The Experts below are selected from a list of 34338 Experts worldwide ranked by ideXlab platform
Rean-der Chien - One of the best experts on this subject based on the ideXlab platform.
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optimum Injection molding processing condition on emi shielding effectiveness of stainless steel fiber filled polycarbonate composite
International Communications in Heat and Mass Transfer, 2008Co-Authors: Chunsheng Chen, Weiren Chen, Shia-chung Chen, Rean-der ChienAbstract:Polycarbonate (PC) polymers mixed with conductive stainless steel fiber (SSF) is Injection-molded under various Injection process conditions. The composite formed is then tested for its capability to shield off electromagnetic field passing through. The effects of four major Injection processing parameters including melt temperature, mold temperature, Injection Velocity and packing pressure on the electromagnetic interference (EMI) shielding effectiveness (SE) of PC filled with conductive SSF have been investigated. Taguchi method is adopted to obtain the optimum set of Injection process parameters to acquire the maximum EMI shielding. It is observed that melt temperature and packing pressure significantly affect shielding effectiveness performance for Injection-molded PC composites with SSF filler.
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optimum Injection molding processing condition on emi shielding effectiveness of stainless steel fiber filled polycarbonate composite
International Communications in Heat and Mass Transfer, 2008Co-Authors: Chunsheng Chen, Weiren Chen, Shia-chung Chen, Rean-der ChienAbstract:Polycarbonate (PC) polymers mixed with conductive stainless steel fiber (SSF) is Injection-molded under various Injection process conditions. The composite formed is then tested for its capability to shield off electromagnetic field passing through. The effects of four major Injection processing parameters including melt temperature, mold temperature, Injection Velocity and packing pressure on the electromagnetic interference (EMI) shielding effectiveness (SE) of PC filled with conductive SSF have been investigated. Taguchi method is adopted to obtain the optimum set of Injection process parameters to acquire the maximum EMI shielding. It is observed that melt temperature and packing pressure significantly affect shielding effectiveness performance for Injection-molded PC composites with SSF filler.
Mark Lundstrom - One of the best experts on this subject based on the ideXlab platform.
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a physics based compact model for fets from diffusive to ballistic carrier transport regimes
International Electron Devices Meeting, 2014Co-Authors: Shaloo Rakheja, Mark Lundstrom, D A AntoniadisAbstract:This paper discusses a new emission-diffusion-based compact model for FETs to describe carrier transport in both short and long channel devices. The new model provides a description of the current at any drain bias without empirical fitting and predicts the Injection Velocity (device on-current). The new model is fully consistent with the widely used virtual-source model for describing transport in quasi-ballistic transistors. The accuracy of the new model is demonstrated by comparison with measured I–V data of III–V HEMTs and ETSOI silicon MOSFETs.
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corrections to on the ballistic Injection Velocity in deeply scaled mosfets aug 09 1674 1680
IEEE Transactions on Electron Devices, 2012Co-Authors: Yang Liu, D A Antoniadis, Mathieu Luisier, Amlan Majumdar, Mark LundstromAbstract:In the above-named article [ibid., vol. 59, no. 4, pp. 994-1001, Apr. 2012], the authors showed that the Velocity deduced by analyzing transistor I-V data with the virtual-source transistor model of Khakifirooz, et al. (2009) is not always the Velocity at the top of the energy barrier between the source and channel. Reference 1 in the Appendix of the original article (on screening in nanoscale MOSFETs) presented a qualitative explanation for why this discrepancy is more pronounced in Si MOSFETs than in III-V MOSFETs. This note points out an error in the original article but does not change the qualitative argument.
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on the interpretation of ballistic Injection Velocity in deeply scaled mosfets
IEEE Transactions on Electron Devices, 2012Co-Authors: Yang Liu, D A Antoniadis, Mathieu Luisier, Amlan Majumdar, Mark LundstromAbstract:The ballistic Injection Velocity is examined in state-of-the-art Si extremely thin SOI MOSFETs using ballistic quantum simulations and a virtual source (VS) compact model. The results indicate that the device performs at around 50%-60% of its ballistic limit and that the ballistic Injection Velocity at the top of the potential barrier (ToB), as obtained by numerical simulation, can be significantly lower than its counterpart extracted at the VS. This occurs because, at high drain bias, the ToB moves under the influence of gate bias toward the source contact, where additional mobile charge resides that are not directly induced by the gate contact but by the source contact. This effect becomes increasingly important as channel length shrinks and is affected by several factors, including the details of the source design. The accurate estimation of a physically meaning “Injection Velocity” under ballistic limit could be therefore very difficult in very short channel MOSFETs.
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a tight binding study of the ballistic Injection Velocity for ultrathin body soi mosfets
IEEE Transactions on Electron Devices, 2008Co-Authors: Yang Liu, Neophytos Neophytou, Tony Low, Gerhard Klimeck, Mark LundstromAbstract:This paper examines the validity of the widely used parabolic effective mass approximation by computing the ballistic Injection Velocity of a double-gate, ultrathin-body (UTB) n-MOSFET. The energy dispersion relations for a Si UTB are first computed by using a 20-band sp3d5s* -SO semiempirical atomistic tight-binding (TB) model coupled with a self-consistent Poisson solver. A semiclassical ballistic FET model is then used to evaluate the ballistic Injection Velocity of the n-type UTB MOSFET based on both an TB dispersion relation and parabolic energy bands. In comparison with the TB approach, the parabolic band model with bulk effective masses is found to be reasonably accurate as a first-order approximation until down to about 3 nm, where the ballistic Injection Velocity is significantly overestimated. Such significant nonparabolicity effects on ballistic Injection Velocity are observed for various surface/transport orientations. Meanwhile, the Injection Velocity shows strong dependence on the device structure as the thickness of the UTB changes. Finally, the Injection Velocity is found to have the same trend as mobility for different surface/transport orientations, indicating a correlation between them.
Furong Gao - One of the best experts on this subject based on the ideXlab platform.
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new design of state space linear quadratic fault tolerant tracking control for batch processes with partial actuator failure
Industrial & Engineering Chemistry Research, 2013Co-Authors: Ridong Zhang, Liangzhi Gan, Furong GaoAbstract:In this paper we present a new state space model based linear quadratic fault-tolerant tracking control scheme for batch processes with unknown disturbances and partial actuator faults. To develop the linear quadratic fault-tolerant control, the batch process is first treated with a new state space representation that incorporates both the state and the output tracking error dynamics. Then relevant concepts of the subsequent linear quadratic control are formulated, where improved closed-loop control performance is achieved even with unknown disturbances and actuator faults compared with traditional linear quadratic control. Application to Injection Velocity control shows that the proposed scheme achieves the design objective well with performance improvement.
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automatic Velocity profile determination for uniform filling in Injection molding
Polymer Engineering and Science, 2010Co-Authors: Xi Chen, Lei Zhang, Xiangsong Kong, Furong GaoAbstract:The filling phase plays an important role in determining the quality of Injection molded parts. Uniform melt-front Velocity has been recommended for minimizing the part non-uniformity. On the basis of a capacitive transducer that has been developed for online measurement of melt front Velocity, we propose an intelligent strategy for profiling Injection Velocity. The nonlinear response of melt development in a mold cavity is first acquired with a constant screw Injection Velocity. On the basis of this response, a stage division method is proposed to determine an appropriate stage number of a piecewise linear profile and the locations of the switch points. An optimization based on sequential simplex search is then conducted to search for the optimal profile of Injection Velocity. Online experimental tests on molds with different geometries show that the proposed method is effective in achieving a uniform mold filling. POLYM. ENG. SCI., 50:1358-1371, 2010. © 2010 Society of Plastics Engineers.
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Profiling of Injection Velocity for uniform mold filling
Advances in Polymer Technology, 2006Co-Authors: Xi Chen, Furong GaoAbstract:Uniform melt front Velocity is recommended for Injection mold filling to minimize the part nonuniformity. A method of profiling the Injection Velocity for such a uniform mold filling is presented in this paper. Based on a neural network model developed for estimating the melt flow length from online measurable variables, the profiling problem is transformed into an optimization to minimize the difference between the predicted melt flow length and a given ramp. The rate of the ramp determines the rate of the melt front Velocity traveling in the cavity during filling. Experiments with different molds show that the proposed method is effective in profiling the screw Injection Velocity to achieve a uniform mold filling. © 2006 Wiley Periodicals, Inc. Adv Polym Techn 25: 13–21, 2006; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/adv.20054
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adaptive control of the filling Velocity of thermoplastics Injection molding
Control Engineering Practice, 2000Co-Authors: Yi Yang, Furong GaoAbstract:Abstract Injection Velocity, a key variable in Injection molding, was controlled via an adaptive controller using a self-tuning regulator (STR) scheme. The pole-placement design was employed first, together with the performance enhancement techniques of anti-windup estimation, feed-forward control, and cycle-to-cycle adaptation. The pole-placement design with the enhancement techniques was found experimentally to work very well over different molding conditions. However, this design was also found to be sensitive to the model mismatch. To overcome this problem, a new adaptive controller based on a generalized predictive control (GPC) principle was designed to make the controller more robust. Experiments have shown that the adaptive GPC control of Injection Velocity has inherently good set-point tracking performance and excellent tolerance to model structure mismatch.
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Injection Velocity control using a self tuning adaptive controller
International Polymer Processing, 1999Co-Authors: Yi Yang, Furong GaoAbstract:Abstract The Injection Velocity dynamics are found to be both time-varying and non-linear and therefore difficult to control using a conventional fixed parameter controller. In this work, an adapti...
Chunsheng Chen - One of the best experts on this subject based on the ideXlab platform.
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optimum Injection molding processing condition on emi shielding effectiveness of stainless steel fiber filled polycarbonate composite
International Communications in Heat and Mass Transfer, 2008Co-Authors: Chunsheng Chen, Weiren Chen, Shia-chung Chen, Rean-der ChienAbstract:Polycarbonate (PC) polymers mixed with conductive stainless steel fiber (SSF) is Injection-molded under various Injection process conditions. The composite formed is then tested for its capability to shield off electromagnetic field passing through. The effects of four major Injection processing parameters including melt temperature, mold temperature, Injection Velocity and packing pressure on the electromagnetic interference (EMI) shielding effectiveness (SE) of PC filled with conductive SSF have been investigated. Taguchi method is adopted to obtain the optimum set of Injection process parameters to acquire the maximum EMI shielding. It is observed that melt temperature and packing pressure significantly affect shielding effectiveness performance for Injection-molded PC composites with SSF filler.
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optimum Injection molding processing condition on emi shielding effectiveness of stainless steel fiber filled polycarbonate composite
International Communications in Heat and Mass Transfer, 2008Co-Authors: Chunsheng Chen, Weiren Chen, Shia-chung Chen, Rean-der ChienAbstract:Polycarbonate (PC) polymers mixed with conductive stainless steel fiber (SSF) is Injection-molded under various Injection process conditions. The composite formed is then tested for its capability to shield off electromagnetic field passing through. The effects of four major Injection processing parameters including melt temperature, mold temperature, Injection Velocity and packing pressure on the electromagnetic interference (EMI) shielding effectiveness (SE) of PC filled with conductive SSF have been investigated. Taguchi method is adopted to obtain the optimum set of Injection process parameters to acquire the maximum EMI shielding. It is observed that melt temperature and packing pressure significantly affect shielding effectiveness performance for Injection-molded PC composites with SSF filler.
Yang Liu - One of the best experts on this subject based on the ideXlab platform.
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corrections to on the ballistic Injection Velocity in deeply scaled mosfets aug 09 1674 1680
IEEE Transactions on Electron Devices, 2012Co-Authors: Yang Liu, D A Antoniadis, Mathieu Luisier, Amlan Majumdar, Mark LundstromAbstract:In the above-named article [ibid., vol. 59, no. 4, pp. 994-1001, Apr. 2012], the authors showed that the Velocity deduced by analyzing transistor I-V data with the virtual-source transistor model of Khakifirooz, et al. (2009) is not always the Velocity at the top of the energy barrier between the source and channel. Reference 1 in the Appendix of the original article (on screening in nanoscale MOSFETs) presented a qualitative explanation for why this discrepancy is more pronounced in Si MOSFETs than in III-V MOSFETs. This note points out an error in the original article but does not change the qualitative argument.
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on the interpretation of ballistic Injection Velocity in deeply scaled mosfets
IEEE Transactions on Electron Devices, 2012Co-Authors: Yang Liu, D A Antoniadis, Mathieu Luisier, Amlan Majumdar, Mark LundstromAbstract:The ballistic Injection Velocity is examined in state-of-the-art Si extremely thin SOI MOSFETs using ballistic quantum simulations and a virtual source (VS) compact model. The results indicate that the device performs at around 50%-60% of its ballistic limit and that the ballistic Injection Velocity at the top of the potential barrier (ToB), as obtained by numerical simulation, can be significantly lower than its counterpart extracted at the VS. This occurs because, at high drain bias, the ToB moves under the influence of gate bias toward the source contact, where additional mobile charge resides that are not directly induced by the gate contact but by the source contact. This effect becomes increasingly important as channel length shrinks and is affected by several factors, including the details of the source design. The accurate estimation of a physically meaning “Injection Velocity” under ballistic limit could be therefore very difficult in very short channel MOSFETs.
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a tight binding study of the ballistic Injection Velocity for ultrathin body soi mosfets
IEEE Transactions on Electron Devices, 2008Co-Authors: Yang Liu, Neophytos Neophytou, Tony Low, Gerhard Klimeck, Mark LundstromAbstract:This paper examines the validity of the widely used parabolic effective mass approximation by computing the ballistic Injection Velocity of a double-gate, ultrathin-body (UTB) n-MOSFET. The energy dispersion relations for a Si UTB are first computed by using a 20-band sp3d5s* -SO semiempirical atomistic tight-binding (TB) model coupled with a self-consistent Poisson solver. A semiclassical ballistic FET model is then used to evaluate the ballistic Injection Velocity of the n-type UTB MOSFET based on both an TB dispersion relation and parabolic energy bands. In comparison with the TB approach, the parabolic band model with bulk effective masses is found to be reasonably accurate as a first-order approximation until down to about 3 nm, where the ballistic Injection Velocity is significantly overestimated. Such significant nonparabolicity effects on ballistic Injection Velocity are observed for various surface/transport orientations. Meanwhile, the Injection Velocity shows strong dependence on the device structure as the thickness of the UTB changes. Finally, the Injection Velocity is found to have the same trend as mobility for different surface/transport orientations, indicating a correlation between them.