The Experts below are selected from a list of 83364 Experts worldwide ranked by ideXlab platform

Jiwook Jang - One of the best experts on this subject based on the ideXlab platform.

Roel Van De Krol - One of the best experts on this subject based on the ideXlab platform.

Girish S Kumar - One of the best experts on this subject based on the ideXlab platform.

  • comparison of modification strategies towards enhanced charge carrier separation and photocatalytic degradation activity of Metal Oxide Semiconductors tio2 wo3 and zno
    Applied Surface Science, 2017
    Co-Authors: Girish S Kumar
    Abstract:

    Metal Oxide Semiconductors (TiO2, WO3 and ZnO) finds unparalleled opportunity in wastewater purification under UV/visible light, largely encouraged by their divergent admirable features like stability, non-toxicity, ease of preparation, suitable band edge positions and facile generation of active oxygen species in the aqueous medium. However, the perennial failings of these photocatalysts emanates from the stumbling blocks like rapid charge carrier recombination and meager visible light response. In this review, tailoring the surface-bulk electronic structure through the calibrated and veritable approaches such as impurity doping, deposition with noble Metals, sensitizing with other compounds (dyes, polymers, inorganic complexes and simple chelating ligands), hydrogenation process (annealing under hydrogen atmosphere), electronic integration with other Semiconductors, modifying with carbon nanostructures, designing with exposed facets and tailoring with hierarchical morphologies to overcome their critical drawbacks are summarized. Taking into account the materials intrinsic properties, the pros and cons together with similarities and striking differences for each strategy in specific to TiO2, WO3 & ZnO are highlighted. These subtlety enunciates the primacy for improving the structure-electronic properties of Metal Oxides and credence to its fore in the practical applications. Future research must focus on comparing the performances of ZnO, TiO2 and W03 in parallel to get insight into their photocatalytic behaviors. Such comparisons not only reveal the changed surface-electronic structure upon various modifications, but also shed light on charge carrier dynamics, free radical generation, structural stability and compatibility for photocatalytic reactions. It is envisioned that these cardinal tactics have profound implications and can be replicated to other semiconductor photocatalysts like CeO2, In2O3, Bi2O3, Fe2O3, BiVO4, AgX, BiOX (X = CI, Br & I), Bi2WO6, Bi2MoO6, etc., to improve their competence for various environmental applications. (C) 2016 Elsevier B.V. All rights reserved.

  • comparison of modification strategies towards enhanced charge carrier separation and photocatalytic degradation activity of Metal Oxide Semiconductors tio2 wo3 and zno
    Applied Surface Science, 2017
    Co-Authors: Girish S Kumar
    Abstract:

    Metal Oxide Semiconductors (TiO2, WO3 and ZnO) finds unparalleled opportunity in wastewater purification under UV/visible light, largely encouraged by their divergent admirable features like stability, non-toxicity, ease of preparation, suitable band edge positions and facile generation of active oxygen species in the aqueous medium. However, the perennial failings of these photocatalysts emanates from the stumbling blocks like rapid charge carrier recombination and meager visible light response. In this review, tailoring the surface-bulk electronic structure through the calibrated and veritable approaches such as impurity doping, deposition with noble Metals, sensitizing with other compounds (dyes, polymers, inorganic complexes and simple chelating ligands), hydrogenation process (annealing under hydrogen atmosphere), electronic integration with other Semiconductors, modifying with carbon nanostructures, designing with exposed facets and tailoring with hierarchical morphologies to overcome their critical drawbacks are summarized. Taking into account the materials intrinsic properties, the pros and cons together with similarities and striking differences for each strategy in specific to TiO2, WO3 & ZnO are highlighted. These subtlety enunciates the primacy for improving the structure-electronic properties of Metal Oxides and credence to its fore in the practical applications. Future research must focus on comparing the performances of ZnO, TiO2 and W03 in parallel to get insight into their photocatalytic behaviors. Such comparisons not only reveal the changed surface-electronic structure upon various modifications, but also shed light on charge carrier dynamics, free radical generation, structural stability and compatibility for photocatalytic reactions. It is envisioned that these cardinal tactics have profound implications and can be replicated to other semiconductor photocatalysts like CeO2, In2O3, Bi2O3, Fe2O3, BiVO4, AgX, BiOX (X = CI, Br & I), Bi2WO6, Bi2MoO6, etc., to improve their competence for various environmental applications. (C) 2016 Elsevier B.V. All rights reserved.

Youn Sang Kim - One of the best experts on this subject based on the ideXlab platform.

  • conductive polymer assisted Metal Oxide hybrid Semiconductors for high performance thin film transistors
    ACS Applied Materials & Interfaces, 2021
    Co-Authors: Eun Goo Lee, Yong Jun Gong, Sungeun Lee, Heebae Kim, Youn Sang Kim
    Abstract:

    Metal Oxide Semiconductors doped with additional inorganic cations have insufficient electron mobility for next-generation electronic devices so strategies to realize the Semiconductors exhibiting stability and high performance are required. To overcome the limitations of conventional inorganic cation doping to improve the electrical characteristics and stability of Metal Oxide Semiconductors, we propose solution-processed high-performance Metal Oxide thin-film transistors (TFTs) by incorporating polyaniline (PANI), a conductive polymer, in a Metal Oxide matrix. The chemical interaction between the Metal Oxide and PANI demonstrated that the defect sites and crystallinity of the semiconductor layer are controllable. In addition, the change in oxygen-related chemical bonding of PANI-doped indium Oxide (InOx) TFTs induces superior electrical characteristics compared to pristine InOx TFTs, even though trace amounts of PANI are doped in the semiconductor. In particular, the average field-effect mobility remarkably enhanced from 15.02 to 26.58 cm2 V-1 s-1, the on/off current ratio improved from 108 to 109, and the threshold voltage became close to 0 V actually from -7.9 to -1.4 V.

  • low temperature solution processed and alkali Metal doped zno for high performance thin film transistors
    Advanced Materials, 2012
    Co-Authors: Si Yu Park, Eom Joo Kim, Kyongju Kim, Moon Sung Kang, Keonhee Lim, Tae Il Lee, Jae M Myoung, Hong Koo Aik, Jeong Ho Cho, Youn Sang Kim
    Abstract:

    ) and its dep-osition requires a high-cost vacuum process. More importantly, the poor transparency of silicon makes it unsuitable for trans-parent applications, and transparency is one of the key issues for future display technology. Consequently, in a search for alterna-tives for amorphous silicon, considerable interest has focused on Metal Oxide Semiconductors, such as In, Ga, or Zn Oxides, as these exhibit high optical transparencies, and have excel-lent electrical properties with high electron mobility, chemical stability, and solution processability. For example, ZnO-based Semiconductors have been successfully incorporated into var-ious electronic devices, such as electron transfer layers for solar cells,

Alberto Vomiero - One of the best experts on this subject based on the ideXlab platform.

  • Metal Oxide Semiconductors for dye- and quantum-dot-sensitized solar cells
    Small, 2015
    Co-Authors: Isabella Concina, Alberto Vomiero
    Abstract:

    This Review provides a brief summary of the most recent research developments in the synthesis and application of nanostructured Metal Oxide Semiconductors for dye sensitized and quantum dot sensitized solar cells. In these devices, the wide bandgap semiconducting Oxide acts as the photoanode, which provides the scaffold for light harvesters (either dye molecules or quantum dots) and electron collection. For this reason, proper tailoring of the optical and electronic properties of the photoanode can significantly boost the functionalities of the operating device. Optimization of the functional properties relies with modulation of the shape and structure of the photoanode, as well as on application of different materials (TiO2 , ZnO, SnO2 ) and/or composite systems, which allow fine tuning of electronic band structure. This aspect is critical because it determines exciton and charge dynamics in the photoelectrochemical system and is strictly connected to the photoconversion efficiency of the solar cell. The different strategies for increasing light harvesting and charge collection, inhibiting charge losses due to recombination phenomena, are reviewed thoroughly, highlighting the benefits of proper photoanode preparation, and its crucial role in the development of high efficiency dye sensitized and quantum dot sensitized solar cells.

  • quasi one dimensional Metal Oxide Semiconductors preparation characterization and application as chemical sensors
    Progress in Materials Science, 2009
    Co-Authors: Elisabetta Comini, Alberto Vomiero, C Baratto, G Faglia, M Ferroni, G Sberveglieri
    Abstract:

    Abstract The continuous evolution of nanotechnology in these years led to the production of quasi-one dimensional (Q1D) structures in a variety of morphologies such as nanowires, core–shell nanowires, nanotubes, nanobelts, hierarchical structures, nanorods, nanorings. In particular, Metal Oxides (MOX) are attracting an increasing interest for both fundamental and applied science. MOX Q1D are crystalline structures with well-defined chemical composition, surface terminations, free from dislocation and other extended defects. In addition, nanowires may exhibit physical properties which are significantly different from their coarse-grained polycrystalline counterpart because of their nanosized dimensions. Surface effects dominate due to the increase of their specific surface, which leads to the enhancement of the surface related properties, such as catalytic activity or surface adsorption: key properties for superior chemical sensors production. High degree of crystallinity and atomic sharp terminations make nanowires very promising for the development of a new generation of gas sensors reducing instabilities, typical in polycrystalline systems, associated with grain coalescence and drift in electrical properties. These sensitive nanocrystals may be used as resistors, and in FET based or optical based gas sensors. This article presents an up-to-date review of Q1D Metal Oxide materials research for gas sensors application, due to the great research effort in the field it could not cover all the interesting works reported, the ones that, according to the authors, are going to contribute to this field’s further development were selected and described.