These same cameras are used for the inspection of silicon wafers and fine art, laser beam profiling, and metals manufacturing. By varying the Indium content, InGaAs photodiode arrays can be tailored to cover the entire short-wave infrared spectrum from 1.0 micron to 2.5 microns. InGaAs focal plane arrays and cameras sensitive to 2.0 micron wavelength light are now available in 320 x 240 formats.
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Indium Gallium Arsenide photodiode arrays for optical communications
Optoelectronic and Wireless Data Management Processing Storage and Retrieval, 2001Co-Authors: Marshall J. Cohen, Robert M Brubaker, J. Christopher Dries, Martin H EttenbergAbstract:Indium Gallium Arsenide (InGaAs) photodiode arrays are used in a wide variety of optical communications-related applications. Two-dimensional arrays are used for laser beam profiling, assembly and performance monitoring of optical switches and add-drop multiplexers, and simultaneous aiming/detection for free space communications. Linear arrays integrated with self- scanned readout integrated circuits are used for the spectroscopic monitoring of WDM source arrays and for dynamic gain flattening of erbium-doped fiber amplifiers (EDFAs). Parallel output arrays are coupled with arrayed waveguide gratings (AWGs) both for power monitoring of WDM source arrays and direct detection of high-speed signals. In this paper we will summarize the status of InGaAs array technology and describe the various applications in detail.
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Miniature Indium Gallium Arsenide short-wave infrared camera for unattended imaging applications
Unattended Ground Sensor Technologies and Applications II, 2000Co-Authors: Marshall J. Cohen, J.s. Vermaak, Matthew T. O'grady, Joseph V. Groppe, Gregory H. OlsenAbstract:Indium Gallium Arsenide (InGaAs) focal plane arrays and cameras have demonstrated significant potential in battlefield applications. Room temperature detectivities, D*, in excess of 1014 cm-(root)Hz/W have enabled night vision imaging under low light level conditions. The 0.9 micrometers to 1.7 micrometers wavelength band allows the use of eye- safe lasers for target designation and covert active illumination. We report here a miniature InGaAs camera designed for unattended ground sensor and robot-mounted applications. The camera is approximately the size of a D- cell battery, weighs less than 200 g. has a 320 X 240 pixel spatial resolution and maintains D* > 1014 cm- (root)Hz/W. The miniature camera is fully self contained. The only input is DC power (3.6 V). The camera has both analog (RS170) and 12-bit digital (LVDS) video outputs. It is intended as a demonstration vehicle for battlefield distributed robotic vision but will find use in other applications as an unattended sensor or rifle site.© (2000) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.
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an Indium Gallium Arsenide visible swir focal plane array for low light level imaging
1999Co-Authors: Marshall J. Cohen, Martin H Ettenberg, M.j. Lange, G.h. OlsenAbstract:Abstract : PIN photodiodes fabricated from Indium Gallium Arsenide lattice-matched to Indium phosphide substrates (In(.53)Ga(.47)As/InP) exhibit low reverse saturation current densities (JD 10(exp 6) omega-sq cm) at T=290K. Backside-illuminated, hybrid-integrated InGaAs FPAs are sensitive from 0.9 micrometers to 1.7 micrometers. 290K detectivities, D(*), greater than 10(exp 14) cm-(square root of Hz/W) are demonstrated. This represents the highest room temperature detectivity of any infrared material. The long wavelength cutoff (1.7 micrometers) makes In(.53)Ga(.47)As an idea match to the available airglow that has major peaks at 1.3 micrometers and 1.6 micrometers. The short wavelength 'cut-on' at 0.9 micrometers is due to absorption in the InP substrate. We will report on new InGaAs FPA epitaxial structures and processing techniques. These have resulted in improved performance in the form of a 10 x increase in detectivity and visible response via removal of the InP substrate. The resulting device features visible and SWIR response with greater than 15% quantum efficiency at 0.5 micrometers while maintaining the long wavelength cutoff. Imaging has been demonstrated under overcast starlight/urban glow conditions with cooling provided by a single stage thermoelectric cooler. Details on the material structure and device fabrication, quantitative characterization of spectral response and detectivity, as well as examples of night vision imagery are presented.
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An Indium Gallium Arsenide Visible/SWIR Focal Plane Array for Low Light Level Imaging
1999Co-Authors: Marshall J. Cohen, Martin H Ettenberg, M.j. Lange, Gregory H. OlsenAbstract:Abstract : PIN photodiodes fabricated from Indium Gallium Arsenide lattice-matched to Indium phosphide substrates (In(.53)Ga(.47)As/InP) exhibit low reverse saturation current densities (JD 10(exp 6) omega-sq cm) at T=290K. Backside-illuminated, hybrid-integrated InGaAs FPAs are sensitive from 0.9 micrometers to 1.7 micrometers. 290K detectivities, D(*), greater than 10(exp 14) cm-(square root of Hz/W) are demonstrated. This represents the highest room temperature detectivity of any infrared material. The long wavelength cutoff (1.7 micrometers) makes In(.53)Ga(.47)As an idea match to the available airglow that has major peaks at 1.3 micrometers and 1.6 micrometers. The short wavelength 'cut-on' at 0.9 micrometers is due to absorption in the InP substrate. We will report on new InGaAs FPA epitaxial structures and processing techniques. These have resulted in improved performance in the form of a 10 x increase in detectivity and visible response via removal of the InP substrate. The resulting device features visible and SWIR response with greater than 15% quantum efficiency at 0.5 micrometers while maintaining the long wavelength cutoff. Imaging has been demonstrated under overcast starlight/urban glow conditions with cooling provided by a single stage thermoelectric cooler. Details on the material structure and device fabrication, quantitative characterization of spectral response and detectivity, as well as examples of night vision imagery are presented.
G.h. Olsen - One of the best experts on this subject based on the ideXlab platform.
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Indium Gallium Arsenide imaging with smaller cameras higher resolution arrays and greater material sensitivity
SPIE milestone series, 2004Co-Authors: Martin H Ettenberg, Robert M Brubaker, Matthew T Ogrady, Marshall J. Cohen, M.j. Lange, G.h. OlsenAbstract:Indium Gallium Arsenide (InGaAs) photodiode arrays have numerous commercial, industrial, and military applications. During the past 10 years, great strides have been made in the development of these devices starting with simple 256-element linear photodiode arrays and progressing to the large 640 x 512 element area arrays now readily available. Linear arrays are offered with 512 elements on a 25 micron pitch with no defective pixels, and are used in spectroscopic monitors for wavelength division multiplexing (WDM) systems as well as in machine vision applications. A 320 x 240 solid-state array operates at room temperature, which allows development of a camera which is smaller than 25 cm 3 in volume, weighs less than 100 g and uses less than 750 mW of power. Two dimensional focal plane arrays and cameras have been manufactured with detectivity, D*, greater than 10 1 4 cm-Hz/W at room temperature and have demonstrated the ability to image at night. Cameras are also critical tools for the assembly and performance monitoring of optical switches and add-drop multiplexers in the telecommunications industry. These same cameras are used for the inspection of silicon wafers and fine art, laser beam profiling, and metals manufacturing. By varying the Indium content, InGaAs photodiode arrays can be tailored to cover the entire short-wave infrared spectrum from 1.0 micron to 2.5 microns. InGaAs focal plane arrays and cameras sensitive to 2.0 micron wavelength light are now available in 320 x 240 formats.
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an Indium Gallium Arsenide visible swir focal plane array for low light level imaging
1999Co-Authors: Marshall J. Cohen, Martin H Ettenberg, M.j. Lange, G.h. OlsenAbstract:Abstract : PIN photodiodes fabricated from Indium Gallium Arsenide lattice-matched to Indium phosphide substrates (In(.53)Ga(.47)As/InP) exhibit low reverse saturation current densities (JD 10(exp 6) omega-sq cm) at T=290K. Backside-illuminated, hybrid-integrated InGaAs FPAs are sensitive from 0.9 micrometers to 1.7 micrometers. 290K detectivities, D(*), greater than 10(exp 14) cm-(square root of Hz/W) are demonstrated. This represents the highest room temperature detectivity of any infrared material. The long wavelength cutoff (1.7 micrometers) makes In(.53)Ga(.47)As an idea match to the available airglow that has major peaks at 1.3 micrometers and 1.6 micrometers. The short wavelength 'cut-on' at 0.9 micrometers is due to absorption in the InP substrate. We will report on new InGaAs FPA epitaxial structures and processing techniques. These have resulted in improved performance in the form of a 10 x increase in detectivity and visible response via removal of the InP substrate. The resulting device features visible and SWIR response with greater than 15% quantum efficiency at 0.5 micrometers while maintaining the long wavelength cutoff. Imaging has been demonstrated under overcast starlight/urban glow conditions with cooling provided by a single stage thermoelectric cooler. Details on the material structure and device fabrication, quantitative characterization of spectral response and detectivity, as well as examples of night vision imagery are presented.
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commercial and industrial applications of Indium Gallium Arsenide near infrared focal plane arrays
Proceedings of SPIE the International Society for Optical Engineering, 1999Co-Authors: Marshall J. Cohen, Martin H Ettenberg, M.j. Lange, G.h. OlsenAbstract:Sensors Unlimited, Inc. has developed focal pane arrays (FPAs) fabricated with Indium Gallium Arsenide (InGaAs) photodiode arrays and silicon CMOS readout integrated circuits. These devices are readily available in a wide variety of formats suitable for commercial and industrial applications. InGaAs FPAs are sensitive to the near IR, operate without cooling, and come in both 2D formats and 1D formats. 1D InGaAs FPAs are used as both spectroscopic detectors and line scan imagers. Key applications include miniature spectrometers used for wavelength control and monitoring of WDM laser sources, octane determination, the sorting o plastics during recycling, and web process control. 2D InGaAs FPAs find use in applications such as laser beam profiling, visualization of 'clear' ice on aircraft and roadways, and industrial thermal imaging.
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Substrate-thinned Indium Gallium Arsenide/Indium phosphide focal plane arrays for imaging from the visible through the near infrared
Technical Digest. Summaries of papers presented at the Conference on Lasers and Electro-Optics. Postconference Edition. CLEO '99. Conference on Lasers, 1999Co-Authors: M.j. Lange, Martin H Ettenberg, G.h. Olsen, J.s. Vermaak, M.j. Cohen, A.r. Sugg, S.r. Forrest, J.c. DriesAbstract:Summary form only given. A high-performance camera, based on a 320/spl times/240 element array of Indium Gallium Arsenide (In/sub .53/Ga/sub .47/As) photodiodes, has been specially fabricated to allow detection of light from the visible through the near infrared (0.5 /spl mu/m to 1.7 /spl mu/m). The overall structures of the starting epitaxial wafers and the final focal plane array are shown.
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substrate thinned Indium Gallium Arsenide Indium phosphide focal plane arrays for imaging from the visible through the near infrared
Conference on Lasers and Electro-Optics, 1999Co-Authors: M.j. Lange, Martin H Ettenberg, Marshall J. Cohen, G.h. Olsen, J.s. Vermaak, A.r. Sugg, S.r. Forrest, J.c. DriesAbstract:Summary form only given. A high-performance camera, based on a 320/spl times/240 element array of Indium Gallium Arsenide (In/sub .53/Ga/sub .47/As) photodiodes, has been specially fabricated to allow detection of light from the visible through the near infrared (0.5 /spl mu/m to 1.7 /spl mu/m). The overall structures of the starting epitaxial wafers and the final focal plane array are shown.
M.j. Lange - One of the best experts on this subject based on the ideXlab platform.
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Indium Gallium Arsenide imaging with smaller cameras higher resolution arrays and greater material sensitivity
SPIE milestone series, 2004Co-Authors: Martin H Ettenberg, Robert M Brubaker, Matthew T Ogrady, Marshall J. Cohen, M.j. Lange, G.h. OlsenAbstract:Indium Gallium Arsenide (InGaAs) photodiode arrays have numerous commercial, industrial, and military applications. During the past 10 years, great strides have been made in the development of these devices starting with simple 256-element linear photodiode arrays and progressing to the large 640 x 512 element area arrays now readily available. Linear arrays are offered with 512 elements on a 25 micron pitch with no defective pixels, and are used in spectroscopic monitors for wavelength division multiplexing (WDM) systems as well as in machine vision applications. A 320 x 240 solid-state array operates at room temperature, which allows development of a camera which is smaller than 25 cm 3 in volume, weighs less than 100 g and uses less than 750 mW of power. Two dimensional focal plane arrays and cameras have been manufactured with detectivity, D*, greater than 10 1 4 cm-Hz/W at room temperature and have demonstrated the ability to image at night. Cameras are also critical tools for the assembly and performance monitoring of optical switches and add-drop multiplexers in the telecommunications industry. These same cameras are used for the inspection of silicon wafers and fine art, laser beam profiling, and metals manufacturing. By varying the Indium content, InGaAs photodiode arrays can be tailored to cover the entire short-wave infrared spectrum from 1.0 micron to 2.5 microns. InGaAs focal plane arrays and cameras sensitive to 2.0 micron wavelength light are now available in 320 x 240 formats.
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an Indium Gallium Arsenide visible swir focal plane array for low light level imaging
1999Co-Authors: Marshall J. Cohen, Martin H Ettenberg, M.j. Lange, G.h. OlsenAbstract:Abstract : PIN photodiodes fabricated from Indium Gallium Arsenide lattice-matched to Indium phosphide substrates (In(.53)Ga(.47)As/InP) exhibit low reverse saturation current densities (JD 10(exp 6) omega-sq cm) at T=290K. Backside-illuminated, hybrid-integrated InGaAs FPAs are sensitive from 0.9 micrometers to 1.7 micrometers. 290K detectivities, D(*), greater than 10(exp 14) cm-(square root of Hz/W) are demonstrated. This represents the highest room temperature detectivity of any infrared material. The long wavelength cutoff (1.7 micrometers) makes In(.53)Ga(.47)As an idea match to the available airglow that has major peaks at 1.3 micrometers and 1.6 micrometers. The short wavelength 'cut-on' at 0.9 micrometers is due to absorption in the InP substrate. We will report on new InGaAs FPA epitaxial structures and processing techniques. These have resulted in improved performance in the form of a 10 x increase in detectivity and visible response via removal of the InP substrate. The resulting device features visible and SWIR response with greater than 15% quantum efficiency at 0.5 micrometers while maintaining the long wavelength cutoff. Imaging has been demonstrated under overcast starlight/urban glow conditions with cooling provided by a single stage thermoelectric cooler. Details on the material structure and device fabrication, quantitative characterization of spectral response and detectivity, as well as examples of night vision imagery are presented.
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An Indium Gallium Arsenide Visible/SWIR Focal Plane Array for Low Light Level Imaging
1999Co-Authors: Marshall J. Cohen, Martin H Ettenberg, M.j. Lange, Gregory H. OlsenAbstract:Abstract : PIN photodiodes fabricated from Indium Gallium Arsenide lattice-matched to Indium phosphide substrates (In(.53)Ga(.47)As/InP) exhibit low reverse saturation current densities (JD 10(exp 6) omega-sq cm) at T=290K. Backside-illuminated, hybrid-integrated InGaAs FPAs are sensitive from 0.9 micrometers to 1.7 micrometers. 290K detectivities, D(*), greater than 10(exp 14) cm-(square root of Hz/W) are demonstrated. This represents the highest room temperature detectivity of any infrared material. The long wavelength cutoff (1.7 micrometers) makes In(.53)Ga(.47)As an idea match to the available airglow that has major peaks at 1.3 micrometers and 1.6 micrometers. The short wavelength 'cut-on' at 0.9 micrometers is due to absorption in the InP substrate. We will report on new InGaAs FPA epitaxial structures and processing techniques. These have resulted in improved performance in the form of a 10 x increase in detectivity and visible response via removal of the InP substrate. The resulting device features visible and SWIR response with greater than 15% quantum efficiency at 0.5 micrometers while maintaining the long wavelength cutoff. Imaging has been demonstrated under overcast starlight/urban glow conditions with cooling provided by a single stage thermoelectric cooler. Details on the material structure and device fabrication, quantitative characterization of spectral response and detectivity, as well as examples of night vision imagery are presented.
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commercial and industrial applications of Indium Gallium Arsenide near infrared focal plane arrays
Proceedings of SPIE the International Society for Optical Engineering, 1999Co-Authors: Marshall J. Cohen, Martin H Ettenberg, M.j. Lange, G.h. OlsenAbstract:Sensors Unlimited, Inc. has developed focal pane arrays (FPAs) fabricated with Indium Gallium Arsenide (InGaAs) photodiode arrays and silicon CMOS readout integrated circuits. These devices are readily available in a wide variety of formats suitable for commercial and industrial applications. InGaAs FPAs are sensitive to the near IR, operate without cooling, and come in both 2D formats and 1D formats. 1D InGaAs FPAs are used as both spectroscopic detectors and line scan imagers. Key applications include miniature spectrometers used for wavelength control and monitoring of WDM laser sources, octane determination, the sorting o plastics during recycling, and web process control. 2D InGaAs FPAs find use in applications such as laser beam profiling, visualization of 'clear' ice on aircraft and roadways, and industrial thermal imaging.
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Substrate-thinned Indium Gallium Arsenide/Indium phosphide focal plane arrays for imaging from the visible through the near infrared
Technical Digest. Summaries of papers presented at the Conference on Lasers and Electro-Optics. Postconference Edition. CLEO '99. Conference on Lasers, 1999Co-Authors: M.j. Lange, Martin H Ettenberg, G.h. Olsen, J.s. Vermaak, M.j. Cohen, A.r. Sugg, S.r. Forrest, J.c. DriesAbstract:Summary form only given. A high-performance camera, based on a 320/spl times/240 element array of Indium Gallium Arsenide (In/sub .53/Ga/sub .47/As) photodiodes, has been specially fabricated to allow detection of light from the visible through the near infrared (0.5 /spl mu/m to 1.7 /spl mu/m). The overall structures of the starting epitaxial wafers and the final focal plane array are shown.
Qiang Li - One of the best experts on this subject based on the ideXlab platform.
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highly ordered horizontal Indium Gallium Arsenide Indium phosphide multi quantum well in wire structure on 001 silicon substrates
Journal of Applied Physics, 2016Co-Authors: Qiang LiAbstract:We report the characteristics of Indium Gallium Arsenide stacked quantum structures inside planar Indium phosphide nanowires grown on exact (001) silicon substrates. The morphological evolution of the Indium phosphide ridge buffers inside sub-micron trenches has been studied, and the role of inter-facet diffusion in this process is discussed. Inside a single Indium phosphide nanowire, we are able to stack quantum structures including Indium Gallium Arsenide flat quantum wells, quasi-quantum wires, quantum wires, and ridge quantum wells. Room temperature photoluminescence measurements reveal a broadband emission spectrum centered at 1550 nm. Power dependent photoluminescence analysis indicates the presence of quasi-continuum states. This work thus provides insights into the design and growth process control of multiple quantum wells in wire structures for high performance nanowire lasers on a silicon substrate with 1550 nm band emission.
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Highly ordered horizontal Indium Gallium Arsenide/Indium phosphide multi-quantum-well in wire structure on (001) silicon substrates
Journal of Applied Physics, 2016Co-Authors: Yu Han, Qiang LiAbstract:We report the characteristics of Indium Gallium Arsenide stacked quantum structures inside planar Indium phosphide nanowires grown on exact (001) silicon substrates. The morphological evolution of the Indium phosphide ridge buffers inside sub-micron trenches has been studied, and the role of inter-facet diffusion in this process is discussed. Inside a single Indium phosphide nanowire, we are able to stack quantum structures including Indium Gallium Arsenide flat quantum wells, quasi-quantum wires, quantum wires, and ridge quantum wells. Room temperature photoluminescence measurements reveal a broadband emission spectrum centered at 1550 nm. Power dependent photoluminescence analysis indicates the presence of quasi-continuum states. This work thus provides insights into the design and growth process control of multiple quantum wells in wire structures for high performance nanowire lasers on a silicon substrate with 1550 nm band emission.