Junction Diode

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The Experts below are selected from a list of 8364 Experts worldwide ranked by ideXlab platform

Jinhong Park - One of the best experts on this subject based on the ideXlab platform.

Seong Uk Yang - One of the best experts on this subject based on the ideXlab platform.

Kuniharu Takei - One of the best experts on this subject based on the ideXlab platform.

  • all solution based heterogeneous material formation for p n Junction Diodes
    ACS Applied Materials & Interfaces, 2019
    Co-Authors: Daisuke Yamamoto, Mao Shiomi, Takayuki Arie, Seiji Akita, Kuniharu Takei
    Abstract:

    All-solution-based devices have potential as the next class of macroscale and multifunctional electronics on versatile amorphous substrates. Different methods and materials have been studied to control the formation of p-type and n-type semiconducting materials because forming active materials for transistors and sensors remains a challenge. This study proposes an approach for solution-based devices in which a p–n Junction Diode is fabricated using a solution-based InZnO thin film for the n-type semiconductor and a carbon nanotube network film for the p-type semiconductor. Additionally, the barrier height (∼160 meV) is extracted and a p–n Junction Diode on a plastic film is demonstrated. Although the performance requires further improvements by modifying the interfaces, this printing method may be an interesting approach for all-printed electronics, which can replace conventional Si electronics.

  • All-Solution-Based Heterogeneous Material Formation for p–n Junction Diodes
    ACS Applied Materials & Interfaces, 2018
    Co-Authors: Daisuke Yamamoto, Mao Shiomi, Takayuki Arie, Seiji Akita, Kuniharu Takei
    Abstract:

    All-solution-based devices have potential as the next class of macroscale and multifunctional electronics on versatile amorphous substrates. Different methods and materials have been studied to control the formation of p-type and n-type semiconducting materials because forming active materials for transistors and sensors remains a challenge. This study proposes an approach for solution-based devices in which a p–n Junction Diode is fabricated using a solution-based InZnO thin film for the n-type semiconductor and a carbon nanotube network film for the p-type semiconductor. Additionally, the barrier height (∼160 meV) is extracted and a p–n Junction Diode on a plastic film is demonstrated. Although the performance requires further improvements by modifying the interfaces, this printing method may be an interesting approach for all-printed electronics, which can replace conventional Si electronics.

Seung Ha Choi - One of the best experts on this subject based on the ideXlab platform.

Hyunyong Yu - One of the best experts on this subject based on the ideXlab platform.