The Experts below are selected from a list of 315 Experts worldwide ranked by ideXlab platform
Shuai-quan Yang - One of the best experts on this subject based on the ideXlab platform.
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Dresselhaus spin-orbit coupling induced electron-spin polarization in a 3-Layered Semiconductor heterostructure
Journal of Magnetism and Magnetic Materials, 2020Co-Authors: Zeng-lin Cao, Xin-hong Huang, Qing-meng Guo, Shuai-quan YangAbstract:Abstract Considering Dresselhaus-type spin–orbit coupling (SOC), we theoretically investigate spin-polarized transport in a 3-Layered Semiconductor heterostructure, InSb/InxGa1-xAs/GaSb. Adopting improved transfer matrix method to solve Schrodinger equation, electronic transmission coefficient is obtained exactly, and then spin polarization ratio is evaluated. An appreciable electron-spin polarization effect by the Dresselhaus-SOC appears in this Layered Semiconductor heterostructure. Spin polarization is associated closely with in-plane wave vector, incident direction and SOC strength. In particular, both magnitude and sign of spin polarization are manipulated by strain engineering or an appropriate intermediate-layer. Therefore, such a 3-Layered Semiconductor heterostructure can serve as a controllable spin filter for spintronics device applications.
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Rashba spin-orbit coupling induced electron-spin polarization in a realistic 3-Layered Semiconductor heterostructure
Superlattices and Microstructures, 2020Co-Authors: Zeng-lin Cao, Xin-hong Huang, Qing-meng Guo, Shuai-quan YangAbstract:Abstract In Layered Semiconductor heterostructure, there exists spin-orbit coupling (SOC), which can induce electron-spin polarization. Considering a realistic 3-Layered Semiconductor heterostructure, InSb/InxGa1-xAs/GaSb, we present a theoretical study of spin polarized transport by the Rashba-SOC type. An obvious electron-spin polarization effect is found in such a 3-Layered system, and its degree is related to in-plane wave vector, Rashba-SOC strength and intermediate-layer parameters. Both magnitude and sign of spin polarization can be manipulated by tuning interfacial confining electric field or fabricating intermediate layer properly. These interesting features may be useful for exploring new way of spin injection and designing controllable spin filter for spintronics applications.
Zeng-lin Cao - One of the best experts on this subject based on the ideXlab platform.
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Dresselhaus spin-orbit coupling induced electron-spin polarization in a 3-Layered Semiconductor heterostructure
Journal of Magnetism and Magnetic Materials, 2020Co-Authors: Zeng-lin Cao, Xin-hong Huang, Qing-meng Guo, Shuai-quan YangAbstract:Abstract Considering Dresselhaus-type spin–orbit coupling (SOC), we theoretically investigate spin-polarized transport in a 3-Layered Semiconductor heterostructure, InSb/InxGa1-xAs/GaSb. Adopting improved transfer matrix method to solve Schrodinger equation, electronic transmission coefficient is obtained exactly, and then spin polarization ratio is evaluated. An appreciable electron-spin polarization effect by the Dresselhaus-SOC appears in this Layered Semiconductor heterostructure. Spin polarization is associated closely with in-plane wave vector, incident direction and SOC strength. In particular, both magnitude and sign of spin polarization are manipulated by strain engineering or an appropriate intermediate-layer. Therefore, such a 3-Layered Semiconductor heterostructure can serve as a controllable spin filter for spintronics device applications.
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Rashba spin-orbit coupling induced electron-spin polarization in a realistic 3-Layered Semiconductor heterostructure
Superlattices and Microstructures, 2020Co-Authors: Zeng-lin Cao, Xin-hong Huang, Qing-meng Guo, Shuai-quan YangAbstract:Abstract In Layered Semiconductor heterostructure, there exists spin-orbit coupling (SOC), which can induce electron-spin polarization. Considering a realistic 3-Layered Semiconductor heterostructure, InSb/InxGa1-xAs/GaSb, we present a theoretical study of spin polarized transport by the Rashba-SOC type. An obvious electron-spin polarization effect is found in such a 3-Layered system, and its degree is related to in-plane wave vector, Rashba-SOC strength and intermediate-layer parameters. Both magnitude and sign of spin polarization can be manipulated by tuning interfacial confining electric field or fabricating intermediate layer properly. These interesting features may be useful for exploring new way of spin injection and designing controllable spin filter for spintronics applications.
Xin-hong Huang - One of the best experts on this subject based on the ideXlab platform.
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Dresselhaus spin-orbit coupling induced electron-spin polarization in a 3-Layered Semiconductor heterostructure
Journal of Magnetism and Magnetic Materials, 2020Co-Authors: Zeng-lin Cao, Xin-hong Huang, Qing-meng Guo, Shuai-quan YangAbstract:Abstract Considering Dresselhaus-type spin–orbit coupling (SOC), we theoretically investigate spin-polarized transport in a 3-Layered Semiconductor heterostructure, InSb/InxGa1-xAs/GaSb. Adopting improved transfer matrix method to solve Schrodinger equation, electronic transmission coefficient is obtained exactly, and then spin polarization ratio is evaluated. An appreciable electron-spin polarization effect by the Dresselhaus-SOC appears in this Layered Semiconductor heterostructure. Spin polarization is associated closely with in-plane wave vector, incident direction and SOC strength. In particular, both magnitude and sign of spin polarization are manipulated by strain engineering or an appropriate intermediate-layer. Therefore, such a 3-Layered Semiconductor heterostructure can serve as a controllable spin filter for spintronics device applications.
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Rashba spin-orbit coupling induced electron-spin polarization in a realistic 3-Layered Semiconductor heterostructure
Superlattices and Microstructures, 2020Co-Authors: Zeng-lin Cao, Xin-hong Huang, Qing-meng Guo, Shuai-quan YangAbstract:Abstract In Layered Semiconductor heterostructure, there exists spin-orbit coupling (SOC), which can induce electron-spin polarization. Considering a realistic 3-Layered Semiconductor heterostructure, InSb/InxGa1-xAs/GaSb, we present a theoretical study of spin polarized transport by the Rashba-SOC type. An obvious electron-spin polarization effect is found in such a 3-Layered system, and its degree is related to in-plane wave vector, Rashba-SOC strength and intermediate-layer parameters. Both magnitude and sign of spin polarization can be manipulated by tuning interfacial confining electric field or fabricating intermediate layer properly. These interesting features may be useful for exploring new way of spin injection and designing controllable spin filter for spintronics applications.
Qing-meng Guo - One of the best experts on this subject based on the ideXlab platform.
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Dresselhaus spin-orbit coupling induced electron-spin polarization in a 3-Layered Semiconductor heterostructure
Journal of Magnetism and Magnetic Materials, 2020Co-Authors: Zeng-lin Cao, Xin-hong Huang, Qing-meng Guo, Shuai-quan YangAbstract:Abstract Considering Dresselhaus-type spin–orbit coupling (SOC), we theoretically investigate spin-polarized transport in a 3-Layered Semiconductor heterostructure, InSb/InxGa1-xAs/GaSb. Adopting improved transfer matrix method to solve Schrodinger equation, electronic transmission coefficient is obtained exactly, and then spin polarization ratio is evaluated. An appreciable electron-spin polarization effect by the Dresselhaus-SOC appears in this Layered Semiconductor heterostructure. Spin polarization is associated closely with in-plane wave vector, incident direction and SOC strength. In particular, both magnitude and sign of spin polarization are manipulated by strain engineering or an appropriate intermediate-layer. Therefore, such a 3-Layered Semiconductor heterostructure can serve as a controllable spin filter for spintronics device applications.
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Rashba spin-orbit coupling induced electron-spin polarization in a realistic 3-Layered Semiconductor heterostructure
Superlattices and Microstructures, 2020Co-Authors: Zeng-lin Cao, Xin-hong Huang, Qing-meng Guo, Shuai-quan YangAbstract:Abstract In Layered Semiconductor heterostructure, there exists spin-orbit coupling (SOC), which can induce electron-spin polarization. Considering a realistic 3-Layered Semiconductor heterostructure, InSb/InxGa1-xAs/GaSb, we present a theoretical study of spin polarized transport by the Rashba-SOC type. An obvious electron-spin polarization effect is found in such a 3-Layered system, and its degree is related to in-plane wave vector, Rashba-SOC strength and intermediate-layer parameters. Both magnitude and sign of spin polarization can be manipulated by tuning interfacial confining electric field or fabricating intermediate layer properly. These interesting features may be useful for exploring new way of spin injection and designing controllable spin filter for spintronics applications.
I V Grekhov - One of the best experts on this subject based on the ideXlab platform.
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superfast fronts of impact ionization in initially unbiased Layered Semiconductor structures
Journal of Applied Physics, 2002Co-Authors: Pavel Rodin, Ute Ebert, Willem Hundsdorfer, I V GrekhovAbstract:A mode of impact ionization breakdown of a p–n junction is suggested: We demonstrate that when a sufficiently sharp voltage ramp is applied in reverse direction to an initially unbiased equilibrium p+–n–n+ structure, after some delay the system will reach a high conductivity state via the propagation of a superfast impact ionization front. The front travels towards the anode with a velocity vf several times larger than the saturated drift velocity of electrons vs leaving a dense electron–hole plasma behind. The excitation of the superfast front corresponds to the transition from the common avalanche breakdown of a Semiconductor structure to a collective mode of streamer-like breakdown. We propose that similar fronts can be excited not in Layered structures but in plain bulk samples without p–n junctions. Our numerical simulations apply to a Si structure with typical thickness of W∼100 μm switched in series with a load R∼100 Ω, with a voltage ramp of A>1012 V/s applied to the whole system. Our simulations ...
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superfast fronts of impact ionization in initially unbiased Layered Semiconductor structures
Report Modelling Analysis and Simulation, 2001Co-Authors: Pavel Rodin, Ute Ebert, Willem Hundsdorfer, I V GrekhovAbstract:We present results of numerical simulations of superfast impact ionization fronts in initially unbiased Layered Semiconductor structures.We demonstrate that when a sufficiently sharp voltage ramp $A > 10^{12} ; { m V/s}$ is applied in the reverse directionto an initially unbiased Si $p^{+}-n-n^{+}$-structure connected in series with a load $R$, then after some delay the system will reach the high conductivity state via the propagation of a superfast impact ionization frontwhich leaves a dense electron-hole plasma behind.The front travels towards the anode with a velocity $v_f$ several times largerthan the saturated drift velocity of electrons $v_s$.The excitation of the superfast front corresponds to the transitionfrom the common avalanche breakdown of a Semiconductor structure toa collective mode of streamer-like breakdown.For a structure with typical thickness of$W sim 100 ; { m mu m}$, first there is a delay of about$1 ; { m ns}$ during which the voltage reaches a value ofseveral kilovolts. Then, as the front is triggered, the voltageabruptly breaks down to several hundreds of voltswithin $sim 100 ; { m ps}$. This provides a voltage rampof up to $sim 2 cdot 10^{13}; { m V/s}$, hence up to 10times sharper than the externally applied ramp.We unravel the source of initial carriers which trigger the frontand explain the origin of the time delay in triggering the front.Further we identify the mechanism of front propagation and discussthe possibility to excite superfast ionizationfronts not in Layered structures but in bulk Semiconductors.