The Experts below are selected from a list of 315 Experts worldwide ranked by ideXlab platform

Apostolos T Voutsas - One of the best experts on this subject based on the ideXlab platform.

  • top emitting 230 dots in active matrix polymer light emitting diode displays on flexible Metal Foil substrates
    Applied Physics Letters, 2007
    Co-Authors: Tako Chuang, Matias Troccoli, Abbas Jamshidiroudbari, Miltiadis K Hatalis, Ivan Biaggio, Apostolos T Voutsas
    Abstract:

    A top-emitting 230dots∕in. monochrome active-matrix polymer light-emitting diode (PLED) display having the VGA format and fabricated on a flexible steel Foil utilizing the polycrystalline silicon thin-film transistor (TFT) technology is reported. The pixel circuitry architecture consists of the conventional two TFT circuitries made of two p-channel Metal-oxide-semiconductor (PMOS) transistors and one storage capacitor. The average field-effect hole mobility and threshold voltage of the PMOS polysilicon TFTs fabricated on the Metal Foil are 37(±4)cm2∕Vs and −1.9(±0.6)V, respectively. The light turn-on voltage of the PLED is 4.0V.

  • Top-emitting 230 dots/in, active-matrix polymer light-emitting diode displays on flexible Metal Foil substrates
    Applied Physics Letters, 2007
    Co-Authors: Tako Chuang, Matias Troccoli, Miltiadis K Hatalis, Ivan Biaggio, Po-chin Kuo, Abbas Jamshidi-roudbari, Apostolos T Voutsas
    Abstract:

    A top-emitting 230dots∕in. monochrome active-matrix polymer light-emitting diode (PLED) display having the VGA format and fabricated on a flexible steel Foil utilizing the polycrystalline silicon thin-film transistor (TFT) technology is reported. The pixel circuitry architecture consists of the conventional two TFT circuitries made of two p-channel Metal-oxide-semiconductor (PMOS) transistors and one storage capacitor. The average field-effect hole mobility and threshold voltage of the PMOS polysilicon TFTs fabricated on the Metal Foil are 37(±4)cm2∕Vs and −1.9(±0.6)V, respectively. The light turn-on voltage of the PLED is 4.0V.

  • Process Technology for High-Resolution AM-PLED Displays on Flexible Metal-Foil Substrates
    Electrochemical and Solid-State Letters, 2007
    Co-Authors: Tako Chuang, Matias Troccoli, Miltiadis K Hatalis, Apostolos T Voutsas, Po-chin Kuo, Abbas Jamshidi-roudbari, Themis Afentakis
    Abstract:

    The first successful integration of a polysilicon thin-film transistor (TFT) backplane with polymer light-emitting diodes (PLEDs) onto a flexible stainless steel Foil is described, and a high-resolution (230 dots/in.) monochrome active-matrix polymer light-emitting diode (AM-PLED) display is demonstrated. The process technology required to implement this high-resolution AM-PLED display onto a flexible Metal-Foil substrate is discussed. This technology primarily consists of the preparation of flexible Metal Foil, fabrication of the active matrix polysilicon TFT backplane, and integration with top-emitting PLEDs.

Carolin M. Fella - One of the best experts on this subject based on the ideXlab platform.

  • doping of polycrystalline cdte for high efficiency solar cells on flexible Metal Foil
    Nature Communications, 2013
    Co-Authors: L. Kranz, Erik Cheah, Christina Gretener, Fabio La Mattina, Patrick Blösch, Fabian Pianezzi, Julian Perrenoud, Rafael Schmitt, Adrian Chirilă, Carolin M. Fella
    Abstract:

    Flexible CdTe solar cells on Metal Foil substrates are promising for low-cost roll-to-roll fabrication, but their efficiency is usually low because of their inverted structure. By controlling the doping of the CdTe layer with copper, Kranz et al. show that efficiencies up to 13.6% can be obtained.

  • Doping of polycrystalline CdTe for high-efficiency solar cells on flexible Metal Foil
    Nature Communications, 2013
    Co-Authors: L. Kranz, Erik Cheah, Christina Gretener, Fabio La Mattina, Patrick Blösch, Fabian Pianezzi, Julian Perrenoud, Rafael Schmitt, Adrian Chirilă, Carolin M. Fella
    Abstract:

    Roll-to-roll manufacturing of CdTe solar cells on flexible Metal Foil substrates is one of the most attractive options for low-cost photovoltaic module production. However, various efforts to grow CdTe solar cells on Metal Foil have resulted in low efficiencies. This is caused by the fact that the conventional device structure must be inverted, which imposes severe restrictions on device processing and consequently limits the electronic quality of the CdTe layer. Here we introduce an innovative concept for the controlled doping of the CdTe layer in the inverted device structure by means of evaporation of sub-monolayer amounts of Cu and subsequent annealing, which enables breakthrough efficiencies up to 13.6%. For the first time, CdTe solar cells on Metal Foil exceed the 10% efficiency threshold for industrialization. The controlled doping of CdTe with Cu leads to increased hole density, enhanced carrier lifetime and improved carrier collection in the solar cell. Our results offer new research directions for solving persistent challenges of CdTe photovoltaics. Flexible CdTe solar cells on Metal Foil substrates are promising for low-cost roll-to-roll fabrication, but their efficiency is usually low because of their inverted structure. By controlling the doping of the CdTe layer with copper, Kranz et al . show that efficiencies up to 13.6% can be obtained.

  • Doping of polycrystalline CdTe for high-efficiency solar cells on flexible Metal Foil.
    Nature Communications, 2013
    Co-Authors: L. Kranz, Erik Cheah, Timo Jaeger, Harald Hagendorfer, Stephan Buecheler, Shiro Nishiwaki, Rafael Schmitt, Julian Perrenoud, Fabian Pianezzi, Christina Gretener, Alexander R. Uhl, Patrick Blösch, P. Bloesch, Adrian Chirilǎ, Fabio La Mattina, Carolin M. Fella, A.n Tiwari
    Abstract:

    Roll-to-roll manufacturing of CdTe solar cells on flexible Metal Foil substrates is one of the most attractive options for low-cost photovoltaic module production. However, various efforts to grow CdTe solar cells on Metal Foil have resulted in low efficiencies. This is caused by the fact that the conventional device structure must be inverted, which imposes severe restrictions on device processing and consequently limits the electronic quality of the CdTe layer. Here we introduce an innovative concept for the controlled doping of the CdTe layer in the inverted device structure by means of evaporation of sub-monolayer amounts of Cu and subsequent annealing, which enables breakthrough efficiencies up to 13.6%. For the first time, CdTe solar cells on Metal Foil exceed the 10% efficiency threshold for industrialization. The controlled doping of CdTe with Cu leads to increased hole density, enhanced carrier lifetime and improved carrier collection in the solar cell. Our results offer new research directions for solving persistent challenges of CdTe photovoltaics.

Tako Chuang - One of the best experts on this subject based on the ideXlab platform.

  • top emitting 230 dots in active matrix polymer light emitting diode displays on flexible Metal Foil substrates
    Applied Physics Letters, 2007
    Co-Authors: Tako Chuang, Matias Troccoli, Abbas Jamshidiroudbari, Miltiadis K Hatalis, Ivan Biaggio, Apostolos T Voutsas
    Abstract:

    A top-emitting 230dots∕in. monochrome active-matrix polymer light-emitting diode (PLED) display having the VGA format and fabricated on a flexible steel Foil utilizing the polycrystalline silicon thin-film transistor (TFT) technology is reported. The pixel circuitry architecture consists of the conventional two TFT circuitries made of two p-channel Metal-oxide-semiconductor (PMOS) transistors and one storage capacitor. The average field-effect hole mobility and threshold voltage of the PMOS polysilicon TFTs fabricated on the Metal Foil are 37(±4)cm2∕Vs and −1.9(±0.6)V, respectively. The light turn-on voltage of the PLED is 4.0V.

  • Top-emitting 230 dots/in, active-matrix polymer light-emitting diode displays on flexible Metal Foil substrates
    Applied Physics Letters, 2007
    Co-Authors: Tako Chuang, Matias Troccoli, Miltiadis K Hatalis, Ivan Biaggio, Po-chin Kuo, Abbas Jamshidi-roudbari, Apostolos T Voutsas
    Abstract:

    A top-emitting 230dots∕in. monochrome active-matrix polymer light-emitting diode (PLED) display having the VGA format and fabricated on a flexible steel Foil utilizing the polycrystalline silicon thin-film transistor (TFT) technology is reported. The pixel circuitry architecture consists of the conventional two TFT circuitries made of two p-channel Metal-oxide-semiconductor (PMOS) transistors and one storage capacitor. The average field-effect hole mobility and threshold voltage of the PMOS polysilicon TFTs fabricated on the Metal Foil are 37(±4)cm2∕Vs and −1.9(±0.6)V, respectively. The light turn-on voltage of the PLED is 4.0V.

  • Process Technology for High-Resolution AM-PLED Displays on Flexible Metal-Foil Substrates
    Electrochemical and Solid-State Letters, 2007
    Co-Authors: Tako Chuang, Matias Troccoli, Miltiadis K Hatalis, Apostolos T Voutsas, Po-chin Kuo, Abbas Jamshidi-roudbari, Themis Afentakis
    Abstract:

    The first successful integration of a polysilicon thin-film transistor (TFT) backplane with polymer light-emitting diodes (PLEDs) onto a flexible stainless steel Foil is described, and a high-resolution (230 dots/in.) monochrome active-matrix polymer light-emitting diode (AM-PLED) display is demonstrated. The process technology required to implement this high-resolution AM-PLED display onto a flexible Metal-Foil substrate is discussed. This technology primarily consists of the preparation of flexible Metal Foil, fabrication of the active matrix polysilicon TFT backplane, and integration with top-emitting PLEDs.

  • Active-matrix organic light-emitting displays on flexible Metal Foils
    Cockpit and Future Displays for Defense and Security, 2005
    Co-Authors: Tako Chuang, Matias Troccoli, Miltiadis K Hatalis, A. Jamshidi Roudbari, Y. L. Chang, G. Reed, Jeffery A. Spirko, Kamil Klier, S. Preis, R. Pearson
    Abstract:

    This paper describes the development of a 3.5 inch diagonal Active Matrix Organic Light Emitting Diode Display on flexible Metal Foils. The active matrix array had the VGA format and was fabricated using the polysilicon TFT technology. The advantages that the Metal Foil substrates offer for flexible display applications will first be discussed, followed by a discussion on the multilayer coatings that were investigated in order to achieve a high quality insulating layer on the Metal Foil substrate prior to TFT fabrication. Then the polysilicon TFT device performance will be presented as a function of the polysilicon crystallization method. Both laser crystallized polysilicon and solid phased crystallized polysilicon films were investigated for the TFT device fabrication. Due to the opaque nature of the Metal Foil substrates the display had a top emission structure. Both small molecule and polymer based organic material were investigated for the display emissive part. The former were evaporated while the latter were applied by spin-cast. Various transparent multi-layer Metal films were investigated as the top cathode. The approach used to package the finished AMOLED display in order to protect the organic layers from environmental degradation will be described. The display had integrated polysilicon TFT scan drivers consisting of shift registers and buffers but external data drivers. The driving approach of the display will be discussed in detail. The performance of the finished display will be discussed as a function of the various materials and fabrication processes that were investigated.

Jin Jang - One of the best experts on this subject based on the ideXlab platform.

  • Mechanical stability of poly-Si TFT on Metal Foil
    Solid-State Electronics, 2008
    Co-Authors: Jun Hyuk Cheon, Jung Ho Bae, Jin Jang
    Abstract:

    Abstract We have studied the mechanical stability of poly-Si thin-film transistor on 50 μm-thick flexible Metal Foil with a field-effect mobility of 81.2 cm 2 /V s, a threshold voltage of −2.4 V, and an on/off current ratio of 10 6 . We have measured the electrical properties under various compressive and tensile strains by changing the bending radius of the base Metal Foil. We have found that the TFT is stable until the bending radius of 50 mm which corresponds to the strain of ∼1.4%.

  • High-performance hydrogenated amorphous silicon TFT on flexible Metal Foil with polyimide planarization
    Journal of Non-Crystalline Solids, 2008
    Co-Authors: Hwan Kim, Ji Ho Hur, Jun Hyuk Cheon, Jung Ho Bae, Eung Bum Kim, Jin Jang
    Abstract:

    Abstract We have studied the fabrication of hydrogenated amorphous silicon (a-Si:H) thin-film transistor (TFT) on flexible Metal Foil with polyimide planarization. The Metal Foil was coated with polyimide (PI) two times for palanarization with the total thickness of 2.6 μm. The PI was chosen because of its superior planarization capability, easy spin-on process and relatively high temperature process. To coat a PI layer two step process was carried out; room temperature coating and annealing at 180 °C for 1 h and then 300 °C curing for 1 h. The RMS surface roughness was changed from 663 to 20.6 A by two times coatings. The a-Si:H TFT on the PI planarized Metal Foil exhibited the field-effect mobility of 1.47 cm 2 /V s and a threshold voltage of 1.8 V. The flexibility of the high-performance TFT was studied for AMOLED backplane application.

  • Coplanar Poly-Si TFT on Flexible Metal Foil Using Spin-On Glass as Gate Insulator and Planarization
    Electrochemical and Solid-State Letters, 2008
    Co-Authors: Jun Hyuk Cheon, Jung Ho Bae, Won Gyu Lee, Jin Jang
    Abstract:

    Methylsiloxane-based spin-on-glass (M-SOG) has been applied to a polycrystalline silicon thin-film transistor (TFT) on a 40 μm-thick flexible Metal Foil as a gate dielectric and planarization layer as well. Triple spin coatings and curing of M-SOG layers reduce the surface roughness of the Metal Foil from 800 to 56 A. The p-channel Metal-induced crystallization of a-Si using a cap TFT using M-SOG on a Metal Foil exhibited a field-effect mobility of 51.1 cm 2 /V s, a threshold voltage of -4.3 V, and a minimum off-state current of

  • P‐28: Flexibility Study of High‐Performance LTPS‐TFT on Flexible Metal Foil
    SID Symposium Digest of Technical Papers, 2007
    Co-Authors: Jun Hyuk Cheon, Jung Ho Bae, Jin Jang
    Abstract:

    We have studied the flexibility of the p-channel LTPS-TFT on 150-μm-thick flexible Metal Foil. The p-channel, non-laser poly-Si TFT on the Metal Foil exhibited the field-effect mobility of 107.5 cm2/Vs, the threshold voltage of −6.7 V, the gate voltage swing of 0.9 V/dec., and the minimum off current of 10−12 A/μm at Vds=−0.1 V. The TFT performance is stable until 10,000 bendings with the strain of 0.6%.

  • Active-matrix OLED on bendable Metal Foil
    IEEE Transactions on Electron Devices, 2006
    Co-Authors: Jung Hee Cheon, Ji Ho Hur, Yeon Gon Mo, Hyun Soo Shin, Jong Hyun Choi, Jin Jang, Jae Kyeong Jeong, Ho Kyoon Chung
    Abstract:

    This brief report; a flexible active-matrix organic light-emitting\ndiode display based on a poly-Si thin-film transistor (TFT) backplane.\nThe p-channel poly-Si TFTs on Metal Foil exhibited a maximum field-effect\nmobility of 86.1 cm(2)/Vs, threshold voltage of 3.5 V, gate voltage\nswing of 0.8 V/dec, and the minimum off current of 10(-12) A/mu m\nat V-ds = -0.1 V. A 4.1-in active-matrix backplane was fabricated\nwith the poly-Si TFT with a conventional pixel circuit consisting\nof 2 TFTs and one capacitor. The scan driver circuits with PMOS were\nintegrated on the flexible Metal Foil. The to emission, organic light\nemitting display having a brightness of 100 cd/m(2).

L. Kranz - One of the best experts on this subject based on the ideXlab platform.

  • doping of polycrystalline cdte for high efficiency solar cells on flexible Metal Foil
    Nature Communications, 2013
    Co-Authors: L. Kranz, Erik Cheah, Christina Gretener, Fabio La Mattina, Patrick Blösch, Fabian Pianezzi, Julian Perrenoud, Rafael Schmitt, Adrian Chirilă, Carolin M. Fella
    Abstract:

    Flexible CdTe solar cells on Metal Foil substrates are promising for low-cost roll-to-roll fabrication, but their efficiency is usually low because of their inverted structure. By controlling the doping of the CdTe layer with copper, Kranz et al. show that efficiencies up to 13.6% can be obtained.

  • Doping of polycrystalline CdTe for high-efficiency solar cells on flexible Metal Foil
    Nature Communications, 2013
    Co-Authors: L. Kranz, Erik Cheah, Christina Gretener, Fabio La Mattina, Patrick Blösch, Fabian Pianezzi, Julian Perrenoud, Rafael Schmitt, Adrian Chirilă, Carolin M. Fella
    Abstract:

    Roll-to-roll manufacturing of CdTe solar cells on flexible Metal Foil substrates is one of the most attractive options for low-cost photovoltaic module production. However, various efforts to grow CdTe solar cells on Metal Foil have resulted in low efficiencies. This is caused by the fact that the conventional device structure must be inverted, which imposes severe restrictions on device processing and consequently limits the electronic quality of the CdTe layer. Here we introduce an innovative concept for the controlled doping of the CdTe layer in the inverted device structure by means of evaporation of sub-monolayer amounts of Cu and subsequent annealing, which enables breakthrough efficiencies up to 13.6%. For the first time, CdTe solar cells on Metal Foil exceed the 10% efficiency threshold for industrialization. The controlled doping of CdTe with Cu leads to increased hole density, enhanced carrier lifetime and improved carrier collection in the solar cell. Our results offer new research directions for solving persistent challenges of CdTe photovoltaics. Flexible CdTe solar cells on Metal Foil substrates are promising for low-cost roll-to-roll fabrication, but their efficiency is usually low because of their inverted structure. By controlling the doping of the CdTe layer with copper, Kranz et al . show that efficiencies up to 13.6% can be obtained.

  • Doping of polycrystalline CdTe for high-efficiency solar cells on flexible Metal Foil.
    Nature Communications, 2013
    Co-Authors: L. Kranz, Erik Cheah, Timo Jaeger, Harald Hagendorfer, Stephan Buecheler, Shiro Nishiwaki, Rafael Schmitt, Julian Perrenoud, Fabian Pianezzi, Christina Gretener, Alexander R. Uhl, Patrick Blösch, P. Bloesch, Adrian Chirilǎ, Fabio La Mattina, Carolin M. Fella, A.n Tiwari
    Abstract:

    Roll-to-roll manufacturing of CdTe solar cells on flexible Metal Foil substrates is one of the most attractive options for low-cost photovoltaic module production. However, various efforts to grow CdTe solar cells on Metal Foil have resulted in low efficiencies. This is caused by the fact that the conventional device structure must be inverted, which imposes severe restrictions on device processing and consequently limits the electronic quality of the CdTe layer. Here we introduce an innovative concept for the controlled doping of the CdTe layer in the inverted device structure by means of evaporation of sub-monolayer amounts of Cu and subsequent annealing, which enables breakthrough efficiencies up to 13.6%. For the first time, CdTe solar cells on Metal Foil exceed the 10% efficiency threshold for industrialization. The controlled doping of CdTe with Cu leads to increased hole density, enhanced carrier lifetime and improved carrier collection in the solar cell. Our results offer new research directions for solving persistent challenges of CdTe photovoltaics.