The Experts below are selected from a list of 8364 Experts worldwide ranked by ideXlab platform
Jinhong Park - One of the best experts on this subject based on the ideXlab platform.
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depth controllable ultra shallow indium gallium zinc oxide gallium arsenide hetero Junction Diode
Journal of Alloys and Compounds, 2013Co-Authors: Seong Uk Yang, Seung Ha Choi, Wooshik Jung, Hyunyong Yu, Jinhong ParkAbstract:One of the challenges for the III–V semiconductor-based nanometer-scale device fabrication is to achieve ultra-shallow Junction Diode. In this letter, we demonstrate a Junction depth-controllable ultra-shallow (15 nm) n-IGZO/p-GaAs hetero-Junction Diode at a low temperature (300 C). Through TOF-SIMS, J–V measurement, and HSC chemistry simulation, n-IGZO/p-GaAs Junctions are carefully investigated. Oncurrent density (0.02 A/cm 2
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Depth-controllable ultra shallow Indium Gallium Zinc Oxide/Gallium Arsenide hetero Junction Diode
Journal of Alloys and Compounds, 2013Co-Authors: Seong Uk Yang, Seung Ha Choi, Wooshik Jung, Hyunyong Yu, Jinhong ParkAbstract:One of the challenges for the III–V semiconductor-based nanometer-scale device fabrication is to achieve ultra-shallow Junction Diode. In this letter, we demonstrate a Junction depth-controllable ultra-shallow (15 nm) n-IGZO/p-GaAs hetero-Junction Diode at a low temperature (300 C). Through TOF-SIMS, J–V measurement, and HSC chemistry simulation, n-IGZO/p-GaAs Junctions are carefully investigated. Oncurrent density (0.02 A/cm 2
Seong Uk Yang - One of the best experts on this subject based on the ideXlab platform.
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depth controllable ultra shallow indium gallium zinc oxide gallium arsenide hetero Junction Diode
Journal of Alloys and Compounds, 2013Co-Authors: Seong Uk Yang, Seung Ha Choi, Wooshik Jung, Hyunyong Yu, Jinhong ParkAbstract:One of the challenges for the III–V semiconductor-based nanometer-scale device fabrication is to achieve ultra-shallow Junction Diode. In this letter, we demonstrate a Junction depth-controllable ultra-shallow (15 nm) n-IGZO/p-GaAs hetero-Junction Diode at a low temperature (300 C). Through TOF-SIMS, J–V measurement, and HSC chemistry simulation, n-IGZO/p-GaAs Junctions are carefully investigated. Oncurrent density (0.02 A/cm 2
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Depth-controllable ultra shallow Indium Gallium Zinc Oxide/Gallium Arsenide hetero Junction Diode
Journal of Alloys and Compounds, 2013Co-Authors: Seong Uk Yang, Seung Ha Choi, Wooshik Jung, Hyunyong Yu, Jinhong ParkAbstract:One of the challenges for the III–V semiconductor-based nanometer-scale device fabrication is to achieve ultra-shallow Junction Diode. In this letter, we demonstrate a Junction depth-controllable ultra-shallow (15 nm) n-IGZO/p-GaAs hetero-Junction Diode at a low temperature (300 C). Through TOF-SIMS, J–V measurement, and HSC chemistry simulation, n-IGZO/p-GaAs Junctions are carefully investigated. Oncurrent density (0.02 A/cm 2
Kuniharu Takei - One of the best experts on this subject based on the ideXlab platform.
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all solution based heterogeneous material formation for p n Junction Diodes
ACS Applied Materials & Interfaces, 2019Co-Authors: Daisuke Yamamoto, Mao Shiomi, Takayuki Arie, Seiji Akita, Kuniharu TakeiAbstract:All-solution-based devices have potential as the next class of macroscale and multifunctional electronics on versatile amorphous substrates. Different methods and materials have been studied to control the formation of p-type and n-type semiconducting materials because forming active materials for transistors and sensors remains a challenge. This study proposes an approach for solution-based devices in which a p–n Junction Diode is fabricated using a solution-based InZnO thin film for the n-type semiconductor and a carbon nanotube network film for the p-type semiconductor. Additionally, the barrier height (∼160 meV) is extracted and a p–n Junction Diode on a plastic film is demonstrated. Although the performance requires further improvements by modifying the interfaces, this printing method may be an interesting approach for all-printed electronics, which can replace conventional Si electronics.
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All-Solution-Based Heterogeneous Material Formation for p–n Junction Diodes
ACS Applied Materials & Interfaces, 2018Co-Authors: Daisuke Yamamoto, Mao Shiomi, Takayuki Arie, Seiji Akita, Kuniharu TakeiAbstract:All-solution-based devices have potential as the next class of macroscale and multifunctional electronics on versatile amorphous substrates. Different methods and materials have been studied to control the formation of p-type and n-type semiconducting materials because forming active materials for transistors and sensors remains a challenge. This study proposes an approach for solution-based devices in which a p–n Junction Diode is fabricated using a solution-based InZnO thin film for the n-type semiconductor and a carbon nanotube network film for the p-type semiconductor. Additionally, the barrier height (∼160 meV) is extracted and a p–n Junction Diode on a plastic film is demonstrated. Although the performance requires further improvements by modifying the interfaces, this printing method may be an interesting approach for all-printed electronics, which can replace conventional Si electronics.
Seung Ha Choi - One of the best experts on this subject based on the ideXlab platform.
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depth controllable ultra shallow indium gallium zinc oxide gallium arsenide hetero Junction Diode
Journal of Alloys and Compounds, 2013Co-Authors: Seong Uk Yang, Seung Ha Choi, Wooshik Jung, Hyunyong Yu, Jinhong ParkAbstract:One of the challenges for the III–V semiconductor-based nanometer-scale device fabrication is to achieve ultra-shallow Junction Diode. In this letter, we demonstrate a Junction depth-controllable ultra-shallow (15 nm) n-IGZO/p-GaAs hetero-Junction Diode at a low temperature (300 C). Through TOF-SIMS, J–V measurement, and HSC chemistry simulation, n-IGZO/p-GaAs Junctions are carefully investigated. Oncurrent density (0.02 A/cm 2
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Depth-controllable ultra shallow Indium Gallium Zinc Oxide/Gallium Arsenide hetero Junction Diode
Journal of Alloys and Compounds, 2013Co-Authors: Seong Uk Yang, Seung Ha Choi, Wooshik Jung, Hyunyong Yu, Jinhong ParkAbstract:One of the challenges for the III–V semiconductor-based nanometer-scale device fabrication is to achieve ultra-shallow Junction Diode. In this letter, we demonstrate a Junction depth-controllable ultra-shallow (15 nm) n-IGZO/p-GaAs hetero-Junction Diode at a low temperature (300 C). Through TOF-SIMS, J–V measurement, and HSC chemistry simulation, n-IGZO/p-GaAs Junctions are carefully investigated. Oncurrent density (0.02 A/cm 2
Hyunyong Yu - One of the best experts on this subject based on the ideXlab platform.
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depth controllable ultra shallow indium gallium zinc oxide gallium arsenide hetero Junction Diode
Journal of Alloys and Compounds, 2013Co-Authors: Seong Uk Yang, Seung Ha Choi, Wooshik Jung, Hyunyong Yu, Jinhong ParkAbstract:One of the challenges for the III–V semiconductor-based nanometer-scale device fabrication is to achieve ultra-shallow Junction Diode. In this letter, we demonstrate a Junction depth-controllable ultra-shallow (15 nm) n-IGZO/p-GaAs hetero-Junction Diode at a low temperature (300 C). Through TOF-SIMS, J–V measurement, and HSC chemistry simulation, n-IGZO/p-GaAs Junctions are carefully investigated. Oncurrent density (0.02 A/cm 2
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Depth-controllable ultra shallow Indium Gallium Zinc Oxide/Gallium Arsenide hetero Junction Diode
Journal of Alloys and Compounds, 2013Co-Authors: Seong Uk Yang, Seung Ha Choi, Wooshik Jung, Hyunyong Yu, Jinhong ParkAbstract:One of the challenges for the III–V semiconductor-based nanometer-scale device fabrication is to achieve ultra-shallow Junction Diode. In this letter, we demonstrate a Junction depth-controllable ultra-shallow (15 nm) n-IGZO/p-GaAs hetero-Junction Diode at a low temperature (300 C). Through TOF-SIMS, J–V measurement, and HSC chemistry simulation, n-IGZO/p-GaAs Junctions are carefully investigated. Oncurrent density (0.02 A/cm 2