The Experts below are selected from a list of 186 Experts worldwide ranked by ideXlab platform
Zhong Lin Wang - One of the best experts on this subject based on the ideXlab platform.
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piezotronic effect on the sensitivity and signal level of schottky contacted proactive micro Nanowire nanosensors
ACS Nano, 2013Co-Authors: Ruomeng Yu, Zhong Lin WangAbstract:We demonstrated the first piezoelectric effect on the performance of a pH sensor using an MSM back-to-back Schottky contacted ZnO micro/Nanowire Device. When the Device is subjected to an external strain, a piezopotential is created in the micro/Nanowire, which tunes the effective heights of the Schottky barriers at the local contacts, consequently increasing the sensitivity and signal level of the sensors. Furthermore, the strain-produced piezopotential along the ZnO micro/Nanowire will lead to a nonuniform distribution of the target molecules near the micro/Nanowire surface owing to electrostatic interaction, which will make the sensor proactive to detect the target molecules even at extremely low overall concentration, which naturally improves the sensitivity and lowers the detection limit. A theoretical model is proposed to explain the observed performance of the sensor using the energy band diagram. This prototype Device offers a new concept for designing supersensitive and fast-response micro/nanowi...
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designing the electric transport characteristics of zno micro Nanowire Devices by coupling piezoelectric and photoexcitation effects
ACS Nano, 2010Co-Authors: Yanling Chang, Peng Fei, Robert L Snyder, Zhong Lin WangAbstract:The localized coupling between piezoelectric and photoexcitation effects of a ZnO micro/Nanowire Device has been studied for the first time with the goal of designing and controlling the electrical transport characteristics of the Device. The piezoelectric effect tends to raise the height of the local Schottky barrier (SB) at the metal−ZnO contact, while photoexcitation using a light that has energy higher than the band gap of ZnO lowers the SB height. By tuning the relative contributions of the effects from piezoelectricity via strain and photoexcitation via light intensity, the local contact can be tuned step-by-step and/or transformed from Schottky to Ohmic or from Ohmic to Schottky. This study describes a new principle for controlling the coupling among mechanical, photonic, and electrical properties of ZnO Nanowires, which could be potentially useful for fabricating piezo-phototronic Devices.
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Designing the electric transport characteristics of ZnO micro/Nanowire Devices by coupling piezoelectric and photoexcitation effects.
ACS nano, 2010Co-Authors: Yanling Chang, Peng Fei, Robert L Snyder, Zhong Lin WangAbstract:The localized coupling between piezoelectric and photoexcitation effects of a ZnO micro/Nanowire Device has been studied for the first time with the goal of designing and controlling the electrical transport characteristics of the Device. The piezoelectric effect tends to raise the height of the local Schottky barrier (SB) at the metal−ZnO contact, while photoexcitation using a light that has energy higher than the band gap of ZnO lowers the SB height. By tuning the relative contributions of the effects from piezoelectricity via strain and photoexcitation via light intensity, the local contact can be tuned step-by-step and/or transformed from Schottky to Ohmic or from Ohmic to Schottky. This study describes a new principle for controlling the coupling among mechanical, photonic, and electrical properties of ZnO Nanowires, which could be potentially useful for fabricating piezo-phototronic Devices.
Yanling Chang - One of the best experts on this subject based on the ideXlab platform.
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designing the electric transport characteristics of zno micro Nanowire Devices by coupling piezoelectric and photoexcitation effects
ACS Nano, 2010Co-Authors: Yanling Chang, Peng Fei, Robert L Snyder, Zhong Lin WangAbstract:The localized coupling between piezoelectric and photoexcitation effects of a ZnO micro/Nanowire Device has been studied for the first time with the goal of designing and controlling the electrical transport characteristics of the Device. The piezoelectric effect tends to raise the height of the local Schottky barrier (SB) at the metal−ZnO contact, while photoexcitation using a light that has energy higher than the band gap of ZnO lowers the SB height. By tuning the relative contributions of the effects from piezoelectricity via strain and photoexcitation via light intensity, the local contact can be tuned step-by-step and/or transformed from Schottky to Ohmic or from Ohmic to Schottky. This study describes a new principle for controlling the coupling among mechanical, photonic, and electrical properties of ZnO Nanowires, which could be potentially useful for fabricating piezo-phototronic Devices.
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Designing the electric transport characteristics of ZnO micro/Nanowire Devices by coupling piezoelectric and photoexcitation effects.
ACS nano, 2010Co-Authors: Yanling Chang, Peng Fei, Robert L Snyder, Zhong Lin WangAbstract:The localized coupling between piezoelectric and photoexcitation effects of a ZnO micro/Nanowire Device has been studied for the first time with the goal of designing and controlling the electrical transport characteristics of the Device. The piezoelectric effect tends to raise the height of the local Schottky barrier (SB) at the metal−ZnO contact, while photoexcitation using a light that has energy higher than the band gap of ZnO lowers the SB height. By tuning the relative contributions of the effects from piezoelectricity via strain and photoexcitation via light intensity, the local contact can be tuned step-by-step and/or transformed from Schottky to Ohmic or from Ohmic to Schottky. This study describes a new principle for controlling the coupling among mechanical, photonic, and electrical properties of ZnO Nanowires, which could be potentially useful for fabricating piezo-phototronic Devices.
Peng Fei - One of the best experts on this subject based on the ideXlab platform.
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designing the electric transport characteristics of zno micro Nanowire Devices by coupling piezoelectric and photoexcitation effects
ACS Nano, 2010Co-Authors: Yanling Chang, Peng Fei, Robert L Snyder, Zhong Lin WangAbstract:The localized coupling between piezoelectric and photoexcitation effects of a ZnO micro/Nanowire Device has been studied for the first time with the goal of designing and controlling the electrical transport characteristics of the Device. The piezoelectric effect tends to raise the height of the local Schottky barrier (SB) at the metal−ZnO contact, while photoexcitation using a light that has energy higher than the band gap of ZnO lowers the SB height. By tuning the relative contributions of the effects from piezoelectricity via strain and photoexcitation via light intensity, the local contact can be tuned step-by-step and/or transformed from Schottky to Ohmic or from Ohmic to Schottky. This study describes a new principle for controlling the coupling among mechanical, photonic, and electrical properties of ZnO Nanowires, which could be potentially useful for fabricating piezo-phototronic Devices.
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Designing the electric transport characteristics of ZnO micro/Nanowire Devices by coupling piezoelectric and photoexcitation effects.
ACS nano, 2010Co-Authors: Yanling Chang, Peng Fei, Robert L Snyder, Zhong Lin WangAbstract:The localized coupling between piezoelectric and photoexcitation effects of a ZnO micro/Nanowire Device has been studied for the first time with the goal of designing and controlling the electrical transport characteristics of the Device. The piezoelectric effect tends to raise the height of the local Schottky barrier (SB) at the metal−ZnO contact, while photoexcitation using a light that has energy higher than the band gap of ZnO lowers the SB height. By tuning the relative contributions of the effects from piezoelectricity via strain and photoexcitation via light intensity, the local contact can be tuned step-by-step and/or transformed from Schottky to Ohmic or from Ohmic to Schottky. This study describes a new principle for controlling the coupling among mechanical, photonic, and electrical properties of ZnO Nanowires, which could be potentially useful for fabricating piezo-phototronic Devices.
Robert L Snyder - One of the best experts on this subject based on the ideXlab platform.
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designing the electric transport characteristics of zno micro Nanowire Devices by coupling piezoelectric and photoexcitation effects
ACS Nano, 2010Co-Authors: Yanling Chang, Peng Fei, Robert L Snyder, Zhong Lin WangAbstract:The localized coupling between piezoelectric and photoexcitation effects of a ZnO micro/Nanowire Device has been studied for the first time with the goal of designing and controlling the electrical transport characteristics of the Device. The piezoelectric effect tends to raise the height of the local Schottky barrier (SB) at the metal−ZnO contact, while photoexcitation using a light that has energy higher than the band gap of ZnO lowers the SB height. By tuning the relative contributions of the effects from piezoelectricity via strain and photoexcitation via light intensity, the local contact can be tuned step-by-step and/or transformed from Schottky to Ohmic or from Ohmic to Schottky. This study describes a new principle for controlling the coupling among mechanical, photonic, and electrical properties of ZnO Nanowires, which could be potentially useful for fabricating piezo-phototronic Devices.
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Designing the electric transport characteristics of ZnO micro/Nanowire Devices by coupling piezoelectric and photoexcitation effects.
ACS nano, 2010Co-Authors: Yanling Chang, Peng Fei, Robert L Snyder, Zhong Lin WangAbstract:The localized coupling between piezoelectric and photoexcitation effects of a ZnO micro/Nanowire Device has been studied for the first time with the goal of designing and controlling the electrical transport characteristics of the Device. The piezoelectric effect tends to raise the height of the local Schottky barrier (SB) at the metal−ZnO contact, while photoexcitation using a light that has energy higher than the band gap of ZnO lowers the SB height. By tuning the relative contributions of the effects from piezoelectricity via strain and photoexcitation via light intensity, the local contact can be tuned step-by-step and/or transformed from Schottky to Ohmic or from Ohmic to Schottky. This study describes a new principle for controlling the coupling among mechanical, photonic, and electrical properties of ZnO Nanowires, which could be potentially useful for fabricating piezo-phototronic Devices.
Ning Kang - One of the best experts on this subject based on the ideXlab platform.
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Crossover from Coulomb blockade to ballistic transport in InAs Nanowire Devices.
Nanotechnology, 2018Co-Authors: Lu Wang, Guang-yao Huang, Dong Pan, Jianhua Zhao, Ning KangAbstract:We report on the observation of a crossover from the single electron Coulomb blockade regime to the ballistic transport in individual InAs semiconducting Nanowire Devices. The InAs Nanowires studied here were grown by molecular-beam epitaxy (MBE), which provides a clean system to study the intrinsic electrons transport in a quasi-one-dimensional system. Quantized conductance plateaus are observed for an InAs Nanowire-based Device by changing the Fermi level with a global back gate at low temperature, suggesting the ballistic transport of electrons. Further lowering the temperature, we observe the Coulomb blockade phenomenon with the formation of the quantum dot between the two normal metal contacts. By increasing the electron density, the characteristic Fabry-Perot oscillations are observed, which further provides evidence for the ballistic nature of transport in the InAs Nanowire Device. Our observations indicate that high-quality InAs Nanowires grown by MBE behave as clean quantum wires at low temperatures, which enables us to investigate novel phenomena in the quasi-one-dimensional system.
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Ballistic transport and quantum interference in InSb Nanowire Devices
Chinese Physics B, 2017Co-Authors: Guang-yao Huang, Jing-kun Guo, Ning Kang, Philippe CaroffAbstract:An experimental realization of a ballistic superconductor proximitized semiconductor Nanowire Device is a necessary step towards engineering topological quantum electronics. Here, we report on ballistic transport in InSb Nanowires grown by molecular-beam epitaxy contacted by superconductor electrodes. At an elevated temperature, clear conductance plateaus are observed at zero magnetic field and in agreement with calculations based on the Landauer formula. At lower temperature, we have observed characteristic Fabry–Perot patterns which confirm the ballistic nature of charge transport. Furthermore, the magnetoconductance measurements in the ballistic regime reveal a periodic variation related to the Fabry–Perot oscillations. The result can be reasonably explained by taking into account the impact of magnetic field on the phase of ballistic electron's wave function, which is further verified by our simulation. Our results pave the way for better understanding of the quantum interference effects on the transport properties of InSb Nanowires in the ballistic regime as well as developing of novel Device for topological quantum computations.
