The Experts below are selected from a list of 90084 Experts worldwide ranked by ideXlab platform
Myunghan Yoon - One of the best experts on this subject based on the ideXlab platform.
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correction large area printed low voltage organic thin film transistors via Minimal Solution bar coating
Journal of Materials Chemistry C, 2021Co-Authors: Sujin Sung, Wonjune Lee, Marcia M Payne, John E Anthony, Changhyun Kim, Myunghan YoonAbstract:Correction for ‘Large-area printed low-voltage organic thin film transistors via Minimal-Solution bar-coating’ by Sujin Sung et al., J. Mater. Chem. C, 2020, 8, 15112–15118, DOI: 10.1039/D0TC03089A.
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large area printed low voltage organic thin film transistors via Minimal Solution bar coating
Journal of Materials Chemistry C, 2020Co-Authors: Sujin Sung, Wonjune Lee, Marcia M Payne, John E Anthony, Changhyun Kim, Myunghan YoonAbstract:Herein, we report on the fabrication of large-area printed low-voltage organic thin film transistor arrays via Minimal-Solution bar-coating. We established the bar-coating of the chemically cross-linked polymer dielectric based on poly(4-vinylphenol) and 4,4′-(hexafluoroisopropylidene)diphthalic anhydride by investigating the effects of composition, reaction and printing conditions on film thickness, cross-linking efficacy, and dielectric properties. Subsequently, we elucidated various aspects of large-area (up to 4-inch wafer) bar-coated cross-linked polymeric dielectric prepared from Minimal Solution (∼100 μL, ∼1.2 μL cm−2) by addressing film uniformity, thickness control, capacitance variation, underlying step coverage, patternability, etc. The resultant polymeric dielectric exhibited good insulating properties as exemplified by a low leakage current density of ∼10−8 A cm−2 (at 1 MV cm−1) and a high areal capacitance of 42.6 nF cm−2. Finally, a highly-crystallized organic semiconductor layer based on 2,8-difluorinated 5,11-bis(triethylsilylethynyl)anthradithiophene was deposited on the bar-coated cross-linked polymeric dielectric via bar-coating, leading to the realization of printed low-voltage organic transistor arrays with minimum ink Solution wasted.
Sujin Sung - One of the best experts on this subject based on the ideXlab platform.
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correction large area printed low voltage organic thin film transistors via Minimal Solution bar coating
Journal of Materials Chemistry C, 2021Co-Authors: Sujin Sung, Wonjune Lee, Marcia M Payne, John E Anthony, Changhyun Kim, Myunghan YoonAbstract:Correction for ‘Large-area printed low-voltage organic thin film transistors via Minimal-Solution bar-coating’ by Sujin Sung et al., J. Mater. Chem. C, 2020, 8, 15112–15118, DOI: 10.1039/D0TC03089A.
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large area printed low voltage organic thin film transistors via Minimal Solution bar coating
Journal of Materials Chemistry C, 2020Co-Authors: Sujin Sung, Wonjune Lee, Marcia M Payne, John E Anthony, Changhyun Kim, Myunghan YoonAbstract:Herein, we report on the fabrication of large-area printed low-voltage organic thin film transistor arrays via Minimal-Solution bar-coating. We established the bar-coating of the chemically cross-linked polymer dielectric based on poly(4-vinylphenol) and 4,4′-(hexafluoroisopropylidene)diphthalic anhydride by investigating the effects of composition, reaction and printing conditions on film thickness, cross-linking efficacy, and dielectric properties. Subsequently, we elucidated various aspects of large-area (up to 4-inch wafer) bar-coated cross-linked polymeric dielectric prepared from Minimal Solution (∼100 μL, ∼1.2 μL cm−2) by addressing film uniformity, thickness control, capacitance variation, underlying step coverage, patternability, etc. The resultant polymeric dielectric exhibited good insulating properties as exemplified by a low leakage current density of ∼10−8 A cm−2 (at 1 MV cm−1) and a high areal capacitance of 42.6 nF cm−2. Finally, a highly-crystallized organic semiconductor layer based on 2,8-difluorinated 5,11-bis(triethylsilylethynyl)anthradithiophene was deposited on the bar-coated cross-linked polymeric dielectric via bar-coating, leading to the realization of printed low-voltage organic transistor arrays with minimum ink Solution wasted.
Changhyun Kim - One of the best experts on this subject based on the ideXlab platform.
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correction large area printed low voltage organic thin film transistors via Minimal Solution bar coating
Journal of Materials Chemistry C, 2021Co-Authors: Sujin Sung, Wonjune Lee, Marcia M Payne, John E Anthony, Changhyun Kim, Myunghan YoonAbstract:Correction for ‘Large-area printed low-voltage organic thin film transistors via Minimal-Solution bar-coating’ by Sujin Sung et al., J. Mater. Chem. C, 2020, 8, 15112–15118, DOI: 10.1039/D0TC03089A.
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large area printed low voltage organic thin film transistors via Minimal Solution bar coating
Journal of Materials Chemistry C, 2020Co-Authors: Sujin Sung, Wonjune Lee, Marcia M Payne, John E Anthony, Changhyun Kim, Myunghan YoonAbstract:Herein, we report on the fabrication of large-area printed low-voltage organic thin film transistor arrays via Minimal-Solution bar-coating. We established the bar-coating of the chemically cross-linked polymer dielectric based on poly(4-vinylphenol) and 4,4′-(hexafluoroisopropylidene)diphthalic anhydride by investigating the effects of composition, reaction and printing conditions on film thickness, cross-linking efficacy, and dielectric properties. Subsequently, we elucidated various aspects of large-area (up to 4-inch wafer) bar-coated cross-linked polymeric dielectric prepared from Minimal Solution (∼100 μL, ∼1.2 μL cm−2) by addressing film uniformity, thickness control, capacitance variation, underlying step coverage, patternability, etc. The resultant polymeric dielectric exhibited good insulating properties as exemplified by a low leakage current density of ∼10−8 A cm−2 (at 1 MV cm−1) and a high areal capacitance of 42.6 nF cm−2. Finally, a highly-crystallized organic semiconductor layer based on 2,8-difluorinated 5,11-bis(triethylsilylethynyl)anthradithiophene was deposited on the bar-coated cross-linked polymeric dielectric via bar-coating, leading to the realization of printed low-voltage organic transistor arrays with minimum ink Solution wasted.
John E Anthony - One of the best experts on this subject based on the ideXlab platform.
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correction large area printed low voltage organic thin film transistors via Minimal Solution bar coating
Journal of Materials Chemistry C, 2021Co-Authors: Sujin Sung, Wonjune Lee, Marcia M Payne, John E Anthony, Changhyun Kim, Myunghan YoonAbstract:Correction for ‘Large-area printed low-voltage organic thin film transistors via Minimal-Solution bar-coating’ by Sujin Sung et al., J. Mater. Chem. C, 2020, 8, 15112–15118, DOI: 10.1039/D0TC03089A.
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large area printed low voltage organic thin film transistors via Minimal Solution bar coating
Journal of Materials Chemistry C, 2020Co-Authors: Sujin Sung, Wonjune Lee, Marcia M Payne, John E Anthony, Changhyun Kim, Myunghan YoonAbstract:Herein, we report on the fabrication of large-area printed low-voltage organic thin film transistor arrays via Minimal-Solution bar-coating. We established the bar-coating of the chemically cross-linked polymer dielectric based on poly(4-vinylphenol) and 4,4′-(hexafluoroisopropylidene)diphthalic anhydride by investigating the effects of composition, reaction and printing conditions on film thickness, cross-linking efficacy, and dielectric properties. Subsequently, we elucidated various aspects of large-area (up to 4-inch wafer) bar-coated cross-linked polymeric dielectric prepared from Minimal Solution (∼100 μL, ∼1.2 μL cm−2) by addressing film uniformity, thickness control, capacitance variation, underlying step coverage, patternability, etc. The resultant polymeric dielectric exhibited good insulating properties as exemplified by a low leakage current density of ∼10−8 A cm−2 (at 1 MV cm−1) and a high areal capacitance of 42.6 nF cm−2. Finally, a highly-crystallized organic semiconductor layer based on 2,8-difluorinated 5,11-bis(triethylsilylethynyl)anthradithiophene was deposited on the bar-coated cross-linked polymeric dielectric via bar-coating, leading to the realization of printed low-voltage organic transistor arrays with minimum ink Solution wasted.
Marcia M Payne - One of the best experts on this subject based on the ideXlab platform.
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correction large area printed low voltage organic thin film transistors via Minimal Solution bar coating
Journal of Materials Chemistry C, 2021Co-Authors: Sujin Sung, Wonjune Lee, Marcia M Payne, John E Anthony, Changhyun Kim, Myunghan YoonAbstract:Correction for ‘Large-area printed low-voltage organic thin film transistors via Minimal-Solution bar-coating’ by Sujin Sung et al., J. Mater. Chem. C, 2020, 8, 15112–15118, DOI: 10.1039/D0TC03089A.
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large area printed low voltage organic thin film transistors via Minimal Solution bar coating
Journal of Materials Chemistry C, 2020Co-Authors: Sujin Sung, Wonjune Lee, Marcia M Payne, John E Anthony, Changhyun Kim, Myunghan YoonAbstract:Herein, we report on the fabrication of large-area printed low-voltage organic thin film transistor arrays via Minimal-Solution bar-coating. We established the bar-coating of the chemically cross-linked polymer dielectric based on poly(4-vinylphenol) and 4,4′-(hexafluoroisopropylidene)diphthalic anhydride by investigating the effects of composition, reaction and printing conditions on film thickness, cross-linking efficacy, and dielectric properties. Subsequently, we elucidated various aspects of large-area (up to 4-inch wafer) bar-coated cross-linked polymeric dielectric prepared from Minimal Solution (∼100 μL, ∼1.2 μL cm−2) by addressing film uniformity, thickness control, capacitance variation, underlying step coverage, patternability, etc. The resultant polymeric dielectric exhibited good insulating properties as exemplified by a low leakage current density of ∼10−8 A cm−2 (at 1 MV cm−1) and a high areal capacitance of 42.6 nF cm−2. Finally, a highly-crystallized organic semiconductor layer based on 2,8-difluorinated 5,11-bis(triethylsilylethynyl)anthradithiophene was deposited on the bar-coated cross-linked polymeric dielectric via bar-coating, leading to the realization of printed low-voltage organic transistor arrays with minimum ink Solution wasted.
