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Jiahong Huang - One of the best experts on this subject based on the ideXlab platform.
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effect of Nitrogen Flow Rate on properties of nanostructured tizrn thin films produced by radio frequency magnetron sputtering
Thin Solid Films, 2010Co-Authors: Yuwei Lin, Jiahong HuangAbstract:Abstract The effect of Nitrogen Flow Rate on structure and properties of (Ti,Zr)N thin films was investigated in the study. Two types of (Ti,Zr)N thin films were found with different Nitrogen Flow Rates, one is the single-phase solid solution of (Ti,Zr)N that appeared for Nitrogen Flow Rates of 2–7 sccm, the other one is the phase of both (Ti,Zr)N and TiZr mixture for the lower Nitrogen Flow Rates of 1 sccm. The grain size of the films was also determined by X-ray diffraction, and the size was less than 20 nm. The (Ti,Zr)N films show excellent hardness ranging from 35.5 to 37.5 GPa with exhibiting (111) preferred orientation.
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effect of Nitrogen Flow Rate on the structure and mechanical properties of zrn thin films on si 1 0 0 and stainless steel substRates
Materials Chemistry and Physics, 2007Co-Authors: Jiahong HuangAbstract:Abstract Nanocrystalline ZrN films were successfully deposited on Si(1 0 0) and AISI 304 stainless steel substRates using hollow cathode discharge ion-plating (HCD-IP). The effect of Nitrogen Flow Rate (ranging from 5 to 35 sccm) was investigated on the N/Zr ratio, structure, and mechanical properties of the ZrN films. The results showed that the variation of Nitrogen Flow Rate did not significantly affect the film thickness, preferred orientation and hardness. The major effects of the Nitrogen Flow Rate were on the N/Zr ratio, packing factor, and grain size of the ZrN films. The N/Zr ratio increased (0.6–0.9) with increasing Nitrogen Flow Rate. The grain sizes of the ZrN films, measured by both X-ray diffraction (XRD) and scanning electron microscopy (SEM), ranging from 15 to 30 nm, generally increased with increasing Nitrogen Flow Rate. The hardness of the nanocrystalline ZrN films, ranging from 23.3 to 26.6 GPa, was not related to the variation of the residual stress. The deformation mechanism of the nanocrystalline ZrN films may be through grain rotation or grain boundary sliding instead of slip by dislocations. Since the electric conductivity of 304 stainless steel is higher than that of Si, the stainless steel substRate can attract more Zr ions than Si substRate. This led to larger deposition Rate, roughness, and residual stress for the ZrN film deposited on stainless steel than on Si substRate.
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effect of Nitrogen Flow Rate on structure and properties of nanocrystalline tin thin films produced by unbalanced magnetron sputtering
Surface & Coatings Technology, 2005Co-Authors: Jiahong Huang, Kiangwee LauAbstract:Abstract Nanocrystalline TiN thin films were deposited on (100) silicon wafers using an unbalanced magnetron (UBM) sputtering system. The structure and properties of the TiN thin films were studied under single-variable experimental condition by varying Nitrogen Flow Rate ranging from 0.25 to 1.75 sccm. The grain size of the films was determined by X-ray diffraction (XRD), and the size was less than 7 nm. The images of transmission electron microscopy (TEM), scanning electron microscopy (SEM) and atomic force microscopy (AFM) also showed a nanometer-size grain structure of the TiN thin films. The N/Ti ratio increased (N/Ti=0.4–1.1) while the deposition Rate decreased with increasing Nitrogen Flow Rate. The preferred orientation changed from (111) to (200), then back to (111) as the Nitrogen Flow Rate increased. There was no significant variation in the film hardness with Nitrogen Flow Rate or preferred orientation. It is noted that the film hardness was high, ranging from 23.4 to 27.6 GPa, even for the film thickness down to 140 nm. The resistivity decreased with increasing packing factor. Ti/TiN nano-composite was found in the films with N/Ti ratio below 0.6.
Daniel H C Chua - One of the best experts on this subject based on the ideXlab platform.
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the effect of deposition conditions on the properties of tin thin films prepared by filtered cathodic vacuum arc technique
Surface & Coatings Technology, 1999Co-Authors: H Yang, Daniel H C ChuaAbstract:Abstract Thin TiN films were deposited at ambient temperature on silicon substRates using the filtered cathodic vacuum-arc technique. The Nitrogen Flow Rate, deposition Rate and substRate bias were varied systematically to investigate their effect on the mechanical and structural properties of the films. It was found that an increase in the Nitrogen Flow Rate results in an increased hardness, surface roughness and grain size. The increased ion bombardment due to the higher amount of Nitrogen ions makes film nucleation favourable on the denser (111) orientation. An increase in deposition Rate results in an increase of stress, hardness and surface roughness. This is due to the increase in the momentum transfer resulting in film densification. Increasing the negative substRate bias decreases both the film stress and the hardness, which can be attributed to ion-induced stress-relief behaviour at higher momentum-energy transfer. The results demonstRate the dominant influence of ion-energy flux on the properties of the films.
H W Guo - One of the best experts on this subject based on the ideXlab platform.
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cyclic voltammetric behavior of Nitrogen doped tetrahedral amorphous carbon films deposited by filtered cathodic vacuum arc
Electroanalysis, 2008Co-Authors: N W Khun, Erjia Liu, H W GuoAbstract:Nitrogen-doped tetrahedral amorphous carbon (ta-C : N) films were deposited by filtered cathodic vacuum arc (FCVA) technique using Nitrogen as a background gas. The structure of the ta-C : N films was studied with X-ray photoelectron spectroscopy (XPS) and Raman spectroscopy in terms of Nitrogen Flow Rate used during the film deposition. Potential windows of the films measured in deaeRated and unstirred solutions, such as 0.5 M HCl, 0.1 M KCl, 0.1 M NaCl, 0.1 M KOH, and 0.1 M NaOH, were about 2.4, 2.32, 3.2, 3.1, and 3.25 V, respectively. This study showed that the potential windows of the ta-C : N films were also affected by Nitrogen Flow Rate. The ta-C : N films used in this study had the desired voltammetric characteristics suitable for electrochemical analysis.
Jinhyo Boo - One of the best experts on this subject based on the ideXlab platform.
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a study on the characteristics of tioxny thin films with various Nitrogen Flow Rate by pecvd method
Current Applied Physics, 2012Co-Authors: Suyeon Cho, C K Jung, Jinhyo BooAbstract:Abstract TiOxNy thin films were deposited on Si(100) substRates at 500 °C using RF PECVD system. Titanium isopropoxide was used as precursor with different Nitrogen Flow Rate to control Nitrogen contents in the films. Changes of chemical states of constituent elements in the deposited films were examined by X-ray photoelectron spectroscopy (XPS) analysis. The data showed that the Nitrogen content ratio was increased with increasing Nitrogen Flow Rate, also the binding energy shift toward high energy side. The characteristics of film growth orientation and structure as well as morphology were also analyzed by X-ray diffraction (XRD), transmission electron diffraction (TED), transmission electron microscopy (TEM), and scanning electron microscopy (SEM). The film growth orientation, structure, and morphology were changed by increasing Nitrogen Flow Rate. Nano-indentation experiments showed strong dependency on the composition of Nitrogen and nano-structure in the hardness range of between 8 and 16 GPa.
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a study on the characteristics of plasma polymer thin film with controlled Nitrogen Flow Rate
Nanoscale Research Letters, 2012Co-Authors: Sangjin Cho, Jinhyo BooAbstract:Nitrogen-doped thiophene plasma polymer [N-ThioPP] thin films were deposited by radio frequency (13.56 MHz) plasma-enhanced chemical vapor deposition method. Thiophene was used as organic precursor (carbon source) with hydrogen gas as the precursor bubbler gas. Additionally, Nitrogen gas [N2] was used as Nitrogen dopant. Furthermore, additional argon was used as a carrier gas. The as-grown polymerized thin films were analyzed using ellipsometry, Fourier-transform infrared [FT-IR] spectroscopy, Raman spectroscopy, and water contact angle measurement. The ellipsometry results showed the refractive index change of the N-ThioPP film. The FT-IR spectra showed that the N-ThioPP films were completely fragmented and polymerized from thiophene.
H Yang - One of the best experts on this subject based on the ideXlab platform.
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the effect of deposition conditions on the properties of tin thin films prepared by filtered cathodic vacuum arc technique
Surface & Coatings Technology, 1999Co-Authors: H Yang, Daniel H C ChuaAbstract:Abstract Thin TiN films were deposited at ambient temperature on silicon substRates using the filtered cathodic vacuum-arc technique. The Nitrogen Flow Rate, deposition Rate and substRate bias were varied systematically to investigate their effect on the mechanical and structural properties of the films. It was found that an increase in the Nitrogen Flow Rate results in an increased hardness, surface roughness and grain size. The increased ion bombardment due to the higher amount of Nitrogen ions makes film nucleation favourable on the denser (111) orientation. An increase in deposition Rate results in an increase of stress, hardness and surface roughness. This is due to the increase in the momentum transfer resulting in film densification. Increasing the negative substRate bias decreases both the film stress and the hardness, which can be attributed to ion-induced stress-relief behaviour at higher momentum-energy transfer. The results demonstRate the dominant influence of ion-energy flux on the properties of the films.