The Experts below are selected from a list of 303 Experts worldwide ranked by ideXlab platform
Shinichi Takagi - One of the best experts on this subject based on the ideXlab platform.
-
Physical understanding of electron mobility in asymmetrically Strained InGaAs-on-insulator metal-oxide-semiconductor field-effect transistors fabricated by Lateral Strain relaxation
Applied Physics Letters, 2014Co-Authors: Sanghyeon Kim, Masafumi Yokoyama, Yuki Ikku, Ryosho Nakane, Osamu Ichikawa, Takenori Osada, Masahiko Hata, Mitsuru Takenaka, Shinichi TakagiAbstract:In this paper, we fabricated asymmetrically tensile-Strained In0.53Ga0.47As-on-insulator (-OI) metal-oxide-semiconductor field-effect transistors (MOSFETs) using a Lateral Strain relaxation technique. A stripe-like line structure, fabricated in biaxially Strained In0.53Ga0.47As-OI can lead to the Lateral Strain relaxation and asymmetric Strain configuration in In0.53Ga0.47As-OI with the channel width of 100 nm. We have found that the effective mobility (μeff) enhancement in In0.53Ga0.47As-OI MOSFETs with uniaxial-like asymmetric Strain becomes smaller than that in In0.53Ga0.47As-OI MOSFETs with biaxial Strain. We have clarified from a systematic analysis between the Strain values and the μeff characteristics that this mobility behavior can be understood by the change of the energy level of the conduction band minimum due to the Lateral Strain relaxation.
-
ESSDERC - Physical understanding of electron mobility in uniaxially Strained InGaAs-OI MOSFETs
2013 Proceedings of the European Solid-State Device Research Conference (ESSDERC), 2013Co-Authors: Sanghyeon Kim, Masafumi Yokoyama, Yuki Ikku, Ryosho Nakane, Osamu Ichikawa, Takenori Osada, Masahiko Hata, Mitsuru Takenaka, Shinichi TakagiAbstract:In this paper, we have fabricated uniaxially tensile Strained In 0.33 Ga 0.47 As-OI MOSFETs, for the first time, using a Lateral Strain relaxation technique. A stripe-like line structure was fabricated from biaxially-Strained In 0.53 Ga 0.47 As-OI. This structure exhibits the Lateral Strain relaxation. We have found that μeff in Strained In 0.53 Ga 0.47 As-OI MOSFETs decreases with a decrease in the gate width (W G ) as the mesa width. This mobility behavior can be understood by conduction band minimum (CBM) change due to the Lateral Strain relaxation.
-
high performance uniaxially Strained sige on insulator pmosfets fabricated by Lateral Strain relaxation technique
IEEE Transactions on Electron Devices, 2006Co-Authors: Toshifumi Irisawa, Tsutomu Tezuka, Koji Usuda, Norio Hirashita, Naoharu Sugiyama, Eiji Toyoda, T Numata, Shinichi TakagiAbstract:Novel uniaxially Strained SiGe-on-insulator (SGOI) pMOSFETs with Ge content of 20% have been successfully fabricated by utilizing Lateral (uniaxial) Strain-relaxation process on globally (biaxially) Strained SGOI substrates. Drastic increase of drain current (80%) caused by the change of Strain from biaxial to uniaxial and the mobility enhancement of about 100% against the control Si-on-insulator pMOSFETs are observed in SGOI pMOSFET. This high mobility enhancement is maintained in high vertical effective fields as well as in short-channel devices. As a result, significant ION enhancement of 80% is demonstrated in 40-nm gate-length uniaxially Strained SGOI pMOSFET
-
High current drive uniaxially-Strained SGOI pMOSFETs fabricated by Lateral Strain relaxation technique
Digest of Technical Papers. 2005 Symposium on VLSI Technology 2005., 1Co-Authors: Toshifumi Irisawa, T. Nuipata, Tsutomu Tezuka, Koji Usuda, Norio Hirashita, Naoharu Sugiyama, Eiji Toyoda, Shinichi TakagiAbstract:Novel uniaxially-Strained SiGe-on-insulator (SGOI) pMOSFETs are successfully fabricated by utilizing Lateral Strain relaxation process and the mobility enhancement of 100% is realized in spite of low Ge content (20%). This high mobility enhancement is maintained in high vertical effective fields as well as in short channel devices. As a result, I/sub on/ enhancement of 80% is demonstrated in 40 nm gate length uniaxially-Strained SGOI pMOSFETs.
Chris Huw John Davies - One of the best experts on this subject based on the ideXlab platform.
-
Negative Lateral Strain ratio induced by deformation twinning in magnesium alloy AZ31
Materials Science and Engineering: A, 2011Co-Authors: Young Bum Chun, Chris Huw John DaviesAbstract:Abstract We show that any highly textured metal that deforms predominantly by deformation twinning can exhibit a negative Lateral Strain ratio under uni-axial loading. Theoretical calculations of Lateral Strains caused by tension twinning on the { 1 0 1 ¯ 2 } plane in a magnesium single crystal predicts this behavior, and we verify this by direct measurements of Lateral Strains in highly textured commercial magnesium alloy AZ31 deformed in uniaxial compression. The R values of AZ31 plate compressed in the rolling direction at −100 °C and 25 °C show negative values at compressive Strain up to ∼0.03, and increase with Strain and temperature. These evolution trends of R value are found be closely related to activity of { 1 0 1 ¯ 2 } twinning. This approach is extended to compression twinning in zinc, for which theoretical calculations show the same effect on Lateral Strain ratio.
-
Twinning-induced anomaly in the yield surface of highly textured Mg–3Al–1Zn plate
Scripta Materialia, 2011Co-Authors: Young Bum Chun, Chris Huw John DaviesAbstract:The evolution of stress and Lateral Strains with applied Strain was determined by uniaxial loading in the principal directions of a highly textured Mg–3Al–1Zn plate. The material exhibits negative Lateral Strain ratios when twinning dominates deformation. This leads to a yield surface with a distinct shape, with a high curvature under a balanced biaxial stress state and a shift in plane-Strain compression conditions from the third to the second and fourth quadrants of the yield surface.
Young Bum Chun - One of the best experts on this subject based on the ideXlab platform.
-
Negative Lateral Strain ratio induced by deformation twinning in magnesium alloy AZ31
Materials Science and Engineering: A, 2011Co-Authors: Young Bum Chun, Chris Huw John DaviesAbstract:Abstract We show that any highly textured metal that deforms predominantly by deformation twinning can exhibit a negative Lateral Strain ratio under uni-axial loading. Theoretical calculations of Lateral Strains caused by tension twinning on the { 1 0 1 ¯ 2 } plane in a magnesium single crystal predicts this behavior, and we verify this by direct measurements of Lateral Strains in highly textured commercial magnesium alloy AZ31 deformed in uniaxial compression. The R values of AZ31 plate compressed in the rolling direction at −100 °C and 25 °C show negative values at compressive Strain up to ∼0.03, and increase with Strain and temperature. These evolution trends of R value are found be closely related to activity of { 1 0 1 ¯ 2 } twinning. This approach is extended to compression twinning in zinc, for which theoretical calculations show the same effect on Lateral Strain ratio.
-
Twinning-induced anomaly in the yield surface of highly textured Mg–3Al–1Zn plate
Scripta Materialia, 2011Co-Authors: Young Bum Chun, Chris Huw John DaviesAbstract:The evolution of stress and Lateral Strains with applied Strain was determined by uniaxial loading in the principal directions of a highly textured Mg–3Al–1Zn plate. The material exhibits negative Lateral Strain ratios when twinning dominates deformation. This leads to a yield surface with a distinct shape, with a high curvature under a balanced biaxial stress state and a shift in plane-Strain compression conditions from the third to the second and fourth quadrants of the yield surface.
Toshifumi Irisawa - One of the best experts on this subject based on the ideXlab platform.
-
high performance uniaxially Strained sige on insulator pmosfets fabricated by Lateral Strain relaxation technique
IEEE Transactions on Electron Devices, 2006Co-Authors: Toshifumi Irisawa, Tsutomu Tezuka, Koji Usuda, Norio Hirashita, Naoharu Sugiyama, Eiji Toyoda, T Numata, Shinichi TakagiAbstract:Novel uniaxially Strained SiGe-on-insulator (SGOI) pMOSFETs with Ge content of 20% have been successfully fabricated by utilizing Lateral (uniaxial) Strain-relaxation process on globally (biaxially) Strained SGOI substrates. Drastic increase of drain current (80%) caused by the change of Strain from biaxial to uniaxial and the mobility enhancement of about 100% against the control Si-on-insulator pMOSFETs are observed in SGOI pMOSFET. This high mobility enhancement is maintained in high vertical effective fields as well as in short-channel devices. As a result, significant ION enhancement of 80% is demonstrated in 40-nm gate-length uniaxially Strained SGOI pMOSFET
-
High current drive uniaxially-Strained SGOI pMOSFETs fabricated by Lateral Strain relaxation technique
Digest of Technical Papers. 2005 Symposium on VLSI Technology 2005., 1Co-Authors: Toshifumi Irisawa, T. Nuipata, Tsutomu Tezuka, Koji Usuda, Norio Hirashita, Naoharu Sugiyama, Eiji Toyoda, Shinichi TakagiAbstract:Novel uniaxially-Strained SiGe-on-insulator (SGOI) pMOSFETs are successfully fabricated by utilizing Lateral Strain relaxation process and the mobility enhancement of 100% is realized in spite of low Ge content (20%). This high mobility enhancement is maintained in high vertical effective fields as well as in short channel devices. As a result, I/sub on/ enhancement of 80% is demonstrated in 40 nm gate length uniaxially-Strained SGOI pMOSFETs.
Luca Tassi - One of the best experts on this subject based on the ideXlab platform.
-
Trench curvature and deformation of the subducting lithosphere
Geophysical Journal International, 2011Co-Authors: Antonio Schettino, Luca TassiAbstract:SUMMARY The subduction of oceanic lithosphere is generally accompanied by downdip and Lateral deformation. The downdip component of Strain is associated with external forces that are applied to the slab during its sinking, namely the gravitational force and the mantle resistance to penetration. Here, we present theoretical arguments showing that a tectonic plate is also subject to a predictable amount of Lateral deformation as a consequence of its bending along an arcuate trench zone, independently from the long-term physical processes that have determined the actual curvature of the subduction zone. In particular, we show that the state of Lateral Strain and the Lateral Strain rate of a subducting slab depend from geometric and kinematic parameters, such as trench curvature, dip function and subduction velocity. We also demonstrate that the relationship between the state of Lateral Strain in a subducting slab and the geometry of bending at the corresponding active margin implies a small component of Lateral shortening at shallow depths, and may include large extensional Lateral deformation at intermediate depths, whereas a state of Lateral mechanical equilibrium can only represent a localized exception. Our formulation overcomes the flaws of the classic ‘ping-pong ball’ model for the bending of the lithosphere at subduction zones, which lead to severe discrepancies with the observed geometry and style of deformation of the modern subducting slabs. A study of the geometry and seismicity of eight modern subduction zones is performed, to assess the validity of the theoretical relationship between trench curvature, slab dip function, and Lateral Strain rate. The Strain pattern within the eight present-day slabs, which is reconstructed through an analysis of Harvard CMT solutions, shows that tectonic plates cannot be considered as flexible-inextensible spherical caps, whereas the Lateral intraslab deformation which is accommodated through seismic slip can be explained in terms of deviations from the mechanical equilibrium.
