The Experts below are selected from a list of 14409 Experts worldwide ranked by ideXlab platform
Wang Kaiyou - One of the best experts on this subject based on the ideXlab platform.
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Complementary Lateral-Spin-Orbit Building Blocks for Programmable Logic and In-Memory Computing
'Wiley', 2020Co-Authors: Rushforth Andrew, Zhang Nan, Yi Cao, Li Yucai, Ji Yang, Zheng Houzhi, Wang KaiyouAbstract:Current-driven switching of nonvolatile spintronic Materials and devices based on spin-orbit torques offer fast data processing speed, low power consumption, and unlimited endurance for future information processing applications. Analogous to conventional CMOS technology, it is important to develop a pair of complementary spin-orbit devices with differentiated magnetization switching senses as elementary building blocks for realizing sophisticated logic functionalities. Various attempts using external magnetic field or complicated stack/circuit designs have been proposed, however, plainer and more feasible approaches are still strongly desired. Here we show that a pair of two locally laser annealed perpendicular Pt/Co/Pt devices with opposite laser track configurations and thereby inverse field-free lateral spin-orbit torques (LSOTs) induced switching senses can be adopted as such complementary spin-orbit building blocks. By electrically programming the initial magnetization states (spin down/up) of each sample, four Boolean logic gates of AND, OR, NAND and NOR, as well as a spin-orbit half adder containing an XOR gate, were obtained. Moreover, various initialization-free, working current intensity-programmable stateful logic operations, including Material Implication (IMP) gate, were also demonstrated by regarding the magnetization state as a logic input. Our complementary LSOT building blocks provide a potentially applicable way towards future efficient spin logics and in-memory computing architectures.
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Complementary lateral-spin-orbit building blocks for programmable logic and in-memory computing
'Wiley', 2020Co-Authors: Zhang Nan, Yi Cao, Li Yucai, Ji Yang, Zheng Houzhi, Rushforth, Andrew W., Wang KaiyouAbstract:Current-driven switching of nonvolatile spintronic Materials and devices based on spin-orbit torques offer fast data processing speed, low power consumption, and unlimited endurance for future information processing applications. Analogous to conventional CMOS technology, it is important to develop a pair of complementary spin-orbit devices with differentiated magnetization switching senses as elementary building blocks for realizing sophisticated logic functionalities. Various attempts using external magnetic field or complicated stack/circuit designs have been proposed, however, plainer and more feasible approaches are still strongly desired. Here we show that a pair of two locally laser annealed perpendicular Pt/Co/Pt devices with opposite laser track configurations and thereby inverse field-free lateral spin-orbit torques (LSOTs) induced switching senses can be adopted as such complementary spin-orbit building blocks. By electrically programming the initial magnetization states (spin down/up) of each sample, four Boolean logic gates of AND, OR, NAND and NOR, as well as a spin-orbit half adder containing an XOR gate, were obtained. Moreover, various initialization-free, working current intensity-programmable stateful logic operations, including the Material Implication (IMP) gate, were also demonstrated by regarding the magnetization state as a logic input. Our complementary LSOT building blocks provide an applicable way towards future efficient spin logics and in-memory computing architectures.Comment: 22 pages, 4 figure
Rainer Waser - One of the best experts on this subject based on the ideXlab platform.
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beyond von neumann logic operations in passive crossbar arrays alongside memory operations
Nanotechnology, 2012Co-Authors: Eike Linn, R Rosezin, Stefan Tappertzhofen, U Bottger, Rainer WaserAbstract:The realization of logic operations within passive crossbar memory arrays is a promising approach to expand the fields of application of such architectures. Material Implication was recently suggested as the basic function of memristive crossbar junctions, and single bipolar resistive switches (BRS) as well as complementary resistive switches (CRS) were shown to be capable of realizing this logical functionality. Based on a systematic analysis of the Boolean functions, we demonstrate here that 14 of 16 Boolean functions can be realized with a single BRS or CRS cell in at most three sequential cycles. Since the read-out step is independent of the logic operation steps, the result of the logic operation is directly stored to memory, making logic-in-memory applications feasible.
Duncan R Stewart - One of the best experts on this subject based on the ideXlab platform.
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Memristive switches enable stateful logic operations via Material Implication
Nature, 2010Co-Authors: Julien Borghetti, Philip J. Kuekes, Gregory S. Snider, J. Joshua Yang, Duncan R StewartAbstract:The authors of the International Technology Roadmap for Semiconductors-the industry consensus set of goals established for advancing silicon integrated circuit technology-have challenged the computing research community to find new physical state variables (other than charge or voltage), new devices, and new architectures that offer memory and logic functions beyond those available with standard transistors. Recently, ultra-dense resistive memory arrays built from various two-terminal semiconductor or insulator thin film devices have been demonstrated. Among these, bipolar voltage-actuated switches have been identified as physical realizations of 'memristors' or memristive devices, combining the electrical properties of a memory element and a resistor. Such devices were first hypothesized by Chua in 1971 (ref. 15), and are characterized by one or more state variables that define the resistance of the switch depending upon its voltage history. Here we show that this family of nonlinear dynamical memory devices can also be used for logic operations: we demonstrate that they can execute Material Implication (IMP), which is a fundamental Boolean logic operation on two variables p and q such that pIMPq is equivalent to (NOTp)ORq. Incorporated within an appropriate circuit, memristive switches can thus perform 'stateful' logic operations for which the same devices serve simultaneously as gates (logic) and latches (memory) that use resistance instead of voltage or charge as the physical state variable.
Dmitri B Strukov - One of the best experts on this subject based on the ideXlab platform.
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optimized stateful Material Implication logic for three dimensional data manipulation
Nano Research, 2016Co-Authors: Gina C Adam, Brian D Hoskins, Mirko Prezioso, Dmitri B StrukovAbstract:The monolithic three-dimensional integration of memory and logic circuits could dramatically improve the performance and energy efficiency of computing systems. Some conventional and emerging memories are suitable for vertical integration, including highly scalable metal-oxide resistive switching devices (“memristors”). However, the integration of logic circuits has proven to be much more challenging than expected. In this study, we demonstrated memory and logic functionality in a monolithic three-dimensional circuit by adapting the recently proposed memristor-based stateful Material Implication logic. By modifying the original circuit to increase its robustness to device imperfections, we experimentally showed, for the first time, a reliable multi-cycle multi-gate Material Implication logic operation and half-adder circuit within a threedimensional stack of monolithically integrated memristors. Direct data manipulation in three dimensions enables extremely compact and high-throughput logicin- memory computing and, remarkably, presents a viable solution for the Feynman Grand Challenge of implementing an 8-bit adder at the nanoscale.
Zhang Nan - One of the best experts on this subject based on the ideXlab platform.
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Complementary Lateral-Spin-Orbit Building Blocks for Programmable Logic and In-Memory Computing
'Wiley', 2020Co-Authors: Rushforth Andrew, Zhang Nan, Yi Cao, Li Yucai, Ji Yang, Zheng Houzhi, Wang KaiyouAbstract:Current-driven switching of nonvolatile spintronic Materials and devices based on spin-orbit torques offer fast data processing speed, low power consumption, and unlimited endurance for future information processing applications. Analogous to conventional CMOS technology, it is important to develop a pair of complementary spin-orbit devices with differentiated magnetization switching senses as elementary building blocks for realizing sophisticated logic functionalities. Various attempts using external magnetic field or complicated stack/circuit designs have been proposed, however, plainer and more feasible approaches are still strongly desired. Here we show that a pair of two locally laser annealed perpendicular Pt/Co/Pt devices with opposite laser track configurations and thereby inverse field-free lateral spin-orbit torques (LSOTs) induced switching senses can be adopted as such complementary spin-orbit building blocks. By electrically programming the initial magnetization states (spin down/up) of each sample, four Boolean logic gates of AND, OR, NAND and NOR, as well as a spin-orbit half adder containing an XOR gate, were obtained. Moreover, various initialization-free, working current intensity-programmable stateful logic operations, including Material Implication (IMP) gate, were also demonstrated by regarding the magnetization state as a logic input. Our complementary LSOT building blocks provide a potentially applicable way towards future efficient spin logics and in-memory computing architectures.
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Complementary lateral-spin-orbit building blocks for programmable logic and in-memory computing
'Wiley', 2020Co-Authors: Zhang Nan, Yi Cao, Li Yucai, Ji Yang, Zheng Houzhi, Rushforth, Andrew W., Wang KaiyouAbstract:Current-driven switching of nonvolatile spintronic Materials and devices based on spin-orbit torques offer fast data processing speed, low power consumption, and unlimited endurance for future information processing applications. Analogous to conventional CMOS technology, it is important to develop a pair of complementary spin-orbit devices with differentiated magnetization switching senses as elementary building blocks for realizing sophisticated logic functionalities. Various attempts using external magnetic field or complicated stack/circuit designs have been proposed, however, plainer and more feasible approaches are still strongly desired. Here we show that a pair of two locally laser annealed perpendicular Pt/Co/Pt devices with opposite laser track configurations and thereby inverse field-free lateral spin-orbit torques (LSOTs) induced switching senses can be adopted as such complementary spin-orbit building blocks. By electrically programming the initial magnetization states (spin down/up) of each sample, four Boolean logic gates of AND, OR, NAND and NOR, as well as a spin-orbit half adder containing an XOR gate, were obtained. Moreover, various initialization-free, working current intensity-programmable stateful logic operations, including the Material Implication (IMP) gate, were also demonstrated by regarding the magnetization state as a logic input. Our complementary LSOT building blocks provide an applicable way towards future efficient spin logics and in-memory computing architectures.Comment: 22 pages, 4 figure
