The Experts below are selected from a list of 72 Experts worldwide ranked by ideXlab platform
Maryam Shojaei Baghini - One of the best experts on this subject based on the ideXlab platform.
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design of a novel highly emi immune cmos miller opamp considering channel length modulation
IEEE Transactions on Circuits and Systems I-regular Papers, 2017Co-Authors: Subrahmanyam Boyapati, Jean-michel Redoute, Maryam Shojaei BaghiniAbstract:This paper presents a novel CMOS Miller operational amplifier (OpAmp) that has high immunity to electromagnetic interference (EMI). The proposed CMOS Miller OpAmp uses the replica concept with the source-buffered technique in order to achieve high EMI immunity across a wide range of frequencies (10 MHz to 1 GHz). The proposed amplifier is designed using the first-order quadratic mathematical model. The modeling includes the body effect and channel length modulation. The circuit has been fabricated using 0.18 $\mu \text{m}$ mixed-mode CMOS technology. Measurement results illustrate how the proposed Miller OpAmp reduces susceptibility to EMI even in the presence of high-amplitude interferences that are as high as 1 Vpp. Experimental results show that the maximum EMI-induced output offset voltage for the proposed Miller OpAmp is less than 10 mV over a wide range of frequencies (10 MHz to 1 GHz) when a 900 mVpp EMI signal is injected into the Noninverting Input. In contrast, the classic Miller OpAmp generates a maximum output offset voltage of 215 mV at 1 GHz under the same operating conditions. The measured results of the EMI-induced Input offset corroborates the circuit simulations.
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Design of A Novel Highly EMI-Immune CMOS Miller OpAmp Considering Channel Length Modulation
IEEE Transactions on Circuits and Systems I: Regular Papers, 2017Co-Authors: Subrahmanyam Boyapati, Jean-michel Redoute, Maryam Shojaei BaghiniAbstract:This paper presents a novel CMOS Miller operational amplifier (OpAmp) that has high immunity to electromagnetic interference (EMI). The proposed CMOS Miller OpAmp uses the replica concept with the source-buffered technique in order to achieve high EMI immunity across a wide range of frequencies (10 MHz to 1 GHz). The proposed amplifier is designed using the first-order quadratic mathematical model. The modeling includes the body effect and channel length modulation. The circuit has been fabricated using 0.18 μm mixed-mode CMOS technology. Measurement results illustrate how the proposed Miller OpAmp reduces susceptibility to EMI even in the presence of high-amplitude interferences that are as high as 1 Vpp. Experimental results show that the maximum EMI-induced output offset voltage for the proposed Miller OpAmp is less than 10 mV over a wide range of frequencies (10 MHz to 1 GHz) when a 900 mVpp EMI signal is injected into the Noninverting Input. In contrast, the classic Miller OpAmp generates a maximum output offset voltage of 215 mV at 1 GHz under the same operating conditions. The measured results of the EMI-induced Input offset corroborates the circuit simulations.
Jean-michel Redoute - One of the best experts on this subject based on the ideXlab platform.
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design of a novel highly emi immune cmos miller opamp considering channel length modulation
IEEE Transactions on Circuits and Systems I-regular Papers, 2017Co-Authors: Subrahmanyam Boyapati, Jean-michel Redoute, Maryam Shojaei BaghiniAbstract:This paper presents a novel CMOS Miller operational amplifier (OpAmp) that has high immunity to electromagnetic interference (EMI). The proposed CMOS Miller OpAmp uses the replica concept with the source-buffered technique in order to achieve high EMI immunity across a wide range of frequencies (10 MHz to 1 GHz). The proposed amplifier is designed using the first-order quadratic mathematical model. The modeling includes the body effect and channel length modulation. The circuit has been fabricated using 0.18 $\mu \text{m}$ mixed-mode CMOS technology. Measurement results illustrate how the proposed Miller OpAmp reduces susceptibility to EMI even in the presence of high-amplitude interferences that are as high as 1 Vpp. Experimental results show that the maximum EMI-induced output offset voltage for the proposed Miller OpAmp is less than 10 mV over a wide range of frequencies (10 MHz to 1 GHz) when a 900 mVpp EMI signal is injected into the Noninverting Input. In contrast, the classic Miller OpAmp generates a maximum output offset voltage of 215 mV at 1 GHz under the same operating conditions. The measured results of the EMI-induced Input offset corroborates the circuit simulations.
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Design of A Novel Highly EMI-Immune CMOS Miller OpAmp Considering Channel Length Modulation
IEEE Transactions on Circuits and Systems I: Regular Papers, 2017Co-Authors: Subrahmanyam Boyapati, Jean-michel Redoute, Maryam Shojaei BaghiniAbstract:This paper presents a novel CMOS Miller operational amplifier (OpAmp) that has high immunity to electromagnetic interference (EMI). The proposed CMOS Miller OpAmp uses the replica concept with the source-buffered technique in order to achieve high EMI immunity across a wide range of frequencies (10 MHz to 1 GHz). The proposed amplifier is designed using the first-order quadratic mathematical model. The modeling includes the body effect and channel length modulation. The circuit has been fabricated using 0.18 μm mixed-mode CMOS technology. Measurement results illustrate how the proposed Miller OpAmp reduces susceptibility to EMI even in the presence of high-amplitude interferences that are as high as 1 Vpp. Experimental results show that the maximum EMI-induced output offset voltage for the proposed Miller OpAmp is less than 10 mV over a wide range of frequencies (10 MHz to 1 GHz) when a 900 mVpp EMI signal is injected into the Noninverting Input. In contrast, the classic Miller OpAmp generates a maximum output offset voltage of 215 mV at 1 GHz under the same operating conditions. The measured results of the EMI-induced Input offset corroborates the circuit simulations.
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Increasing the EMI immunity of CMOS operational amplifiers using an on-chip common-mode cancellation circuit
2014 International Symposium on Electromagnetic Compatibility, 2014Co-Authors: Anna Richelli, Jean-michel RedouteAbstract:This paper presents an on-chip common-mode cancellation circuit which increases the common-mode rejection ratio (CMRR) in operational amplifiers, while at the same time increasing their immunity to electromagnetic interference (EMI). This common-mode cancellation circuit can be designed so as to double the differential gain while significantly reducing the common-mode gain. Simulations illustrate how the proposed amplifier exhibits an increased immunity to EMI injected in the opamp's Inputs. A case study example shows that the maximum output offset voltage which is obtained when an EMI amplitude of 1 V pp is injected in the Noninverting Input of a Miller amplifier connected as a voltage follower is equal to 50 mV and 200 mV with and without the common-mode cancellation structure respectively. Finally, simulations show that the common-mode deleting circuit is not overly sensitive to mismatch.
Subrahmanyam Boyapati - One of the best experts on this subject based on the ideXlab platform.
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design of a novel highly emi immune cmos miller opamp considering channel length modulation
IEEE Transactions on Circuits and Systems I-regular Papers, 2017Co-Authors: Subrahmanyam Boyapati, Jean-michel Redoute, Maryam Shojaei BaghiniAbstract:This paper presents a novel CMOS Miller operational amplifier (OpAmp) that has high immunity to electromagnetic interference (EMI). The proposed CMOS Miller OpAmp uses the replica concept with the source-buffered technique in order to achieve high EMI immunity across a wide range of frequencies (10 MHz to 1 GHz). The proposed amplifier is designed using the first-order quadratic mathematical model. The modeling includes the body effect and channel length modulation. The circuit has been fabricated using 0.18 $\mu \text{m}$ mixed-mode CMOS technology. Measurement results illustrate how the proposed Miller OpAmp reduces susceptibility to EMI even in the presence of high-amplitude interferences that are as high as 1 Vpp. Experimental results show that the maximum EMI-induced output offset voltage for the proposed Miller OpAmp is less than 10 mV over a wide range of frequencies (10 MHz to 1 GHz) when a 900 mVpp EMI signal is injected into the Noninverting Input. In contrast, the classic Miller OpAmp generates a maximum output offset voltage of 215 mV at 1 GHz under the same operating conditions. The measured results of the EMI-induced Input offset corroborates the circuit simulations.
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Design of A Novel Highly EMI-Immune CMOS Miller OpAmp Considering Channel Length Modulation
IEEE Transactions on Circuits and Systems I: Regular Papers, 2017Co-Authors: Subrahmanyam Boyapati, Jean-michel Redoute, Maryam Shojaei BaghiniAbstract:This paper presents a novel CMOS Miller operational amplifier (OpAmp) that has high immunity to electromagnetic interference (EMI). The proposed CMOS Miller OpAmp uses the replica concept with the source-buffered technique in order to achieve high EMI immunity across a wide range of frequencies (10 MHz to 1 GHz). The proposed amplifier is designed using the first-order quadratic mathematical model. The modeling includes the body effect and channel length modulation. The circuit has been fabricated using 0.18 μm mixed-mode CMOS technology. Measurement results illustrate how the proposed Miller OpAmp reduces susceptibility to EMI even in the presence of high-amplitude interferences that are as high as 1 Vpp. Experimental results show that the maximum EMI-induced output offset voltage for the proposed Miller OpAmp is less than 10 mV over a wide range of frequencies (10 MHz to 1 GHz) when a 900 mVpp EMI signal is injected into the Noninverting Input. In contrast, the classic Miller OpAmp generates a maximum output offset voltage of 215 mV at 1 GHz under the same operating conditions. The measured results of the EMI-induced Input offset corroborates the circuit simulations.
A Massarini - One of the best experts on this subject based on the ideXlab platform.
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feedforward control of dc dc pwm boost converter
IEEE Transactions on Circuits and Systems I-regular Papers, 1997Co-Authors: Marian K Kazimierczuk, A MassariniAbstract:A new feedforward control circuit suitable for applications in the dc-dc pulsewidth modulated (PWM) boost converter operated in the continuous conduction mode (CCM) is proposed. Its principle of operation is described, analyzed for steady state, and experimentally verified. The peak value of the sawtooth voltage at the Noninverting Input of a PWM modulator is held constant and the voltage at the inverting Input of the PWM modulator varies in proportion to the converter dc Input voltage. As a result, the complement of the on-duty cycle (1-D) is proportional to the dc converter Input voltage, yielding the converter output voltage theoretically independent of the converter Input voltage. The circuit is very simple and significantly improves line regulation of the output voltage. The measured open-loop line regulation at fixed loads was less than 5% for the converter dc Input voltage change by 400%. The load regulation was also good even without a negative feedback loop.
Marian K Kazimierczuk - One of the best experts on this subject based on the ideXlab platform.
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feedforward control of dc dc pwm boost converter
IEEE Transactions on Circuits and Systems I-regular Papers, 1997Co-Authors: Marian K Kazimierczuk, A MassariniAbstract:A new feedforward control circuit suitable for applications in the dc-dc pulsewidth modulated (PWM) boost converter operated in the continuous conduction mode (CCM) is proposed. Its principle of operation is described, analyzed for steady state, and experimentally verified. The peak value of the sawtooth voltage at the Noninverting Input of a PWM modulator is held constant and the voltage at the inverting Input of the PWM modulator varies in proportion to the converter dc Input voltage. As a result, the complement of the on-duty cycle (1-D) is proportional to the dc converter Input voltage, yielding the converter output voltage theoretically independent of the converter Input voltage. The circuit is very simple and significantly improves line regulation of the output voltage. The measured open-loop line regulation at fixed loads was less than 5% for the converter dc Input voltage change by 400%. The load regulation was also good even without a negative feedback loop.
