The Experts below are selected from a list of 37848 Experts worldwide ranked by ideXlab platform
Manh Anh Do - One of the best experts on this subject based on the ideXlab platform.
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A wideband low power low-Noise Amplifier in CMOS technology
IEEE Transactions on Circuits and Systems I: Regular Papers, 2010Co-Authors: Ali Meaamar, Kiat-seng Yeo, Chirn Chye Boon, Manh Anh DoAbstract:A T-coil network can be implemented as a high order filter for bandwidth extension. This technique is incorporated into the design of the input matching and output peaking networks of a low-Noise Amplifier. The intrinsic capacitances within the transistors are exploited as a part of the wideband structure to extend the bandwidth. Using the proposed topology, a wideband low-Noise Amplifier with a bandwidth of 3-8 GHz, a maximum gain of 16.4 dB and Noise figure of 2.9 dB (min) is achieved. The total power consumption of the wideband low-Noise Amplifier from the 1.8 V power supply is 3.9 mW. The prototype is fabricated in 0.18 ??m CMOS technology.
Ali Meaamar - One of the best experts on this subject based on the ideXlab platform.
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A wideband low power low-Noise Amplifier in CMOS technology
IEEE Transactions on Circuits and Systems I: Regular Papers, 2010Co-Authors: Ali Meaamar, Kiat-seng Yeo, Chirn Chye Boon, Manh Anh DoAbstract:A T-coil network can be implemented as a high order filter for bandwidth extension. This technique is incorporated into the design of the input matching and output peaking networks of a low-Noise Amplifier. The intrinsic capacitances within the transistors are exploited as a part of the wideband structure to extend the bandwidth. Using the proposed topology, a wideband low-Noise Amplifier with a bandwidth of 3-8 GHz, a maximum gain of 16.4 dB and Noise figure of 2.9 dB (min) is achieved. The total power consumption of the wideband low-Noise Amplifier from the 1.8 V power supply is 3.9 mW. The prototype is fabricated in 0.18 ??m CMOS technology.
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A Wideband Low Power Low-Noise Amplifier in
2010Co-Authors: Ali Meaamar, Kiat-seng Yeo, Chirn Chye Boon, Manh AnhAbstract:A T-coil network can be implemented as a high order filter for bandwidth extension. This technique is incorporated into the design of the input matching and output peaking networks of a low-Noise Amplifier. The intrinsic capacitances within the tran- sistors are exploited as a part of the wideband structure to extend the bandwidth. Using the proposed topology, a wideband low-Noise Amplifierwithabandwidthof3-8GHz,amaximumgainof16.4dB and Noise figure of 2.9 dB (min) is achieved. The total power con- sumptionofthewidebandlow-NoiseAmplifierfromthe1.8Vpower supply is 3.9 mW. The prototype is fabricated in 0.18 m CMOS technology. Index Terms—T-coil network, feedback, bandwidth extension, gain-flatness, center-tap inductor, wideband low-Noise Amplifier (LNA).
Kiat-seng Yeo - One of the best experts on this subject based on the ideXlab platform.
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A wideband low power low-Noise Amplifier in CMOS technology
IEEE Transactions on Circuits and Systems I: Regular Papers, 2010Co-Authors: Ali Meaamar, Kiat-seng Yeo, Chirn Chye Boon, Manh Anh DoAbstract:A T-coil network can be implemented as a high order filter for bandwidth extension. This technique is incorporated into the design of the input matching and output peaking networks of a low-Noise Amplifier. The intrinsic capacitances within the transistors are exploited as a part of the wideband structure to extend the bandwidth. Using the proposed topology, a wideband low-Noise Amplifier with a bandwidth of 3-8 GHz, a maximum gain of 16.4 dB and Noise figure of 2.9 dB (min) is achieved. The total power consumption of the wideband low-Noise Amplifier from the 1.8 V power supply is 3.9 mW. The prototype is fabricated in 0.18 ??m CMOS technology.
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A Wideband Low Power Low-Noise Amplifier in
2010Co-Authors: Ali Meaamar, Kiat-seng Yeo, Chirn Chye Boon, Manh AnhAbstract:A T-coil network can be implemented as a high order filter for bandwidth extension. This technique is incorporated into the design of the input matching and output peaking networks of a low-Noise Amplifier. The intrinsic capacitances within the tran- sistors are exploited as a part of the wideband structure to extend the bandwidth. Using the proposed topology, a wideband low-Noise Amplifierwithabandwidthof3-8GHz,amaximumgainof16.4dB and Noise figure of 2.9 dB (min) is achieved. The total power con- sumptionofthewidebandlow-NoiseAmplifierfromthe1.8Vpower supply is 3.9 mW. The prototype is fabricated in 0.18 m CMOS technology. Index Terms—T-coil network, feedback, bandwidth extension, gain-flatness, center-tap inductor, wideband low-Noise Amplifier (LNA).
Chirn Chye Boon - One of the best experts on this subject based on the ideXlab platform.
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A wideband low power low-Noise Amplifier in CMOS technology
IEEE Transactions on Circuits and Systems I: Regular Papers, 2010Co-Authors: Ali Meaamar, Kiat-seng Yeo, Chirn Chye Boon, Manh Anh DoAbstract:A T-coil network can be implemented as a high order filter for bandwidth extension. This technique is incorporated into the design of the input matching and output peaking networks of a low-Noise Amplifier. The intrinsic capacitances within the transistors are exploited as a part of the wideband structure to extend the bandwidth. Using the proposed topology, a wideband low-Noise Amplifier with a bandwidth of 3-8 GHz, a maximum gain of 16.4 dB and Noise figure of 2.9 dB (min) is achieved. The total power consumption of the wideband low-Noise Amplifier from the 1.8 V power supply is 3.9 mW. The prototype is fabricated in 0.18 ??m CMOS technology.
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A Wideband Low Power Low-Noise Amplifier in
2010Co-Authors: Ali Meaamar, Kiat-seng Yeo, Chirn Chye Boon, Manh AnhAbstract:A T-coil network can be implemented as a high order filter for bandwidth extension. This technique is incorporated into the design of the input matching and output peaking networks of a low-Noise Amplifier. The intrinsic capacitances within the tran- sistors are exploited as a part of the wideband structure to extend the bandwidth. Using the proposed topology, a wideband low-Noise Amplifierwithabandwidthof3-8GHz,amaximumgainof16.4dB and Noise figure of 2.9 dB (min) is achieved. The total power con- sumptionofthewidebandlow-NoiseAmplifierfromthe1.8Vpower supply is 3.9 mW. The prototype is fabricated in 0.18 m CMOS technology. Index Terms—T-coil network, feedback, bandwidth extension, gain-flatness, center-tap inductor, wideband low-Noise Amplifier (LNA).
Yue Ping Zhang - One of the best experts on this subject based on the ideXlab platform.
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Alternative approach to low‐Noise Amplifier design for ultra‐wideband applications
International Journal of RF and Microwave Computer-Aided Engineering, 2007Co-Authors: Yue Ping ZhangAbstract:Conventional ultra-wideband low-Noise Amplifiers require a flat gain over the entire 3.1–10.6 GHz bandwidth, which severely restraints the trade-off spaces in low Noise Amplifier design. This article proposes a relaxed gain-flatness requirement based on system level investigations. Considering the wireless transceiver front-end with antenna and propagation channel, the unflat-gain low-Noise Amplifier with an incremental gain characteristic does not degrade the performance of overall system. As an alternative to its flat-gain counterpart, the proposed unflat gain requirement tolerates gain ripple as large as 10 dB, which greatly eases the design challenges to low-Noise Amplifier for ultra-wideband wireless receivers. Two low-Noise Amplifier examples are given to demonstrate the feasibility and design flexibility under the proposed gain-flatness requirement. © 2007 Wiley Periodicals, Inc. Int J RF and Microwave CAE, 2007.
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Alternative approach to low-Noise Amplifier design for ultra-wideband applications: Research Articles
International Journal of RF and Microwave Computer-Aided Engineering, 2007Co-Authors: Yue Ping ZhangAbstract:Conventional ultra-wideband low-Noise Amplifiers require a flat gain over the entire 3.1–10.6 GHz bandwidth, which severely restraints the trade-off spaces in low Noise Amplifier design. This article proposes a relaxed gain-flatness requirement based on system level investigations. Considering the wireless transceiver front-end with antenna and propagation channel, the unflat-gain low-Noise Amplifier with an incremental gain characteristic does not degrade the performance of overall system. As an alternative to its flat-gain counterpart, the proposed unflat gain requirement tolerates gain ripple as large as 10 dB, which greatly eases the design challenges to low-Noise Amplifier for ultra-wideband wireless receivers. Two low-Noise Amplifier examples are given to demonstrate the feasibility and design flexibility under the proposed gain-flatness requirement. © 2007 Wiley Periodicals, Inc. Int J RF and Microwave CAE, 2007.
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Gain-flatness considerations on the ultra-wideband low-Noise Amplifier design
2005 Asia-Pacific Microwave Conference Proceedings, 1Co-Authors: Yue Ping Zhang, G. ZhengAbstract:Conventional ultra-wideband low-Noise Amplifiers require a flat gain over the entire 7.5-GHz bandwidth, which severely restricts the trade-off space for Noise and power requirements. This paper proposes a relaxed gain-flatness requirement based on system level investigations. Considering the wireless transceiver front-end with propagation channel characteristics, the unflat-gain low-Noise Amplifier with an incremental gain characteristic does not degrade the performance of overall system. As an alternative to its flat-gain counterpart, the proposed unflat gain requirement greatly eases the design challenges to low-Noise Amplifier for ultra-wideband wireless receivers.
