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V. I. Talanin - One of the best experts on this subject based on the ideXlab platform.
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The New Software for Research and the Modelling of Grown-in Microdefects in Dislocation-Free Silicon Single Crystals
Engineering and Applied Sciences, 2018Co-Authors: V. I. Talanin, I. E. Talanin, Vladislav Igorevich LashkoAbstract:As a virtual experimental device for research and the modelling of grown-in Microdefects formation in dislocation-free silicon single crystals the software is proposed. The software is built on the basis on diffusion model of grown-in Microdefects formation and allows the use of computer to investigate the defect structure of silicon monocrystals with a diameter up to 400 mm.
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The Diffusion Model of Grown-In Microdefects Formation During Crystallization of Dislocation-Free Silicon Single Crystals
Advances in Crystallization Processes, 2012Co-Authors: V. I. Talanin, I. E. TalaninAbstract:Grown-in Microdefects degrade the electronic properties of microdevices fabricated on silicon wafers. Optimizing the number and size of grown-in Microdefects is crucial to improving processing yield of microelectronic devices. Many of the advances in integratedcircuit manufacturing achieved in recent years would not have been possible without parallel advances in silicon-crystal quality and defect engineering (Yang et al., 2009). The problem of defect formation in dislocation-free silicon single crystals during their growth is a fundamental problem of physics and chemistry of silicon. In particular it is the key to solving the problem engineering applications of silicon crystals. This is connected with the transformation grown-in Microdefects during the technological treatment of silicon monocrystals.
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Formation of Microdefects in semiconductor silicon
Crystallography Reports, 2004Co-Authors: V. I. Talanin, I. E. Talanin, D. I. LevinzonAbstract:The distribution patterns and physical nature (the sign of the lattice strain) of growth Microdefects in dislocation-free Si single crystals grown by the floating-zone and Czochralski methods were studied by selective etching and transmission electron microscopy. Mechanisms of formation and transformation of growth Microdefects, depending on the crystal growth rate, are proposed. A heterogeneous mechanism of formation of Microdefects is considered.
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Physical nature of grown-in Microdefects in Czochralski-grown silicon and their transformation during various technological effects
Physica Status Solidi (a), 2003Co-Authors: V. I. Talanin, I. E. TalaninAbstract:Czochralski-grown dislocation-free silicon crystals of 50 and 80 mm in diameter have been extensively studied by techniques of transmission electron microscopy and preferential etching. Crystals were grown at various growth rates, followed by subsequent processing (thermal treatment, ion implantation). The physical nature (positive/negative sign of silicon lattice imperfection) of grown-in Microdefects inside and within the OSF ring was determined. It was found that background oxygen and carbon impurities mostly affect the formation mechanism of grown-in Microdefects. It was shown that crystals might grow in interstitial and interstitial–vacancy regimes. The transformation scheme of the grown-in Microdefects in the course of subsequent processing is clarified. (© 2003 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
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Microdefects formation in dislocation-free float-zone and Czochralski silicon single crystals
2003Co-Authors: V. I. Talanin, I. E. TalaninAbstract:Basing upon complex researches of monocrystals FZ-Si, a mechanism of microdefect formation is confirmed.It is established that the formation of Microdefects happens by two mechanisms: vacancy and interstitial ones. The comparison of the data on CZ-Si and FZ-Si shows that this mechanism can be applied to CZ-Si with allowance for a modification of growth conditions and is significant for a larger content of impurities.
I. E. Talanin - One of the best experts on this subject based on the ideXlab platform.
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The New Software for Research and the Modelling of Grown-in Microdefects in Dislocation-Free Silicon Single Crystals
Engineering and Applied Sciences, 2018Co-Authors: V. I. Talanin, I. E. Talanin, Vladislav Igorevich LashkoAbstract:As a virtual experimental device for research and the modelling of grown-in Microdefects formation in dislocation-free silicon single crystals the software is proposed. The software is built on the basis on diffusion model of grown-in Microdefects formation and allows the use of computer to investigate the defect structure of silicon monocrystals with a diameter up to 400 mm.
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The Diffusion Model of Grown-In Microdefects Formation During Crystallization of Dislocation-Free Silicon Single Crystals
Advances in Crystallization Processes, 2012Co-Authors: V. I. Talanin, I. E. TalaninAbstract:Grown-in Microdefects degrade the electronic properties of microdevices fabricated on silicon wafers. Optimizing the number and size of grown-in Microdefects is crucial to improving processing yield of microelectronic devices. Many of the advances in integratedcircuit manufacturing achieved in recent years would not have been possible without parallel advances in silicon-crystal quality and defect engineering (Yang et al., 2009). The problem of defect formation in dislocation-free silicon single crystals during their growth is a fundamental problem of physics and chemistry of silicon. In particular it is the key to solving the problem engineering applications of silicon crystals. This is connected with the transformation grown-in Microdefects during the technological treatment of silicon monocrystals.
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Formation of Microdefects in semiconductor silicon
Crystallography Reports, 2004Co-Authors: V. I. Talanin, I. E. Talanin, D. I. LevinzonAbstract:The distribution patterns and physical nature (the sign of the lattice strain) of growth Microdefects in dislocation-free Si single crystals grown by the floating-zone and Czochralski methods were studied by selective etching and transmission electron microscopy. Mechanisms of formation and transformation of growth Microdefects, depending on the crystal growth rate, are proposed. A heterogeneous mechanism of formation of Microdefects is considered.
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Physical nature of grown-in Microdefects in Czochralski-grown silicon and their transformation during various technological effects
Physica Status Solidi (a), 2003Co-Authors: V. I. Talanin, I. E. TalaninAbstract:Czochralski-grown dislocation-free silicon crystals of 50 and 80 mm in diameter have been extensively studied by techniques of transmission electron microscopy and preferential etching. Crystals were grown at various growth rates, followed by subsequent processing (thermal treatment, ion implantation). The physical nature (positive/negative sign of silicon lattice imperfection) of grown-in Microdefects inside and within the OSF ring was determined. It was found that background oxygen and carbon impurities mostly affect the formation mechanism of grown-in Microdefects. It was shown that crystals might grow in interstitial and interstitial–vacancy regimes. The transformation scheme of the grown-in Microdefects in the course of subsequent processing is clarified. (© 2003 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
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Microdefects formation in dislocation-free float-zone and Czochralski silicon single crystals
2003Co-Authors: V. I. Talanin, I. E. TalaninAbstract:Basing upon complex researches of monocrystals FZ-Si, a mechanism of microdefect formation is confirmed.It is established that the formation of Microdefects happens by two mechanisms: vacancy and interstitial ones. The comparison of the data on CZ-Si and FZ-Si shows that this mechanism can be applied to CZ-Si with allowance for a modification of growth conditions and is significant for a larger content of impurities.
A. M. Eidenzon - One of the best experts on this subject based on the ideXlab platform.
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Vacancy-related Microdefects responsible for the formation of oxidation-induced stacking faults with ring-shaped distribution (R-OSFs) in Czochralski-grown Si
Semiconductor Science and Technology, 1997Co-Authors: N. I. Puzanov, A. M. EidenzonAbstract:Thermal oxidation of large-sized Si wafers often results in the formation of a ring-shaped distribution of oxidation-induced stacking faults (the so-called R-OSF). A related phenomenon is the formation of annular bands of reduced oxygen precipitation in Si wafers heat-treated around . It is generally thought that these microdefect patterns are due to a local excess in self-interstitials established in growing crystals. Recently we have reported a model describing the formation of R-OSFs, which includes the premise that the grown-in vacancy-related Microdefects ( defects) serve as nucleation centres for R-OSFs. The R-OSFs are found to emerge in those regions where the concentration of low-temperature centres for oxygen precipitation is locally reduced as a consequence of vacancy depletion. Here we report experiments that allow the determination of point-defect species involved in the formation of R-OSF nucleation centres during crystal growth. The selective interaction of {221}/{221} twin boundaries with native point defects is used for discriminating vacancies and self-interstitials. Dislocation-free Si tetracrystals grown under conditions that ensure transitions from the self-interstitial to vacancy defects are examined. The etching features of the {221}/{221} twin boundaries, which separate tetracrystals into four grains, differ between the vacancy and interstitial regions. The type and distribution of grown-in and thermally induced Microdefects as well as the etching patterns developing at the twin boundaries suggest that it is vacancies rather than self-interstitials that are responsible for the formation of R-OSF nucleation centres in growing crystals.
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Modelling microdefect distribution in dislocation-free Si crystals grown from the melt
Journal of Crystal Growth, 1997Co-Authors: N. I. Puzanov, A. M. Eidenzon, Dmitrii N. PuzanovAbstract:Abstract Various Microdefects formed as a result of the condensation of native point defects and impurities are known to be present in dislocation-free melt-grown Si crystals. Here we report the results of computer modelling of the distribution of Microdefects in the Czochralski (CZ) crystal growth of silicon. Our approach is based on the main assumptions of the Voronkov theory. We use the values of axial temperature gradient and cooling rate measured during crystal growth. The numerical calculations quantitatively reproduce experimental data such as the transition between the vacancy and interstitial Microdefects when the pulling rate is changed passing through a critical value, the size and shape of the regions of interstitial (A and B) defects and vacancy-related A′ defects, the position and shape of the defect-free zone in Si crystals 8–16 cm in diameter. From fits of the calculations to the observed microdefect patterns, the activation energy for point-defect migration was estimated to be 1.3 eV (for temperatures from melting point to 1273 K). We show how to evaluate the radial distribution of axial temperature gradient near the growth interface from the actual microdefect patterns revealed in Si crystals.
B V Sheludchenko - One of the best experts on this subject based on the ideXlab platform.
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x ray diffraction characterization of Microdefects in silicon crystals after high energy electron irradiation
Physica Status Solidi (a), 2011Co-Authors: V. B. Molodkin, Ye. M. Kyslovskyy, T. P. Vladimirova, S. I. Olikhovskii, E. V. Kochelab, E G Len, B V Sheludchenko, S V Lizunova, O V Reshetnyk, V V DovganyukAbstract:The quantitative characterization of complex microdefect structures in silicon crystals grown by Czochralski method and irradiated with various doses of high-energy electrons (18 MeV) has been performed by methods of the high-resolution X-ray diffraction. The concentrations and average sizes of dislocation loops and oxygen precipitates have been determined by using the combined treatment of reciprocal space maps and rocking curves based on the analytical formulas of the statistical dynamical theory of X-ray diffraction by imperfect crystals with randomly distributed Microdefects of several types.
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sensitivity of triple crystal x ray diffractometers to Microdefects in silicon
Physica Status Solidi (a), 2009Co-Authors: V. B. Molodkin, T. P. Vladimirova, S. I. Olikhovskii, E G Len, O V Reshetnyk, E. N. Kislovskii, V P Kladko, B V SheludchenkoAbstract:The dynamical theory, which describes both diffraction profiles and reciprocal space maps measured from imperfect crystals with account for instrumental factors of triple-crystal diffractometer (TCD), has been developed for adequate quantitative characterization of Microdefects. Analytical expressions for coherent and diffuse scattering (DS) intensities measured by TCD in the Bragg diffraction geometry have been derived by using the generalized statistical dynamical theory of X-ray scattering in real single crystals with randomly distributed defects. The DS intensity distributions from single crystals containing clusters and dislocation loops have been described by explicit analytical expressions. Particularly, these expressions take into account anisotropy of displacement fields around defects with discrete orientations. Characteristics of microdefect structures in silicon single crystals grown by Czochralsky- and float-zone methods have been determined by analyzing the measured TCD profiles and reciprocal space maps. The sensitivities of reciprocal space maps and diffraction profiles to defect characteristics have been compared.
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dynamical theoretical model of the high resolution double crystal x ray diffractometry of imperfect single crystals with Microdefects
Physical Review B, 2008Co-Authors: V. B. Molodkin, T. P. Vladimirova, S. I. Olikhovskii, R. F. Seredenko, E. N. Kislovskii, E S Skakunova, B V SheludchenkoAbstract:The dynamical diffraction model has been developed for the quantitative description of rocking curves (RCs) measured in the Bragg diffraction geometry from single crystals containing homogeneously distributed Microdefects of several types and with arbitrary sizes. The analytical expressions for coherent and diffuse RC components, which take self-consistently multiple-scattering effects into account and depend explicitly on microdefect characteristics (radius, concentration, strength, etc.), have been derived with taking into account the instrumental factors. The developed model has been applied to determine the characteristics of oxygen precipitates and dislocation loops in silicon crystals grown by Czochralsky and float-zone methods using RCs measured by the high-resolution double-crystal x-ray diffractometer. It has been shown, particularly, that completely dynamical consideration of Huang as well as Stockes-Wilson diffuse scattering (DS) in both diffuse RC component and coefficient of extinction of coherent RC component due to DS, together with taking asymmetry and thermal DS effects into account, provides the possibility to distinguish contributions into RC from defects of different types, which have equal or commensurable effective radii.
V. B. Molodkin - One of the best experts on this subject based on the ideXlab platform.
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x ray diffraction characterization of Microdefects in silicon crystals after high energy electron irradiation
Physica Status Solidi (a), 2011Co-Authors: V. B. Molodkin, Ye. M. Kyslovskyy, T. P. Vladimirova, S. I. Olikhovskii, E. V. Kochelab, E G Len, B V Sheludchenko, S V Lizunova, O V Reshetnyk, V V DovganyukAbstract:The quantitative characterization of complex microdefect structures in silicon crystals grown by Czochralski method and irradiated with various doses of high-energy electrons (18 MeV) has been performed by methods of the high-resolution X-ray diffraction. The concentrations and average sizes of dislocation loops and oxygen precipitates have been determined by using the combined treatment of reciprocal space maps and rocking curves based on the analytical formulas of the statistical dynamical theory of X-ray diffraction by imperfect crystals with randomly distributed Microdefects of several types.
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sensitivity of triple crystal x ray diffractometers to Microdefects in silicon
Physica Status Solidi (a), 2009Co-Authors: V. B. Molodkin, T. P. Vladimirova, S. I. Olikhovskii, E G Len, O V Reshetnyk, E. N. Kislovskii, V P Kladko, B V SheludchenkoAbstract:The dynamical theory, which describes both diffraction profiles and reciprocal space maps measured from imperfect crystals with account for instrumental factors of triple-crystal diffractometer (TCD), has been developed for adequate quantitative characterization of Microdefects. Analytical expressions for coherent and diffuse scattering (DS) intensities measured by TCD in the Bragg diffraction geometry have been derived by using the generalized statistical dynamical theory of X-ray scattering in real single crystals with randomly distributed defects. The DS intensity distributions from single crystals containing clusters and dislocation loops have been described by explicit analytical expressions. Particularly, these expressions take into account anisotropy of displacement fields around defects with discrete orientations. Characteristics of microdefect structures in silicon single crystals grown by Czochralsky- and float-zone methods have been determined by analyzing the measured TCD profiles and reciprocal space maps. The sensitivities of reciprocal space maps and diffraction profiles to defect characteristics have been compared.
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dynamical theoretical model of the high resolution double crystal x ray diffractometry of imperfect single crystals with Microdefects
Physical Review B, 2008Co-Authors: V. B. Molodkin, T. P. Vladimirova, S. I. Olikhovskii, R. F. Seredenko, E. N. Kislovskii, E S Skakunova, B V SheludchenkoAbstract:The dynamical diffraction model has been developed for the quantitative description of rocking curves (RCs) measured in the Bragg diffraction geometry from single crystals containing homogeneously distributed Microdefects of several types and with arbitrary sizes. The analytical expressions for coherent and diffuse RC components, which take self-consistently multiple-scattering effects into account and depend explicitly on microdefect characteristics (radius, concentration, strength, etc.), have been derived with taking into account the instrumental factors. The developed model has been applied to determine the characteristics of oxygen precipitates and dislocation loops in silicon crystals grown by Czochralsky and float-zone methods using RCs measured by the high-resolution double-crystal x-ray diffractometer. It has been shown, particularly, that completely dynamical consideration of Huang as well as Stockes-Wilson diffuse scattering (DS) in both diffuse RC component and coefficient of extinction of coherent RC component due to DS, together with taking asymmetry and thermal DS effects into account, provides the possibility to distinguish contributions into RC from defects of different types, which have equal or commensurable effective radii.
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Evolution of the microdefect structure in silicon on isothermal annealing as determined by X-ray diffractometry
physica status solidi (a), 2007Co-Authors: Ye. M. Kyslovskyy, T. P. Vladimirova, S. I. Olikhovskii, V. B. Molodkin, E. V. Kochelab, R. F. SeredenkoAbstract:The dynamical theory of X-ray diffraction by imperfect crystals with randomly distributed Microdefects, applicable to double-crystal diffractometry (DCD), has been extended to account for the simultaneous presence of several types of Microdefects. The obtained formulae for coherent and diffuse components of the rocking curve (RC) have been applied to the quantitative characterization of the complex microdefect structure in silicon samples annealed at 750 °C for various time intervals by using high-resolution double-crystal X-ray diffraction measurements. Time dependencies of concentrations and average sizes of oxygen precipitates and dislocation loops have been determined by using characterization results.
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bragg diffraction of x rays by single crystals with large Microdefects
Physica Status Solidi B-basic Solid State Physics, 2002Co-Authors: E. N. Kislovskii, S. I. Olikhovskii, V. B. Molodkin, E G Len, V. Nemoshkalenko, V.p. Krivitsky, E. V. Pervak, Gene E. Ice, B. C. LarsonAbstract:Dynamical wave fields formed in imperfect single crystals by diffusely scattered waves have been considered in the two-beam case of diffraction for the homogeneous distribution of Microdefects with large sizes. Wave vectors of the constituent plane waves include the complex dispersion corrections accounting for multiple diffuse scattering processes. The corresponding dynamical diffuse scattering amplitudes and cross-sections in vacuum have been derived for both reflection and transmission directions. The diffuse component of crystal reflectivity has been calculated in the approximation of semiinfinite crystal and has been integrated over exit angles for two microdefect types: spherical clusters and prismatic dislocation loops. The obtained formula for the diffuse reflectivity has been analyzed and compared with the known kinematical one.