The Experts below are selected from a list of 321 Experts worldwide ranked by ideXlab platform
B. Davari - One of the best experts on this subject based on the ideXlab platform.
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Transient pass-transistor Leakage Current in SOI MOSFET's
IEEE Electron Device Letters, 1997Co-Authors: F. Assaderaghi, G.g. Shahidi, L. Wagner, M. Hsieh, M. Pelella, R.h. Dennard, B. DavariAbstract:This paper reports an accurate method of measuring the anomalous Leakage Current in pass-gate MOSFET's unique to SOI devices. A high-speed measurement setup is used to provide experimental results, and to quantify the magnitude of Leakage. Particularly, great care is taken to measure only the device Leakage Current and not the Currents due to parasitic capacitances. Systematic influences of different factors such as temperature, bias, device history, and device structure on this Leakage Current are experimentally established,.
Saad Mekhilef - One of the best experts on this subject based on the ideXlab platform.
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A reduced Leakage Current transformerless photovoltaic inverter
Renewable Energy, 2016Co-Authors: Kok Soon Tey, Saad MekhilefAbstract:The transformerless inverters used in the grid connected photovoltaic (PV) system induce Leakage Current due to the absence of galvanic isolation and unstable common mode voltage. Even though, the Leakage Current is able to be reduced by using the H5 topology, it is still considered high due to the existence of junction capacitance in the switches during the freewheeling mode. In this paper, a six switches and two diodes single phase transformerless PV inverter with stable common mode voltage and reduced Leakage Current is proposed. The simulation of the proposed topology is carried out in MATLAB and validated experimentally. The results show that the proposed topology has lower Leakage Current as compared to the H5 topology.
F. Assaderaghi - One of the best experts on this subject based on the ideXlab platform.
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Transient pass-transistor Leakage Current in SOI MOSFET's
IEEE Electron Device Letters, 1997Co-Authors: F. Assaderaghi, G.g. Shahidi, L. Wagner, M. Hsieh, M. Pelella, R.h. Dennard, B. DavariAbstract:This paper reports an accurate method of measuring the anomalous Leakage Current in pass-gate MOSFET's unique to SOI devices. A high-speed measurement setup is used to provide experimental results, and to quantify the magnitude of Leakage. Particularly, great care is taken to measure only the device Leakage Current and not the Currents due to parasitic capacitances. Systematic influences of different factors such as temperature, bias, device history, and device structure on this Leakage Current are experimentally established,.
Fangdong Yang - One of the best experts on this subject based on the ideXlab platform.
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Leakage Current Analysis for Epitaxial Silicon Pulse Radiation Detector
2019 International Conference on IC Design and Technology (ICICDT), 2019Co-Authors: Min Yu, Xinyang Zhao, Jingxi Wang, Fangdong YangAbstract:The Leakage Current of radiation detectors is a vital parameter. The Leakage Current analysis for pulse radiation detector on epitaxial silicon is performed by using the gate-controlled diodes. As comparison, similar analysis on 300μm thick silicon wafer is carried out as well. Comparable level of surface states Leakage Currents are achieved. It is found that the minority carrier lifetime decreases with main junction reverse bias voltage for epitaxial silicon, however, it increases for 300μm thick silicon wafer. The underlying physical reason is analyzed in this work, improving the understanding of Leakage Current mechanism for pulse radiation detectors. Radiation response detectors were fabricated on epitaxial silicon wafers. Low Leakage Current radiation response detector is achieved and rising time of detected pulse is measured to be 3.5ns by using pulse laser for detection test.
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ICICDT - Leakage Current Analysis for Epitaxial Silicon Pulse Radiation Detector
2019 International Conference on IC Design and Technology (ICICDT), 2019Co-Authors: Min Yu, Xinyang Zhao, Jingxi Wang, Fangdong YangAbstract:The Leakage Current of radiation detectors is a vital parameter. The Leakage Current analysis for pulse radiation detector on epitaxial silicon is performed by using the gate-controlled diodes. As comparison, similar analysis on 300μm thick silicon wafer is carried out as well. Comparable level of surface states Leakage Currents are achieved. It is found that the minority carrier lifetime decreases with main junction reverse bias voltage for epitaxial silicon, however, it increases for 300μm thick silicon wafer. The underlying physical reason is analyzed in this work, improving the understanding of Leakage Current mechanism for pulse radiation detectors. Radiation response detectors were fabricated on epitaxial silicon wafers. Low Leakage Current radiation response detector is achieved and rising time of detected pulse is measured to be 3.5ns by using pulse laser for detection test.
Kok Soon Tey - One of the best experts on this subject based on the ideXlab platform.
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A reduced Leakage Current transformerless photovoltaic inverter
Renewable Energy, 2016Co-Authors: Kok Soon Tey, Saad MekhilefAbstract:The transformerless inverters used in the grid connected photovoltaic (PV) system induce Leakage Current due to the absence of galvanic isolation and unstable common mode voltage. Even though, the Leakage Current is able to be reduced by using the H5 topology, it is still considered high due to the existence of junction capacitance in the switches during the freewheeling mode. In this paper, a six switches and two diodes single phase transformerless PV inverter with stable common mode voltage and reduced Leakage Current is proposed. The simulation of the proposed topology is carried out in MATLAB and validated experimentally. The results show that the proposed topology has lower Leakage Current as compared to the H5 topology.