The Experts below are selected from a list of 327 Experts worldwide ranked by ideXlab platform
Sima Dimitrijev - One of the best experts on this subject based on the ideXlab platform.
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Dependence of Offset Voltage in AlGaN/GaN van der Pauw devices under mechanical strain
Materials Letters, 2019Co-Authors: Hong-quan Nguyen, Tuan-khoa Nguyen, Hoang-phuong Phan, Toan Dinh, Sima Dimitrijev, Hamid Amini Moghadam, Nam-trung NguyenAbstract:Abstract This work reports the strain dependence of the Offset Voltage in an AlGaN/GaN van der Pauw device under mechanical strain. The AlGaN/GaN heterostructure was grown on a sapphire (0 0 0 1) wafer by using a metal organic chemical vapor deposition (MOCVD) process. Taking advantage of the four-terminal configuration, the fabricated van der Pauw device exhibited an excellent repeatability and linearity with a significant change of the Offset Voltage under application of tensile and compressive strains. In particular, the sensitivity of the device to the applied strain was found to be as large as 3 ( μ V/V)/ppm, indicating the feasibility of using this effect for mechanical sensing applications. The sensing mechanism of the device is explained via the alteration of the sheet carrier concentration at the AlGaN/GaN interface and the asymmetric current flux in the 2DEG van der Pauw device.
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the effect of device geometry and crystal orientation on the stress dependent Offset Voltage of 3c sic 100 four terminal devices
Journal of Materials Chemistry C, 2015Co-Authors: Afzaal Qamar, Hoang-phuong Phan, Toan Dinh, Philip Tanner, Li Wang, Sima DimitrijevAbstract:This communication reports for the first time, the impact of device geometry on the stress-dependent Offset Voltage of single crystal p-type 3C–SiC four terminal devices. Single crystal p-type 3C–SiC(100) was grown by low pressure chemical vapor deposition and three different device geometries (cross, rectangle and square) were fabricated using the conventional photolithography and dry etching processes. It was observed that the stress-dependent Offset Voltage of the devices strongly depends upon the device geometry and it can be increased by almost 100% by just selecting the appropriate device geometry. We also found that as the device is rotated within the (100) crystal plane its stress sensitivity varies from ≈0 to 9 × 10−11 Pa−1.
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The Dependence of Offset Voltage in p-Type 3C-SiC van der Pauw Device on Applied Strain
IEEE Electron Device Letters, 2015Co-Authors: Afzaal Qamar, Hoang-phuong Phan, Toan Dinh, Philip Tanner, Li Wang, Sima DimitrijevAbstract:This letter reports for the first time the strain dependence of the Offset Voltage in p-type 3C-SiC van der Pauw square device. The p-type 3C-SiC thin film was epitaxially grown on a p-type Si(100) wafer using low pressure chemical vapor deposition followed by a conventional photolithography and dry etch processes, forming four-terminal van der Pauw device. The influence of applied tensile and compressive strain on the Offset Voltage of the van der Pauw device was investigated using the bending beam method. Experimental results showed that the Offset Voltage of the device is significantly changed by applied compressive and tensile strain, indicating the feasibility of using this effect for mechanical sensing applications. The sensitivity of the device to the applied strain has been found to be 70 (mV/A)/ppm.
Hoang-phuong Phan - One of the best experts on this subject based on the ideXlab platform.
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Dependence of Offset Voltage in AlGaN/GaN van der Pauw devices under mechanical strain
Materials Letters, 2019Co-Authors: Hong-quan Nguyen, Tuan-khoa Nguyen, Hoang-phuong Phan, Toan Dinh, Sima Dimitrijev, Hamid Amini Moghadam, Nam-trung NguyenAbstract:Abstract This work reports the strain dependence of the Offset Voltage in an AlGaN/GaN van der Pauw device under mechanical strain. The AlGaN/GaN heterostructure was grown on a sapphire (0 0 0 1) wafer by using a metal organic chemical vapor deposition (MOCVD) process. Taking advantage of the four-terminal configuration, the fabricated van der Pauw device exhibited an excellent repeatability and linearity with a significant change of the Offset Voltage under application of tensile and compressive strains. In particular, the sensitivity of the device to the applied strain was found to be as large as 3 ( μ V/V)/ppm, indicating the feasibility of using this effect for mechanical sensing applications. The sensing mechanism of the device is explained via the alteration of the sheet carrier concentration at the AlGaN/GaN interface and the asymmetric current flux in the 2DEG van der Pauw device.
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Utilizing large hall Offset Voltage for conversion free 4H-SiC strain sensor
2018 IEEE Micro Electro Mechanical Systems (MEMS), 2018Co-Authors: Tuan-khoa Nguyen, Hoang-phuong Phan, Toan Dinh, Abu Riduan Mdfoisal, Nam-trung NguyenAbstract:This work presents a conversion free p-type 4H silicon carbide (4H-SiC) four-terminal strain sensor utilizing a large Hall Offset Voltage in a symmetric four-terminal configuration. Upon the application of mechanical strain, a high sensitivity of 209 mV/A/ppm was obtained. The strain sensor also exhibited good repeatability and linearity with a significantly large Offset Voltage in the induced strain ranging from 0 to 334ppm. Coupled these performances with the excellent mechanical strength, electrical conductivity, thermal stability, and chemical inertness of the SiC material, the proposed 4H-SiC strain sensor is promising for stress/strain monitoring for harsh operating environments with high signal-to-noise ratio.
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the effect of device geometry and crystal orientation on the stress dependent Offset Voltage of 3c sic 100 four terminal devices
Journal of Materials Chemistry C, 2015Co-Authors: Afzaal Qamar, Hoang-phuong Phan, Toan Dinh, Philip Tanner, Li Wang, Sima DimitrijevAbstract:This communication reports for the first time, the impact of device geometry on the stress-dependent Offset Voltage of single crystal p-type 3C–SiC four terminal devices. Single crystal p-type 3C–SiC(100) was grown by low pressure chemical vapor deposition and three different device geometries (cross, rectangle and square) were fabricated using the conventional photolithography and dry etching processes. It was observed that the stress-dependent Offset Voltage of the devices strongly depends upon the device geometry and it can be increased by almost 100% by just selecting the appropriate device geometry. We also found that as the device is rotated within the (100) crystal plane its stress sensitivity varies from ≈0 to 9 × 10−11 Pa−1.
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The Dependence of Offset Voltage in p-Type 3C-SiC van der Pauw Device on Applied Strain
IEEE Electron Device Letters, 2015Co-Authors: Afzaal Qamar, Hoang-phuong Phan, Toan Dinh, Philip Tanner, Li Wang, Sima DimitrijevAbstract:This letter reports for the first time the strain dependence of the Offset Voltage in p-type 3C-SiC van der Pauw square device. The p-type 3C-SiC thin film was epitaxially grown on a p-type Si(100) wafer using low pressure chemical vapor deposition followed by a conventional photolithography and dry etch processes, forming four-terminal van der Pauw device. The influence of applied tensile and compressive strain on the Offset Voltage of the van der Pauw device was investigated using the bending beam method. Experimental results showed that the Offset Voltage of the device is significantly changed by applied compressive and tensile strain, indicating the feasibility of using this effect for mechanical sensing applications. The sensitivity of the device to the applied strain has been found to be 70 (mV/A)/ppm.
Toan Dinh - One of the best experts on this subject based on the ideXlab platform.
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Dependence of Offset Voltage in AlGaN/GaN van der Pauw devices under mechanical strain
Materials Letters, 2019Co-Authors: Hong-quan Nguyen, Tuan-khoa Nguyen, Hoang-phuong Phan, Toan Dinh, Sima Dimitrijev, Hamid Amini Moghadam, Nam-trung NguyenAbstract:Abstract This work reports the strain dependence of the Offset Voltage in an AlGaN/GaN van der Pauw device under mechanical strain. The AlGaN/GaN heterostructure was grown on a sapphire (0 0 0 1) wafer by using a metal organic chemical vapor deposition (MOCVD) process. Taking advantage of the four-terminal configuration, the fabricated van der Pauw device exhibited an excellent repeatability and linearity with a significant change of the Offset Voltage under application of tensile and compressive strains. In particular, the sensitivity of the device to the applied strain was found to be as large as 3 ( μ V/V)/ppm, indicating the feasibility of using this effect for mechanical sensing applications. The sensing mechanism of the device is explained via the alteration of the sheet carrier concentration at the AlGaN/GaN interface and the asymmetric current flux in the 2DEG van der Pauw device.
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Utilizing large hall Offset Voltage for conversion free 4H-SiC strain sensor
2018 IEEE Micro Electro Mechanical Systems (MEMS), 2018Co-Authors: Tuan-khoa Nguyen, Hoang-phuong Phan, Toan Dinh, Abu Riduan Mdfoisal, Nam-trung NguyenAbstract:This work presents a conversion free p-type 4H silicon carbide (4H-SiC) four-terminal strain sensor utilizing a large Hall Offset Voltage in a symmetric four-terminal configuration. Upon the application of mechanical strain, a high sensitivity of 209 mV/A/ppm was obtained. The strain sensor also exhibited good repeatability and linearity with a significantly large Offset Voltage in the induced strain ranging from 0 to 334ppm. Coupled these performances with the excellent mechanical strength, electrical conductivity, thermal stability, and chemical inertness of the SiC material, the proposed 4H-SiC strain sensor is promising for stress/strain monitoring for harsh operating environments with high signal-to-noise ratio.
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the effect of device geometry and crystal orientation on the stress dependent Offset Voltage of 3c sic 100 four terminal devices
Journal of Materials Chemistry C, 2015Co-Authors: Afzaal Qamar, Hoang-phuong Phan, Toan Dinh, Philip Tanner, Li Wang, Sima DimitrijevAbstract:This communication reports for the first time, the impact of device geometry on the stress-dependent Offset Voltage of single crystal p-type 3C–SiC four terminal devices. Single crystal p-type 3C–SiC(100) was grown by low pressure chemical vapor deposition and three different device geometries (cross, rectangle and square) were fabricated using the conventional photolithography and dry etching processes. It was observed that the stress-dependent Offset Voltage of the devices strongly depends upon the device geometry and it can be increased by almost 100% by just selecting the appropriate device geometry. We also found that as the device is rotated within the (100) crystal plane its stress sensitivity varies from ≈0 to 9 × 10−11 Pa−1.
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The Dependence of Offset Voltage in p-Type 3C-SiC van der Pauw Device on Applied Strain
IEEE Electron Device Letters, 2015Co-Authors: Afzaal Qamar, Hoang-phuong Phan, Toan Dinh, Philip Tanner, Li Wang, Sima DimitrijevAbstract:This letter reports for the first time the strain dependence of the Offset Voltage in p-type 3C-SiC van der Pauw square device. The p-type 3C-SiC thin film was epitaxially grown on a p-type Si(100) wafer using low pressure chemical vapor deposition followed by a conventional photolithography and dry etch processes, forming four-terminal van der Pauw device. The influence of applied tensile and compressive strain on the Offset Voltage of the van der Pauw device was investigated using the bending beam method. Experimental results showed that the Offset Voltage of the device is significantly changed by applied compressive and tensile strain, indicating the feasibility of using this effect for mechanical sensing applications. The sensitivity of the device to the applied strain has been found to be 70 (mV/A)/ppm.
Afzaal Qamar - One of the best experts on this subject based on the ideXlab platform.
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the effect of device geometry and crystal orientation on the stress dependent Offset Voltage of 3c sic 100 four terminal devices
Journal of Materials Chemistry C, 2015Co-Authors: Afzaal Qamar, Hoang-phuong Phan, Toan Dinh, Philip Tanner, Li Wang, Sima DimitrijevAbstract:This communication reports for the first time, the impact of device geometry on the stress-dependent Offset Voltage of single crystal p-type 3C–SiC four terminal devices. Single crystal p-type 3C–SiC(100) was grown by low pressure chemical vapor deposition and three different device geometries (cross, rectangle and square) were fabricated using the conventional photolithography and dry etching processes. It was observed that the stress-dependent Offset Voltage of the devices strongly depends upon the device geometry and it can be increased by almost 100% by just selecting the appropriate device geometry. We also found that as the device is rotated within the (100) crystal plane its stress sensitivity varies from ≈0 to 9 × 10−11 Pa−1.
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The Dependence of Offset Voltage in p-Type 3C-SiC van der Pauw Device on Applied Strain
IEEE Electron Device Letters, 2015Co-Authors: Afzaal Qamar, Hoang-phuong Phan, Toan Dinh, Philip Tanner, Li Wang, Sima DimitrijevAbstract:This letter reports for the first time the strain dependence of the Offset Voltage in p-type 3C-SiC van der Pauw square device. The p-type 3C-SiC thin film was epitaxially grown on a p-type Si(100) wafer using low pressure chemical vapor deposition followed by a conventional photolithography and dry etch processes, forming four-terminal van der Pauw device. The influence of applied tensile and compressive strain on the Offset Voltage of the van der Pauw device was investigated using the bending beam method. Experimental results showed that the Offset Voltage of the device is significantly changed by applied compressive and tensile strain, indicating the feasibility of using this effect for mechanical sensing applications. The sensitivity of the device to the applied strain has been found to be 70 (mV/A)/ppm.
Li Wang - One of the best experts on this subject based on the ideXlab platform.
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the effect of device geometry and crystal orientation on the stress dependent Offset Voltage of 3c sic 100 four terminal devices
Journal of Materials Chemistry C, 2015Co-Authors: Afzaal Qamar, Hoang-phuong Phan, Toan Dinh, Philip Tanner, Li Wang, Sima DimitrijevAbstract:This communication reports for the first time, the impact of device geometry on the stress-dependent Offset Voltage of single crystal p-type 3C–SiC four terminal devices. Single crystal p-type 3C–SiC(100) was grown by low pressure chemical vapor deposition and three different device geometries (cross, rectangle and square) were fabricated using the conventional photolithography and dry etching processes. It was observed that the stress-dependent Offset Voltage of the devices strongly depends upon the device geometry and it can be increased by almost 100% by just selecting the appropriate device geometry. We also found that as the device is rotated within the (100) crystal plane its stress sensitivity varies from ≈0 to 9 × 10−11 Pa−1.
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The Dependence of Offset Voltage in p-Type 3C-SiC van der Pauw Device on Applied Strain
IEEE Electron Device Letters, 2015Co-Authors: Afzaal Qamar, Hoang-phuong Phan, Toan Dinh, Philip Tanner, Li Wang, Sima DimitrijevAbstract:This letter reports for the first time the strain dependence of the Offset Voltage in p-type 3C-SiC van der Pauw square device. The p-type 3C-SiC thin film was epitaxially grown on a p-type Si(100) wafer using low pressure chemical vapor deposition followed by a conventional photolithography and dry etch processes, forming four-terminal van der Pauw device. The influence of applied tensile and compressive strain on the Offset Voltage of the van der Pauw device was investigated using the bending beam method. Experimental results showed that the Offset Voltage of the device is significantly changed by applied compressive and tensile strain, indicating the feasibility of using this effect for mechanical sensing applications. The sensitivity of the device to the applied strain has been found to be 70 (mV/A)/ppm.
