The Experts below are selected from a list of 3747 Experts worldwide ranked by ideXlab platform

Maryam Shojaei Baghini - One of the best experts on this subject based on the ideXlab platform.

  • design of a novel highly emi immune cmos miller opamp considering channel length modulation
    IEEE Transactions on Circuits and Systems I-regular Papers, 2017
    Co-Authors: Subrahmanyam Boyapati, Jean-michel Redoute, Maryam Shojaei Baghini
    Abstract:

    This paper presents a novel CMOS Miller operational amplifier (OpAmp) that has high immunity to electromagnetic interference (EMI). The proposed CMOS Miller OpAmp uses the replica concept with the source-buffered technique in order to achieve high EMI immunity across a wide range of frequencies (10 MHz to 1 GHz). The proposed amplifier is designed using the first-order quadratic mathematical model. The modeling includes the body effect and channel length modulation. The circuit has been fabricated using 0.18 $\mu \text{m}$ mixed-mode CMOS technology. Measurement results illustrate how the proposed Miller OpAmp reduces susceptibility to EMI even in the presence of high-amplitude interferences that are as high as 1 Vpp. Experimental results show that the maximum EMI-induced Output Offset Voltage for the proposed Miller OpAmp is less than 10 mV over a wide range of frequencies (10 MHz to 1 GHz) when a 900 mVpp EMI signal is injected into the noninverting input. In contrast, the classic Miller OpAmp generates a maximum Output Offset Voltage of 215 mV at 1 GHz under the same operating conditions. The measured results of the EMI-induced input Offset corroborates the circuit simulations.

  • Design of A Novel Highly EMI-Immune CMOS Miller OpAmp Considering Channel Length Modulation
    IEEE Transactions on Circuits and Systems I: Regular Papers, 2017
    Co-Authors: Subrahmanyam Boyapati, Jean-michel Redoute, Maryam Shojaei Baghini
    Abstract:

    This paper presents a novel CMOS Miller operational amplifier (OpAmp) that has high immunity to electromagnetic interference (EMI). The proposed CMOS Miller OpAmp uses the replica concept with the source-buffered technique in order to achieve high EMI immunity across a wide range of frequencies (10 MHz to 1 GHz). The proposed amplifier is designed using the first-order quadratic mathematical model. The modeling includes the body effect and channel length modulation. The circuit has been fabricated using 0.18 μm mixed-mode CMOS technology. Measurement results illustrate how the proposed Miller OpAmp reduces susceptibility to EMI even in the presence of high-amplitude interferences that are as high as 1 Vpp. Experimental results show that the maximum EMI-induced Output Offset Voltage for the proposed Miller OpAmp is less than 10 mV over a wide range of frequencies (10 MHz to 1 GHz) when a 900 mVpp EMI signal is injected into the noninverting input. In contrast, the classic Miller OpAmp generates a maximum Output Offset Voltage of 215 mV at 1 GHz under the same operating conditions. The measured results of the EMI-induced input Offset corroborates the circuit simulations.

Jean-michel Redoute - One of the best experts on this subject based on the ideXlab platform.

  • design of a novel highly emi immune cmos miller opamp considering channel length modulation
    IEEE Transactions on Circuits and Systems I-regular Papers, 2017
    Co-Authors: Subrahmanyam Boyapati, Jean-michel Redoute, Maryam Shojaei Baghini
    Abstract:

    This paper presents a novel CMOS Miller operational amplifier (OpAmp) that has high immunity to electromagnetic interference (EMI). The proposed CMOS Miller OpAmp uses the replica concept with the source-buffered technique in order to achieve high EMI immunity across a wide range of frequencies (10 MHz to 1 GHz). The proposed amplifier is designed using the first-order quadratic mathematical model. The modeling includes the body effect and channel length modulation. The circuit has been fabricated using 0.18 $\mu \text{m}$ mixed-mode CMOS technology. Measurement results illustrate how the proposed Miller OpAmp reduces susceptibility to EMI even in the presence of high-amplitude interferences that are as high as 1 Vpp. Experimental results show that the maximum EMI-induced Output Offset Voltage for the proposed Miller OpAmp is less than 10 mV over a wide range of frequencies (10 MHz to 1 GHz) when a 900 mVpp EMI signal is injected into the noninverting input. In contrast, the classic Miller OpAmp generates a maximum Output Offset Voltage of 215 mV at 1 GHz under the same operating conditions. The measured results of the EMI-induced input Offset corroborates the circuit simulations.

  • Design of A Novel Highly EMI-Immune CMOS Miller OpAmp Considering Channel Length Modulation
    IEEE Transactions on Circuits and Systems I: Regular Papers, 2017
    Co-Authors: Subrahmanyam Boyapati, Jean-michel Redoute, Maryam Shojaei Baghini
    Abstract:

    This paper presents a novel CMOS Miller operational amplifier (OpAmp) that has high immunity to electromagnetic interference (EMI). The proposed CMOS Miller OpAmp uses the replica concept with the source-buffered technique in order to achieve high EMI immunity across a wide range of frequencies (10 MHz to 1 GHz). The proposed amplifier is designed using the first-order quadratic mathematical model. The modeling includes the body effect and channel length modulation. The circuit has been fabricated using 0.18 μm mixed-mode CMOS technology. Measurement results illustrate how the proposed Miller OpAmp reduces susceptibility to EMI even in the presence of high-amplitude interferences that are as high as 1 Vpp. Experimental results show that the maximum EMI-induced Output Offset Voltage for the proposed Miller OpAmp is less than 10 mV over a wide range of frequencies (10 MHz to 1 GHz) when a 900 mVpp EMI signal is injected into the noninverting input. In contrast, the classic Miller OpAmp generates a maximum Output Offset Voltage of 215 mV at 1 GHz under the same operating conditions. The measured results of the EMI-induced input Offset corroborates the circuit simulations.

  • Increasing the EMI immunity of CMOS operational amplifiers using an on-chip common-mode cancellation circuit
    2014 International Symposium on Electromagnetic Compatibility, 2014
    Co-Authors: Anna Richelli, Jean-michel Redoute
    Abstract:

    This paper presents an on-chip common-mode cancellation circuit which increases the common-mode rejection ratio (CMRR) in operational amplifiers, while at the same time increasing their immunity to electromagnetic interference (EMI). This common-mode cancellation circuit can be designed so as to double the differential gain while significantly reducing the common-mode gain. Simulations illustrate how the proposed amplifier exhibits an increased immunity to EMI injected in the opamp's inputs. A case study example shows that the maximum Output Offset Voltage which is obtained when an EMI amplitude of 1 V pp is injected in the noninverting input of a Miller amplifier connected as a Voltage follower is equal to 50 mV and 200 mV with and without the common-mode cancellation structure respectively. Finally, simulations show that the common-mode deleting circuit is not overly sensitive to mismatch.

Subrahmanyam Boyapati - One of the best experts on this subject based on the ideXlab platform.

  • design of a novel highly emi immune cmos miller opamp considering channel length modulation
    IEEE Transactions on Circuits and Systems I-regular Papers, 2017
    Co-Authors: Subrahmanyam Boyapati, Jean-michel Redoute, Maryam Shojaei Baghini
    Abstract:

    This paper presents a novel CMOS Miller operational amplifier (OpAmp) that has high immunity to electromagnetic interference (EMI). The proposed CMOS Miller OpAmp uses the replica concept with the source-buffered technique in order to achieve high EMI immunity across a wide range of frequencies (10 MHz to 1 GHz). The proposed amplifier is designed using the first-order quadratic mathematical model. The modeling includes the body effect and channel length modulation. The circuit has been fabricated using 0.18 $\mu \text{m}$ mixed-mode CMOS technology. Measurement results illustrate how the proposed Miller OpAmp reduces susceptibility to EMI even in the presence of high-amplitude interferences that are as high as 1 Vpp. Experimental results show that the maximum EMI-induced Output Offset Voltage for the proposed Miller OpAmp is less than 10 mV over a wide range of frequencies (10 MHz to 1 GHz) when a 900 mVpp EMI signal is injected into the noninverting input. In contrast, the classic Miller OpAmp generates a maximum Output Offset Voltage of 215 mV at 1 GHz under the same operating conditions. The measured results of the EMI-induced input Offset corroborates the circuit simulations.

  • Design of A Novel Highly EMI-Immune CMOS Miller OpAmp Considering Channel Length Modulation
    IEEE Transactions on Circuits and Systems I: Regular Papers, 2017
    Co-Authors: Subrahmanyam Boyapati, Jean-michel Redoute, Maryam Shojaei Baghini
    Abstract:

    This paper presents a novel CMOS Miller operational amplifier (OpAmp) that has high immunity to electromagnetic interference (EMI). The proposed CMOS Miller OpAmp uses the replica concept with the source-buffered technique in order to achieve high EMI immunity across a wide range of frequencies (10 MHz to 1 GHz). The proposed amplifier is designed using the first-order quadratic mathematical model. The modeling includes the body effect and channel length modulation. The circuit has been fabricated using 0.18 μm mixed-mode CMOS technology. Measurement results illustrate how the proposed Miller OpAmp reduces susceptibility to EMI even in the presence of high-amplitude interferences that are as high as 1 Vpp. Experimental results show that the maximum EMI-induced Output Offset Voltage for the proposed Miller OpAmp is less than 10 mV over a wide range of frequencies (10 MHz to 1 GHz) when a 900 mVpp EMI signal is injected into the noninverting input. In contrast, the classic Miller OpAmp generates a maximum Output Offset Voltage of 215 mV at 1 GHz under the same operating conditions. The measured results of the EMI-induced input Offset corroborates the circuit simulations.

Redouté Jean-michel - One of the best experts on this subject based on the ideXlab platform.

  • A robust CMOS Miller OpAmp with High EMI-immunity
    'Institute of Electrical and Electronics Engineers (IEEE)', 2017
    Co-Authors: Boyapati S., Redouté Jean-michel, Baghini M. S.
    Abstract:

    peer reviewedThis paper presents a robust CMOS Miller operational amplifier (OpAmp) that has high immunity to electromagnetic interference (EMI). The proposed robust CMOS Miller operational amplifier uses the modified replica Miller OpAmp concept with the source-buffered Miller OpAmp with source degeneration resistance in order to achieve high EMI immunity across a wide range of frequencies (10 MHz to 1 GHz). Simulation results show that the maximum EMI-induced input Offset Voltage for the proposed robust CMOS Miller OpAmp is less than 5mV over a wide range of frequencies (10 MHz to 1GHz) when a 1 Vpp EMI signal is injected into the non-inverting input. In contrast, the classic Miller OpAmp generates a maximum Output Offset Voltage of 216 mV at 1GHz under the same operating conditions. © 2017 IEEE

  • Design of A Novel Highly EMI-Immune CMOS Miller OpAmp Considering Channel Length Modulation
    'Institute of Electrical and Electronics Engineers (IEEE)', 2017
    Co-Authors: Boyapati S., Redouté Jean-michel, Shojaei Baghini M.
    Abstract:

    peer reviewedThis paper presents a novel CMOS Miller operational amplifier (OpAmp) that has high immunity to electromagnetic interference (EMI). The proposed CMOS Miller OpAmp uses the replica concept with the source-buffered technique in order to achieve high EMI immunity across a wide range of frequencies (10 MHz to 1 GHz). The proposed amplifier is designed using the first-order quadratic mathematical model. The modeling includes the body effect and channel length modulation. The circuit has been fabricated using 0.18 $\mu \text{m}$ mixed-mode CMOS technology. Measurement results illustrate how the proposed Miller OpAmp reduces susceptibility to EMI even in the presence of high-amplitude interferences that are as high as 1 Vpp. Experimental results show that the maximum EMI-induced Output Offset Voltage for the proposed Miller OpAmp is less than 10 mV over a wide range of frequencies (10 MHz to 1 GHz) when a 900 mVpp EMI signal is injected into the noninverting input. In contrast, the classic Miller OpAmp generates a maximum Output Offset Voltage of 215 mV at 1 GHz under the same operating conditions. The measured results of the EMI-induced input Offset corroborates the circuit simulations. © 2017 IEEE

  • Increasing the EMI immunity of CMOS operational amplifiers using an on-chip common-mode cancellation circuit
    2014
    Co-Authors: Richelli A., Redouté Jean-michel
    Abstract:

    This paper presents an on-chip common-mode cancellation circuit which increases the common-mode rejection ratio (CMRR) in operational amplifiers, while at the same time increasing their immunity to electromagnetic interference (EMI). This common-mode cancellation circuit can be designed so as to double the differential gain while significantly reducing the common-mode gain. Simulations illustrate how the proposed amplifier exhibits an increased immunity to EMI injected in the opamp's inputs. A case study example shows that the maximum Output Offset Voltage which is obtained when an EMI amplitude of 1 Vpp is injected in the noninverting input of a Miller amplifier connected as a Voltage follower is equal to 50 mV and 200 mV with and without the common-mode cancellation structure respectively. Finally, simulations show that the common-mode deleting circuit is not overly sensitive to mismatch. © 2014 IEEE.Peer reviewe

D. Stiurca - One of the best experts on this subject based on the ideXlab platform.