The Experts below are selected from a list of 192 Experts worldwide ranked by ideXlab platform

M Otsuki - One of the best experts on this subject based on the ideXlab platform.

  • trench shielded gate concept for improved switching performance with the low Miller Capacitance
    International Symposium on Power Semiconductor Devices and IC's, 2016
    Co-Authors: M Sawada, Yuichi Onozawa, K Ohi, Y Ikura, M Otsuki, Y Nabetani
    Abstract:

    This paper presents the new gate structure concept in trench gate IGBTs in order to have extended performance in faster switching without penalties on the on-state voltage drop (Von). The combination of the trench gate and adjacent emitter-connected trench achieves the dramatic Miller Capacitance reduction while maintaining the enough Injection Enhancement (IE) effect. The experimental demonstration achieved as much as 37% of reduction in the total switching loss.

  • ultra low Miller Capacitance trench gate igbt with the split gate structure
    International Symposium on Power Semiconductor Devices and IC's, 2015
    Co-Authors: K Ohi, Yuichi Onozawa, Y Ikura, A Yoshimoto, K Sugimura, H Takahashi, M Otsuki
    Abstract:

    This paper presents a newly developed trench gate IGBT which utilizes the split gate structure. It can realize both low Miller Capacitance and high Injection Enhancement (IE) effect. The Miller Capacitance has been reduced to 1/10 compared to that of the general trench gate structure with floating p-base. As a result, the turn-on power dissipation has been reduced by about 10% under the same turn-on di/dt and high recovery dV/dt controllability has also been achieved because of its lower gate-collector coupling. The trade-off relationship between the on-state voltage drop and the turn-off power dissipation has been improved by about 15% compared to the conventional IGBT.

Yuichi Onozawa - One of the best experts on this subject based on the ideXlab platform.

  • trench shielded gate concept for improved switching performance with the low Miller Capacitance
    International Symposium on Power Semiconductor Devices and IC's, 2016
    Co-Authors: M Sawada, Yuichi Onozawa, K Ohi, Y Ikura, M Otsuki, Y Nabetani
    Abstract:

    This paper presents the new gate structure concept in trench gate IGBTs in order to have extended performance in faster switching without penalties on the on-state voltage drop (Von). The combination of the trench gate and adjacent emitter-connected trench achieves the dramatic Miller Capacitance reduction while maintaining the enough Injection Enhancement (IE) effect. The experimental demonstration achieved as much as 37% of reduction in the total switching loss.

  • ultra low Miller Capacitance trench gate igbt with the split gate structure
    International Symposium on Power Semiconductor Devices and IC's, 2015
    Co-Authors: K Ohi, Yuichi Onozawa, Y Ikura, A Yoshimoto, K Sugimura, H Takahashi, M Otsuki
    Abstract:

    This paper presents a newly developed trench gate IGBT which utilizes the split gate structure. It can realize both low Miller Capacitance and high Injection Enhancement (IE) effect. The Miller Capacitance has been reduced to 1/10 compared to that of the general trench gate structure with floating p-base. As a result, the turn-on power dissipation has been reduced by about 10% under the same turn-on di/dt and high recovery dV/dt controllability has also been achieved because of its lower gate-collector coupling. The trade-off relationship between the on-state voltage drop and the turn-off power dissipation has been improved by about 15% compared to the conventional IGBT.

  • A New Fin p-Body Insulated Gate Bipolar Transistor With Low Miller Capacitance
    IEEE Electron Device Letters, 2015
    Co-Authors: Hao Feng, Yuichi Onozawa, Takashi Yoshimura, Wentao Yang, Akira Tamenori
    Abstract:

    A new fin p-body insulated gate bipolar transistor (Fin-p IGBT) is designed and experimentally demonstrated. The device features wide trenches and spacer gates, which is implemented using a simple and low-cost process. Compared with the conventional floating p-body IGBT, the fabricated Fin-p IGBT is able to achieve remarkable reduction in both Miller Capacitance (-60% at VCE of 15 V) and gate charge (-46%).

Shupeng Chen - One of the best experts on this subject based on the ideXlab platform.

  • Design and Investigation of the Junction-Less TFET with Ge/Si0.3Ge0.7/Si Heterojunction and Heterogeneous Gate Dielectric
    MDPI AG, 2019
    Co-Authors: Tao Han, Hongxia Liu, Shulong Wang, Shupeng Chen, Xiaoli Yang, Ming Cai, Kun Yang
    Abstract:

    To improve the on-state current and reduce the Miller Capacitance of the conventional junction-less tunneling field effect transistor (JLTFET), the junction-less TFET with Ge/Si0.3Ge0.7/Si heterojunction and heterogeneous gate dielectric (H-JLTFET) is investigated by the Technology Computer Aided Design (TCAD) simulation in this paper. The source region uses the narrow bandgap semiconductor material germanium to obtain the higher on-state current; the gate dielectric adjacent to the drain region adopts the low-k dielectric material SiO2, which is considered to reduce the gate-to-drain Capacitance effectively. Moreover, the gap region uses the Si0.3Ge0.7 material to decrease the tunneling distance. In addition, the effects of the device sizes, doping concentration and work function on the performance of the H-JLTFET are analyzed systematically. The optimal on-state current and switching ratio of the H-JLTFET can reach 6 µA/µm and 2.6 × 1012, which are one order of magnitude and four orders of magnitude larger than the conventional JLTFET, respectively. Meanwhile, the gate-to-drain Capacitance, off-state current and power consumption of the H-JLTFET can be effectively suppressed, so it will have a great potential in future ultra-low power integrated circuit applications

  • reduced Miller Capacitance in u shaped channel tunneling fet by introducing heterogeneous gate dielectric
    IEEE Electron Device Letters, 2017
    Co-Authors: Hongxia Liu, Shulong Wang, Shupeng Chen
    Abstract:

    In this letter, a novel U-shaped channel tunneling FET (UTFET) with heterogeneous gate dielectric (HG-UTFET) is designed to reduce the Miller Capacitance ( $\text{C}_{\mathrm {\mathbf {M}}}$ ) and to improve the performance of TFET digital circuits. Because the HG-UTFET and UTFET have the same gate dielectric near the source region, these two devices nearly have the same on-state current. But due to the smaller gate-to-drain Capacitance ( $\text{C}_{\textit {gd}}$ ) caused by the low- ${k}$ gate dielectric near the drain region, the HG-UTFET has smaller $\text{C}_{\mathrm {M}}$ compared with UTFET, which will enhance the switching performance of digital circuits. The simulation results reveal that the overshoot/undershoot and rising/falling delay of the output signal in the HG-UTFET inverter are reduced a lot compared with the UTFET inverter. Results show that the $\text{C}_{\mathrm {M}}$ and falling delay of the HG-UTFET inverter are ~45.6% and ~30.7% less than that of the UTFET inverter, respectively. Therefore, by the application of HG-UTFET, the switching performance of inverter can be enhanced a lot.

K Ohi - One of the best experts on this subject based on the ideXlab platform.

  • trench shielded gate concept for improved switching performance with the low Miller Capacitance
    International Symposium on Power Semiconductor Devices and IC's, 2016
    Co-Authors: M Sawada, Yuichi Onozawa, K Ohi, Y Ikura, M Otsuki, Y Nabetani
    Abstract:

    This paper presents the new gate structure concept in trench gate IGBTs in order to have extended performance in faster switching without penalties on the on-state voltage drop (Von). The combination of the trench gate and adjacent emitter-connected trench achieves the dramatic Miller Capacitance reduction while maintaining the enough Injection Enhancement (IE) effect. The experimental demonstration achieved as much as 37% of reduction in the total switching loss.

  • ultra low Miller Capacitance trench gate igbt with the split gate structure
    International Symposium on Power Semiconductor Devices and IC's, 2015
    Co-Authors: K Ohi, Yuichi Onozawa, Y Ikura, A Yoshimoto, K Sugimura, H Takahashi, M Otsuki
    Abstract:

    This paper presents a newly developed trench gate IGBT which utilizes the split gate structure. It can realize both low Miller Capacitance and high Injection Enhancement (IE) effect. The Miller Capacitance has been reduced to 1/10 compared to that of the general trench gate structure with floating p-base. As a result, the turn-on power dissipation has been reduced by about 10% under the same turn-on di/dt and high recovery dV/dt controllability has also been achieved because of its lower gate-collector coupling. The trade-off relationship between the on-state voltage drop and the turn-off power dissipation has been improved by about 15% compared to the conventional IGBT.

Y Ikura - One of the best experts on this subject based on the ideXlab platform.

  • trench shielded gate concept for improved switching performance with the low Miller Capacitance
    International Symposium on Power Semiconductor Devices and IC's, 2016
    Co-Authors: M Sawada, Yuichi Onozawa, K Ohi, Y Ikura, M Otsuki, Y Nabetani
    Abstract:

    This paper presents the new gate structure concept in trench gate IGBTs in order to have extended performance in faster switching without penalties on the on-state voltage drop (Von). The combination of the trench gate and adjacent emitter-connected trench achieves the dramatic Miller Capacitance reduction while maintaining the enough Injection Enhancement (IE) effect. The experimental demonstration achieved as much as 37% of reduction in the total switching loss.

  • ultra low Miller Capacitance trench gate igbt with the split gate structure
    International Symposium on Power Semiconductor Devices and IC's, 2015
    Co-Authors: K Ohi, Yuichi Onozawa, Y Ikura, A Yoshimoto, K Sugimura, H Takahashi, M Otsuki
    Abstract:

    This paper presents a newly developed trench gate IGBT which utilizes the split gate structure. It can realize both low Miller Capacitance and high Injection Enhancement (IE) effect. The Miller Capacitance has been reduced to 1/10 compared to that of the general trench gate structure with floating p-base. As a result, the turn-on power dissipation has been reduced by about 10% under the same turn-on di/dt and high recovery dV/dt controllability has also been achieved because of its lower gate-collector coupling. The trade-off relationship between the on-state voltage drop and the turn-off power dissipation has been improved by about 15% compared to the conventional IGBT.