The Experts below are selected from a list of 324 Experts worldwide ranked by ideXlab platform
L Selmi - One of the best experts on this subject based on the ideXlab platform.
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a new formulation for surface roughness Limited Mobility in bulk and ultra thin body metal oxide semiconductor transistors
Journal of Applied Physics, 2014Co-Authors: D Lizzit, D Esseni, P Palestri, L SelmiAbstract:This paper presents a new model for the surface roughness (SR) Limited Mobility in MOS transistors. The model is suitable for bulk and thin body devices and explicitly takes into account the non linear relation between the displacement Δ of the interface position and the SR scattering matrix elements, which is found to significantly influence the r.m.s value (Δrms) of the interface roughness that is necessary to reproduce SR-Limited Mobility measurements. In particular, comparison with experimental Mobility for bulk Si MOSFETs shows that with the new SR scattering model a good agreement with measured Mobility can be obtained with Δrms values of about 0.2 nm, which is in good agreement with several AFM and TEM measurements. For thin body III–V MOSFETs, the proposed model predicts a weaker Mobility degradation at small well thicknesses (Tw), compared to the Tw6 behavior observed in Si extremely thin body devices.
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A new formulation for surface roughness Limited Mobility in bulk and ultra-thin-body metal–oxide–semiconductor transistors
Journal of Applied Physics, 2014Co-Authors: D Lizzit, David Esseni, P Palestri, L SelmiAbstract:This paper presents a new model for the surface roughness (SR) Limited Mobility in MOS transistors. The model is suitable for bulk and thin body devices and explicitly takes into account the non linear relation between the displacement Δ of the interface position and the SR scattering matrix elements, which is found to significantly influence the r.m.s value (Δrms) of the interface roughness that is necessary to reproduce SR-Limited Mobility measurements. In particular, comparison with experimental Mobility for bulk Si MOSFETs shows that with the new SR scattering model a good agreement with measured Mobility can be obtained with Δrms values of about 0.2 nm, which is in good agreement with several AFM and TEM measurements. For thin body III–V MOSFETs, the proposed model predicts a weaker Mobility degradation at small well thicknesses (Tw), compared to the Tw6 behavior observed in Si extremely thin body devices.
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Surface roughness Limited Mobility modeling in ultra-thin SOI and quantum well III-V MOSFETs
2013 IEEE International Electron Devices Meeting, 2013Co-Authors: D Lizzit, David Esseni, P Palestri, L SelmiAbstract:This paper presents a new model for the surface roughness (SR) Limited Mobility (μSR). The model is suitable for bulk, for ultra thin body (UTB) and for Hetero-Structure Quantum Well (HS-QW) MOSFETs. Comparison with experimental Mobility for Si bulk MOSFETs shows that a good agreement with measured Mobility can be obtained with a r.m.s. value of the SR spectrum close to several AFM and TEM measurements. For III-V MOSFETs with small well thickness the proposed model shows a weaker Mobility degradation with respect to the Tw6 behavior.
Pin Su - One of the best experts on this subject based on the ideXlab platform.
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Experimental Investigation of Surface-Roughness-Limited Mobility in Uniaxial Strained pMOSFETs
IEEE Electron Device Letters, 2011Co-Authors: William P. N. Chen, Pin SuAbstract:This letter provides an experimental assessment of surface-roughness-scattering-Limited Mobility (μSR) under process-induced uniaxial strain and compares the strain sensitivity between μSR and phonon-scattering-Limited Mobility (μPH). By an accurate split C-V Mobility extraction method, the μSR of short-channel pMOSFETs was extracted at an ultralow temperature to suppress the phonon scattering mechanism. Our result indicates that μSR has stronger stress sensitivity than μPH. Furthermore, the surface roughness Mobility enhancement tends to increase as the vertical electric field increases. Our experimental findings confirm the previously reported results based on simulations.
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Enhanced Temperature Dependence of Phonon-Scattering-Limited Mobility in Compressively Uniaxial Strained pMOSFETs
IEEE Transactions on Electron Devices, 2011Co-Authors: William Po-nien Chen, Pin SuAbstract:This paper investigates the temperature dependence of phonon-scattering-Limited Mobility μPH for advanced short-channel strained pMOS devices. By using the split CV method and Matthiessen's rule, surface-roughness-Limited Mobility μSR and μPH are successfully decoupled. This paper indicates that the temperature sensitivity of μPH is proportional to T-1.75 for a neutral stressor and becomes higher when compressive strain is applied. It is explained by the higher optical phonon energy induced by uniaxially compressive strain. Our new findings may also explain the previously reported higher temperature sensitivity of drain current present in uniaxial strained pMOSFETs.
D Lizzit - One of the best experts on this subject based on the ideXlab platform.
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a new formulation for surface roughness Limited Mobility in bulk and ultra thin body metal oxide semiconductor transistors
Journal of Applied Physics, 2014Co-Authors: D Lizzit, D Esseni, P Palestri, L SelmiAbstract:This paper presents a new model for the surface roughness (SR) Limited Mobility in MOS transistors. The model is suitable for bulk and thin body devices and explicitly takes into account the non linear relation between the displacement Δ of the interface position and the SR scattering matrix elements, which is found to significantly influence the r.m.s value (Δrms) of the interface roughness that is necessary to reproduce SR-Limited Mobility measurements. In particular, comparison with experimental Mobility for bulk Si MOSFETs shows that with the new SR scattering model a good agreement with measured Mobility can be obtained with Δrms values of about 0.2 nm, which is in good agreement with several AFM and TEM measurements. For thin body III–V MOSFETs, the proposed model predicts a weaker Mobility degradation at small well thicknesses (Tw), compared to the Tw6 behavior observed in Si extremely thin body devices.
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A new formulation for surface roughness Limited Mobility in bulk and ultra-thin-body metal–oxide–semiconductor transistors
Journal of Applied Physics, 2014Co-Authors: D Lizzit, David Esseni, P Palestri, L SelmiAbstract:This paper presents a new model for the surface roughness (SR) Limited Mobility in MOS transistors. The model is suitable for bulk and thin body devices and explicitly takes into account the non linear relation between the displacement Δ of the interface position and the SR scattering matrix elements, which is found to significantly influence the r.m.s value (Δrms) of the interface roughness that is necessary to reproduce SR-Limited Mobility measurements. In particular, comparison with experimental Mobility for bulk Si MOSFETs shows that with the new SR scattering model a good agreement with measured Mobility can be obtained with Δrms values of about 0.2 nm, which is in good agreement with several AFM and TEM measurements. For thin body III–V MOSFETs, the proposed model predicts a weaker Mobility degradation at small well thicknesses (Tw), compared to the Tw6 behavior observed in Si extremely thin body devices.
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Surface roughness Limited Mobility modeling in ultra-thin SOI and quantum well III-V MOSFETs
2013 IEEE International Electron Devices Meeting, 2013Co-Authors: D Lizzit, David Esseni, P Palestri, L SelmiAbstract:This paper presents a new model for the surface roughness (SR) Limited Mobility (μSR). The model is suitable for bulk, for ultra thin body (UTB) and for Hetero-Structure Quantum Well (HS-QW) MOSFETs. Comparison with experimental Mobility for Si bulk MOSFETs shows that a good agreement with measured Mobility can be obtained with a r.m.s. value of the SR spectrum close to several AFM and TEM measurements. For III-V MOSFETs with small well thickness the proposed model shows a weaker Mobility degradation with respect to the Tw6 behavior.
P Palestri - One of the best experts on this subject based on the ideXlab platform.
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a new formulation for surface roughness Limited Mobility in bulk and ultra thin body metal oxide semiconductor transistors
Journal of Applied Physics, 2014Co-Authors: D Lizzit, D Esseni, P Palestri, L SelmiAbstract:This paper presents a new model for the surface roughness (SR) Limited Mobility in MOS transistors. The model is suitable for bulk and thin body devices and explicitly takes into account the non linear relation between the displacement Δ of the interface position and the SR scattering matrix elements, which is found to significantly influence the r.m.s value (Δrms) of the interface roughness that is necessary to reproduce SR-Limited Mobility measurements. In particular, comparison with experimental Mobility for bulk Si MOSFETs shows that with the new SR scattering model a good agreement with measured Mobility can be obtained with Δrms values of about 0.2 nm, which is in good agreement with several AFM and TEM measurements. For thin body III–V MOSFETs, the proposed model predicts a weaker Mobility degradation at small well thicknesses (Tw), compared to the Tw6 behavior observed in Si extremely thin body devices.
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A new formulation for surface roughness Limited Mobility in bulk and ultra-thin-body metal–oxide–semiconductor transistors
Journal of Applied Physics, 2014Co-Authors: D Lizzit, David Esseni, P Palestri, L SelmiAbstract:This paper presents a new model for the surface roughness (SR) Limited Mobility in MOS transistors. The model is suitable for bulk and thin body devices and explicitly takes into account the non linear relation between the displacement Δ of the interface position and the SR scattering matrix elements, which is found to significantly influence the r.m.s value (Δrms) of the interface roughness that is necessary to reproduce SR-Limited Mobility measurements. In particular, comparison with experimental Mobility for bulk Si MOSFETs shows that with the new SR scattering model a good agreement with measured Mobility can be obtained with Δrms values of about 0.2 nm, which is in good agreement with several AFM and TEM measurements. For thin body III–V MOSFETs, the proposed model predicts a weaker Mobility degradation at small well thicknesses (Tw), compared to the Tw6 behavior observed in Si extremely thin body devices.
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Surface roughness Limited Mobility modeling in ultra-thin SOI and quantum well III-V MOSFETs
2013 IEEE International Electron Devices Meeting, 2013Co-Authors: D Lizzit, David Esseni, P Palestri, L SelmiAbstract:This paper presents a new model for the surface roughness (SR) Limited Mobility (μSR). The model is suitable for bulk, for ultra thin body (UTB) and for Hetero-Structure Quantum Well (HS-QW) MOSFETs. Comparison with experimental Mobility for Si bulk MOSFETs shows that a good agreement with measured Mobility can be obtained with a r.m.s. value of the SR spectrum close to several AFM and TEM measurements. For III-V MOSFETs with small well thickness the proposed model shows a weaker Mobility degradation with respect to the Tw6 behavior.
A. Pirovano - One of the best experts on this subject based on the ideXlab platform.
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On surface roughness-Limited Mobility in highly doped n-MOSFET's
IEEE Transactions on Electron Devices, 1999Co-Authors: G. Mazzoni, A.l. Lacaita, L.m. Perron, A. PirovanoAbstract:Based on a numerical study of Ando's model for surface roughness scattering, we assess the links between the functional dependencies of the electron surface roughness-Limited Mobility and the morphology of the interface. The results are summarized in an analytical expression that can be implemented into device simulators. Our results also highlight that as the channel doping increases, the surface roughness-Limited Mobility features a roll-off in the low effective field region, similar to the one due to the Coulomb-Limited Mobility. This physical effect is discussed.