The Experts below are selected from a list of 318 Experts worldwide ranked by ideXlab platform
Alex Q. Huang - One of the best experts on this subject based on the ideXlab platform.
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experimental study of 650v algan gan hemt short circuit safe Operating Area scsoa
International Symposium on Power Semiconductor Devices and IC's, 2014Co-Authors: Xing Huang, Alex Q. Huang, Dong Young Lee, Volodymyr Bondarenko, Art Baker, David C. Sheridan, Jayant B BaligaAbstract:The short-circuit reliability of power switches plays very important part in many applications, where a 10μs short-circuit duration at 400V is usually required for 650V switches. Although emerging high voltage AlGaN/GaN HEMT technologies have shown switching advantages, the short-circuit performance has not been thoroughly investigated. In this work, we present an experimental study and numerical simulation analysis of 650V AlGaN/GaN HEMTs short-circuit safe-Operating-Area (SCSOA), and provide a theory for the reduction in ruggedness at high voltage short circuit conditions.
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Experimental study of 650V AlGaN/GaN HEMT short-circuit safe Operating Area (SCSOA)
2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD), 2014Co-Authors: Xing Huang, Alex Q. Huang, Dong Young Lee, Volodymyr Bondarenko, Art Baker, David C. Sheridan, B. Jayant BaligaAbstract:The short-circuit reliability of power switches plays very important part in many applications, where a 10μs short-circuit duration at 400V is usually required for 650V switches. Although emerging high voltage AlGaN/GaN HEMT technologies have shown switching advantages, the short-circuit performance has not been thoroughly investigated. In this work, we present an experimental study and numerical simulation analysis of 650V AlGaN/GaN HEMTs short-circuit safe-Operating-Area (SCSOA), and provide a theory for the reduction in ruggedness at high voltage short circuit conditions.
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theoretical and experimental analyses of safe Operating Area soa of 1200 v 4h sic bjt
IEEE Transactions on Electron Devices, 2008Co-Authors: Yan Gao, Alex Q. Huang, Anant K Agarwal, Qingchun ZhangAbstract:The safe Operating Area (SOA) of 1200-V SiC bipolar junction transistor (BJT) is investigated by experiments and simulations. The SiC BJT is free of the second breakdown even under the turn-off power density of 3.7 MW/cm2. The theoretical boundary of reverse-biased SOA caused by the false turn-on is obtained by simulations. The short-circuit capability of the 1200-V SiC BJT is also investigated theoretically and experimentally. Self-heating is considered by the nonisothermal simulation, and 1800-K maximum local temperature is the simulated critical temperature of device failure. The surface condition is very critical for short-circuit capability. From simulations, when the interface trap density increases, the critical temperature decreases. This is believed to be the reason why the experimental results show much shorter short-circuit withstand time than the simulation showed.
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Analysis of the forward biased safe Operating Area of the super junction MOSFET
12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094), 2000Co-Authors: Bo Zhang, Alex Q. HuangAbstract:In this paper, the forward biased safe Operating Area (FBSOA) of the super junction MOSPET (also called CoolMOS) is studied. The FBSOA of a 600-V CoolMOS transistor-SPP20N60S5 is experimentally obtained. The FBSOA characteristic and the FBSOA failure mechanisms are analyzed in detail with the help of numerical simulations. The impact of the charge imbalance on the FBSOA is also studied in this work.
Jayant B Baliga - One of the best experts on this subject based on the ideXlab platform.
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experimental study of 650v algan gan hemt short circuit safe Operating Area scsoa
International Symposium on Power Semiconductor Devices and IC's, 2014Co-Authors: Xing Huang, Alex Q. Huang, Dong Young Lee, Volodymyr Bondarenko, Art Baker, David C. Sheridan, Jayant B BaligaAbstract:The short-circuit reliability of power switches plays very important part in many applications, where a 10μs short-circuit duration at 400V is usually required for 650V switches. Although emerging high voltage AlGaN/GaN HEMT technologies have shown switching advantages, the short-circuit performance has not been thoroughly investigated. In this work, we present an experimental study and numerical simulation analysis of 650V AlGaN/GaN HEMTs short-circuit safe-Operating-Area (SCSOA), and provide a theory for the reduction in ruggedness at high voltage short circuit conditions.
B. Jayant Baliga - One of the best experts on this subject based on the ideXlab platform.
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Safe Operating Area Design
The IGBT Device, 2015Co-Authors: B. Jayant BaligaAbstract:The ruggedness of the insulated gate bipolar transistor (IGBT) is one of its important attributes from the application stand point. Models for the forward-, reverse-, and short circuit safe Operating Area are provided in this chapter. Latchup of the parasitic thyristor in the IGBT can lead to destructive failure. Cell design for suppressing the latchup of the parasitic thyristor in the IGBT is described including adding a deep P-region, reducing the gate oxide thickness, adding a diverter region, and improving the polysilicon gate layout topology. The performance of silicon carbide devices is contrasted with that of silicon devices.
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Experimental study of 650V AlGaN/GaN HEMT short-circuit safe Operating Area (SCSOA)
2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD), 2014Co-Authors: Xing Huang, Alex Q. Huang, Dong Young Lee, Volodymyr Bondarenko, Art Baker, David C. Sheridan, B. Jayant BaligaAbstract:The short-circuit reliability of power switches plays very important part in many applications, where a 10μs short-circuit duration at 400V is usually required for 650V switches. Although emerging high voltage AlGaN/GaN HEMT technologies have shown switching advantages, the short-circuit performance has not been thoroughly investigated. In this work, we present an experimental study and numerical simulation analysis of 650V AlGaN/GaN HEMTs short-circuit safe-Operating-Area (SCSOA), and provide a theory for the reduction in ruggedness at high voltage short circuit conditions.
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Forward biased safe Operating Area of emitter switched thyristors
IEEE Transactions on Electron Devices, 1995Co-Authors: Noriyuki Iwamuro, M.s. Shekar, B. Jayant BaligaAbstract:The physical mechanisms for current saturation and destructive failure of the dual channel emitter switched thyristor (EST) are described. Forward Biased Safe Operating Areas (FBSOAs) at short-circuit state of the 600 V and 2500 V dual channel ESTs are reported. It is demonstrated by numerical simulation that the EST offers a better FBSOA than the IGBT. Experimental measurements are reported that corroborate these calculated results. >
Xing Huang - One of the best experts on this subject based on the ideXlab platform.
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Experimental study of 650V AlGaN/GaN HEMT short-circuit safe Operating Area (SCSOA)
2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD), 2014Co-Authors: Xing Huang, Alex Q. Huang, Dong Young Lee, Volodymyr Bondarenko, Art Baker, David C. Sheridan, B. Jayant BaligaAbstract:The short-circuit reliability of power switches plays very important part in many applications, where a 10μs short-circuit duration at 400V is usually required for 650V switches. Although emerging high voltage AlGaN/GaN HEMT technologies have shown switching advantages, the short-circuit performance has not been thoroughly investigated. In this work, we present an experimental study and numerical simulation analysis of 650V AlGaN/GaN HEMTs short-circuit safe-Operating-Area (SCSOA), and provide a theory for the reduction in ruggedness at high voltage short circuit conditions.
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experimental study of 650v algan gan hemt short circuit safe Operating Area scsoa
International Symposium on Power Semiconductor Devices and IC's, 2014Co-Authors: Xing Huang, Alex Q. Huang, Dong Young Lee, Volodymyr Bondarenko, Art Baker, David C. Sheridan, Jayant B BaligaAbstract:The short-circuit reliability of power switches plays very important part in many applications, where a 10μs short-circuit duration at 400V is usually required for 650V switches. Although emerging high voltage AlGaN/GaN HEMT technologies have shown switching advantages, the short-circuit performance has not been thoroughly investigated. In this work, we present an experimental study and numerical simulation analysis of 650V AlGaN/GaN HEMTs short-circuit safe-Operating-Area (SCSOA), and provide a theory for the reduction in ruggedness at high voltage short circuit conditions.
Qingchun Zhang - One of the best experts on this subject based on the ideXlab platform.
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theoretical and experimental analyses of safe Operating Area soa of 1200 v 4h sic bjt
IEEE Transactions on Electron Devices, 2008Co-Authors: Yan Gao, Alex Q. Huang, Anant K Agarwal, Qingchun ZhangAbstract:The safe Operating Area (SOA) of 1200-V SiC bipolar junction transistor (BJT) is investigated by experiments and simulations. The SiC BJT is free of the second breakdown even under the turn-off power density of 3.7 MW/cm2. The theoretical boundary of reverse-biased SOA caused by the false turn-on is obtained by simulations. The short-circuit capability of the 1200-V SiC BJT is also investigated theoretically and experimentally. Self-heating is considered by the nonisothermal simulation, and 1800-K maximum local temperature is the simulated critical temperature of device failure. The surface condition is very critical for short-circuit capability. From simulations, when the interface trap density increases, the critical temperature decreases. This is believed to be the reason why the experimental results show much shorter short-circuit withstand time than the simulation showed.