The Experts below are selected from a list of 35658 Experts worldwide ranked by ideXlab platform
Tobin J Marks - One of the best experts on this subject based on the ideXlab platform.
-
probing the surface glass transition temperature of polymer films via Organic Semiconductor growth mode microstructure and thin film transistor response
Journal of the American Chemical Society, 2009Co-Authors: Antonio Facchetti, Tobin J MarksAbstract:Organic Semiconductor-based thin-film transistors (TFTs) have been extensively studied for Organic electronics. In this study, we report on the influence of the polymer gate dielectric viscoelastic properties on overlying Organic Semiconductor film growth, film microstructure, and TFT response. From the knowledge that nanoscopically-confined thin polymer films exhibit glass-transition temperatures that deviate substantially from those of the corresponding bulk materials, we show here that pentacene (p-channel) and cyanoperylene (n-channel) films grown on polymeric gate dielectrics at temperatures well-below their bulk glass transition temperatures [Tg(b)] exhibit morphological/microstructural transitions and dramatic OTFT performance discontinuities at well-defined temperatures [associated with a polymer “surface glass transition temperature,” or Tg(s)]. These transitions are characteristic of the particular polymer architecture and independent of film thickness or overall film cooperative chain dynamics....
-
probing the surface glass transition temperature of polymer films via Organic Semiconductor growth mode microstructure and thin film transistor response
Journal of the American Chemical Society, 2009Co-Authors: Choongik Kim, Antonio Facchetti, Tobin J MarksAbstract:Organic Semiconductor-based thin-film transistors (TFTs) have been extensively studied for Organic electronics. In this study, we report on the influence of the polymer gate dielectric viscoelastic properties on overlying Organic Semiconductor film growth, film microstructure, and TFT response. From the knowledge that nanoscopically-confined thin polymer films exhibit glass-transition temperatures that deviate substantially from those of the corresponding bulk materials, we show here that pentacene (p-channel) and cyanoperylene (n-channel) films grown on polymeric gate dielectrics at temperatures well-below their bulk glass transition temperatures [T(g)(b)] exhibit morphological/microstructural transitions and dramatic OTFT performance discontinuities at well-defined temperatures [associated with a polymer "surface glass transition temperature," or T(g)(s)]. These transitions are characteristic of the particular polymer architecture and independent of film thickness or overall film cooperative chain dynamics. Our results demonstrate that TFT measurements represent a new and sensitive methodology to probe polymer surface viscoelastic properties.
Antonio Facchetti - One of the best experts on this subject based on the ideXlab platform.
-
probing the surface glass transition temperature of polymer films via Organic Semiconductor growth mode microstructure and thin film transistor response
Journal of the American Chemical Society, 2009Co-Authors: Antonio Facchetti, Tobin J MarksAbstract:Organic Semiconductor-based thin-film transistors (TFTs) have been extensively studied for Organic electronics. In this study, we report on the influence of the polymer gate dielectric viscoelastic properties on overlying Organic Semiconductor film growth, film microstructure, and TFT response. From the knowledge that nanoscopically-confined thin polymer films exhibit glass-transition temperatures that deviate substantially from those of the corresponding bulk materials, we show here that pentacene (p-channel) and cyanoperylene (n-channel) films grown on polymeric gate dielectrics at temperatures well-below their bulk glass transition temperatures [Tg(b)] exhibit morphological/microstructural transitions and dramatic OTFT performance discontinuities at well-defined temperatures [associated with a polymer “surface glass transition temperature,” or Tg(s)]. These transitions are characteristic of the particular polymer architecture and independent of film thickness or overall film cooperative chain dynamics....
-
probing the surface glass transition temperature of polymer films via Organic Semiconductor growth mode microstructure and thin film transistor response
Journal of the American Chemical Society, 2009Co-Authors: Choongik Kim, Antonio Facchetti, Tobin J MarksAbstract:Organic Semiconductor-based thin-film transistors (TFTs) have been extensively studied for Organic electronics. In this study, we report on the influence of the polymer gate dielectric viscoelastic properties on overlying Organic Semiconductor film growth, film microstructure, and TFT response. From the knowledge that nanoscopically-confined thin polymer films exhibit glass-transition temperatures that deviate substantially from those of the corresponding bulk materials, we show here that pentacene (p-channel) and cyanoperylene (n-channel) films grown on polymeric gate dielectrics at temperatures well-below their bulk glass transition temperatures [T(g)(b)] exhibit morphological/microstructural transitions and dramatic OTFT performance discontinuities at well-defined temperatures [associated with a polymer "surface glass transition temperature," or T(g)(s)]. These transitions are characteristic of the particular polymer architecture and independent of film thickness or overall film cooperative chain dynamics. Our results demonstrate that TFT measurements represent a new and sensitive methodology to probe polymer surface viscoelastic properties.
Donghang Yan - One of the best experts on this subject based on the ideXlab platform.
-
weak epitaxy growth of Organic Semiconductor thin films
Chemical Society Reviews, 2009Co-Authors: Junliang Yang, Donghang YanAbstract:The fabrication of Organic Semiconductor thin films is extremely important in Organic electronic devices. This tutorial review—which should particularly appeal to chemists and physicists interested in Organic thin-film growth, Organic electronic devices and Organic Semiconductor materials—summarizes the method of weak epitaxy growth (WEG) and its application in the fabrication of high quality Organic Semiconductor thin films. WEG achieves the thin-film fabrication of disk-like Organic Semiconductor molecules with highly structural order, molecular level smoothness and large size domains on amorphous substrate. The Organic field-effect transistor devices based on these thin films exhibit a high charge mobility that is comparable with their corresponding single-crystal devices. Moreover, it provides a way to produce Organic superlattices.
-
Introduction to Organic Semiconductor Heterojunctions - Weak epitaxy growth of Organic Semiconductor thin films
Chemical Society reviews, 2009Co-Authors: Junliang Yang, Donghang YanAbstract:The fabrication of Organic Semiconductor thin films is extremely important in Organic electronic devices. This tutorial review—which should particularly appeal to chemists and physicists interested in Organic thin-film growth, Organic electronic devices and Organic Semiconductor materials—summarizes the method of weak epitaxy growth (WEG) and its application in the fabrication of high quality Organic Semiconductor thin films. WEG achieves the thin-film fabrication of disk-like Organic Semiconductor molecules with highly structural order, molecular level smoothness and large size domains on amorphous substrate. The Organic field-effect transistor devices based on these thin films exhibit a high charge mobility that is comparable with their corresponding single-crystal devices. Moreover, it provides a way to produce Organic superlattices.
J S Moodera - One of the best experts on this subject based on the ideXlab platform.
-
large spin diffusion length in an amorphous Organic Semiconductor
Physical Review Letters, 2008Co-Authors: J H Shim, Biswarup Satpati, Karthik V Raman, Y J Park, Tiffany S Santos, Guoxing Miao, J S MooderaAbstract:We directly measured a spin diffusion length (� s) of 13.3 nm in amorphous Organic Semiconductor (OS) rubrene (C42H28) by spin polarized tunneling. In comparison, no spin-conserved transport has been reported in amorphous Si or Ge. Absence of dangling bond defects can explain the spin transport behavior in amorphous OS. Furthermore, when rubrene barriers were grown on a seed layer, the elastic tunneling characteristics were greatly enhanced. Based on our findings, � s in single-crystalline rubrene can be expected to reach even millimeters, showing the potential for Organic spintronics development.
-
room temperature tunnel magnetoresistance and spin polarized tunneling through an Organic Semiconductor barrier
Physical Review Letters, 2007Co-Authors: T S Santos, Piotr Migdal, I C Lekshmi, Biswarup Satpati, J S MooderaAbstract:: Electron spin-polarized tunneling is observed through an ultrathin layer of the molecular Organic Semiconductor tris(8-hydroxyquinolinato)aluminum (Alq3). Significant tunnel magnetoresistance (TMR) was measured in a Co/Al2O3/Alq3/NiFe magnetic tunnel junction at room temperature, which increased when cooled to low temperatures. Tunneling characteristics, such as the current-voltage behavior and temperature and bias dependence of the TMR, show the good quality of the Organic tunnel barrier. Spin polarization (P) of the tunnel current through the Alq3 layer, directly measured using superconducting Al as the spin detector, shows that minimizing formation of an interfacial dipole layer between the metal electrode and Organic barrier significantly improves spin transport.
Choongik Kim - One of the best experts on this subject based on the ideXlab platform.
-
probing the surface glass transition temperature of polymer films via Organic Semiconductor growth mode microstructure and thin film transistor response
Journal of the American Chemical Society, 2009Co-Authors: Choongik Kim, Antonio Facchetti, Tobin J MarksAbstract:Organic Semiconductor-based thin-film transistors (TFTs) have been extensively studied for Organic electronics. In this study, we report on the influence of the polymer gate dielectric viscoelastic properties on overlying Organic Semiconductor film growth, film microstructure, and TFT response. From the knowledge that nanoscopically-confined thin polymer films exhibit glass-transition temperatures that deviate substantially from those of the corresponding bulk materials, we show here that pentacene (p-channel) and cyanoperylene (n-channel) films grown on polymeric gate dielectrics at temperatures well-below their bulk glass transition temperatures [T(g)(b)] exhibit morphological/microstructural transitions and dramatic OTFT performance discontinuities at well-defined temperatures [associated with a polymer "surface glass transition temperature," or T(g)(s)]. These transitions are characteristic of the particular polymer architecture and independent of film thickness or overall film cooperative chain dynamics. Our results demonstrate that TFT measurements represent a new and sensitive methodology to probe polymer surface viscoelastic properties.