The Experts below are selected from a list of 53235 Experts worldwide ranked by ideXlab platform
Jinkyu Yang - One of the best experts on this subject based on the ideXlab platform.
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Origami-based tunable truss structures for non-volatile mechanical Memory Operation
Nature Communications, 2017Co-Authors: Hiromi Yasuda, Mia Lee, Tomohiro Tachi, Jinkyu YangAbstract:Origami has recently received significant interest from the scientific community as a method for designing building blocks to construct metamaterials. However, the primary focus has been placed on their kinematic applications by leveraging the compactness and auxeticity of planar origami platforms. Here, we present volumetric origami cells—specifically triangulated cylindrical origami (TCO)—with tunable stability and stiffness, and demonstrate their feasibility as non-volatile mechanical Memory storage devices. We show that a pair of TCO cells can develop a double-well potential to store bit information. What makes this origami-based approach more appealing is the realization of two-bit mechanical Memory, in which two pairs of TCO cells are interconnected and one pair acts as a control for the other pair. By assembling TCO-based truss structures, we experimentally verify the tunable nature of the TCO units and demonstrate the Operation of purely mechanical one- and two-bit Memory storage prototypes. Origami is a popular method to design building blocks for mechanical metamaterials. Here, the authors assemble a volumetric origami-based structure, predict its axial and rotational movements during folding, and demonstrate the Operation of mechanical one- and two-bit Memory storage.
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Origami-based tunable truss structures for non-volatile mechanical Memory Operation
Nature Communications, 2017Co-Authors: Hiromi Yasuda, Mia Lee, Tomohiro Tachi, Jinkyu YangAbstract:Origami has recently received significant interest from the scientific community as a building block for constructing metamaterials. However, the primary focus has been placed on their kinematic applications, such as deployable space structures and sandwich core materials, by leveraging the compactness and auxeticity of planar origami platforms. Here, we present volumetric origami cells -- specifically triangulated cylindrical origami (TCO) -- with tunable stability and stiffness, and demonstrate their feasibility as non-volatile mechanical Memory storage devices. We show that a pair of origami cells can develop a double-well potential to store bit information without the need of residual forces. What makes this origami-based approach more appealing is the realization of two-bit mechanical Memory, in which two pairs of TCO cells are interconnected and one pair acts as a control for the other pair. Using TCO-based truss structures, we present an experimental demonstration of purely mechanical one- and two-bit Memory storage mechanisms.
Hong X Tang - One of the best experts on this subject based on the ideXlab platform.
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dynamic manipulation of nanomechanical resonators in the high amplitude regime and non volatile mechanical Memory Operation
Nature Nanotechnology, 2011Co-Authors: Mahmood Bagheri, Menno Poot, Wolfram P H Pernice, Hong X TangAbstract:A nanoscale optomechanical resonator in a double-well potential has been excited into the high-amplitude regime, and then optically cooled to a specific at-rest configuration, which allows it to be operated as a non-volatile Memory element.
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dynamic manipulation of nanomechanical resonators in the high amplitude regime and non volatile mechanical Memory Operation
Nature Nanotechnology, 2011Co-Authors: Mahmood Bagheri, Menno Poot, Wolfram P H Pernice, Hong X TangAbstract:The ability to control mechanical motion with optical forces has made it possible to cool mechanical resonators to their quantum ground states. The same techniques can also be used to amplify rather than reduce the mechanical motion of such systems. Here, we study nanomechanical resonators that are slightly buckled and therefore have two stable configurations, denoted 'buckled up' and 'buckled down', when they are at rest. The motion of these resonators can be described by a double-well potential with a large central energy barrier between the two stable configurations. We demonstrate the high-amplitude Operation of a buckled resonator coupled to an optical cavity by using a highly efficient process to generate enough phonons in the resonator to overcome the energy barrier in the double-well potential. This allows us to observe the first evidence for nanomechanical slow-down and a zero-frequency singularity predicted by theorists. We also demonstrate a non-volatile mechanical Memory element in which bits are written and reset by using optomechanical backaction to direct the relaxation of a resonator in the high-amplitude regime to a specific stable configuration.
F Raineri - One of the best experts on this subject based on the ideXlab platform.
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iii v on si photonic crystal nanocavity laser technology for optical static random access memories
IEEE Journal of Selected Topics in Quantum Electronics, 2016Co-Authors: Theoni Alexoudi, D Fitsios, Alexandre Bazin, P Monnier, A Miliou, G T Kanellos, N Pleros, F RaineriAbstract:Heterogeneous integration of III-V semiconductors on silicon has gained considerable momentum fueled by the need to implement fully functional photonic devices and circuits in a CMOS compatible platform. In this communication, we report on a III-V photonic crystal (PhC) nanocavity, heterogeneously integrated on a silicon-on-insulator platform, to form a PhC nanocavity laser capable of exhibiting two elementary static random access Memory (SRAM) cell functions individually, namely switching and latching Operations under a high-speed, bit-level regime. As such, the PhC nanocavity laser is examined as a generic logic functions building block, suitable toward multiGb/s energy-efficient, optical SRAM cells with minimal device footprint. The proposed device occupies a total area of only 6.2 μm2 , rendering in this way the demonstrated Memory element the smallest among the integrated optical memories presented so far. Bit-level SRAM cell Operation requires two elementary functions: the access gate (AG) switching function and set-reset flip-flop (SR-FF) latching function. At first, AG switching Operation is evaluated through successful wavelength conversion at 10 Gb/s, revealing a power penalty of 1 dB at 10–9 BER and a switching energy of only 4.8 fJ/bit. Then, fully functional SR-FF Memory Operation is successfully demonstrated, exhibiting error-free Operation with negative power penalty at 5 Gb/s and switching energies of 6.4 fJ/bit. FF Operation at higher speeds of 10 Gb/s with reduced switching energy levels of 3.2 fJ/bit is also experimentally investigated. Both logic Operations were demonstrated separately with the same PhC nanocavity laser device exhibiting <50 ps switching times and evaluated under real-type data traffic patterns, raising expectations for beyond 20 Gb/s capabilities toward implementing energy-efficient, ultracompact and high-speed true optical SRAM setups for Datacom applications.
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iii v soi photonic crystal nanolaser for high speed wavelength conversion and Memory Operation
Optical Fiber Communication Conference, 2016Co-Authors: Theoni Alexoudi, D Fitsios, Alexandre Bazin, P Monnier, A Miliou, G T Kanellos, N Pleros, F RaineriAbstract:We experimentally demonstrate wavelength conversion and bit-level Memory Operation in a hybridly integrated III-V on SOI photonic crystal nanolaser with total footprint of 6.2μm2 and record-energy of 6.4fJ/bit, showing error-free Operation at 5Gb/s.
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ultra compact iii v on si photonic crystal Memory for flip flop Operation at 5 gb s
Optics Express, 2016Co-Authors: D Fitsios, Theoni Alexoudi, Alexandre Bazin, P Monnier, A Miliou, G T Kanellos, N Pleros, F RaineriAbstract:We report on a photonic crystal (PhC) nanolaser based on the heterogeneous integration of a III-V PhC nanocavity on SOI, configured to operate as a Set-Reset Flip-Flop (SR-FF). The active layer is a nanobeam cavity made of a 650nm × 285nm InP-based wire waveguide evanescently coupled to 500nm × 220nm SOI wire waveguides, demonstrating a record-low footprint of only 6.2μm2. Injection locking enables optical bistability allowing for Memory Operation with only 6.4fJ/bit switching energies and <50ps response times. Bit-level SR-FF Memory Operation was evaluated at 5Gb/s with PRBS-resembling data patterns, revealing error free Operation with a negative power penalty.
Hiromi Yasuda - One of the best experts on this subject based on the ideXlab platform.
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Origami-based tunable truss structures for non-volatile mechanical Memory Operation
Nature Communications, 2017Co-Authors: Hiromi Yasuda, Mia Lee, Tomohiro Tachi, Jinkyu YangAbstract:Origami has recently received significant interest from the scientific community as a method for designing building blocks to construct metamaterials. However, the primary focus has been placed on their kinematic applications by leveraging the compactness and auxeticity of planar origami platforms. Here, we present volumetric origami cells—specifically triangulated cylindrical origami (TCO)—with tunable stability and stiffness, and demonstrate their feasibility as non-volatile mechanical Memory storage devices. We show that a pair of TCO cells can develop a double-well potential to store bit information. What makes this origami-based approach more appealing is the realization of two-bit mechanical Memory, in which two pairs of TCO cells are interconnected and one pair acts as a control for the other pair. By assembling TCO-based truss structures, we experimentally verify the tunable nature of the TCO units and demonstrate the Operation of purely mechanical one- and two-bit Memory storage prototypes. Origami is a popular method to design building blocks for mechanical metamaterials. Here, the authors assemble a volumetric origami-based structure, predict its axial and rotational movements during folding, and demonstrate the Operation of mechanical one- and two-bit Memory storage.
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Origami-based tunable truss structures for non-volatile mechanical Memory Operation
Nature Communications, 2017Co-Authors: Hiromi Yasuda, Mia Lee, Tomohiro Tachi, Jinkyu YangAbstract:Origami has recently received significant interest from the scientific community as a building block for constructing metamaterials. However, the primary focus has been placed on their kinematic applications, such as deployable space structures and sandwich core materials, by leveraging the compactness and auxeticity of planar origami platforms. Here, we present volumetric origami cells -- specifically triangulated cylindrical origami (TCO) -- with tunable stability and stiffness, and demonstrate their feasibility as non-volatile mechanical Memory storage devices. We show that a pair of origami cells can develop a double-well potential to store bit information without the need of residual forces. What makes this origami-based approach more appealing is the realization of two-bit mechanical Memory, in which two pairs of TCO cells are interconnected and one pair acts as a control for the other pair. Using TCO-based truss structures, we present an experimental demonstration of purely mechanical one- and two-bit Memory storage mechanisms.
Themis Prodromakis - One of the best experts on this subject based on the ideXlab platform.
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multibit Memory Operation of metal oxide bi layer memristors
Scientific Reports, 2017Co-Authors: Spyros Stathopoulos, Ali Khiat, Maria Trapatseli, Simone Cortese, Alexantrou Serb, Ilia Valov, Themis ProdromakisAbstract:Emerging nanoionic memristive devices are considered as the Memory technology of the future and have been winning a great deal of attention due to their ability to perform fast and at the expense of low-power and -space requirements. Their full potential is envisioned that can be fulfilled through their capacity to store multiple Memory states per cell, which however has been constrained so far by issues affecting the long-term stability of independent states. Here, we introduce and evaluate a multitude of metal-oxide bi-layers and demonstrate the benefits from increased Memory stability via multibit Memory Operation. We propose a programming methodology that allows for operating metal-oxide memristive devices as multibit Memory elements with highly packed yet clearly discernible Memory states. These states were found to correlate with the transport properties of the introduced barrier layers. We are demonstrating Memory cells with up to 6.5 bits of information storage as well as excellent retention and power consumption performance. This paves the way for neuromorphic and non-volatile Memory applications.
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multibit Memory Operation of metal oxide bi layer memristors
arXiv: Mesoscale and Nanoscale Physics, 2017Co-Authors: Spyros Stathopoulos, Ali Khiat, Maria Trapatseli, Simone Cortese, Alexantrou Serb, Ilia Valov, Themis ProdromakisAbstract:In this work, we evaluate a multitude of metal-oxide bi-layers and demonstrate the benefits from increased Memory stability via multibit Memory Operation. We introduce a programming methodology that allows for operating metal-oxide memristive devices as multibit Memory elements with highly packed yet clearly discernible Memory states. We finally demonstrate a 5.5-bit Memory cell (47 resistive states) with excellent retention and power consumption performance. This paves the way for neuromorphic and non-volatile Memory applications.