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Ram Kripal - One of the best experts on this subject based on the ideXlab platform.
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zero field splitting parameters of mn2 in bis l asparaginato zn ii at Interstitial orthorhombic symmetry Site
Spectrochimica Acta Part A: Molecular and Biomolecular Spectroscopy, 2012Co-Authors: Sangita Pandey, Ram KripalAbstract:Abstract The superposition model is used to calculate the crystal field parameters (CFPs) of Mn2+ in Bis ( l -asparaginato) Zn (II). The zero field splitting parameters (ZFSPs) D and E are then investigated using perturbation theory and microscopic spin Hamiltonian (SH) theory. The calculated ZFS parameters are compared with the experimental values obtained by electron paramagnetic resonance. Both the zero field splitting parameters (ZFSPs) D and E evaluated theoretically are in good agreement with the experimental values. The results support the notion that the Mn2+ ion occupies Interstitial Site in Bis ( l -asparaginato) Zn (II).
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Theoretical investigation of zero field splitting parameters for Mn2+ centres in L-asparagine monohydrate.
Spectrochimica acta. Part A Molecular and biomolecular spectroscopy, 2011Co-Authors: Ram Kripal, Shri Devi PandeyAbstract:Abstract Zero-field splitting (ZFS) parameters D and E are calculated using the point-charge model (PCM) and superposition model (SPM) for Mn 2+ centre in l -asparagine monohydrate (LAM) single crystal. The calculated ZFS parameters obtained using these two models are compared with the experimental values for Interstitial Site of Mn 2+ . The SPM and PCM give ZFS parameters similar to those of experimental ones. This supports the notion that the impurity ion occupies Interstitial Site in LAM.
Nigel D. Browning - One of the best experts on this subject based on the ideXlab platform.
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ultralow contact resistance at an epitaxial metal oxide heterojunction through Interstitial Site doping
Advanced Materials, 2013Co-Authors: Scott A. Chambers, Peter V. Sushko, Hao Yang, Chongmin Wang, Nigel D. BrowningAbstract:Heteroepitaxial growth of Cr metal on Nb-doped SrTiO₃(001) is accompanied by Cr diffusion to Interstitial Sites within the first few atomic planes, an anchoring of the Cr film to the substrate, charge transfer from Cr to Ti, and metallization of the near-surface region, as depicted in the figure. The contact resistance of the resulting interface is exceedingly low.
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Ultralow Contact Resistance at an Epitaxial Metal/Oxide Heterojunction Through Interstitial Site Doping
Advanced materials (Deerfield Beach Fla.), 2013Co-Authors: Scott A. Chambers, Peter V. Sushko, Hao Yang, Chongmin Wang, Nigel D. BrowningAbstract:Heteroepitaxial growth of Cr metal on Nb-doped SrTiO₃(001) is accompanied by Cr diffusion to Interstitial Sites within the first few atomic planes, an anchoring of the Cr film to the substrate, charge transfer from Cr to Ti, and metallization of the near-surface region, as depicted in the figure. The contact resistance of the resulting interface is exceedingly low.
Weixin Huang - One of the best experts on this subject based on the ideXlab platform.
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Spectroscopic study of microstructure-reducibility relation of CexZr1−xO2 solid solutions
Applied Surface Science, 2018Co-Authors: Huizhi Bao, Kun Qian, Xiaoqi Chen, Jun Fang, Weixin HuangAbstract:Abstract We have successfully elucidated the microstructures of CexZr1−xO2 solid solutions prepared by co-precipitation and their relation with the reduction behaviors. X-ray absorption spectroscopy and X-ray photoelectron spectroscopy results demonstrate that Zr(IV) occupies initially substituting Site and then Interstitial Site in cubic CeO2. The accumulation of Zr(IV) in Interstitial Site induces the gradual phase transition from cubic phase to tetragonal phase. The results of selective chemisorption of methyl orange demonstrate that the substituting-Site doping of Zr(IV) preferentially occurs in the bulk and then extends to the outmost surface. H2 temperature-programmed reduction results indicate that the substituting-Site doping of Zr(IV) mainly enhances the reducibility of Ce(IV) whereas the Interstitial-Site doping of Zr(IV) not only enhances the reducibility of Ce(IV) but also lowers the activation energy of reduction reaction. These results provide novel insights into the microstructure-reducibility relation of CexZr1−xO2 solid solutions.
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fe doped ceo 2 solid solutions substituting Site doping versus Interstitial Site doping bulk doping versus surface doping
Applied Surface Science, 2017Co-Authors: Huizhi Bao, Kun Qian, Jun Fang, Weixin HuangAbstract:Abstract Doping CeO2 cubic fluorite with transitional metal ions can effectively improve its redox behavior, oxygen storage capacity and catalytic performance, but the relevant fundamental understanding of the promotion effect is still insufficient due to the difficulty on determining the distribution of dopant. We herein demonstrate an effective approach to determine this dopant distribution by combining X-ray absorption spectroscopy and selective chemisorption. Cubic CexFe1-xO2 fluorite solid solutions (x ≥ 0.70) were prepared by co-precipitation method. With the increasing of Fe molar ratio in CexFe1-xO2, Fe3+ initially substitutes Ce4+ and/or occupy intersitial Sites with x ≥ 0.80, and then transfers to form sub-Fe2O3 structure in fluorite lattice as more Fe3+ are present; meanwhile, the Fe3+ doping initially occurs only in the bulk with x ≥ 0.96 and then extends to the surface with 0.87 ≤ x
Scott A. Chambers - One of the best experts on this subject based on the ideXlab platform.
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ultralow contact resistance at an epitaxial metal oxide heterojunction through Interstitial Site doping
Advanced Materials, 2013Co-Authors: Scott A. Chambers, Peter V. Sushko, Hao Yang, Chongmin Wang, Nigel D. BrowningAbstract:Heteroepitaxial growth of Cr metal on Nb-doped SrTiO₃(001) is accompanied by Cr diffusion to Interstitial Sites within the first few atomic planes, an anchoring of the Cr film to the substrate, charge transfer from Cr to Ti, and metallization of the near-surface region, as depicted in the figure. The contact resistance of the resulting interface is exceedingly low.
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Ultralow Contact Resistance at an Epitaxial Metal/Oxide Heterojunction Through Interstitial Site Doping
Advanced materials (Deerfield Beach Fla.), 2013Co-Authors: Scott A. Chambers, Peter V. Sushko, Hao Yang, Chongmin Wang, Nigel D. BrowningAbstract:Heteroepitaxial growth of Cr metal on Nb-doped SrTiO₃(001) is accompanied by Cr diffusion to Interstitial Sites within the first few atomic planes, an anchoring of the Cr film to the substrate, charge transfer from Cr to Ti, and metallization of the near-surface region, as depicted in the figure. The contact resistance of the resulting interface is exceedingly low.
Sambasiva P Rao - One of the best experts on this subject based on the ideXlab platform.
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single crystal epr study of mn ii doped mgrb2 so4 2 6h2o a case of Interstitial Site
ChemInform, 2007Co-Authors: B Sankar, B Natarajan, S Mithira, H Anandhalakshmi, Sambasiva P RaoAbstract:Single crystal electron paramagnetic resonance studies on magnesium rubidium sulphate hexahydrate doped with Mn(II) impurity, in the form of 0.1% of manganous chloride, are carried out at room temperature. The angular variation spectra of the crystal in the three orthogonal planes show that the paramagnetic impurity Mn(II) has entered the host lattice Interstitially. The spin Hamiltonian parameters calculated are: gxx = 1.974, gyy = 1.928, gzz = 1.980; Axx = 9.28, Ayy = 8.58, Azz = 9.87 mT and Dxx = -18.71, Dyy = -5.59, Dzz = 24.30 mT. The room temperature and liquid nitrogen temperature study for polycrystalline sample indicate no phase transition. The percentage covalency of Mn–O bond has been estimated to be 11. (© 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
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single crystal epr studies of mn ii doped into zinc ammonium phosphate hexahydrate znnh4po4 6h2o a case of Interstitial Site for bio mineral analogue
Pramana, 2004Co-Authors: H. Anandalakshmi, K. Velavan, I. Sougandi, Rengarajan Venkatesan, Sambasiva P RaoAbstract:Single crystal EPR studies of Mn(II)-doped zinc ammonium phosphate hexahydrate (ZnNH4PC4·6H2O) have been reinvestigated at room temperature. Single crystal rotations along the three orthogonal axes indicate that the spin Hamiltonian parameters for the Interstitial Site are:g xx = 1.966,g yy = 1.972,g zz = 1.976;D xx = -12.28 mT,D yy = -2.09 mT andD zz = 14.37 mT;A xx = 9.06 mT,A yy = 9.06 mT andA zz = 11.09 mT;a = -0.11 mT. These parameters differ considerably from the previous report of Chand and Agarwal and indicate the orthorhombic nature of the paramagnetic impurity. The impurity is found to enter the lattice Interstitially, in contrast to earlier prediction of substitutional position. The percentage covalency of the Mn-0 bond has been estimated.
