The Experts below are selected from a list of 3813 Experts worldwide ranked by ideXlab platform
Sergio Brovelli - One of the best experts on this subject based on the ideXlab platform.
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fully Inorganic Oxide in Oxide ultraviolet nanocrystal light emitting devices
Nature Communications, 2012Co-Authors: Sergio Brovelli, Alessandro Lauria, N Chiodini, Marco Romagnoli, Roberto Lorenzi, A. PaleariAbstract:Light-emitting diodes in the form of nanocrystals offer promise for environmental and biomedical diagnostics. Brovelli et al. present a method for realizing mechanically robust and chemically stable nanocrystals emitting light in the ultraviolet range.
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Fully Inorganic Oxide-in-Oxide ultraviolet nanocrystal light emitting devices
Nature Communications, 2012Co-Authors: Sergio Brovelli, Alessandro Lauria, N Chiodini, Marco Romagnoli, Roberto Lorenzi, A. PaleariAbstract:The development of integrated photonics and lab-on-a-chip platforms for environmental and biomedical diagnostics demands ultraviolet electroluminescent materials with high mechanical, chemical and environmental stability and almost complete compatibility with existing silicon technology. Here we report the realization of fully Inorganic ultraviolet light-emitting diodes emitting at 390 nm with a maximum external quantum efficiency of ∼0.3%, based on SnO 2 nanoparticles embedded in SiO 2 thin films obtained from a solution-processed method. The fabrication involves a single deposition step onto a silicon wafer followed by a thermal treatment in a controlled atmosphere. The fully Inorganic architecture ensures superior mechanical robustness and optimal chemical stability in organic solvents and aqueous solutions. The versatility of the fabrication process broadens the possibility of optimizing this strategy and extending it to other nanostructured systems for designed applications, such as active components of wearable health monitors or biomedical devices. © 2012 Macmillan Publishers Limited. All rights reserved.
Horst Hahn - One of the best experts on this subject based on the ideXlab platform.
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electrolyte gated high mobility Inorganic Oxide transistors from printed metal halides
ACS Applied Materials & Interfaces, 2013Co-Authors: Suresh Kumar Garlapati, Horst Hahn, Robert Kruk, Ramona Hahn, Simone Dehm, N C Mishra, Subho DasguptaAbstract:Inkjet printed and low voltage (≤1 V) driven field-effect transistors (FETs) are prepared from precursor-made In2O3 as the transistor channel and a composite solid polymer electrolyte (CSPE) as the gate dielectric. Printed halide precursors are annealed at different temperatures (300–500 °C); however, the devices that are heated to 400 °C demonstrate the best electrical performance including field-effect mobility as high as 126 cm2 V–1 s–1 and subthreshold slope (68 mV/dec) close to the theoretical limit. These outstanding device characteristics in combination with ease of fabrication, moderate annealing temperatures and low voltage operation comprise an attractive set of parameters for battery compatible and portable electronics.
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printed and electrochemically gated high mobility Inorganic Oxide nanoparticle fets and their suitability for high frequency applications
Advanced Functional Materials, 2012Co-Authors: Subho Dasgupta, Horst Hahn, Robert Kruk, Ganna Stoesser, Nina Schweikert, Ramona Hahn, Simone DehmAbstract:Solution-processed or printed n-channel field-effect transistors (FETs) with high performance are not reported very often in the literature due to the scarcity of high-mobility n-type organic semiconductors. On the other hand, low-temperature processed n-channel metal Oxide semiconductor (NMOS) transistors from electron conducting Inorganic-Oxide nanoparticles show reduced-performance and low mobility because of large channel roughness at the channel-dielectric interface. Here, a method to produce ink-jet printed high performance NMOS transistor devices using Inorganic-Oxide nanoparticles as the transistor channel in combination with a 3D electrochemical gating (EG) via printed composite solid polymer electrolytes is presented. The printed FETs produced show a device mobility value in excess of 5 cm2 V−1 s−1, even though the root mean square (RMS) roughness of the nanoparticulate channel exceeds 15 nm. Extensive studies on the frequency dependent polarizability of composite polymer electrolyte capacitors show that the maximum attainable speed in such printed, long channel transistors is not limited by the ionic conductivity of the electrolytes. Therefore, the approach of combining printable, high-quality Oxide nanoparticles and the composite solid polymer electrolytes, offers the possibility to fully utilize the large mobility of Oxide semiconductors to build all-printed and high-speed devices. The high polarizability of printable polymer electrolytes brings down the drive voltages to ≤1 V, making such FETs well-suited for low-power, battery compatible circuitry.
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Printed and Electrochemically Gated, High‐Mobility, Inorganic Oxide Nanoparticle FETs and Their Suitability for High‐Frequency Applications
Advanced Functional Materials, 2012Co-Authors: Subho Dasgupta, Robert Kruk, Ganna Stoesser, Nina Schweikert, Ramona Hahn, Simone Dehm, Horst HahnAbstract:Solution-processed or printed n-channel field-effect transistors (FETs) with high performance are not reported very often in the literature due to the scarcity of high-mobility n-type organic semiconductors. On the other hand, low-temperature processed n-channel metal Oxide semiconductor (NMOS) transistors from electron conducting Inorganic-Oxide nanoparticles show reduced-performance and low mobility because of large channel roughness at the channel-dielectric interface. Here, a method to produce ink-jet printed high performance NMOS transistor devices using Inorganic-Oxide nanoparticles as the transistor channel in combination with a 3D electrochemical gating (EG) via printed composite solid polymer electrolytes is presented. The printed FETs produced show a device mobility value in excess of 5 cm2 V−1 s−1, even though the root mean square (RMS) roughness of the nanoparticulate channel exceeds 15 nm. Extensive studies on the frequency dependent polarizability of composite polymer electrolyte capacitors show that the maximum attainable speed in such printed, long channel transistors is not limited by the ionic conductivity of the electrolytes. Therefore, the approach of combining printable, high-quality Oxide nanoparticles and the composite solid polymer electrolytes, offers the possibility to fully utilize the large mobility of Oxide semiconductors to build all-printed and high-speed devices. The high polarizability of printable polymer electrolytes brings down the drive voltages to ≤1 V, making such FETs well-suited for low-power, battery compatible circuitry.
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inkjet printed high mobility Inorganic Oxide field effect transistors processed at room temperature
ACS Nano, 2011Co-Authors: Subho Dasgupta, Norman Mechau, Robert Kruk, Horst HahnAbstract:Printed electronics (PE) represents any electronic devices, components or circuits that can be processed using modern-day printing techniques. Field-effect transistors (FETs) and logics are being printed with intended applications requiring simple circuitry on large, flexible (e.g., polymer) substrates for low-cost and disposable electronics. Although organic materials have commonly been chosen for their easy printability and low temperature processability, high quality Inorganic Oxide-semiconductors are also being considered recently. The intrinsic mobility of the Inorganic semiconductors are always by far superior than the organic ones; however, the commonly expressed reservations against the Inorganic-based printed electronics are due to major issues, such as high processing temperatures and their incompatibility with solution-processing. Here we show a possibility to circumvent these difficulties and demonstrate a room-temperature processed and inkjet printed Inorganic-Oxide FET where the transistor c...
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Inkjet printed, high mobility Inorganic-Oxide field effect transistors processed at room temperature
ACS Nano, 2011Co-Authors: Soura Dasgupta, Norman Mechau, Subho Dasgupta, Robert Kruk, Horst HahnAbstract:Printed electronics (PE) represents any electronic devices, components or circuits that can be processed using modern-day printing techniques. Field-effect transistors (FETs) and logics are being printed with intended applications requiring simple circuitry on large, flexible (e.g., polymer) substrates for low-cost and disposable electronics. Although organic materials have commonly been chosen for their easy printability and low temperature processability, high quality Inorganic Oxide-semiconductors are also being considered recently. The intrinsic mobility of the Inorganic semiconductors are always by far superior than the organic ones; however, the commonly expressed reservations against the Inorganic-based printed electronics are due to major issues, such as high processing temperatures and their incompatibility with solution-processing. Here we show a possibility to circumvent these difficulties and demonstrate a room-temperature processed and inkjet printed Inorganic-Oxide FET where the transistor channel is composed of an interconnected nanoparticle network and a solid polymer electrolyte serves as the dielectric. Even an extremely conservative estimation of the field-effect mobility of such a device yields a value of 0.8 cm(2)/(V s), which is still exceptionally large for a room temperature processed and printed transistor from Inorganic materials.
A. Paleari - One of the best experts on this subject based on the ideXlab platform.
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fully Inorganic Oxide in Oxide ultraviolet nanocrystal light emitting devices
Nature Communications, 2012Co-Authors: Sergio Brovelli, Alessandro Lauria, N Chiodini, Marco Romagnoli, Roberto Lorenzi, A. PaleariAbstract:Light-emitting diodes in the form of nanocrystals offer promise for environmental and biomedical diagnostics. Brovelli et al. present a method for realizing mechanically robust and chemically stable nanocrystals emitting light in the ultraviolet range.
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Fully Inorganic Oxide-in-Oxide ultraviolet nanocrystal light emitting devices
Nature Communications, 2012Co-Authors: Sergio Brovelli, Alessandro Lauria, N Chiodini, Marco Romagnoli, Roberto Lorenzi, A. PaleariAbstract:The development of integrated photonics and lab-on-a-chip platforms for environmental and biomedical diagnostics demands ultraviolet electroluminescent materials with high mechanical, chemical and environmental stability and almost complete compatibility with existing silicon technology. Here we report the realization of fully Inorganic ultraviolet light-emitting diodes emitting at 390 nm with a maximum external quantum efficiency of ∼0.3%, based on SnO 2 nanoparticles embedded in SiO 2 thin films obtained from a solution-processed method. The fabrication involves a single deposition step onto a silicon wafer followed by a thermal treatment in a controlled atmosphere. The fully Inorganic architecture ensures superior mechanical robustness and optimal chemical stability in organic solvents and aqueous solutions. The versatility of the fabrication process broadens the possibility of optimizing this strategy and extending it to other nanostructured systems for designed applications, such as active components of wearable health monitors or biomedical devices. © 2012 Macmillan Publishers Limited. All rights reserved.
Subho Dasgupta - One of the best experts on this subject based on the ideXlab platform.
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electrolyte gated high mobility Inorganic Oxide transistors from printed metal halides
ACS Applied Materials & Interfaces, 2013Co-Authors: Suresh Kumar Garlapati, Horst Hahn, Robert Kruk, Ramona Hahn, Simone Dehm, N C Mishra, Subho DasguptaAbstract:Inkjet printed and low voltage (≤1 V) driven field-effect transistors (FETs) are prepared from precursor-made In2O3 as the transistor channel and a composite solid polymer electrolyte (CSPE) as the gate dielectric. Printed halide precursors are annealed at different temperatures (300–500 °C); however, the devices that are heated to 400 °C demonstrate the best electrical performance including field-effect mobility as high as 126 cm2 V–1 s–1 and subthreshold slope (68 mV/dec) close to the theoretical limit. These outstanding device characteristics in combination with ease of fabrication, moderate annealing temperatures and low voltage operation comprise an attractive set of parameters for battery compatible and portable electronics.
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printed and electrochemically gated high mobility Inorganic Oxide nanoparticle fets and their suitability for high frequency applications
Advanced Functional Materials, 2012Co-Authors: Subho Dasgupta, Horst Hahn, Robert Kruk, Ganna Stoesser, Nina Schweikert, Ramona Hahn, Simone DehmAbstract:Solution-processed or printed n-channel field-effect transistors (FETs) with high performance are not reported very often in the literature due to the scarcity of high-mobility n-type organic semiconductors. On the other hand, low-temperature processed n-channel metal Oxide semiconductor (NMOS) transistors from electron conducting Inorganic-Oxide nanoparticles show reduced-performance and low mobility because of large channel roughness at the channel-dielectric interface. Here, a method to produce ink-jet printed high performance NMOS transistor devices using Inorganic-Oxide nanoparticles as the transistor channel in combination with a 3D electrochemical gating (EG) via printed composite solid polymer electrolytes is presented. The printed FETs produced show a device mobility value in excess of 5 cm2 V−1 s−1, even though the root mean square (RMS) roughness of the nanoparticulate channel exceeds 15 nm. Extensive studies on the frequency dependent polarizability of composite polymer electrolyte capacitors show that the maximum attainable speed in such printed, long channel transistors is not limited by the ionic conductivity of the electrolytes. Therefore, the approach of combining printable, high-quality Oxide nanoparticles and the composite solid polymer electrolytes, offers the possibility to fully utilize the large mobility of Oxide semiconductors to build all-printed and high-speed devices. The high polarizability of printable polymer electrolytes brings down the drive voltages to ≤1 V, making such FETs well-suited for low-power, battery compatible circuitry.
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Printed and Electrochemically Gated, High‐Mobility, Inorganic Oxide Nanoparticle FETs and Their Suitability for High‐Frequency Applications
Advanced Functional Materials, 2012Co-Authors: Subho Dasgupta, Robert Kruk, Ganna Stoesser, Nina Schweikert, Ramona Hahn, Simone Dehm, Horst HahnAbstract:Solution-processed or printed n-channel field-effect transistors (FETs) with high performance are not reported very often in the literature due to the scarcity of high-mobility n-type organic semiconductors. On the other hand, low-temperature processed n-channel metal Oxide semiconductor (NMOS) transistors from electron conducting Inorganic-Oxide nanoparticles show reduced-performance and low mobility because of large channel roughness at the channel-dielectric interface. Here, a method to produce ink-jet printed high performance NMOS transistor devices using Inorganic-Oxide nanoparticles as the transistor channel in combination with a 3D electrochemical gating (EG) via printed composite solid polymer electrolytes is presented. The printed FETs produced show a device mobility value in excess of 5 cm2 V−1 s−1, even though the root mean square (RMS) roughness of the nanoparticulate channel exceeds 15 nm. Extensive studies on the frequency dependent polarizability of composite polymer electrolyte capacitors show that the maximum attainable speed in such printed, long channel transistors is not limited by the ionic conductivity of the electrolytes. Therefore, the approach of combining printable, high-quality Oxide nanoparticles and the composite solid polymer electrolytes, offers the possibility to fully utilize the large mobility of Oxide semiconductors to build all-printed and high-speed devices. The high polarizability of printable polymer electrolytes brings down the drive voltages to ≤1 V, making such FETs well-suited for low-power, battery compatible circuitry.
-
inkjet printed high mobility Inorganic Oxide field effect transistors processed at room temperature
ACS Nano, 2011Co-Authors: Subho Dasgupta, Norman Mechau, Robert Kruk, Horst HahnAbstract:Printed electronics (PE) represents any electronic devices, components or circuits that can be processed using modern-day printing techniques. Field-effect transistors (FETs) and logics are being printed with intended applications requiring simple circuitry on large, flexible (e.g., polymer) substrates for low-cost and disposable electronics. Although organic materials have commonly been chosen for their easy printability and low temperature processability, high quality Inorganic Oxide-semiconductors are also being considered recently. The intrinsic mobility of the Inorganic semiconductors are always by far superior than the organic ones; however, the commonly expressed reservations against the Inorganic-based printed electronics are due to major issues, such as high processing temperatures and their incompatibility with solution-processing. Here we show a possibility to circumvent these difficulties and demonstrate a room-temperature processed and inkjet printed Inorganic-Oxide FET where the transistor c...
-
Inkjet printed, high mobility Inorganic-Oxide field effect transistors processed at room temperature
ACS Nano, 2011Co-Authors: Soura Dasgupta, Norman Mechau, Subho Dasgupta, Robert Kruk, Horst HahnAbstract:Printed electronics (PE) represents any electronic devices, components or circuits that can be processed using modern-day printing techniques. Field-effect transistors (FETs) and logics are being printed with intended applications requiring simple circuitry on large, flexible (e.g., polymer) substrates for low-cost and disposable electronics. Although organic materials have commonly been chosen for their easy printability and low temperature processability, high quality Inorganic Oxide-semiconductors are also being considered recently. The intrinsic mobility of the Inorganic semiconductors are always by far superior than the organic ones; however, the commonly expressed reservations against the Inorganic-based printed electronics are due to major issues, such as high processing temperatures and their incompatibility with solution-processing. Here we show a possibility to circumvent these difficulties and demonstrate a room-temperature processed and inkjet printed Inorganic-Oxide FET where the transistor channel is composed of an interconnected nanoparticle network and a solid polymer electrolyte serves as the dielectric. Even an extremely conservative estimation of the field-effect mobility of such a device yields a value of 0.8 cm(2)/(V s), which is still exceptionally large for a room temperature processed and printed transistor from Inorganic materials.
Alessandro Lauria - One of the best experts on this subject based on the ideXlab platform.
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fully Inorganic Oxide in Oxide ultraviolet nanocrystal light emitting devices
Nature Communications, 2012Co-Authors: Sergio Brovelli, Alessandro Lauria, N Chiodini, Marco Romagnoli, Roberto Lorenzi, A. PaleariAbstract:Light-emitting diodes in the form of nanocrystals offer promise for environmental and biomedical diagnostics. Brovelli et al. present a method for realizing mechanically robust and chemically stable nanocrystals emitting light in the ultraviolet range.
-
Fully Inorganic Oxide-in-Oxide ultraviolet nanocrystal light emitting devices
Nature Communications, 2012Co-Authors: Sergio Brovelli, Alessandro Lauria, N Chiodini, Marco Romagnoli, Roberto Lorenzi, A. PaleariAbstract:The development of integrated photonics and lab-on-a-chip platforms for environmental and biomedical diagnostics demands ultraviolet electroluminescent materials with high mechanical, chemical and environmental stability and almost complete compatibility with existing silicon technology. Here we report the realization of fully Inorganic ultraviolet light-emitting diodes emitting at 390 nm with a maximum external quantum efficiency of ∼0.3%, based on SnO 2 nanoparticles embedded in SiO 2 thin films obtained from a solution-processed method. The fabrication involves a single deposition step onto a silicon wafer followed by a thermal treatment in a controlled atmosphere. The fully Inorganic architecture ensures superior mechanical robustness and optimal chemical stability in organic solvents and aqueous solutions. The versatility of the fabrication process broadens the possibility of optimizing this strategy and extending it to other nanostructured systems for designed applications, such as active components of wearable health monitors or biomedical devices. © 2012 Macmillan Publishers Limited. All rights reserved.